IPC-Stelle: C30B 11/04 [Version 7 (gültig ab 01.2000)]

SymbolTypTitel
CSKCHEMISTRY; METALLURGY
C30KLCRYSTAL GROWTH (separation by crystallisation in general B01D 9/00) [3]
C30BUKLSINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds B01J 3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D , C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H01L); APPARATUS THEREFOR [3]
C30B 1/00ZWSingle-crystal growth from solids or gels [3]
C30B 1/00HGRSingle-crystal growth directly from the solid state (unidirectional demixing of eutectoid materials C30B 3/00; under a protective fluid C30B 27/00) [3]
C30B 1/02UGR1
.by thermal treatment, e.g. strain annealing (C30B 1/12 takes precedence) [3]
C30B 1/04UGR2
. .Isothermal recrystallisation [3]
C30B 1/06UGR2
. .Recrystallisation under a temperature gradient [3]
C30B 1/08UGR3
. . .Zone recrystallisation [3]
C30B 1/10UGR1
.by solid state reactions or multi-phase diffusion [3]
C30B 1/12UGR1
.by pressure treatment during the growth [3]
C30B 3/00HGRUnidirectional demixing of eutectoid materials [3]
C30B 5/00HGRSingle-crystal growth from gels (under a protective fluid C30B 27/00) [3]
C30B 5/02UGR1
.with addition of doping materials [3]
C30B 7/00ZWSingle-crystal growth from liquids; Unidirectional solidification of eutectic materials [3]
C30B 7/00HGRSingle-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions (from molten solvents C30B 9/00; by normal or gradient freezing C30B 11/00; under a protective fluid C30B 27/00) [3]
C30B 7/02UGR1
.by evaporation of the solvent [3]
C30B 7/04UGR2
. .using aqueous solvents [3]
C30B 7/06UGR2
. .using non-aqueous solvents [3]
C30B 7/08UGR1
.by cooling of the solution [3]
C30B 7/10UGR1
.by application of pressure, e.g. hydrothermal processes [3]
C30B 7/12UGR1
.by electrolysis [3]
C30B 7/14UGR1
.the crystallising materials being formed by chemical reactions in the solution [3]
C30B 9/00HGRSingle-crystal growth from melt solutions using molten solvents (by normal or gradient freezing C30B 11/00; by zone-melting C30B 13/00; by crystal pulling C30B 15/00; on immersed seed crystal C30B 17/00; by liquid phase epitaxial growth C30B 19/00; under a protective fluid C30B 27/00) [3]
C30B 9/02UGR1
.by evaporation of the molten solvent [3]
C30B 9/04UGR1
.by cooling of the solution [3]
C30B 9/06UGR2
. .using as solvent a component of the crystal composition [3]
C30B 9/08UGR2
. .using other solvents [3]
C30B 9/10UGR3
. . .Metal solvents [3]
C30B 9/12UGR3
. . .Salt solvents, e.g. flux growth [3]
C30B 9/14UGR1
.by electrolysis [3]
C30B 11/00HGRSingle-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method (C30B 13/00 , C30B 15/00 , C30B 17/00 , C30B 19/00 take precedence; under a protective fluid C30B 27/00) [3]
C30B 11/02UGR1
.without using solvents (C30B 11/06 takes precedence) [3]
C30B 11/04UGR1
.adding crystallising materials or reactants forming it in situ to the melt [3]
C30B 11/06UGR2
. .at least one but not all components of the crystal composition being added [3]
C30B 11/08UGR2
. .every component of the crystal composition being added during the crystallisation [3]
C30B 11/10UGR3
. . .Solid or liquid components, e.g. Verneuil method [3]
C30B 11/12UGR3
. . .Vaporous components, e.g. vapour-liquid-solid-growth [3]
C30B 11/14UGR1
