IPC-Stelle: H01L 27/105 [Version 2006.01]

SymbolTypTitel
HSKSECTION H — ELECTRICITY
H01KLBASIC ELECTRIC ELEMENTS
H01LUKLSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR (conveying systems for semiconductor wafers B65G 49/07; use of semiconductor devices for measuring G01; details of scanning-probe apparatus, in general G12B 21/00; resistors in general H01C; magnets, inductors, transformers H01F; capacitors in general H01G; electrolytic devices H01G 9/00; batteries, accumulators H01M; waveguides, resonators, or lines of the waveguide type H01P; line connectors, current collectors H01R; stimulated-emission devices H01S; electromechanical resonators H03H; loudspeakers, microphones, gramophone pick-ups or like acoustic electromechanical transducers H04R; electric light sources in general H05B; printed circuits, hybrid circuits, casings or constructional details of electrical apparatus, manufacture of assemblages of electrical components H05K; use of semiconductor devices in circuits having a particular application, see the subclass for the application) [2]
H01L 21/00HGRProcesses or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (processes or apparatus specially adapted for the manufacture or treatment of devices provided for in groups H01L 31/00-H01L 51/00 or of parts thereof, see these groups; single-step processes covered by other subclasses, see the relevant subclasses, e.g. C23C, C30B; photomechanical production of textured or patterned surfaces, materials or originals therefor, apparatus specially adapted therefor, in general G03F) [2, 2006.01]
H01L 21/02UGR1
.Manufacture or treatment of semiconductor devices or of parts thereof [2, 2006.01]
H01L 21/027UGR2
. .Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L 21/18 or H01L 21/34 [5]
H01L 21/033UGR3
. . .comprising inorganic layers [5]
H01L 21/04UGR2
. .the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer [2]
H01L 21/06UGR3
. . .the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials [2]
H01L 21/08UGR4
. . . .Preparation of the foundation plate [2]
H01L 21/10UGR4
. . . .Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination [2]
H01L 21/103UGR5
. . . . .Conversion of the selenium or tellurium to the conductive state [2]
H01L 21/105UGR5
. . . . .Treatment of the surface of the selenium or tellurium layer after having been made conductive [2]
H01L 21/108UGR5
. . . . .Provision of discrete insulating layers, i.e. non-genetic barrier layers [2]
H01L 21/12UGR4
. . . .Application of an electrode to the exposed surface of the selenium or tellurium after the selenium or tellurium has been applied to the foundation plate [2]
H01L 21/14UGR4
. . . .Treatment of the complete device, e.g. by electroforming to form a barrier [2]
H01L 21/145UGR5
. . . . .Ageing [2]
H01L 21/16UGR3
. . .the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide [2]
H01L 21/18UGR3
. . .the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials [2, 6, 7]
H01L 21/20UGR4
. . . .Deposition of semiconductor materials on a substrate, e.g. epitaxial growth [2]
H01L 21/203UGR5
. . . . .using physical deposition, e.g. vacuum deposition, sputtering [2]
H01L 21/205UGR5
. . . . .using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition [2]
H01L 21/208UGR5
. . . . .using liquid deposition [2]
H01L 21/22UGR4
. . . .Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regions; Redistribution of impurity materials, e.g. without introduction or removal of further dopant [2]
H01L 21/223UGR5
. . . . .using diffusion into, or out of, a solid from or into a gaseous phase [2]
H01L 21/225UGR5
. . . . .using diffusion into, or out of, a solid from or into a solid phase, e.g. a doped oxide layer [2]
H01L 21/228UGR5
. . . . .using diffusion into, or out of, a solid from or into a liquid phase, e.g. alloy diffusion processes [2]
H01L 21/24UGR4
. . . .Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body [2]
H01L 21/26UGR4
. . . .Bombardment with wave or particle radiation (thermal treatment H01L 21/324) [2]
H01L 21/261UGR5
. . . . .to produce a nuclear reaction transmuting chemical elements [6]
H01L 21/263UGR5
. . . . .with high-energy radiation (H01L 21/261 takes precedence) [2, 6]
H01L 21/265UGR6
. . . . . .producing ion implantation (ion-beam tubes for localised treatment H01J 37/30) [2]
H01L 21/266UGR7
. . . . . . .using masks [5]
H01L 21/268UGR6
. . . . . .using electromagnetic radiation, e.g. laser radiation [2]
H01L 21/28UGR4
. . . .Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L 21/20-H01L 21/268 [2]
H01L 21/283UGR5
. . . . .Deposition of conductive or insulating materials for electrodes [2]
H01L 21/285UGR6
. . . . . .from a gas or vapour, e.g. condensation [2]
H01L 21/288UGR6
. . . . . .from a liquid, e.g. electrolytic deposition [2]
H01L 21/30UGR4
. . . .Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L 21/20-H01L 21/26 (manufacture of electrodes thereon H01L 21/28) [2]
H01L 21/301UGR5
. . . . .to subdivide a semiconductor body into separate parts, e.g. making partitions (cutting H01L 21/304) [6]
H01L 21/302UGR5
. . . . .to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting [2]
H01L 21/304UGR6
. . . . . .Mechanical treatment, e.g. grinding, polishing, cutting [2]
H01L 21/306UGR6
. . . . . .Chemical or electrical treatment, e.g. electrolytic etching (to form insulating layers H01L 21/31; after-treatment of insulating layers H01L 21/3105) [2]
H01L 21/3063UGR7
. . . . . . .Electrolytic etching [6]
H01L 21/3065UGR7
. . . . . . .Plasma etching; Reactive-ion etching [6]
H01L 21/308UGR7
. . . . . . .using masks (H01L 21/3063, H01L 21/3065, take precedence) [2, 6]
H01L 21/31UGR5
. . . . .to form insulating layers thereon, e.g. for masking or by using photolithographic techniques (layers forming electrodes H01L 21/28; encapsulating layers H01L 21/56); After-treatment of these layers; Selection of materials for these layers [2, 5]
H01L 21/3105UGR6
. . . . . .After-treatment [5]
H01L 21/311UGR7
. . . . . . .Etching the insulating layers [5]
H01L 21/3115UGR7
. . . . . . .Doping the insulating layers [5]
H01L 21/312UGR6
. . . . . .Organic layers, e.g. photoresist (H01L 21/3105, H01L 21/32 take precedence) [2, 5]
H01L 21/314UGR6
. . . . . .Inorganic layers (H01L 21/3105, H01L 21/32 take precedence) [2, 5]
H01L 21/316UGR7
. . . . . . .composed of oxides or glassy oxides or oxide-based glass [2]
