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IPC-Stelle: H10N 52/00 Hauptgruppe [Version 2024.01 (aktuell), Sprache EN - English]

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DEKLA-Gruppen

Symbol		Titel
A Hierarchieinformationen		HUMAN NECESSITIES
B Hierarchieinformationen		PERFORMING OPERATIONS; TRANSPORTING
C Hierarchieinformationen		CHEMISTRY; METALLURGY
D Hierarchieinformationen		TEXTILES; PAPER
E Hierarchieinformationen		FIXED CONSTRUCTIONS
F Hierarchieinformationen		MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
G Hierarchieinformationen		PHYSICS
H Hierarchieinformationen		ELECTRICITY
H01 Hierarchieinformationen		ELECTRIC ELEMENTS
H02 Hierarchieinformationen		GENERATION, CONVERSION, OR DISTRIBUTION OF ELECTRIC POWER
H03 Hierarchieinformationen		ELECTRONIC CIRCUITRY
H04 Hierarchieinformationen		ELECTRIC COMMUNICATION TECHNIQUE
H05 Hierarchieinformationen		ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
H10 Hierarchieinformationen		SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR [2023.01]
H10B Hierarchieinformationen		ELECTRONIC MEMORY DEVICES [2023.01]
H10K Hierarchieinformationen		ORGANIC ELECTRIC SOLID-STATE DEVICES [2023.01]
H10N Hierarchieinformationen		ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR [2023.01]
H10N 10/00		Thermoelectric or thermomagnetic devices [2023.01]
H10N 10/00 Hierarchieinformationen		Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects (integrated devices or assemblies of multiple devices H10N 19/00) [2023.01]
H10N 15/00 Hierarchieinformationen		Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect (integrated devices or assemblies of multiple devices H10N 19/00) [2023.01]
H10N 19/00 Hierarchieinformationen		Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N 10/00-H10N 15/00 [2023.01]
H10N 30/00		Piezoelectric, electrostrictive or magnetostrictive devices [2023.01]
H10N 30/00 Hierarchieinformationen		Piezoelectric or electrostrictive devices (integrated devices or assemblies of multiple devices H10N 39/00) [2023.01]
H10N 35/00 Hierarchieinformationen		Magnetostrictive devices (integrated devices or assemblies of multiple devices H10N 39/00) [2023.01]
H10N 39/00 Hierarchieinformationen		Integrated devices, or assemblies of multiple devices, comprising at least one piezoelectric, electrostrictive or magnetostrictive element covered by groups H10N 30/00-H10N 35/00 [2023.01]
H10N 50/00		Galvanomagnetic or similar magnetic-effect devices [2023.01]
H10N 50/00 Hierarchieinformationen		Galvanomagnetic devices (Hall-effect devices H10N 52/00; integrated devices or assemblies of multiple devices H10N 59/00) [2023.01]
H10N 52/00 Hierarchieinformationen		Hall-effect devices (integrated devices or assemblies of multiple devices H10N 59/00) [2023.01]
H10N 52/01 Hierarchieinformationen		. Manufacture or treatment [2023.01]
H10N 52/80 Hierarchieinformationen		. Constructional details [2023.01]
H10N 52/85 Hierarchieinformationen		. . Magnetic active materials [2023.01]
H10N 59/00 Hierarchieinformationen		Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N 50/00-H10N 52/00 (MRAM devices H10B 61/00) [2023.01]
H10N 60/00		Superconducting devices [2023.01]
H10N 60/00 Hierarchieinformationen		Superconducting devices (integrated devices or assemblies of multiple devices H10N 69/00) [2023.01]
H10N 69/00 Hierarchieinformationen		Integrated devices, or assemblies of multiple devices, comprising at least one superconducting element covered by group H10N 60/00 [2023.01]
H10N 70/00		Other electric solid-state devices [2023.01]
H10N 70/00 Hierarchieinformationen		Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching (integrated devices or assemblies of multiple devices H10N 79/00) [2023.01]
H10N 79/00 Hierarchieinformationen		Integrated devices, or assemblies of multiple devices, comprising at least one solid-state element covered by group H10N 70/00 (ReRAM devices H10B 63/00; PCRAM devices H10B 63/10) [2023.01]
H10N 80/00 Hierarchieinformationen		Bulk negative-resistance effect devices (integrated devices or assemblies of multiple devices H10N 89/00) [2023.01]
H10N 89/00 Hierarchieinformationen		Integrated devices, or assemblies of multiple devices, comprising at least one bulk negative resistance effect element covered by group H10N 80/00 [2023.01]
H10N 97/00 Hierarchieinformationen		Electric solid-state thin-film or thick-film devices, not otherwise provided for [2023.01]
H10N 99/00
H10N 99/00 Hierarchieinformationen		Subject matter not provided for in other groups of this subclass [2023.01]
H99 Hierarchieinformationen		SUBJECT MATTER NOT OTHERWISE PROVIDED FOR IN THIS SECTION [2006.01]

Zu vergleichende IPC-Stelle: Es wurden im Verzeichnis noch keine IPC-Stellen für die Vergleichsansicht vorgemerkt. [Version , Sprache ]