.characterised by the seed, e.g. its crystallographic orientation [3]
C30B 13/00HGRSingle-crystal growth by zone-melting; Refining by zone-melting (C30B 17/00 takes precedence; by changing the cross-section of the treated solid C30B 15/00; under a protective fluid C30B 27/00; for the growth of homogeneous polycrystalline material with defined structure C30B 28/00; zone-refining of specific materials, see the relevant subclasses for the materials) [3, 5]
C30B 13/02UGR1
.Zone-melting with a solvent, e.g. travelling solvent process [3]
C30B 13/04UGR1
.Homogenisation by zone-levelling [3]
C30B 13/06UGR1
.the molten zone not extending over the whole cross-section [3]
C30B 13/08UGR1
.adding crystallising materials or reactants forming it in situ to the molten zone [3]
C30B 13/10UGR2
. .with addition of doping materials [3]
C30B 13/12UGR3
. . .in the gaseous or vapour state [3]
C30B 13/14UGR1
.Crucibles or vessels [3]
C30B 13/16UGR1
.Heating of the molten zone [3]
C30B 13/18UGR2
. .the heating element being in contact with, or immersed in, the molten zone [3]
C30B 13/20UGR2
. .by induction, e.g. hot wire technique (C30B 13/18 takes precedence; induction coils H05B 6/36) [3]
C30B 13/22UGR2
. .by irradiation or electric discharge [3]
C30B 13/24UGR3
. . .using electromagnetic waves [3]
C30B 13/26UGR1
.Stirring of the molten zone [3]
C30B 13/28UGR1
.Controlling or regulating (controlling or regulating in general G05) [3]
C30B 13/30UGR2
. .Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal [3]
C30B 13/32UGR1
.Mechanisms for moving either the charge or the heater [3]
C30B 13/34UGR1
.characterised by the seed, e.g. by its crystallographic orientation [3]
C30B 15/00HGRSingle-crystal growth by pulling from a melt, e.g. Czochralski method (under a protective fluid C30B 27/00) [3]
C30B 15/02UGR1
.adding crystallising materials or reactants forming it in situ to the melt [3]
C30B 15/04UGR2
. .adding doping materials, e.g. for n-p-junction [3]
C30B 15/06UGR1
.Non-vertical pulling [3]
C30B 15/08UGR1
.Downward pulling [3]
C30B 15/10UGR1
.Crucibles or containers for supporting the melt [3]
C30B 15/12UGR2
. .Double crucible methods [3]
C30B 15/14UGR1
.Heating of the melt or the crystallised materials [3]
C30B 15/16UGR2
. .by irradiation or electric discharge [3]
C30B 15/18UGR2
. .using direct resistance heating in addition to other methods of heating, e.g. using Peltier heat [3]
C30B 15/20UGR1
.Controlling or regulating (controlling or regulating in general G05) [3]
C30B 15/22UGR2
. .Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal [3]
C30B 15/24UGR3
. . .using mechanical means, e.g. shaping guides (shaping dies for edge-defined film-fed crystal growth C30B 15/34) [3]
C30B 15/26UGR3
. . .using television detectors; using photo or X-ray detectors [3]
C30B 15/28UGR3
. . .using weight changes of the crystal or the melt, e.g. flotation methods [3]
C30B 15/30UGR1
.Mechanisms for rotating or moving either the melt or the crystal (flotation methods C30B 15/28) [3]
C30B 15/32UGR1
.Seed holders, e.g. chucks [3]
C30B 15/34UGR1
.Edge-defined film-fed crystal growth using dies or slits [3]
C30B 15/36UGR1
.characterised by the seed, e.g. its crystallographic orientation [3]
