IPC-Stelle: H01S [Version 2006.01]

SymbolTypTitel
HSKSECTION H — ELECTRICITY
H01KLBASIC ELECTRIC ELEMENTS
H01SUKLDEVICES USING STIMULATED EMISSION
H01S 1/00HGRMasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of electromagnetic waves of wavelength longer than that of infra-red waves
H01S 1/02UGR1
.solid
H01S 1/04UGR1
.liquid
H01S 1/06UGR1
.gaseous
H01S 3/00HGRLasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves (semiconductor lasers H01S 5/00)
H01S 3/02UGR1
.Constructional details
H01S 3/03UGR2
. .of gas laser discharge tubes [2]
H01S 3/032UGR3
. . .for confinement of the discharge, e.g. by special features of the discharge constricting tube [5]
H01S 3/034UGR3
. . .Optical devices within, or forming part of, the tube, e.g. windows, mirrors (reflectors having variable properties or positions for initial adjustment of the resonator H01S 3/086) [5]
H01S 3/036UGR3
. . .Means for obtaining or maintaining the desired gas pressure within the tube, e.g. by gettering, replenishing; Means for circulating the gas, e.g. for equalising the pressure within the tube (cooling arrangements for gas lasers H01S 3/041; gas dynamic lasers H01S 3/0979) [5]
H01S 3/038UGR3
. . .Electrodes, e.g. special shape, configuration or composition [5]
H01S 3/04UGR2
. .Cooling arrangements
H01S 3/041UGR3
. . .for gas lasers [5]
H01S 3/042UGR3
. . .for solid state lasers [5]
H01S 3/05UGR1
.Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
H01S 3/06UGR2
. .Construction or shape of active medium
H01S 3/063UGR3
. . .Waveguide lasers, e.g. laser amplifiers [7]
H01S 3/067UGR4
. . . .Fibre lasers [7]
H01S 3/07UGR3
. . .consisting of a plurality of parts, e.g. segments (H01S 3/067 takes precedence) [2, 7]
H01S 3/08UGR2
. .Construction or shape of optical resonators or components thereof [2]
H01S 3/081UGR3
. . .comprising more than two reflectors [2]
H01S 3/082UGR4
. . . .defining a plurality of resonators, e.g. for mode selection [2]
H01S 3/083UGR4
. . . .Ring lasers (ring laser gyrometers G01C 19/66) [2]
H01S 3/086UGR3
. . .One or more reflectors having variable properties or positions for initial adjustment of the resonator (varying a parameter of the laser output during operation H01S 3/10; stabilisation of the laser output H01S 3/13) [2]
H01S 3/09UGR1
.Processes or apparatus for excitation, e.g. pumping
H01S 3/091UGR2
. .using optical pumping [2]
H01S 3/0915UGR3
. . .by incoherent light [5]
H01S 3/092UGR4
. . . .of flash lamp (H01S 3/0937 takes precedence) [2, 5]
H01S 3/093UGR5
. . . . .focusing or directing the excitation energy into the active medium [2, 5]
H01S 3/0933UGR4
. . . .of a semiconductor, e.g. light emitting diode [5]
H01S 3/0937UGR4
. . . .produced by exploding or combustible material [5]
H01S 3/094UGR3
. . .by coherent light [2]
H01S 3/0941UGR4
. . . .of a semiconductor laser, e.g. of a laser diode [6]
H01S 3/0943UGR4
. . . .of a gas laser [5]
H01S 3/0947UGR4
. . . .of an organic dye laser [5]
H01S 3/095UGR2
. .using chemical or thermal pumping [2]
H01S 3/0951UGR3
. . .by increasing the pressure in the laser gas medium [5]
H01S 3/0953UGR4
. . . .Gas dynamic lasers, i.e. with expansion of the laser gas medium to supersonic flow speeds [5]
H01S 3/0955UGR2
. .using pumping by high energy particles [5]
H01S 3/0957UGR3
. . .by high energy nuclear particles [5]
H01S 3/0959UGR3
. . .by an electron beam [5]
H01S 3/097UGR2
. .by gas discharge of a gas laser [2]
H01S 3/0971UGR3
. . .transversely excited (H01S 3/0975 takes precedence) [5]
H01S 3/0973UGR4
. . . .having a travelling wave passing through the active medium [5]
