H | SK | SECTION H — ELECTRICITY |
H03 | KL | BASIC ELECTRONIC CIRCUITRY |
H03B | UKL | GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS (measuring, testing G01R; generators adapted for electrophonic musical instruments G10H; speech synthesis G10L 13/00; masers, lasers H01S; dynamo-electric machines H02K; power inverter circuits H02M; by using pulse techniques H03K; automatic control of generators H03L; starting, synchronisation or stabilisation of generators where the type of generator is irrelevant or unspecified H03L; generation of oscillations in plasma H05H) |
H03B 1/00 | HGR | Details |
H03B 1/02 | UGR1 | . | Structural details of power oscillators, e.g. for heating |
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H03B 1/04 | UGR1 | . | Reducing undesired oscillations, e.g. harmonics |
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H03B 5/00 | HGR | Generation of oscillations using amplifier with regenerative feedback from output to input (H03B 9/00, H03B 15/00 take precedence) |
H03B 5/02 | UGR1 | |
H03B 5/04 | UGR2 | . . | Modifications of generator to compensate for variations in physical values, e.g. power supply, load, temperature |
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H03B 5/06 | UGR2 | . . | Modifications of generator to ensure starting of oscillations |
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H03B 5/08 | UGR1 | . | with frequency-determining element comprising lumped inductance and capacitance |
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H03B 5/10 | UGR2 | . . | active element in amplifier being vacuum tube (H03B 5/14 takes precedence) |
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H03B 5/12 | UGR2 | . . | active element in amplifier being semiconductor device (H03B 5/14 takes precedence) |
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H03B 5/14 | UGR2 | . . | frequency-determining element connected via bridge circuit to closed ring around which signal is transmitted |
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H03B 5/16 | UGR3 | . . . | active element in amplifier being vacuum tube |
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H03B 5/18 | UGR1 | . | with frequency-determining element comprising distributed inductance and capacitance |
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H03B 5/20 | UGR1 | . | with frequency-determining element comprising resistance and either capacitance or inductance, e.g. phase-shift oscillator |
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H03B 5/22 | UGR2 | . . | active element in amplifier being vacuum tube (H03B 5/26 takes precedence) |
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H03B 5/24 | UGR2 | . . | active element in amplifier being semiconductor device (H03B 5/26 takes precedence) |
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H03B 5/26 | UGR2 | . . | frequency-determining element being part of bridge circuit in closed ring around which signal is transmitted; frequency-determining element being connected via a bridge circuit to such a closed ring, e.g. Wien-Bridge oscillator, parallel-T oscillator |
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H03B 5/28 | UGR3 | . . . | active element in amplifier being vacuum tube |
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H03B 5/30 | UGR1 | . | with frequency-determining element being electromechanical resonator |
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H03B 5/32 | UGR2 | . . | being a piezo-electric resonator (piezo-electric elements in general H01L 41/00) |
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H03B 5/34 | UGR3 | . . . | active element in amplifier being vacuum tube (H03B 5/38 takes precedence) |
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H03B 5/36 | UGR3 | . . . | active element in amplifier being semiconductor device (H03B 5/38 takes precedence) |
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H03B 5/38 | UGR3 | . . . | frequency-determining element being connected via bridge circuit to closed ring around which signal is transmitted |
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H03B 5/40 | UGR2 | . . | being a magnetostrictive resonator (H03B 5/42 takes precedence; magnetostrictive elements in general H01L 41/00) |
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H03B 5/42 | UGR2 | . . | frequency-determining element connected via bridge circuit to closed ring around which signal is transmitted |
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H03B 7/00 | HGR | Generation of oscillations using active element having a negative resistance between two of its electrodes (H03B 9/00 takes precedence) |
H03B 7/02 | UGR1 | . | with frequency-determining element comprising lumped inductance and capacitance |
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H03B 7/04 | UGR2 | . . | active element being vacuum tube |
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H03B 7/06 | UGR2 | . . | active element being semiconductor device |
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H03B 7/08 | UGR3 | . . . | being a tunnel diode |