H01L 21/318UGR7
. . . . . . .composed of nitrides [2]
H01L 21/32UGR6
. . . . . .using masks [2, 5]
H01L 21/3205UGR6
. . . . . .Deposition of non-insulating-, e.g. conductive-, resistive-, layers, on insulating layers (arrangements for conducting electric current within the device H01L 23/52); After-treatment of these layers (manufacture of electrodes H01L 21/28) [5]
H01L 21/321UGR7
. . . . . . .After-treatment [5]
H01L 21/3213UGR8
. . . . . . . .Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer [6]
H01L 21/3215UGR8
. . . . . . . .Doping the layers [5]
H01L 21/322UGR5
. . . . .to modify their internal properties, e.g. to produce internal imperfections [2]
H01L 21/324UGR5
. . . . .Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering (H01L 21/20-H01L 21/288, H01L 21/302-H01L 21/322 take precedence) [2]
H01L 21/326UGR5
. . . . .Application of electric currents or fields, e.g. for electroforming (H01L 21/20-H01L 21/288, H01L 21/302-H01L 21/324 take precedence) [2]
H01L 21/328UGR4
. . . .Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors [5]
H01L 21/329UGR5
. . . . .the devices comprising one or two electrodes, e.g. diodes [5]
H01L 21/33UGR5
. . . . .the devices comprising three or more electrodes [5]
H01L 21/331UGR6
. . . . . .Transistors [5]
H01L 21/332UGR6
. . . . . .Thyristors [5]
H01L 21/334UGR4
. . . .Multistep processes for the manufacture of devices of the unipolar type [5]
H01L 21/335UGR5
. . . . .Field-effect transistors [5]
H01L 21/336UGR6
. . . . . .with an insulated gate [5]
H01L 21/337UGR6
. . . . . .with a PN junction gate [5]
H01L 21/338UGR6
. . . . . .with a Schottky gate [5]
H01L 21/339UGR5
. . . . .Charge transfer devices [5, 6]
H01L 21/34UGR3
. . .the devices having semiconductor bodies not provided for in groups H01L 21/06, H01L 21/16, and H01L 21/18 with or without impurities, e.g. doping materials [2]
H01L 21/36UGR4
. . . .Deposition of semiconductor materials on a substrate, e.g. epitaxial growth [2]
H01L 21/363UGR5
. . . . .using physical deposition, e.g. vacuum deposition, sputtering [2]
H01L 21/365UGR5
. . . . .using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition [2]
H01L 21/368UGR5
. . . . .using liquid deposition [2]
H01L 21/38UGR4
. . . .Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regions [2]
H01L 21/383UGR5
. . . . .using diffusion into, or out of, a solid from or into a gaseous phase [2]
H01L 21/385UGR5
. . . . .using diffusion into, or out of, a solid from or into a solid phase, e.g. a doped oxide layer [2]
H01L 21/388UGR5
. . . . .using diffusion into, or out of, a solid from or into a liquid phase, e.g. alloy diffusion processes [2]
H01L 21/40UGR4
. . . .Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body [2]
H01L 21/42UGR4
. . . .Bombardment with radiation [2]
H01L 21/423UGR5
. . . . .with high-energy radiation [2]
H01L 21/425UGR6
. . . . . .producing ion implantation (ion-beam tubes for localised treatment H01J 37/30) [2]
H01L 21/426UGR7
. . . . . . .using masks [5]
H01L 21/428UGR6
. . . . . .using electromagnetic radiation, e.g. laser radiation [2]
H01L 21/44UGR4
. . . .Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L 21/36-H01L 21/428 [2]
H01L 21/441UGR5
. . . . .Deposition of conductive or insulating materials for electrodes [2]
H01L 21/443UGR6
. . . . . .from a gas or vapour, e.g. condensation [2]
H01L 21/445UGR6
. . . . . .from a liquid, e.g. electrolytic deposition [2]
H01L 21/447UGR5
. . . . .involving the application of pressure, e.g. thermo-compression bonding (H01L 21/607 takes precedence) [2]
H01L 21/449UGR5
. . . . .involving the application of mechanical vibrations, e.g. ultrasonic vibrations [2]
H01L 21/46UGR4
. . . .Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L 21/36-H01L 21/428 (manufacture of electrodes thereon H01L 21/44) [2]
H01L 21/461UGR5
. . . . .to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting [2]
H01L 21/463UGR6
. . . . . .Mechanical treatment, e.g. grinding, ultrasonic treatment [2]
H01L 21/465UGR6
. . . . . .Chemical or electrical treatment, e.g. electrolytic etching (to form insulating layers H01L 21/469) [2]
H01L 21/467UGR7
. . . . . . .using masks [2]
H01L 21/469UGR6
. . . . . .to form insulating layers thereon, e.g. for masking or by using photolithographic techniques (layers forming electrodes H01L 21/44; encapsulating layers H01L 21/56); After-treatment of these layers [2, 5]
H01L 21/47UGR7
. . . . . . .Organic layers, e.g. photoresist (H01L 21/475, H01L 21/4757 take precedence) [2, 5]
H01L 21/471UGR7
. . . . . . .Inorganic layers (H01L 21/475, H01L 21/4757 take precedence) [2, 5]
H01L 21/473UGR8
. . . . . . . .composed of oxides or glassy oxides or oxide-based glass [2]
H01L 21/475UGR7
. . . . . . .using masks [2, 5]
H01L 21/4757UGR7
. . . . . . .After-treatment [5]
H01L 21/4763UGR6
. . . . . .Deposition of non-insulating-, e.g. conductive-, resistive-, layers on insulating layers; After-treatment of these layers (manufacture of electrodes H01L 21/28) [5]
H01L 21/477UGR5
. . . . .Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering (H01L 21/36-H01L 21/449, H01L 21/461-H01L 21/475 take precedence) [2]
H01L 21/479UGR5
. . . . .Application of electric currents or fields, e.g. for electroforming (H01L 21/36-H01L 21/449, H01L 21/461-H01L 21/477 take precedence) [2]
H01L 21/48UGR3
. . .Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L 21/06-H01L 21/326 (containers, encapsulations, fillings, mountings per seH01L 23/00) [2]
H01L 21/50UGR3
. . .Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L 21/06-H01L 21/326 [2]
H01L 21/52UGR4
. . . .Mounting semiconductor bodies in containers [2]
H01L 21/54UGR4
. . . .Providing fillings in containers, e.g. gas fillings [2]
H01L 21/56UGR4
. . . .Encapsulations, e.g. encapsulating layers, coatings [2]
H01L 21/58UGR4
. . . .Mounting semiconductor devices on supports [2]
H01L 21/60UGR4
. . . .Attaching leads or other conductive members, to be used for carrying current to or from the device in operation [2]
H01L 21/603UGR5
. . . . .involving the application of pressure, e.g. thermo-compression bonding (H01L 21/607 takes precedence) [2]
H01L 21/607UGR5
. . . . .involving the application of mechanical vibrations, e.g. ultrasonic vibrations [2]
H01L 21/62UGR2
. .the devices having no potential-jump barriers or surface barriers [2]
H01L 21/64UGR1