H01S 3/0975UGR3
. . .using inductive or capacitive excitation [5]
H01S 3/0977UGR3
. . .having auxiliary ionisation means [5]
H01S 3/0979UGR3
. . .Gas dynamic lasers, i.e. with expansion of the laser gas medium to supersonic flow speeds [5]
H01S 3/098UGR1
.Mode locking; Mode suppression (mode suppression using a plurality of resonators H01S 3/082) [2]
H01S 3/10UGR1
.Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating (mode locking H01S 3/098; controlling of light beams, frequency-changing, non-linear optics, optical logic elements, in general G02F) [2]
H01S 3/101UGR2
. .Lasers provided with means to change the location from which, or the direction in which, laser radiation is emitted (optical scanning systems in general G02B 26/10; devices or arrangements for the electro-, magneto-, or acousto-optical deflection G02F 1/29) [2]
H01S 3/102UGR2
. .by controlling the active medium, e.g. by controlling the processes or apparatus for excitation (H01S 3/13 takes precedence) [4]
H01S 3/104UGR3
. . .in gas lasers [4]
H01S 3/105UGR2
. .by controlling the mutual position or the reflecting properties of the reflectors of the cavity (H01S 3/13 takes precedence) [4]
H01S 3/1055UGR3
. . .one of the reflectors being constituted by a diffraction grating [4]
H01S 3/106UGR2
. .by controlling a device placed within the cavity (H01S 3/13 takes precedence) [4]
H01S 3/107UGR3
. . .using an electro-optical device, e.g. exhibiting Pockels- or Kerr-effect [4]
H01S 3/108UGR3
. . .using a non-linear optical device, e.g. exhibiting Brillouin- or Raman-scattering [4]
H01S 3/109UGR4
. . . .Frequency multiplying, e.g. harmonic generation [4]
H01S 3/11UGR2
. .in which the quality factor of the optical resonator is rapidly changed, i.e. giant-pulse technique
H01S 3/113UGR3
. . .using bleachable or solarising media [2]
H01S 3/115UGR3
. . .using an electro-optical device [4]
H01S 3/117UGR3
. . .using an acousto-optical device [4]
H01S 3/121UGR3
. . .using a mechanical device [4]
H01S 3/123UGR4
. . . .Rotating mirror [4]
H01S 3/125UGR4
. . . .Rotating prism [4]
H01S 3/127UGR3
. . .Plural Q-switches [4]
H01S 3/13UGR2
. .Stabilisation of laser output parameters, e.g. frequency, amplitude [2]
H01S 3/131UGR3
. . .by controlling the active medium, e.g. by controlling the processes or apparatus for excitation [4]
H01S 3/134UGR4
. . . .in gas lasers [4]
H01S 3/136UGR3
. . .by controlling a device placed within the cavity [4]
H01S 3/137UGR4
. . . .for stabilising of frequency [4]
H01S 3/139UGR3
. . .by controlling the mutual position or the reflecting properties of the reflectors of the cavity [4]
H01S 3/14UGR1
.characterised by the material used as the active medium
H01S 3/16UGR2
. .Solid materials
H01S 3/17UGR3
. . .amorphous, e.g. glass [2]
H01S 3/20UGR2
. .Liquids
H01S 3/207UGR3
. . .including a chelate [5]
H01S 3/213UGR3
. . .including an organic dye [5]
H01S 3/22UGR2
. .Gases
H01S 3/223UGR3
. . .the active gas being polyatomic, i.e. containing more than one atom (H01S 3/227 takes precedence) [2, 5]
H01S 3/225UGR4
. . . .comprising an excimer or exciplex [5]
H01S 3/227UGR3
. . .Metal vapour [5]
H01S 3/23UGR1
.Arrangement of two or more lasers not provided for in groups H01S 3/02-H01S 3/14, e.g. tandem arrangement of separate active media (involving only semiconductor lasers H01S 5/40) [2, 7]
H01S 3/30UGR1
.using scattering effects, e.g. stimulated Brillouin or Raman effects [2]
H01S 4/00HGRDevices using stimulated emission of wave energy other than those covered by groups H01S 1/00, H01S 3/00 or H01S 5/00, e.g. phonon maser, gamma maser
