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Symbol IPC-Stellen auswählen Titel
A
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HUMAN NECESSITIES
B
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PERFORMING OPERATIONSTRANSPORTING
C
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CHEMISTRYMETALLURGY
D
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TEXTILESPAPER
E
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FIXED CONSTRUCTIONS
F
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MECHANICAL ENGINEERINGLIGHTINGHEATINGWEAPONSBLASTING
G
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PHYSICS
H
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ELECTRICITY
H01
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ELECTRIC ELEMENTS
H02
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GENERATION, CONVERSION, OR DISTRIBUTION OF ELECTRIC POWER
H03
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ELECTRONIC CIRCUITRY
H04
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ELECTRIC COMMUNICATION TECHNIQUE
H05
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ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
H10
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SEMICONDUCTOR DEVICESELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR [2023.01]
H10B
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ELECTRONIC MEMORY DEVICES [2023.01]
H10K
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ORGANIC ELECTRIC SOLID-STATE DEVICES [2023.01]
H10N
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ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR [2023.01]
H10N 10/00
Thermoelectric or thermomagnetic devices [2023.01]
H10N 10/00
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Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects (integrated devices or assemblies of multiple devices H10N 19/00) [2023.01]
H10N 10/01
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Manufacture or treatment [2023.01]
H10N 10/10
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operating with only the Peltier or Seebeck effects [2023.01]
H10N 10/13
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. . characterised by the heat-exchanging means at the junction [2023.01]
H10N 10/17
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. . characterised by the structure or configuration of the cell or thermocouple forming the device [2023.01]
H10N 10/80
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Constructional details [2023.01]
H10N 10/81
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. . Structural details of the junction [2023.01]
H10N 10/813
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. . . the junction being separable, e.g. using a spring [2023.01]
H10N 10/817
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. . . the junction being non- separable, e.g. being cemented, sintered or soldered [2023.01]
H10N 10/82
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. . Connection of interconnections [2023.01]
H10N 10/85
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. . Thermoelectric active materials [2023.01]
H10N 10/851
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. . . comprising inorganic compositions [2023.01]
H10N 10/852
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. . . . comprising tellurium, selenium or sulfur [2023.01]
H10N 10/853
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. . . . comprising arsenic, antimony or bismuth (H10N 10/852 takes precedence) [2023.01]
H10N 10/854
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. . . . comprising only metals (H10N 10/852, H10N 10/853 take precedence) [2023.01]
H10N 10/855
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. . . . comprising compounds containing boron, carbon, oxygen or nitrogen [2023.01]
H10N 10/856
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. . . comprising organic compositions [2023.01]
H10N 10/857
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. . . comprising compositions changing continuously or discontinuously inside the material [2023.01]
H10N 15/00
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Thermoelectric devices without a junction of dissimilar materialsThermomagnetic devices, e.g. using the Nernst-Ettingshausen effect (integrated devices or assemblies of multiple devices H10N 19/00) [2023.01]
H10N 19/00
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Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N 10/00-H10N 15/00 [2023.01]
H10N 30/00
Piezoelectric, electrostrictive or magnetostrictive devices [2023.01]
H10N 30/00
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Piezoelectric or electrostrictive devices (integrated devices or assemblies of multiple devices H10N 39/00) [2023.01]
H10N 35/00
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Magnetostrictive devices (integrated devices or assemblies of multiple devices H10N 39/00) [2023.01]
H10N 39/00
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Integrated devices, or assemblies of multiple devices, comprising at least one piezoelectric, electrostrictive or magnetostrictive element covered by groups H10N 30/00-H10N 35/00 [2023.01]
H10N 50/00
Galvanomagnetic or similar magnetic-effect devices [2023.01]
H10N 50/00
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Galvanomagnetic devices (Hall-effect devices H10N 52/00; integrated devices or assemblies of multiple devices H10N 59/00) [2023.01]
H10N 52/00
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Hall-effect devices (integrated devices or assemblies of multiple devices H10N 59/00) [2023.01]
H10N 59/00
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Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N 50/00-H10N 52/00 (MRAM devices H10B 61/00) [2023.01]
H10N 60/00
Superconducting devices [2023.01]
H10N 60/00
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Superconducting devices (integrated devices or assemblies of multiple devices H10N 69/00) [2023.01]
H10N 69/00
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Integrated devices, or assemblies of multiple devices, comprising at least one superconducting element covered by group H10N 60/00 [2023.01]
H10N 70/00
Other electric solid-state devices [2023.01]
H10N 70/00
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Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching (integrated devices or assemblies of multiple devices H10N 79/00) [2023.01]
H10N 79/00
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Integrated devices, or assemblies of multiple devices, comprising at least one solid-state element covered by group H10N 70/00 (ReRAM devices H10B 63/00;  PCRAM devices H10B 63/10) [2023.01]
H10N 80/00
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Bulk negative-resistance effect devices (integrated devices or assemblies of multiple devices H10N 89/00) [2023.01]
H10N 89/00
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Integrated devices, or assemblies of multiple devices, comprising at least one bulk negative resistance effect element covered by group H10N 80/00 [2023.01]
H10N 97/00
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Electric solid-state thin-film or thick-film devices, not otherwise provided for [2023.01]
H10N 99/00

H10N 99/00
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Subject matter not provided for in other groups of this subclass [2023.01]
H99
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SUBJECT MATTER NOT OTHERWISE PROVIDED FOR IN THIS SECTION [2006.01]

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