H04N 25/76

Definition

Diese Klassifikationsstelle umfasst:

(Für diese Definition ist die deutsche Übersetzung noch nicht abgeschlossen)

Circuits of and for driving, controlling addressed sensors.

There is a wide variety of addressed image sensors using different ways of transforming light to electrical current or voltage. The following aspects are classified in this group.

Active pixels sensors (APS):

Passive pixel sensors:

Bolometers used for far infrared imaging.

This group also covers addressed image sensors:

Querverweise

Nichteinschränkende Querverweise aus einer Reststelle

Detection or reduction of inverted contrast or eclipsing effects
H04N 25/627
Detection or reduction of noise due to excess charges produced by the exposure for reducing horizontal stripes caused by saturated regions of CMOS sensors
H04N 25/628

Informative Querverweise

Semiconductor technology of imager structures other than CCD as e. g. CMOS
H01L 27/146
Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
H04N 25/71

H04N 25/76

Definition Statement

This place covers:

Circuits of and for driving, controlling addressed sensors.

There is a wide variety of addressed image sensors using different ways of transforming light to electrical current or voltage. The following aspects are classified in this group.

Active pixels sensors (APS):

Passive pixel sensors:

Bolometers used for far infrared imaging.

This group also covers addressed image sensors:

References

References out of a residual place

Detection or reduction of inverted contrast or eclipsing effects
H04N 25/627
Detection or reduction of noise due to excess charges produced by the exposure for reducing horizontal stripes caused by saturated regions of CMOS sensors
H04N 25/628

Informative references

Semiconductor technology of imager structures other than CCD as e. g. CMOS
H01L 27/146
Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
H04N 25/71