.Manufacture or treatment of solid state devices other than semiconductor devices, or of parts thereof, not specially adapted for a single type of device provided for in groups H01L 31/00-H01L 51/00 [2, 2006.01]
H01L 21/66UGR1
.Testing or measuring during manufacture or treatment (after manufacture G01R 31/26) [2]
H01L 21/67UGR1
.Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components [2006.01]
H01L 21/673UGR2
. .using specially adapted carriers [2006.01]
H01L 21/677UGR2
. .for conveying, e.g. between different work stations [2006.01]
H01L 21/68UGR2
. .for positioning, orientation or alignment (for conveying H01L 21/677) [2, 2006.01]
H01L 21/683UGR2
. .for supporting or gripping (for conveying H01L 21/677, for positioning, orientation or alignment H01L 21/68) [2006.01]
H01L 21/687UGR3
. . .using mechanical means, e.g. chucks, clamps or pinches [2006.01]
H01L 21/70UGR1
.Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof (manufacture of assemblies consisting of preformed electrical components H05K 3/00, H05K 13/00) [2]
H01L 21/71UGR2
. .Manufacture of specific parts of devices defined in group H01L 21/70 (H01L 21/28, H01L 21/44, H01L 21/48 take precedence) [6]
H01L 21/74UGR3
. . .Making of buried regions of high impurity concentration, e.g. buried collector layers, internal connections [2]
H01L 21/76UGR3
. . .Making of isolation regions between components [2]
H01L 21/761UGR4
. . . .PN junctions [6]
H01L 21/762UGR4
. . . .Dielectric regions [6]
H01L 21/763UGR4
. . . .Polycrystalline semiconductor regions [6]
H01L 21/764UGR4
. . . .Air gaps [6]
H01L 21/765UGR4
. . . .by field-effect [6]
H01L 21/768UGR3
. . .Applying interconnections to be used for carrying current between separate components within a device [6]
H01L 21/77UGR2
. .Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate [6]
H01L 21/78UGR3
. . .with subsequent division of the substrate into plural individual devices (cutting to change the surface-physical characteristics or shape of semiconductor bodies H01L 21/304) [2, 6]
H01L 21/782UGR4
. . . .to produce devices, each consisting of a single circuit element (H01L 21/82 takes precedence) [6]
H01L 21/784UGR5
. . . . .the substrate being a semiconductor body [6]
H01L 21/786UGR5
. . . . .the substrate being other than a semiconductor body, e.g. insulating body [6]
H01L 21/82UGR4
. . . .to produce devices, e.g. integrated circuits, each consisting of a plurality of components [2]
H01L 21/822UGR5
. . . . .the substrate being a semiconductor, using silicon technology (H01L 21/8258 takes precedence) [6]
H01L 21/8222UGR6
. . . . . .Bipolar technology [6]
H01L 21/8224UGR7
. . . . . . .comprising a combination of vertical and lateral transistors [6]
H01L 21/8226UGR7
. . . . . . .comprising merged transistor logic or integrated injection logic [6]
H01L 21/8228UGR7
. . . . . . .Complementary devices, e.g. complementary transistors [6]
H01L 21/8229UGR7
. . . . . . .Memory structures [6]
H01L 21/8232UGR6
. . . . . .Field-effect technology [6]
H01L 21/8234UGR7
. . . . . . .MIS technology [6]
H01L 21/8236UGR8
. . . . . . . .Combination of enhancement and depletion transistors [6]
H01L 21/8238UGR8
. . . . . . . .Complementary field-effect transistors, e.g. CMOS [6]
H01L 21/8239UGR8
. . . . . . . .Memory structures [6]
H01L 21/8242UGR9
. . . . . . . . .Dynamic random access memory structures (DRAM) [6]
H01L 21/8244UGR9
. . . . . . . . .Static random access memory structures (SRAM) [6]
H01L 21/8246UGR9
. . . . . . . . .Read-only memory structures (ROM) [6]
H01L 21/8247UGR10
. . . . . . . . . .electrically-programmable (EPROM) [6]
H01L 21/8248UGR6
. . . . . .Combination of bipolar and field-effect technology [6]
H01L 21/8249UGR7
. . . . . . .Bipolar and MOS technology [6]
H01L 21/8252UGR5
. . . . .the substrate being a semiconductor, using III-V technology (H01L 21/8258 takes precedence) [6]
H01L 21/8254UGR5
. . . . .the substrate being a semiconductor, using II-VI technology (H01L 21/8258 takes precedence) [6]
H01L 21/8256UGR5
. . . . .the substrate being a semiconductor, using technologies not covered by one of groups H01L 21/822, H01L 21/8252 or H01L 21/8254 (H01L 21/8258 takes precedence) [6]
H01L 21/8258UGR5
. . . . .the substrate being a semiconductor, using a combination of technologies covered by H01L 21/822, H01L 21/8252, H01L 21/8254 or H01L 21/8256 [6]
H01L 21/84UGR5
. . . . .the substrate being other than a semiconductor body, e.g. being an insulating body [2, 6]
H01L 21/86UGR6
. . . . . .the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS [2, 6]
H01L 21/98UGR2
. .Assembly of devices consisting of solid state components formed in or on a common substrate; Assembly of integrated circuit devices (H01L 21/50 takes precedence; assemblies H01L 25/00) [2, 5]
H01L 23/00HGRDetails of semiconductor or other solid state devices (H01L 25/00 takes precedence) [2, 5]
H01L 23/02UGR1
.Containers; Seals (H01L 23/12, H01L 23/34, H01L 23/48, H01L 23/552 take precedence) [2, 5]
H01L 23/04UGR2
. .characterised by the shape [2]
H01L 23/043UGR3
. . .the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body [5]
H01L 23/045UGR4
. . . .the other leads having an insulating passage through the base [5]
H01L 23/047UGR4
. . . .the other leads being parallel to the base [5]
H01L 23/049UGR4
. . . .the other leads being perpendicular to the base [5]
H01L 23/051UGR4
. . . .another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type [5]
H01L 23/053UGR3
. . .the container being a hollow construction and having an insulating base as a mounting for the semiconductor body [5]
H01L 23/055UGR4
. . . .the leads having a passage through the base [5]
H01L 23/057UGR4
. . . .the leads being parallel to the base [5]
H01L 23/06UGR2
. .characterised by the material of the container or its electrical properties [2]
H01L 23/08UGR3
. . .the material being an electrical insulator, e.g. glass [2]
H01L 23/10UGR2
. .characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container [2]
H01L 23/12UGR1
.Mountings, e.g. non-detachable insulating substrates [2]
H01L 23/13UGR2
. .characterised by the shape [5]
H01L 23/14UGR2
. .characterised by the material or its electrical properties [2]
H01L 23/15UGR3
. . .Ceramic or glass substrates [5]
H01L 23/16UGR1
.Fillings or auxiliary members in containers, e.g. centering rings (H01L 23/42, H01L 23/552 take precedence) [2, 5]
H01L 23/18UGR2