C30B 17/00HGRSingle-crystal growth on to a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method (C30B 15/00 takes precedence) [3]
C30B 19/00HGRLiquid-phase epitaxial-layer growth [3]
C30B 19/02UGR1
.using molten solvents, e.g. flux [3]
C30B 19/04UGR2
. .the solvent being a component of the crystal composition [3]
C30B 19/06UGR1
.Reaction chambers; Boats for supporting the melt; Substrate holders [3]
C30B 19/08UGR1
.Heating of the reaction chamber or the substrate [3]
C30B 19/10UGR1
.Controlling or regulating (controlling or regulating in general G05) [3]
C30B 19/12UGR1
.characterised by the substrate [3]
C30B 21/00HGRUnidirectional solidification of eutectic materials [3]
C30B 21/02UGR1
.by normal casting or gradient freezing [3]
C30B 21/04UGR1
.by zone-melting [3]
C30B 21/06UGR1
.by pulling from a melt [3]
C30B 23/00ZWSingle-crystal growth from vapours [3]
C30B 23/00HGRSingle-crystal growth by condensing evaporated or sublimed materials [3]
C30B 23/02UGR1
.Epitaxial-layer growth [3]
C30B 23/04UGR2
. .Pattern deposit, e.g. by using masks [3]
C30B 23/06UGR2
. .Heating of the deposition chamber, the substrate, or the materials to be evaporated [3]
C30B 23/08UGR2
. .by condensing ionised vapours (by reactive sputtering C30B 25/06) [3]
C30B 25/00HGRSingle-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth [3]
C30B 25/02UGR1
.Epitaxial-layer growth [3]
C30B 25/04UGR2
. .Pattern deposit, e.g. by using masks [3]
C30B 25/06UGR2
. .by reactive sputtering [3]
C30B 25/08UGR2
. .Reaction chambers; Selection of materials therefor [3]
C30B 25/10UGR2
. .Heating of the reaction chamber or the substrate [3]
C30B 25/12UGR2
. .Substrate holders or susceptors [3]
C30B 25/14UGR2
. .Feed and outlet means for the gases; Modifying the flow of the reactive gases [3]
C30B 25/16UGR2
. .Controlling or regulating (controlling or regulating in general G05) [3]
C30B 25/18UGR2
. .characterised by the substrate [3]
C30B 25/20UGR3
. . .the substrate being of the same materials as the epitaxial layer [3]
C30B 25/22UGR2
. .Sandwich processes [3]
C30B 27/00ZWE
C30B 27/00HGRSingle-crystal growth under a protective fluid [3]
C30B 27/02UGR1
.by pulling from a melt [3]
C30B 28/00HGRProduction of homogeneous polycrystalline material with defined structure [5]
C30B 28/02UGR1
.directly from the solid state [5]
C30B 28/04UGR1
.from liquids [5]
C30B 28/06UGR2
. .by normal freezing or freezing under temperature gradient [5]
C30B 28/08UGR2
. .by zone-melting [5]
C30B 28/10UGR2
. .by pulling from a melt [5]
C30B 28/12UGR1
.directly from the gas state [5]
C30B 28/14UGR2
. .by chemical reaction of reactive gases [5]
C30B 29/00HGRSingle crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (alloys C22C) [3, 5]
C30B 29/02UGR1
.Elements [3]
C30B 29/04UGR2
. .Diamond [3]
C30B 29/06UGR2
. .Silicon [3]
C30B 29/08UGR2
. .Germanium [3]
C30B 29/10UGR1
.Inorganic compounds or compositions [3]
C30B 29/12UGR2
. .Halides [3]
C30B 29/14UGR2
. .Phosphates [3]
C30B 29/16UGR2
. .Oxides [3]
C30B 29/18UGR3
. . .Quartz [3]
C30B 29/20UGR3
. . .Aluminium oxides [3]
C30B 29/22UGR3
. . .Complex oxides [3]
C30B 29/24UGR4
. . . .with formula AMeO_3_, wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co, or Al, e.g. ortho ferrites [3]
C30B 29/26UGR4
