H04N 25/00
Definition
Diese Klassifikationsstelle umfasst:(Für diese Definition ist die deutsche Übersetzung noch nicht abgeschlossen)
Circuitry and driving details of solid-state image sensors, in particular the circuitry and driving details of image sensors directed to the following purposes and functions:
- Reading out image data from the image sensor;
- Performing image processing within the image sensor;
- Control of exposure time by an electronic shutter;
- Noise removal;
- Improvement of resolution;
- Extension of dynamic ranges.
Solid-state image sensors encompass charge-coupled devices (CCDs), charge injection devices (CIDs), addressable photodiode arrays, complementary metal oxide semiconductor (CMOS) image sensors, etc.
Solid-state image sensors normally capture and output image data as raw images. However, there are special image sensors that capture, process and output the image data. Details of such sensors are classified in the main group H04N 25/00, for example:
- image sensors having on-chip compression means for data rate reduction purposes, e.g. DCT, wavelet transformation in the sensor;
- image sensors having on-chip compression means for data rate reduction purposes by outputting differential data, such as the difference between two exposures or events detecting a predetermined change of the image signal or differences between neighbouring pixels;
- compressive sensing sensors
- image sensors performing global operations such as generation of histograms, sorting, region segmentation/labelling, convolution functions, character recognition, or detecting maximum/minimum level;
- image sensors with edge detection in the sensor, for detecting differences between pixel signals in the spatial domain, for spatial filtering;
- image sensors with motion or event detection in the sensor, i.e. detecting change between pixel signals over time;
- image sensors comprising a dedicated temperature sensor or being controlled by the sensor temperature.
- SSIS with power optimisation
- SSIS with processing time optimisation by using for example parallel processing circuitry
Beziehungen zu anderen Klassifikationsstellen
While main group H04N 25/00 is, inter alia, used for classifying electronic circuits of solid state image sensors and their driving, control and readout, the groups in main group H01L 27/00 cover details related to the implementation of the electronic circuits on a semiconductor chip.
Querverweise
Informative Querverweise
| Receivers for pulse based Lidars | G01S 7/486 |
| Receivers for non-pulse based Lidars | G01S 7/4912 |
| Computer systems using neural network models | G06N 3/02 |
| General purpose image data processing | G06T 1/00 |
| Arrangements for image or video recognition | G06V 10/00 |
| Imager structures consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate | H01L 27/146 |
| Charged coupled imagers | H01L 27/148 |
| Compressive sampling or sensing | H03M 7/30 |
| Details of scanning heads | H04N 1/024 |
| Scanning arrangements | H04N 1/04 |
| Organic image sensors | H10K 39/32 |
Spezielle Klassifizierungsregeln
Where the solid state image sensor function is classified in groups H04N 25/00-H04N 25/683, classification should also be made in the group corresponding to the sensor technology, i.e. H04N 25/71, H04N 25/76 or H04N 25/79. For example, dark current correction for CCDs should be classified in both H04N 25/63 and H04N 25/71.
Glossar
Synonyme und Stichwörter
Abkürzungen
H04N 25/00
Definition Statement
This place covers:Circuitry and driving details of solid-state image sensors, in particular the circuitry and driving details of image sensors directed to the following purposes and functions:
- Reading out image data from the image sensor;
- Performing image processing within the image sensor;
- Control of exposure time by an electronic shutter;
- Noise removal;
- Improvement of resolution;
- Extension of dynamic ranges.
Solid-state image sensors encompass charge-coupled devices (CCDs), charge injection devices (CIDs), addressable photodiode arrays, complementary metal oxide semiconductor (CMOS) image sensors, etc.
Solid-state image sensors normally capture and output image data as raw images. However, there are special image sensors that capture, process and output the image data. Details of such sensors are classified in the main group H04N 25/00, for example:
- image sensors having on-chip compression means for data rate reduction purposes, e.g. DCT, wavelet transformation in the sensor;
- image sensors having on-chip compression means for data rate reduction purposes by outputting differential data, such as the difference between two exposures or events detecting a predetermined change of the image signal or differences between neighbouring pixels;
- compressive sensing sensors
- image sensors performing global operations such as generation of histograms, sorting, region segmentation/labelling, convolution functions, character recognition, or detecting maximum/minimum level;
- image sensors with edge detection in the sensor, for detecting differences between pixel signals in the spatial domain, for spatial filtering;
- image sensors with motion or event detection in the sensor, i.e. detecting change between pixel signals over time;
- image sensors comprising a dedicated temperature sensor or being controlled by the sensor temperature.
- SSIS with power optimisation
- SSIS with processing time optimisation by using for example parallel processing circuitry
Relationships with other classification places
While main group H04N 25/00 is, inter alia, used for classifying electronic circuits of solid state image sensors and their driving, control and readout, the groups in main group H01L 27/00 cover details related to the implementation of the electronic circuits on a semiconductor chip.
References
Informative references
| Receivers for pulse based Lidars | G01S 7/486 |
| Receivers for non-pulse based Lidars | G01S 7/4912 |
| Computer systems using neural network models | G06N 3/02 |
| General purpose image data processing | G06T 1/00 |
| Arrangements for image or video recognition | G06V 10/00 |
| Imager structures consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate | H01L 27/146 |
| Charged coupled imagers | H01L 27/148 |
| Compressive sampling or sensing | H03M 7/30 |
| Details of scanning heads | H04N 1/024 |
| Scanning arrangements | H04N 1/04 |
| Organic image sensors | H10K 39/32 |
Special rules of classification
Where the solid state image sensor function is classified in groups H04N 25/00-H04N 25/683, classification should also be made in the group corresponding to the sensor technology, i.e. H04N 25/71, H04N 25/76 or H04N 25/79. For example, dark current correction for CCDs should be classified in both H04N 25/63 and H04N 25/71.