. .Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device [2]
H01L 23/20UGR3
. . .gaseous at the normal operating temperature of the device [2]
H01L 23/22UGR3
. . .liquid at the normal operating temperature of the device [2]
H01L 23/24UGR3
. . .solid or gel, at the normal operating temperature of the device [2]
H01L 23/26UGR3
. . .including materials for absorbing or reacting with moisture or other undesired substances [2]
H01L 23/28UGR1
.Encapsulation, e.g. encapsulating layers, coatings (H01L 23/552 takes precedence) [2, 5]
H01L 23/29UGR2
. .characterised by the material [5]
H01L 23/31UGR2
. .characterised by the arrangement [5]
H01L 23/32UGR1
.Holders for supporting the complete device in operation, i.e. detachable fixtures (H01L 23/40 takes precedence; connectors in general H01R; for printed circuits H05K) [2, 5]
H01L 23/34UGR1
.Arrangements for cooling, heating, ventilating or temperature compensation [2, 5]
H01L 23/36UGR2
. .Selection of materials, or shaping, to facilitate cooling or heating, e.g. heat sinks [2]
H01L 23/367UGR3
. . .Cooling facilitated by shape of device [5]
H01L 23/373UGR3
. . .Cooling facilitated by selection of materials for the device [5]
H01L 23/38UGR2
. .Cooling arrangements using the Peltier effect [2]
H01L 23/40UGR2
. .Mountings or securing means for detachable cooling or heating arrangements [2]
H01L 23/42UGR2
. .Fillings or auxiliary members in containers selected or arranged to facilitate heating or cooling (characterised by selection of materials for the device H01L 23/373) [2, 5]
H01L 23/427UGR3
. . .Cooling by change of state, e.g. use of heat pipes [5]
H01L 23/433UGR3
. . .Auxiliary members characterised by their shape, e.g. pistons [5]
H01L 23/44UGR2
. .the complete device being wholly immersed in a fluid other than air (H01L 23/427 takes precedence) [2, 5]
H01L 23/46UGR2
. .involving the transfer of heat by flowing fluids (H01L 23/42, H01L 23/44 take precedence) [2]
H01L 23/467UGR3
. . .by flowing gases, e.g. air [5]
H01L 23/473UGR3
. . .by flowing liquids [5]
H01L 23/48UGR1
.Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements (in general H01R) [2]
H01L 23/482UGR2
. .consisting of lead-in layers inseparably applied to the semiconductor body [5]
H01L 23/485UGR3
. . .consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts [5]
H01L 23/488UGR2
. .consisting of soldered or bonded constructions [5, 2006.01]
H01L 23/49UGR3
. . .wire-like [5]
H01L 23/492UGR3
. . .Bases or plates [5]
H01L 23/495UGR3
. . .Lead-frames [5]
H01L 23/498UGR3
. . .Leads on insulating substrates [5]
H01L 23/50UGR2
. .for integrated circuit devices (H01L 23/482-H01L 23/498 take precedence) [2, 5]
H01L 23/52UGR1
.Arrangements for conducting electric current within the device in operation from one component to another [2]
H01L 23/522UGR2
. .including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body [5]
H01L 23/525UGR3
. . .with adaptable interconnections [5]
H01L 23/528UGR3
. . .Layout of the interconnection structure [5]
H01L 23/532UGR3
. . .characterised by the materials [5]
H01L 23/535UGR2
. .including internal interconnections, e.g. cross-under constructions [5]
H01L 23/538UGR2
. .the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates (mountings H01L 23/12) [5]
H01L 23/544UGR1
.Marks applied to semiconductor devices, e.g. registration marks, test patterns [5]
H01L 23/552UGR1
.Protection against radiation, e.g. light [5]
H01L 23/556UGR2
. .against alpha rays [5]
H01L 23/58UGR1
.Structural electrical arrangements for semiconductor devices not otherwise provided for [5]
H01L 23/60UGR2
. .Protection against electrostatic charges or discharges, e.g. Faraday shields (in general H05F) [5]
H01L 23/62UGR2
. .Protection against overcurrent or overload, e.g. fuses, shunts [5]
H01L 23/64UGR2
. .Impedance arrangements [5]
H01L 23/66UGR3
. . .High-frequency adaptations [5]
H01L 25/00HGRAssemblies consisting of a plurality of individual semiconductor or other solid state devices (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00; assemblies of photoelectronic cells H01L 31/042; generators using solar cells or solar panels H02N 6/00; details of complete circuit assemblies provided for in another subclass, e.g. details of television receivers, see the relevant subclass, e.g. H04N; details of assemblies of electrical components in general H05K) [2, 5]
H01L 25/03UGR1
.all the devices being of a type provided for in the same subgroup of groups H01L 27/00-H01L 51/00, e.g. assemblies of rectifier diodes [5, 2006.01]
H01L 25/04UGR2
. .the devices not having separate containers [2]
H01L 25/065UGR3
. . .the devices being of a type provided for in group H01L 27/00 [5]
H01L 25/07UGR3
. . .the devices being of a type provided for in group H01L 29/00 [5]
H01L 25/075UGR3
. . .the devices being of a type provided for in group H01L 33/00 [5]
H01L 25/10UGR2
. .the devices having separate containers [2]
H01L 25/11UGR3
. . .the devices being of a type provided for in group H01L 29/00 [5]
H01L 25/13UGR3
. . .the devices being of a type provided for in group H01L 33/00 [5]
H01L 25/16UGR1
.the devices being of types provided for in two or more different main groups of groups H01L 27/00-H01L 51/00, e.g. forming hybrid circuits [2, 2006.01]
H01L 25/18UGR1
.the devices being of types provided for in two or more different subgroups of the same main group of groups H01L 27/00-H01L 51/00 [5, 2006.01]
H01L 27/00HGRDevices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof H01L 21/70, H01L 31/00-H01L 51/00; details thereof H01L 23/00, H01L 29/00-H01L 51/00; assemblies consisting of a plurality of individual solid state devices H01L 25/00; assemblies of electrical components in general H05K) [2, 2006.01]
H01L 27/01UGR1
.comprising only passive thin-film or thick-film elements formed on a common insulating substrate [3]
H01L 27/02UGR1
.including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier [2]
H01L 27/04UGR2
. .the substrate being a semiconductor body [2]
H01L 27/06UGR3
. . .including a plurality of individual components in a non-repetitive configuration [2]
H01L 27/07UGR4
. . . .the components having an active region in common [5]
H01L 27/08UGR3
. . .including only semiconductor components of a single kind [2]
H01L 27/082UGR4
. . . .including bipolar components only [5]
H01L 27/085UGR4
. . . .including field-effect components only [5]
