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Symbol IPC-Stellen auswählen Titel
A
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HUMAN NECESSITIES
B
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PERFORMING OPERATIONSTRANSPORTING
C
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CHEMISTRYMETALLURGY
D
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TEXTILESPAPER
E
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FIXED CONSTRUCTIONS
F
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MECHANICAL ENGINEERINGLIGHTINGHEATINGWEAPONSBLASTING
G
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PHYSICS
H
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ELECTRICITY
H01
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ELECTRIC ELEMENTS
H02
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GENERATION, CONVERSION, OR DISTRIBUTION OF ELECTRIC POWER
H03
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ELECTRONIC CIRCUITRY
H04
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ELECTRIC COMMUNICATION TECHNIQUE
H05
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ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
H10
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SEMICONDUCTOR DEVICESELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR [2023.01]
H10B
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ELECTRONIC MEMORY DEVICES [2023.01]
H10D
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INORGANIC ELECTRIC SEMICONDUCTOR DEVICES [2025.01]
H10F
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INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION [2025.01]
H10F 10/00
Photovoltaics [2025.01]
H10F 10/00
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Individual photovoltaic cells, e.g. solar cells (electrolytic light-sensitive devices, e.g. dye-sensitised solar cells, H01G 9/20) [2025.01]
H10F 19/00
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Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F 10/00, e.g. photovoltaic modules [2025.01]
H10F 30/00
Radiation-controlled devices [2025.01]
H10F 30/00
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Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors [2025.01]
H10F 30/10
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the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors [2025.01]
H10F 30/20
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the devices having potential barriers, e.g. phototransistors [2025.01]
H10F 30/21
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. . the devices being sensitive to infrared, visible or ultraviolet radiation [2025.01]
H10F 30/22
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. . . the devices having only one potential barrier, e.g. photodiodes [2025.01]
H10F 30/221
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. . . . the potential barrier being a PN homojunction [2025.01]
H10F 30/222
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. . . . the potential barrier being a PN heterojunction [2025.01]
H10F 30/223
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. . . . the potential barrier being a PIN barrier [2025.01]
H10F 30/225
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. . . . the potential barrier working in avalanche mode, e.g. avalanche photodiodes [2025.01]
H10F 30/227
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. . . . the potential barrier being a Schottky barrier [2025.01]
H10F 30/24
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. . . the devices having only two potential barriers, e.g. bipolar phototransistors [2025.01]
H10F 30/26
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. . . the devices having three or more potential barriers, e.g. photothyristors [2025.01]
H10F 30/28
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. . . the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors [2025.01]
H10F 30/282
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. . . . Insulated-gate field-effect transistors [IGFET], e.g. MISFET [metal-insulator-semiconductor field-effect transistor] phototransistors [2025.01]
H10F 30/29
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. . the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation [2025.01]
H10F 30/292
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. . . Bulk-effect radiation detectors, e.g. Ge-Li compensated PIN gamma-ray detectors [2025.01]
H10F 30/295
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. . . Surface barrier or shallow PN junction radiation detectors, e.g. surface barrier alpha-particle detectors [2025.01]
H10F 30/298
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. . . the devices being characterised by field-effect operation, e.g. MIS type detectors [2025.01]
H10F 39/00
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Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F 30/00, e.g. radiation detectors comprising photodiode arrays [2025.01]
H10F 55/00
Other devices [2025.01]
H10F 55/00
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Radiation-sensitive semiconductor devices covered by groups H10F 10/00, H10F 19/00 or H10F 30/00 being structurally associated with electric light sources and electrically or optically coupled thereto [2025.01]
H10F 71/00
Manufacture or treatmentConstructional details [2025.01]
H10F 71/00
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Manufacture or treatment of devices covered by this subclass  (patterning processes to connect thin photovoltaic cells in integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F 19/33;  manufacture or treatment of encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F 19/80;  manufacture or treatment of integrated devices, or assemblies of multiple devices, comprising at least one element in which radiation controls the flow of current H10F 39/00) [2025.01]
H10F 77/00
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Constructional details of devices covered by this subclass (constructional details of integrated devices, or assemblies of multiple devices, comprising at least one element in which radiation controls the flow of current H10F 39/00) [2025.01]
H10F 99/00

H10F 99/00
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Subject matter not provided for in other groups of this subclass [2025.01]
H10H
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INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS [2025.01]
H10K
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ORGANIC ELECTRIC SOLID-STATE DEVICES [2023.01]
H10N
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ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR [2023.01]
H99
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SUBJECT MATTER NOT OTHERWISE PROVIDED FOR IN THIS SECTION [2006.01]

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