H04N 25/771
Definition
Diese Klassifikationsstelle umfasst:(Für diese Definition ist die deutsche Übersetzung noch nicht abgeschlossen)
Addressed sensors with pixel circuits comprising additional storage means, i.e. storage means other than the floating diffusion.
The storage means can be analogue storage means:
- in the charge domain;
- in the voltage domain, i.e. after the source follower.
- The storage means can be digital memories or non-volatile memories.
The storage means are used for different purposes. For example:
- for storing reset and exposure signals for performing CDS;
- for storing several exposure periods;
- for performing high frame rate imaging;
- for performing HDR imaging;
- for storing overflow charges during the exposure period;
- for storing non-destructive readout signals during the exposure period.
Beziehungen zu anderen Klassifikationsstellen
This group is not used for memories provided in the AD converters. Such pixels are classified in group H04N 25/772.
Querverweise
Informative Querverweise
| Extending the dynamic range of solid state image sensors (SSIS) by controlling the amount of charge storable in the pixel | H04N 25/59 |
| Noise processing involving correlated double sampling (CDS) performed in the pixel | H04N 25/616 |
| CDS performed in readout circuits for addressed sensors | H04N 25/78 |
H04N 25/771
Definition Statement
This place covers:Addressed sensors with pixel circuits comprising additional storage means, i.e. storage means other than the floating diffusion.
The storage means can be analogue storage means:
- in the charge domain;
- in the voltage domain, i.e. after the source follower.
- The storage means can be digital memories or non-volatile memories.
The storage means are used for different purposes. For example:
- for storing reset and exposure signals for performing CDS;
- for storing several exposure periods;
- for performing high frame rate imaging;
- for performing HDR imaging;
- for storing overflow charges during the exposure period;
- for storing non-destructive readout signals during the exposure period.
Relationships with other classification places
This group is not used for memories provided in the AD converters. Such pixels are classified in group H04N 25/772.
References
Informative references
| Extending the dynamic range of solid state image sensors (SSIS) by controlling the amount of charge storable in the pixel | H04N 25/59 |
| Noise processing involving correlated double sampling (CDS) performed in the pixel | H04N 25/616 |
| CDS performed in readout circuits for addressed sensors | H04N 25/78 |