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H03B 7/10 | UGR2 | . . | active element being gas-discharge or arc-discharge tube |
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H03B 7/12 | UGR1 | . | with frequency-determining element comprising distributed inductance and capacitance |
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H03B 7/14 | UGR2 | . . | active element being semiconductor device |
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H03B 9/00 | HGR | Generation of oscillations using transit-time effects [2] |
H03B 9/01 | UGR1 | . | using discharge tubes [2] |
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H03B 9/02 | UGR2 | . . | using a retarding-field tube (using klystrons H03B 9/04) [2] |
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H03B 9/04 | UGR2 | |
H03B 9/06 | UGR3 | . . . | using a reflex klystron [2] |
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H03B 9/08 | UGR2 | . . | using a travelling-wave tube [2] |
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H03B 9/10 | UGR2 | |
H03B 9/12 | UGR1 | . | using solid state devices, e.g. Gunn-effect devices [2] |
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H03B 9/14 | UGR2 | . . | and elements comprising distributed inductance and capacitance [3] |
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H03B 11/00 | HGR | Generation of oscillations using a shock-excited tuned circuit (with feedback H03B 5/00) |
H03B 11/02 | UGR1 | . | excited by spark (spark gaps therefor H01T 9/00) |
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H03B 11/04 | UGR1 | |
H03B 11/06 | UGR2 | . . | by mechanical interrupter |
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H03B 11/08 | UGR2 | . . | interrupter being discharge tube |
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H03B 11/10 | UGR2 | . . | interrupter being semiconductor device |
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H03B 13/00 | HGR | Generation of oscillations using deflection of electron beam in a cathode-ray tube |
H03B 15/00 | HGR | Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using super-conductivity effects (galvano-magnetic devices per seH01L 43/00) |
H03B 17/00 | HGR | Generation of oscillations using radiation source and detector, e.g. with interposed variable obturator |
H03B 19/00 | HGR | Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source (transference of modulation from one carrier to another H03D 7/00) |
H03B 19/03 | UGR1 | . | using non-linear inductance [3] |
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H03B 19/05 | UGR1 | . | using non-linear capacitance, e.g. varactor diodes [3] |
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H03B 19/06 | UGR1 | . | by means of discharge device or semiconductor device with more than two electrodes |
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H03B 19/08 | UGR2 | . . | by means of a discharge device |
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H03B 19/10 | UGR3 | . . . | using multiplication only |
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H03B 19/12 | UGR3 | |
H03B 19/14 | UGR2 | . . | by means of a semiconductor device |
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H03B 19/16 | UGR1 | . | using uncontrolled rectifying devices, e.g. rectifying diodes or Schottky diodes [3] |
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H03B 19/18 | UGR2 | . . | and elements comprising distributed inductance and capacitance [3] |
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H03B 19/20 | UGR2 | . . | being diodes exhibiting charge storage or enhancement effects [3] |
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H03B 21/00 | HGR | Generation of oscillations by combining unmodulated signals of different frequencies (H03B 19/00 takes precedence; frequency changing circuits in general H03D) [3] |
H03B 21/01 | UGR1 | . | by beating unmodulated signals of different frequencies [3] |
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H03B 21/02 | UGR2 | . . | by plural beating, i.e. for frequency synthesis [3] |
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H03B 21/04 | UGR2 | . . | using several similar stages [3] |
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H03B 23/00 | HGR | Generation of oscillations periodically swept over a predetermined frequency range (angle-modulating circuits in general H03C 3/00) |
H03B 25/00 | HGR | Simultaneous generation by a free-running oscillator of oscillations having different frequencies |
H03B 27/00 | HGR | Generation of oscillations providing a plurality of outputs of the same frequency but differing in phase, other than merely two anti-phase outputs |
H03B 28/00 | HGR | Generation of oscillations by methods not covered by groups H03B 5/00-H03B 27/00, including modification of the waveform to produce sinusoidal oscillations (analogue function generators for performing computing operations G06G 7/26; use of transformers for conversion of waveform in ac–ac converters H02M 5/18) [4] |
H03B 29/00 | HGR | Generation of noise currents and voltages |