H01L 27/088UGR5
. . . . .the components being field-effect transistors with insulated gate [5]
H01L 27/092UGR6
. . . . . .complementary MIS field-effect transistors [5]
H01L 27/095UGR5
. . . . .the components being Schottky barrier gate field-effect transistors [5]
H01L 27/098UGR5
. . . . .the components being PN junction gate field-effect transistors [5]
H01L 27/10UGR3
. . .including a plurality of individual components in a repetitive configuration [2]
H01L 27/102UGR4
. . . .including bipolar components [5]
H01L 27/105UGR4
. . . .including field-effect components [5]
H01L 27/108UGR5
. . . . .Dynamic random access memory structures [5]
H01L 27/11UGR5
. . . . .Static random access memory structures [5]
H01L 27/112UGR5
. . . . .Read-only memory structures [5]
H01L 27/115UGR6
. . . . . .Electrically programmable read-only memories [5]
H01L 27/118UGR4
. . . .Masterslice integrated circuits [5]
H01L 27/12UGR2
. .the substrate being other than a semiconductor body, e.g. an insulating body [2]
H01L 27/13UGR3
. . .combined with thin-film or thick-film passive components [3]
H01L 27/14UGR1
.including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation (radiation-sensitive components structurally associated with one or more electric light sources only H01L 31/14; couplings of light guides with optoelectronic elements G02B 6/42) [2]
H01L 27/142UGR2
. .Energy conversion devices [5]
H01L 27/144UGR2
. .Devices controlled by radiation [5]
H01L 27/146UGR3
. . .Imager structures [5]
H01L 27/148UGR4
. . . .Charge coupled imagers [5]
H01L 27/15UGR1
.including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission [2]
H01L 27/16UGR1
.including thermoelectric components with or without a junction of dissimilar materials; including thermomagnetic components (using the Peltier effect only for cooling of semiconductor or other solid state devices H01L 23/38) [2]
H01L 27/18UGR1
.including components exhibiting superconductivity [2]
H01L 27/20UGR1
.including piezo-electric components; including electrostrictive components; including magnetostrictive components [2, 7]
H01L 27/22UGR1
.including components using galvano-magnetic effects, e.g. Hall effect; using similar magnetic field effects [2]
H01L 27/24UGR1
.including solid state components for rectifying, amplifying, or switching without a potential-jump barrier or surface barrier [2]
H01L 27/26UGR1
.including bulk negative resistance effect components [2]
H01L 27/28UGR1
.including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part [2006.01]
H01L 27/30UGR2
. .with components specially adapted for sensing infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation; with components specially adapted for either the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation [2006.01]
H01L 27/32UGR2
. .with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes [2006.01]
H01L 29/00HGRSemiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (H01L 31/00-H01L 47/00, H01L 51/05 take precedence; processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof H01L 21/00; details other than of semiconductor bodies or of electrodes thereof H01L 23/00; devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00; resistors in general H01C; capacitors in general H01G) [2, 6]
H01L 29/02UGR1
.Semiconductor bodies [2]
H01L 29/04UGR2
. .characterised by their crystalline structure, e.g. polycrystalline, cubic, particular orientation of crystalline planes (imperfections H01L 29/30) [2]
H01L 29/06UGR2
. .characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions [2]
H01L 29/08UGR3
. . .with semiconductor regions connected to an electrode carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes [2]
H01L 29/10UGR3
. . .with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes [2]
H01L 29/12UGR2
. .characterised by the materials of which they are formed [2]
H01L 29/15UGR3
. . .Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices (such structures applied for the control of light G02F 1/017, applied in semiconductor lasers H01S 5/34) [6]
H01L 29/16UGR3
. . .including, apart from doping materials or other impurities, only elements of the fourth group of the Periodic System in uncombined form [2]
H01L 29/161UGR4
. . . .including two or more of the elements provided for in group H01L 29/16 [2]
H01L 29/165UGR5
. . . . .in different semiconductor regions [2]
H01L 29/167UGR4
. . . .further characterised by the doping material [2]
H01L 29/18UGR3
. . .Selenium or tellurium only, apart from doping materials or other impurities [2]
H01L 29/20UGR3
. . .including, apart from doping materials or other impurities, only AIIIBV compounds [2, 6]
H01L 29/201UGR4
. . . .including two or more compounds [2]
H01L 29/205UGR5
. . . . .in different semiconductor regions [2]
H01L 29/207UGR4
. . . .further characterised by the doping material [2]
H01L 29/22UGR3
. . .including, apart from doping materials or other impurities, only AIIBVI compounds [2]
H01L 29/221UGR4
. . . .including two or more compounds [2]
H01L 29/225UGR5
. . . . .in different semiconductor regions [2]
H01L 29/227UGR4
. . . .further characterised by the doping material [2]
H01L 29/24UGR3
. . .including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups H01L 29/16, H01L 29/18, H01L 29/20, H01L 29/22 (including organic materials H01L 51/00) [2]
H01L 29/26UGR3
. . .including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L 29/16, H01L 29/18, H01L 29/20, H01L 29/22, H01L 29/24 [2]
H01L 29/267UGR4
. . . .in different semiconductor regions [2]
H01L 29/30UGR2
. .characterised by physical imperfections; having polished or roughened surface [2]
H01L 29/32UGR3
. . .the imperfections being within the semiconductor body [2]
H01L 29/34UGR3
. . .the imperfections being on the surface [2]
H01L 29/36UGR2
. .characterised by the concentration or distribution of impurities [2]
H01L 29/38UGR2
. .characterised by combination of features provided for in two or more of the groups H01L 29/04, H01L 29/06, H01L 29/12, H01L 29/30, H01L 29/36 [2]
H01L 29/40UGR1
.Electrodes [2]
H01L 29/41UGR2
. .characterised by their shape, relative sizes or dispositions [6]
H01L 29/417UGR3
. . .carrying the current to be rectified, amplified or switched [6]
H01L 29/423UGR3
. . .not carrying the current to be rectified, amplified or switched [6]
H01L 29/43UGR2
. .characterised by the materials of which they are formed [6]