H01S 5/00HGRSemiconductor lasers [7]
H01S 5/02UGR1
.Structural details or components not essential to laser action [7]
H01S 5/022UGR2
. .Mountings; Housings [7]
H01S 5/024UGR2
. .Cooling arrangements [7]
H01S 5/026UGR2
. .Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers (stabilisation of output H01S 5/06; coupling light guides with opto-electronic elements G02B 6/42; devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate, specially adapted for light emission H01L 27/15) [7]
H01S 5/028UGR2
. .Coatings [7]
H01S 5/04UGR1
.Processes or apparatus for excitation, e.g. pumping (H01S 5/06 takes precedence) [7]
H01S 5/042UGR2
. .Electrical excitation [7]
H01S 5/06UGR1
.Arrangements for controlling the laser output parameters, e.g. by operating on the active medium (transmission systems employing light H04B 10/00) [7]
H01S 5/062UGR2
. .by varying the potential of the electrodes (H01S 5/065 takes precedence) [7]
H01S 5/0625UGR3
. . .in multi-section lasers [7]
H01S 5/065UGR2
. .Mode locking; Mode suppression; Mode selection [7]
H01S 5/068UGR2
. .Stabilisation of laser output parameters (H01S 5/0625 takes precedence) [7]
H01S 5/0683UGR3
. . .by monitoring the optical output parameters [7]
H01S 5/0687UGR4
. . . .Stabilising the frequency of the laser [7]
H01S 5/10UGR1
.Construction or shape of the optical resonator [7]
H01S 5/12UGR2
. .the resonator having a periodic structure, e.g. in distributed feed-back lasers (DFB-lasers) (H01S 5/18 takes precedence) [7]
H01S 5/125UGR3
. . .Distributed Bragg reflector lasers (DBR-lasers) [7]
H01S 5/14UGR2
. .External cavity lasers (H01S 5/18 takes precedence; mode locking H01S 5/065) [7]
H01S 5/16UGR2
. .Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface (H01S 5/14 takes precedence) [7]
H01S 5/18UGR2
. .Surface-emitting lasers (SE-lasers) [7]
H01S 5/183UGR3
. . .having a vertical cavity (VCSE-lasers) [7]
H01S 5/187UGR3
. . .using a distributed Bragg reflector (SE-DBR-lasers) (H01S 5/183 takes precedence) [7]
H01S 5/20UGR1
.Structure or shape of the semiconductor body to guide the optical wave [7]
H01S 5/22UGR2
. .having a ridge or a stripe structure [7]
H01S 5/223UGR3
. . .Buried stripe structure (H01S 5/227 takes precedence) [7]
H01S 5/227UGR3
. . .Buried mesa structure [7]
H01S 5/24UGR2
. .having a grooved structure, e.g. V-grooved [7]
H01S 5/30UGR1
.Structure or shape of the active region; Materials used for the active region [7]
H01S 5/32UGR2
. .comprising PN junctions, e.g. hetero- or double- hetero-structures (H01S 5/34, H01S 5/36 take precedence) [7]
H01S 5/323UGR3
. . .in AIIIBV compounds, e.g. AlGaAs-laser [7]
H01S 5/327UGR3
. . .in AIIBVI compounds, e.g. ZnCdSe-laser [7]
H01S 5/34UGR2
. .comprising quantum well or superlattice structures, e.g. single quantum well lasers (SQW-lasers), multiple quantum well lasers (MQW-lasers), graded index separate confinement heterostructure lasers (GRINSCH-lasers) (H01S 5/36 takes precedence) [7]
H01S 5/343UGR3
. . .in AIIIBV compounds, e.g. AlGaAs-laser [7]
H01S 5/347UGR3
. . .in AIIBVI compounds, e.g. ZnCdSe-laser [7]
H01S 5/36UGR2
. .comprising organic materials (dye lasers H01S 3/213) [2006.01]
H01S 5/40UGR1
.Arrangement of two or more semiconductor lasers, not provided for in groups H01S 5/02-H01S 5/30 (H01S 5/50 takes precedence) [7]
H01S 5/42UGR2
. .Arrays of surface emitting lasers [7]
H01S 5/50UGR1
.Amplifier structures not provided for in groups H01S 5/02-H01S 5/30 (as repeaters in transmission systems H04B 10/17) [7]