H04N 25/76
Definition
Diese Klassifikationsstelle umfasst:(Für diese Definition ist die deutsche Übersetzung noch nicht abgeschlossen)
Circuits of and for driving, controlling addressed sensors.
There is a wide variety of addressed image sensors using different ways of transforming light to electrical current or voltage. The following aspects are classified in this group.
Active pixels sensors (APS):
- using photodiodes or two terminal semiconductor elements as photodetector;
- using Graphene Layer as photodetector;
- using Photo-conversion layer as photodetector;
- having pixels with small full-well capacity (200e-), high conversion gain (1 mV/e-), small pixel size (900 nm), e.g. QIS or binary pixels.
Passive pixel sensors:
- using photodiodes or two terminal semiconductor elements as photodetector;
- using bipolar transistors as photodetector;
- using charge injection devices (CID);
- charge modulation, static induction transistor (SIT) or base-stored image sensor BASIS;
- using CMOS-CCD structures;
- using diodes for (row) selection switches.
Bolometers used for far infrared imaging.
This group also covers addressed image sensors:
- comprising an additional frame memory;
- comprising testing structures;
- implemented within a display panel;
- providing specific details of the sensor input/output interfaces;
- providing details of partitioning of the signal processing circuits between the sensor and another chip;
- being a camera on chip.
Querverweise
Nichteinschränkende Querverweise aus einer Reststelle
Detection or reduction of inverted contrast or eclipsing effects
| H04N 25/627 |
Detection or reduction of noise due to excess charges produced by the exposure for reducing horizontal stripes caused by saturated regions of CMOS sensors
| H04N 25/628 |
Informative Querverweise
Semiconductor technology of imager structures other than CCD as e. g. CMOS
| H01L 27/146 |
Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
| H04N 25/71 |
H04N 25/76
Definition Statement
This place covers:Circuits of and for driving, controlling addressed sensors.
There is a wide variety of addressed image sensors using different ways of transforming light to electrical current or voltage. The following aspects are classified in this group.
Active pixels sensors (APS):
- using photodiodes or two terminal semiconductor elements as photodetector;
- using Graphene Layer as photodetector;
- using Photo-conversion layer as photodetector;
- having pixels with small full-well capacity (200e-), high conversion gain (1 mV/e-), small pixel size (900 nm), e.g. QIS or binary pixels.
Passive pixel sensors:
- using photodiodes or two terminal semiconductor elements as photodetector;
- using bipolar transistors as photodetector;
- using charge injection devices (CID);
- charge modulation, static induction transistor (SIT) or base-stored image sensor BASIS;
- using CMOS-CCD structures;
- using diodes for (row) selection switches.
Bolometers used for far infrared imaging.
This group also covers addressed image sensors:
- comprising an additional frame memory;
- comprising testing structures;
- implemented within a display panel;
- providing specific details of the sensor input/output interfaces;
- providing details of partitioning of the signal processing circuits between the sensor and another chip;
- being a camera on chip.
References
References out of a residual place
Detection or reduction of inverted contrast or eclipsing effects
| H04N 25/627 |
Detection or reduction of noise due to excess charges produced by the exposure for reducing horizontal stripes caused by saturated regions of CMOS sensors
| H04N 25/628 |
Informative references
Semiconductor technology of imager structures other than CCD as e. g. CMOS
| H01L 27/146 |
Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
| H04N 25/71 |