H01L 29/45UGR3
. . .Ohmic electrodes [6]
H01L 29/47UGR3
. . .Schottky barrier electrodes [6]
H01L 29/49UGR3
. . .Metal-insulator semiconductor electrodes [6]
H01L 29/51UGR4
. . . .Insulating materials associated therewith [6]
H01L 29/66UGR1
.Types of semiconductor device [2]
H01L 29/68UGR2
. .controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched (H01L 29/96 takes precedence) [2]
H01L 29/70UGR3
. . .Bipolar devices [2]
H01L 29/72UGR4
. . . .Transistor-type devices, i.e. able to continuously respond to applied control signals [2]
H01L 29/73UGR5
. . . . .Bipolar junction transistors [5]
H01L 29/732UGR6
. . . . . .Vertical transistors [6]
H01L 29/735UGR6
. . . . . .Lateral transistors [6]
H01L 29/737UGR6
. . . . . .Hetero-junction transistors [6]
H01L 29/739UGR5
. . . . .controlled by field effect [6]
H01L 29/74UGR4
. . . .Thyristor-type devices, e.g. having four-zone regenerative action [2]
H01L 29/744UGR5
. . . . .Gate-turn-off devices [6]
H01L 29/745UGR6
. . . . . .with turn-off by field effect [6]
H01L 29/747UGR5
. . . . .Bidirectional devices, e.g. triacs [2]
H01L 29/749UGR5
. . . . .with turn-on by field effect [6]
H01L 29/76UGR3
. . .Unipolar devices [2]
H01L 29/762UGR4
. . . .Charge transfer devices [6]
H01L 29/765UGR5
. . . . .Charge-coupled devices [6]
H01L 29/768UGR6
. . . . . .with field effect produced by an insulated gate [6]
H01L 29/772UGR4
. . . .Field-effect transistors [6]
H01L 29/775UGR5
. . . . .with one-dimensional charge carrier gas channel, e.g. quantum wire FET [6]
H01L 29/778UGR5
. . . . .with two-dimensional charge carrier gas channel, e.g. HEMT [6]
H01L 29/78UGR5
. . . . .with field effect produced by an insulated gate [2]
H01L 29/786UGR6
. . . . . .Thin-film transistors [6]
H01L 29/788UGR6
. . . . . .with floating gate [5]
H01L 29/792UGR6
. . . . . .with charge trapping gate insulator, e.g. MNOS-memory transistor [5]
H01L 29/80UGR5
. . . . .with field effect produced by a PN or other rectifying junction gate [2]
H01L 29/808UGR6
. . . . . .with a PN junction gate [5]
H01L 29/812UGR6
. . . . . .with a Schottky gate [5]
H01L 29/82UGR2
. .controllable by variation of the magnetic field applied to the device (H01L 29/96 takes precedence) [2, 6]
H01L 29/84UGR2
. .controllable by variation of applied mechanical force, e.g. of pressure (H01L 29/96 takes precedence) [2, 6]
H01L 29/86UGR2
. .controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched (H01L 29/96 takes precedence) [2]
H01L 29/8605UGR3
. . .Resistors with PN junction [6]
H01L 29/861UGR3
. . .Diodes [6]
H01L 29/862UGR4
. . . .Point contact diodes [6]
H01L 29/864UGR4
. . . .Transit-time diodes, e.g. IMPATT, TRAPATT diodes [6]
H01L 29/866UGR4
. . . .Zener diodes [6]
H01L 29/868UGR4
. . . .PIN diodes [6]
H01L 29/87UGR4
. . . .Thyristor diodes, e.g. Shockley diodes, break-over diodes [6]
H01L 29/872UGR4
. . . .Schottky diodes [6]
H01L 29/88UGR4
. . . .Tunnel-effect diodes [2]
H01L 29/885UGR5
. . . . .Esaki diodes [6]
H01L 29/92UGR3
. . .Capacitors with potential-jump barrier or surface barrier [2]
H01L 29/93UGR4
. . . .Variable-capacitance diodes, e.g. varactors [2]
H01L 29/94UGR4
. . . .Metal-insulator-semiconductors, e.g. MOS [2]
H01L 29/96UGR2
. .of a type covered by more than one of groups H01L 29/68, H01L 29/82, H01L 29/84 or H01L 29/86 [2]
H01L 31/00HGRSemiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (H01L 51/42 takes precedence; devices consisting of a plurality of solid state components formed in, or on, a common substrate, other than combinations of radiation-sensitive components with one or more electric light sources, H01L 27/00; roof covering aspects of energy collecting devices E04D 13/18; production of heat using solar heat F24J 2/00; measurement of X-radiation, gamma radiation, corpuscular radiation or cosmic radiation with semiconductor detectors G01T 1/24, with resistance detectors G01T 1/26; measurement of neutron radiation with semiconductor detectors G01T 3/08; couplings of light guides with optoelectronic elements G02B 6/42; obtaining energy from radioactive sources G21H) [2, 6, 2006.01]
H01L 31/02UGR1
.Details [2]
H01L 31/0203UGR2
. .Containers; Encapsulations [5]
H01L 31/0216UGR2
. .Coatings [5]
H01L 31/0224UGR2
. .Electrodes [5]
H01L 31/0232UGR2
. .Optical elements or arrangements associated with the device [5]
H01L 31/0236UGR2
. .Special surface textures [5]
H01L 31/024UGR2
. .Arrangements for cooling, heating, ventilating or temperature compensation [5]
H01L 31/0248UGR1
.characterised by their semiconductor bodies [5]
H01L 31/0256UGR2
. .characterised by the material [5]
H01L 31/0264UGR3
. . .Inorganic materials [5]
H01L 31/0272UGR4
. . . .Selenium or tellurium [5]
H01L 31/028UGR4
. . . .including, apart from doping material or other impurities, only elements of the fourth group of the Periodic System [5]
H01L 31/0288UGR5
. . . . .characterised by the doping material [5]
H01L 31/0296UGR4
. . . .including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe [5]
H01L 31/0304UGR4
. . . .including, apart from doping materials or other impurities, only AIIIBV compounds [5]
H01L 31/0312UGR4
. . . .including, apart from doping materials or other impurities, only AIVBIV compounds, e.g. SiC [5]
H01L 31/032UGR4
. . . .including, apart from doping materials or other impurities, only compounds not provided for in groups H01L 31/0272-H01L 31/0312 [5]
H01L 31/0328UGR4
. . . .including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L 31/0272-H01L 31/032 [5]
H01L 31/0336UGR5
. . . . .in different semiconductor regions, e.g. Cu2X/CdX hetero-junctions, X being an element of the sixth group of the Periodic System [5]
H01L 31/0352UGR2
. .characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions [5]
H01L 31/036UGR2
. .characterised by their crystalline structure or particular orientation of the crystalline planes [5]
H01L 31/0368UGR3
. . .including polycrystalline semiconductors (H01L 31/0392 takes precedence) [5]
H01L 31/0376UGR3
. . .including amorphous semiconductors (H01L 31/0392 takes precedence) [5]
H01L 31/0384UGR3
. . .including other non-monocrystalline materials, e.g. semiconductor particles embedded in an insulating material (H01L 31/0392 takes precedence) [5]
H01L 31/0392UGR3
. . .including thin films deposited on metallic or insulating substrates [5]
H01L 31/04UGR1
.adapted as conversion devices [2]