. . . .with formula BMe_2_O_4_, wherein B is Mg, Ni, Co, Al, Zn or Cd and Me is Fe, Ga, Sc, Cr, Co, or Al [3]
C30B 29/28UGR4
. . . .with formula A_3_Me_5_O_12_, wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets [3]
C30B 29/30UGR4
. . . .Niobates; Vanadates; Tantalates [3]
C30B 29/32UGR4
. . . .Titanates; Germanates; Molybdates; Tungstates [3]
C30B 29/34UGR2
. .Silicates [3]
C30B 29/36UGR2
. .Carbides [3]
C30B 29/38UGR2
. .Nitrides [3]
C30B 29/40UGR2
. .A_III_B_V_ compounds [3]
C30B 29/42UGR3
. . .Gallium arsenide [3]
C30B 29/44UGR3
. . .Gallium phosphide [3]
C30B 29/46UGR2
. .Sulfur-, selenium- or tellurium-containing compounds [3]
C30B 29/48UGR3
. . .A_II_B_VI_ compounds [3]
C30B 29/50UGR4
. . . .Cadmium sulfide [3]
C30B 29/52UGR2
. .Alloys [3]
C30B 29/54UGR1
.Organic compounds [3]
C30B 29/56UGR2
. .Tartrates [3]
C30B 29/58UGR2
. .Macromolecular compounds [3]
C30B 29/60UGR1
.characterised by shape [3]
C30B 29/62UGR2
. .Whiskers or needles [3]
C30B 29/64UGR2
. .Flat crystals, e.g. plates, strips, disks [5]
C30B 29/66UGR2
. .Crystals of complex geometrical shape, e.g. tubes, cylinders [5]
C30B 29/68UGR2
. .Crystals with laminate structure, e.g. "superlattices" [5]
C30B 30/00HGRProduction of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions [5]
C30B 30/02UGR1
.using electric fields, e.g. electrolysis [5]
C30B 30/04UGR1
.using magnetic fields [5]
C30B 30/06UGR1
.using mechanical vibrations [5]
C30B 30/08UGR1
.in conditions of zero-gravity or low gravity [5]
C30B 31/00ZWAfter-treatment of single crystals or homogeneous polycrystalline material with defined structure [3, 5]
C30B 31/00HGRDiffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor [3, 5]
C30B 31/02UGR1
.by contacting with diffusion materials in the solid state [3]
C30B 31/04UGR1
.by contacting with diffusion materials in the liquid state [3]
C30B 31/06UGR1
.by contacting with diffusion material in the gaseous state (C30B 31/18 takes precedence) [3]
C30B 31/08UGR2
. .the diffusion materials being a compound of the elements to be diffused [3]
C30B 31/10UGR2
. .Reaction chambers; Selection of materials therefor [3]
C30B 31/12UGR2
. .Heating of the reaction chamber [3]
C30B 31/14UGR2
. .Substrate holders or susceptors [3]
C30B 31/16UGR2
. .Feed and outlet means for the gases; Modifying the flow of the gases [3]
C30B 31/18UGR2
. .Controlling or regulating (controlling or regulating in general G05) [3]
C30B 31/20UGR1
.Doping by irradiation with electromagnetic waves or by particle radiation [3]
C30B 31/22UGR2
. .by ion-implantation [3]
C30B 33/00HGRAfter-treatment of single crystals or homogeneous polycrystalline material with defined structure (C30B 31/00 takes precedence; grinding, polishing B24; mechanical fine working of gems, jewels, crystals B28D 5/00) [3, 5]
C30B 33/02UGR1
.Heat treatment (C30B 33/04 , C30B 33/06 take precedence) [5]
C30B 33/04UGR1
.using electric or magnetic fields or particle radiation [5]
C30B 33/06UGR1
.Joining of crystals [5]
C30B 33/08UGR1
.Etching [5]
C30B 33/10UGR2
. .in solutions or melts [5]
C30B 33/12UGR2
. .in gas atmosphere or plasma [5]
C30B 35/00ZWE
C30B 35/00HGRApparatus in general, specially adapted for the growth, production or after-treatment of single crystals or a homogeneous polycrystalline material with defined structure [3, 5]