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Symbol IPC-Stellen auswählen Titel
A
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HUMAN NECESSITIES
B
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PERFORMING OPERATIONSTRANSPORTING
C
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CHEMISTRYMETALLURGY
D
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TEXTILESPAPER
E
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FIXED CONSTRUCTIONS
F
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MECHANICAL ENGINEERINGLIGHTINGHEATINGWEAPONSBLASTING
G
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PHYSICS
H
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ELECTRICITY
H01
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ELECTRIC ELEMENTS
H02
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GENERATION, CONVERSION, OR DISTRIBUTION OF ELECTRIC POWER
H03
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ELECTRONIC CIRCUITRY
H04
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ELECTRIC COMMUNICATION TECHNIQUE
H05
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ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
H10
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SEMICONDUCTOR DEVICESELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR [2023.01]
H10B
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ELECTRONIC MEMORY DEVICES [2023.01]
H10D
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INORGANIC ELECTRIC SEMICONDUCTOR DEVICES [2025.01]
H10F
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INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION [2025.01]
H10H
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INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS [2025.01]
H10H 20/00
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Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED] [2025.01]
H10H 20/01
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Manufacture or treatment [2025.01]
H10H 20/80
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Constructional details [2025.01]
H10H 20/81
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. . Bodies [2025.01]
H10H 20/811
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. . . having quantum effect structures or superlattices, e.g. tunnel junctions [2025.01]
H10H 20/812
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. . . . within the light-emitting regions, e.g. having quantum confinement structures [2025.01]
H10H 20/813
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. . . having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies [2025.01]
H10H 20/814
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. . . having reflecting means, e.g. semiconductor Bragg reflectors [2025.01]
H10H 20/815
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. . . having stress relaxation structures, e.g. buffer layers [2025.01]
H10H 20/816
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. . . having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures [2025.01]
H10H 20/817
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. . . characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous [2025.01]
H10H 20/818
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. . . . within the light-emitting regions [2025.01]
H10H 20/819
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. . . characterised by their shape, e.g. curved or truncated substrates [2025.01]
H10H 20/82
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. . . . Roughened surfaces, e.g. at the interface between epitaxial layers [2025.01]
H10H 20/821
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. . . . of the light-emitting regions, e.g. non-planar junctions [2025.01]
H10H 20/822
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. . . Materials of the light-emitting regions [2025.01]
H10H 20/823
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. . . . comprising only Group II-VI materials, e.g. ZnO [2025.01]
H10H 20/824
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. . . . comprising only Group III-V materials, e.g. GaP [2025.01]
H10H 20/825
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. . . . . containing nitrogen, e.g. GaN [2025.01]
H10H 20/826
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. . . . comprising only Group IV materials [2025.01]
H10H 20/83
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. . Electrodes [2025.01]
H10H 20/831
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. . . characterised by their shape [2025.01]
H10H 20/832
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. . . characterised by their material [2025.01]
H10H 20/833
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. . . . Transparent materials [2025.01]
H10H 20/84
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. . Coatings, e.g. passivation layers or antireflective coatings [2025.01]
H10H 20/841
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. . . Reflective coatings, e.g. dielectric Bragg reflectors [2025.01]
H10H 20/85
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. . Packages [2025.01]
H10H 20/851
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. . . Wavelength conversion means [2025.01]
H10H 20/852
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. . . Encapsulations [2025.01]
H10H 20/853
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. . . . characterised by their shape [2025.01]
H10H 20/854
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. . . . characterised by their material, e.g. epoxy or silicone resins [2025.01]
H10H 20/855
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. . . Optical field-shaping means, e.g. lenses [2025.01]
H10H 20/856
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. . . . Reflecting means [2025.01]
H10H 20/857
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. . . Interconnections, e.g. lead-frames, bond wires or solder balls [2025.01]
H10H 20/858
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. . . Means for heat extraction or cooling [2025.01]
H10H 29/00
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Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H 20/00 [2025.01]
H10H 99/00
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Subject matter not provided for in other groups of this subclass [2025.01]
H10K
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ORGANIC ELECTRIC SOLID-STATE DEVICES [2023.01]
H10N
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ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR [2023.01]
H99
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SUBJECT MATTER NOT OTHERWISE PROVIDED FOR IN THIS SECTION [2006.01]

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