H01L 31/042UGR2
. .including a panel or array of photoelectric cells, e.g. solar cells [5]
H01L 31/045UGR3
. . .collapsible or foldable [5]
H01L 31/048UGR3
. . .encapsulated or with housing [5]
H01L 31/05UGR3
. . .characterised by special interconnection means [5]
H01L 31/052UGR3
. . .with cooling, light-reflecting or light- concentrating means [5]
H01L 31/055UGR4
. . . .where light is absorbed and re-emitted at a different wavelength by the concentrator, e.g. by using luminescent material [5]
H01L 31/058UGR3
. . .including means to utilise heat energy, e.g. hybrid systems, or a supplementary source of electric energy (using solar heat in general F24J 2/00) [5]
H01L 31/06UGR2
. .characterised by at least one potential-jump barrier or surface barrier [2]
H01L 31/062UGR3
. . .the potential barriers being only of the metal-insulator-semiconductor type [5]
H01L 31/065UGR3
. . .the potential barriers being only of the graded gap type [5]
H01L 31/068UGR3
. . .the potential barriers being only of the PN homojunction type [5]
H01L 31/07UGR3
. . .the potential barriers being only of the Schottky type [5]
H01L 31/072UGR3
. . .the potential barriers being only of the PN heterojunction type [5]
H01L 31/075UGR3
. . .the potential barriers being only of the PIN type [5]
H01L 31/078UGR3
. . .including potential barriers provided for in two or more of groups H01L 31/062-H01L 31/075 [5]
H01L 31/08UGR1
.in which radiation controls flow of current through the device, e.g. photoresistors [2]
H01L 31/09UGR2
. .Devices sensitive to infra-red, visible or ultra- violet radiation (H01L 31/101 takes precedence) [5]
H01L 31/10UGR2
. .characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors [2]
H01L 31/101UGR3
. . .Devices sensitive to infra-red, visible or ultra-violet radiation [5]
H01L 31/102UGR4
. . . .characterised by only one potential barrier or surface barrier [5]
H01L 31/103UGR5
. . . . .the potential barrier being of the PN homojunction type [5]
H01L 31/105UGR5
. . . . .the potential barrier being of the PIN type [5]
H01L 31/107UGR5
. . . . .the potential barrier working in avalanche mode, e.g. avalanche photodiode [5]
H01L 31/108UGR5
. . . . .the potential barrier being of the Schottky type [5]
H01L 31/109UGR5
. . . . .the potential barrier being of the PN heterojunction type [5]
H01L 31/11UGR4
. . . .characterised by two potential barriers or surface barriers, e.g. bipolar phototransistor [5]
H01L 31/111UGR4
. . . .characterised by at least three potential barriers, e.g. photothyristor [5]
H01L 31/112UGR4
. . . .characterised by field-effect operation, e.g. junction field-effect photo- transistor [5]
H01L 31/113UGR5
. . . . .being of the conductor-insulator- semiconductor type, e.g. metal- insulator-semiconductor field-effect transistor [5]
H01L 31/115UGR3
. . .Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation [5]
H01L 31/117UGR4
. . . .of the bulk effect radiation detector type, e.g. Ge-Li compensated PIN gamma-ray detectors [5]
H01L 31/118UGR4
. . . .of the surface barrier or shallow PN junction detector type, e.g. surface barrier alpha-particle detectors [5]
H01L 31/119UGR4
. . . .characterised by field-effect operation, e.g. MIS type detectors [5]
H01L 31/12UGR1
.structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto (semiconductor devices with at least one potential barrier or surface barrier specially adapted for light emission H01L 33/00; amplifiers using electroluminescent element and photocell H03F 17/00; electroluminescent light sources per seH05B 33/00) [2, 5]
H01L 31/14UGR2
. .the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers, image storage devices [2]
H01L 31/147UGR3
. . .the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier [5]
H01L 31/153UGR4
. . . .formed in, or on, a common substrate [5]
H01L 31/16UGR2
. .the semiconductor device sensitive to radiation being controlled by the light source or sources [2]
H01L 31/167UGR3
. . .the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier [5]
H01L 31/173UGR4
. . . .formed in, or on, a common substrate [5]
H01L 31/18UGR1
.Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof (for manufacture or treatment of semiconductor or solid state devices or of parts thereof in general H01L 21/00) [2]
H01L 31/20UGR2
. .such devices or parts thereof comprising amorphous semiconductor material [5]
H01L 33/00HGRSemiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission, e.g. infra-red; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (H01L 51/50 takes precedence; devices consisting of a plurality of components formed in or on a common substrate H01L 27/00; couplings of light guides with optoelectronic elements G02B 6/42; semiconductor lasers H01S 5/00; electroluminescent light sources per seH05B 33/00) [2, 2006.01]
H01L 35/00HGRThermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00; refrigerating machines using electric or magnetic effects F25B 21/00; measuring temperature based on thermoelectric or thermomagnetic elements G01K 7/00; obtaining energy from radioactive sources G21H) [2]
H01L 35/02UGR1
.Details [2]
H01L 35/04UGR2
. .Structural details of the junction; Connections of leads [2]
H01L 35/06UGR3
. . .detachable, e.g. using a spring [2]
H01L 35/08UGR3
. . .non-detachable, e.g. cemented, sintered, soldered [2]
H01L 35/10UGR3
. . .Connections of leads [2]
H01L 35/12UGR1
.Selection of the material for the legs of the junction [2]
H01L 35/14UGR2
. .using inorganic compositions [2]
H01L 35/16UGR3
. . .comprising tellurium or selenium or sulfur [2]
H01L 35/18UGR3
. . .comprising arsenic or antimony or bismuth (H01L 35/16 takes precedence) [2]
H01L 35/20UGR3
. . .comprising metals only (H01L 35/16, H01L 35/18 take precedence) [2]
H01L 35/22UGR3
. . .comprising compounds containing boron, carbon, oxygen, or nitrogen [2]
H01L 35/24UGR2
. .using organic compositions [2]
H01L 35/26UGR2
. .using compositions changing continuously or discontinuously inside the material [2]
H01L 35/28UGR1
.operating with Peltier or Seebeck effect only [2]
H01L 35/30UGR2
. .characterised by the heat-exchanging means at the junction [2]
H01L 35/32UGR2
. .characterised by the structure or configuration of the cell or thermo-couple forming the device [2]
H01L 35/34UGR1
.Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof (for manufacture or treatment of semiconductor or solid state devices or of parts thereof in general H01L 21/00) [2]
