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Symbol IPC-Stellen auswählen Titel
A
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HUMAN NECESSITIES
B
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PERFORMING OPERATIONSTRANSPORTING
C
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CHEMISTRYMETALLURGY
D
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TEXTILESPAPER
E
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FIXED CONSTRUCTIONS
F
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MECHANICAL ENGINEERINGLIGHTINGHEATINGWEAPONSBLASTING
G
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PHYSICS
H
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ELECTRICITY
H01
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ELECTRIC ELEMENTS
H02
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GENERATION, CONVERSION, OR DISTRIBUTION OF ELECTRIC POWER
H03
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ELECTRONIC CIRCUITRY
H04
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ELECTRIC COMMUNICATION TECHNIQUE
H05
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ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
H10
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SEMICONDUCTOR DEVICESELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR [2023.01]
H10B
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ELECTRONIC MEMORY DEVICES [2023.01]
H10K
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ORGANIC ELECTRIC SOLID-STATE DEVICES [2023.01]
H10N
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ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR [2023.01]
H10N 10/00
Thermoelectric or thermomagnetic devices [2023.01]
H10N 10/00
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Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects (integrated devices or assemblies of multiple devices H10N 19/00) [2023.01]
H10N 15/00
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Thermoelectric devices without a junction of dissimilar materialsThermomagnetic devices, e.g. using the Nernst-Ettingshausen effect (integrated devices or assemblies of multiple devices H10N 19/00) [2023.01]
H10N 19/00
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Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N 10/00-H10N 15/00 [2023.01]
H10N 30/00
Piezoelectric, electrostrictive or magnetostrictive devices [2023.01]
H10N 30/00
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Piezoelectric or electrostrictive devices (integrated devices or assemblies of multiple devices H10N 39/00) [2023.01]
H10N 30/01
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Manufacture or treatment [2023.01]
H10N 30/02
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. . Forming enclosures or casings [2023.01]
H10N 30/03
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. . Assembling devices that include piezoelectric or electrostrictive parts [2023.01]
H10N 30/04
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. . Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning [2023.01]
H10N 30/045
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. . . by polarising [2023.01]
H10N 30/05
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. . Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes [2023.01]
H10N 30/053
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. . . by integrally sintering piezoelectric or electrostrictive bodies and electrodes [2023.01]
H10N 30/057
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. . . by stacking bulk piezoelectric or electrostrictive bodies and electrodes [2023.01]
H10N 30/06
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. . Forming electrodes or interconnections, e.g. leads or terminals [2023.01]
H10N 30/063
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. . . Forming interconnections, e.g. connection electrodes of multilayered piezoelectric or electrostrictive parts [2023.01]
H10N 30/067
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. . . Forming single-layered electrodes of multilayered piezoelectric or electrostrictive parts [2023.01]
H10N 30/07
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. . Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base [2023.01]
H10N 30/071
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. . . Mounting of piezoelectric or electrostrictive parts together with semiconductor elements, or other circuit elements, on a common substrate [2023.01]
H10N 30/072
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. . . by laminating or bonding of piezoelectric or electrostrictive bodies [2023.01]
H10N 30/073
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. . . . by fusion of metals or by adhesives [2023.01]
H10N 30/074
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. . . by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing [2023.01]
H10N 30/076
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. . . . by vapour phase deposition [2023.01]
H10N 30/077
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. . . . by liquid phase deposition [2023.01]
H10N 30/078
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. . . . . by sol-gel deposition [2023.01]
H10N 30/079
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. . . . using intermediate layers, e.g. for growth control [2023.01]
H10N 30/08
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. . Shaping or machining of piezoelectric or electrostrictive bodies [2023.01]
H10N 30/081
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. . . by coating or depositing using masks, e.g. lift-off [2023.01]
H10N 30/082
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. . . by etching, e.g. lithography [2023.01]
H10N 30/084
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. . . by moulding or extrusion [2023.01]
H10N 30/085
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. . . by machining [2023.01]
H10N 30/086
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. . . . by polishing or grinding [2023.01]
H10N 30/088
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. . . . by cutting or dicing [2023.01]
H10N 30/089
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. . . . by punching [2023.01]
H10N 30/09
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. . Forming piezoelectric or electrostrictive materials [2023.01]
H10N 30/092
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. . . Forming composite materials [2023.01]
H10N 30/093
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. . . Forming inorganic materials [2023.01]
H10N 30/095
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. . . . by melting [2023.01]
H10N 30/097
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. . . . by sintering [2023.01]
H10N 30/098
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. . . Forming organic materials [2023.01]
H10N 30/20
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with electrical input and mechanical output, e.g. functioning as actuators or vibrators [2023.01]
H10N 30/30
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with mechanical input and electrical output, e.g. functioning as generators or sensors [2023.01]
H10N 30/40
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with electrical input and electrical output, e.g. functioning as transformers [2023.01]
H10N 30/50
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having a stacked or multilayer structure [2023.01]
H10N 30/60
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having a coaxial cable structure [2023.01]
H10N 30/80
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Constructional details [2023.01]
H10N 30/85
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. . Piezoelectric or electrostrictive active materials [2023.01]
H10N 30/853
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. . . Ceramic compositions [2023.01]
H10N 30/857
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. . . Macromolecular compositions [2023.01]
H10N 30/87
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. . Electrodes or interconnections, e.g. leads or terminals [2023.01]
H10N 30/88
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. . MountsSupportsEnclosuresCasings [2023.01]
H10N 35/00
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Magnetostrictive devices (integrated devices or assemblies of multiple devices H10N 39/00) [2023.01]
H10N 39/00
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Integrated devices, or assemblies of multiple devices, comprising at least one piezoelectric, electrostrictive or magnetostrictive element covered by groups H10N 30/00-H10N 35/00 [2023.01]
H10N 50/00
Galvanomagnetic or similar magnetic-effect devices [2023.01]
H10N 50/00
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Galvanomagnetic devices (Hall-effect devices H10N 52/00; integrated devices or assemblies of multiple devices H10N 59/00) [2023.01]
H10N 52/00
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Hall-effect devices (integrated devices or assemblies of multiple devices H10N 59/00) [2023.01]
H10N 59/00
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Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N 50/00-H10N 52/00 (MRAM devices H10B 61/00) [2023.01]
H10N 60/00
Superconducting devices [2023.01]
H10N 60/00
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Superconducting devices (integrated devices or assemblies of multiple devices H10N 69/00) [2023.01]
H10N 69/00
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Integrated devices, or assemblies of multiple devices, comprising at least one superconducting element covered by group H10N 60/00 [2023.01]
H10N 70/00
Other electric solid-state devices [2023.01]
H10N 70/00
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Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching (integrated devices or assemblies of multiple devices H10N 79/00) [2023.01]
H10N 79/00
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Integrated devices, or assemblies of multiple devices, comprising at least one solid-state element covered by group H10N 70/00 (ReRAM devices H10B 63/00;  PCRAM devices H10B 63/10) [2023.01]
H10N 80/00
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Bulk negative-resistance effect devices (integrated devices or assemblies of multiple devices H10N 89/00) [2023.01]
H10N 89/00
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Integrated devices, or assemblies of multiple devices, comprising at least one bulk negative resistance effect element covered by group H10N 80/00 [2023.01]
H10N 97/00
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Electric solid-state thin-film or thick-film devices, not otherwise provided for [2023.01]
H10N 99/00

H10N 99/00
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Subject matter not provided for in other groups of this subclass [2023.01]
H99
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SUBJECT MATTER NOT OTHERWISE PROVIDED FOR IN THIS SECTION [2006.01]

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