H01L 37/00HGRThermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using Nernst-Ettinghausen effect; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00; measuring temperature based on thermoelectric or thermomagnetic elements G01K 7/00; selection of materials for magnetography, e.g. for Curie-point writing, G03G 5/00) [2]
H01L 37/02UGR1
.using thermal change of dielectric constant, e.g. working above and below the Curie point [2]
H01L 37/04UGR1
.using thermal change of magnetic permeability, e.g. working above and below the Curie point [2]
H01L 39/00HGRDevices using superconductivity or hyperconductivity; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00; superconductors characterised by the ceramic-forming technique or the ceramic composition C04B 35/00; superconductive or hyperconductive conductors, cables, or transmission lines H01B 12/00; superconductive coils or windings H01F; amplifiers using superconductivity H03F 19/00) [2, 4]
H01L 39/02UGR1
.Details [2]
H01L 39/04UGR2
. .Containers; Mountings [2]
H01L 39/06UGR2
. .characterised by the current path [2]
H01L 39/08UGR2
. .characterised by the shape of the element [2]
H01L 39/10UGR2
. .characterised by the means for switching [2]
H01L 39/12UGR2
. .characterised by the material [2]
H01L 39/14UGR1
.Permanent superconductor devices [2]
H01L 39/16UGR1
.Devices switchable between superconductive and normal states [2]
H01L 39/18UGR2
. .Cryotrons [2]
H01L 39/20UGR3
. . .Power cryotrons [2]
H01L 39/22UGR1
.Devices comprising a junction of dissimilar materials, e.g. Josephson-effect devices [2]
H01L 39/24UGR1
.Processes or apparatus specially adapted for the manufacture or treatment of devices provided for in group H01L 39/00 or of parts thereof (for manufacture or treatment of semiconductor or solid state devices or of parts thereof in general H01L 21/00; magnetic separation of superconductive materials from other materials, e.g. using Meissner effect, B03C 1/00) [2]
H01L 41/00HGRPiezo-electric elements in general; Electrostrictive elements in general; Magnetostrictive elements in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00) [2]
H01L 41/02UGR1
.Details [2]
H01L 41/04UGR2
. .of piezo-electric or electrostrictive elements [2]
H01L 41/047UGR3
. . .Electrodes [6]
H01L 41/053UGR3
. . .Mounts, supports, enclosures or casings [6]
H01L 41/06UGR2
. .of magnetostrictive elements [2]
H01L 41/08UGR1
.Piezo-electric or electrostrictive elements [2]
H01L 41/083UGR2
. .having a stacked or multilayer structure [6]
H01L 41/087UGR2
. .formed as coaxial cables [6]
H01L 41/09UGR2
. .with electrical input and mechanical output [5]
H01L 41/107UGR2
. .with electrical input and electrical output [5]
H01L 41/113UGR2
. .with mechanical input and electrical output [5]
H01L 41/12UGR1
.Magnetostrictive elements [2]
H01L 41/16UGR1
.Selection of materials [2]
H01L 41/18UGR2
. .for piezo-electric or electrostrictive elements [2]
H01L 41/187UGR3
. . .Ceramic compositions [5]
H01L 41/193UGR3
. . .Macromolecular compositions [5]
H01L 41/20UGR2
. .for magnetostrictive elements [2]
H01L 41/22UGR1
.Processes or apparatus specially adapted for the manufacture or treatment of these elements or of parts thereof (for manufacture or treatment of semiconductor or solid state devices or of parts thereof in general H01L 21/00) [2]
H01L 41/24UGR2
. .of elements of ceramic composition [5]
H01L 41/26UGR2
. .of elements of macromolecular composition [5]
H01L 43/00HGRDevices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00; devices with potential-jump barrier or surface barrier controllable by variation of a magnetic field H01L 29/82) [2]
H01L 43/02UGR1
.Details [2]
H01L 43/04UGR2
. .of Hall-effect devices [2]
H01L 43/06UGR1
.Hall-effect devices [2]
H01L 43/08UGR1
.Magnetic-field-controlled resistors [2]
H01L 43/10UGR1
.Selection of materials [2]
H01L 43/12UGR1
.Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof (for manufacture or treatment of semiconductor or solid state devices or of parts thereof in general H01L 21/00) [2]
H01L 43/14UGR2
. .for Hall-effect devices [2]
H01L 45/00HGRSolid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00; devices using superconductivity or hyperconductivity H01L 39/00; piezo-electric elements H01L 41/00; bulk negative resistance effect devices H01L 47/00) [2]
H01L 45/02UGR1
.Solid state travelling-wave devices [2]
H01L 47/00HGRBulk negative resistance effect devices, e.g. Gunn-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00) [2]
H01L 47/02UGR1
.Gunn-effect devices [2]
H01L 49/00HGRSolid state devices not provided for in groups H01L 27/00-H01L 47/00 and H01L 51/00 and not provided for in any other subclass; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (devices consisting of a plurality of solid state devices formed in or on a common substrate H01L 27/00) [2, 2006.01]
H01L 49/02UGR1
.Thin-film or thick-film devices [2]
H01L 51/00HGRSolid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof (devices consisting of a plurality of components formed in or on a common substrate H01L 27/28; thermoelectric devices using organic material H01L 35/00, H01L 37/00; piezo-electric, electrostrictive or magnetostrictive elements using organic material H01L 41/00) [6, 2006.01]
H01L 51/05UGR1
.specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier [2006.01]
H01L 51/10UGR2
. .Details of devices [6]
H01L 51/20GEL(transferred to H01L 51/05; H01L 51/42; H01L 51/50)
H01L 51/30UGR2
. .Selection of materials [6]
H01L 51/40UGR2
. .Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof [6, 2006.01]
H01L 51/42UGR1
.specially adapted for sensing infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation; specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation [2006.01]
H01L 51/44UGR2
. .Details of devices [2006.01]
H01L 51/46UGR2
. .Selection of materials [2006.01]
H01L 51/48UGR2
. .Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof [2006.01]
H01L 51/50UGR1
.specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED) (organic semiconductor lasers H01S 5/36) [2006.01]
H01L 51/52UGR2
. .Details of devices [2006.01]
H01L 51/54UGR2
. .Selection of materials (organic luminescent materials C09K 11/06) [2006.01]
H01L 51/56UGR2
. .Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof [2006.01]