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Symbol IPC-Stellen auswählen Titel
A
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HUMAN NECESSITIES
B
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PERFORMING OPERATIONSTRANSPORTING
C
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CHEMISTRYMETALLURGY
D
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TEXTILESPAPER
E
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FIXED CONSTRUCTIONS
F
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MECHANICAL ENGINEERINGLIGHTINGHEATINGWEAPONSBLASTING
G
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PHYSICS
H
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ELECTRICITY
H01
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ELECTRIC ELEMENTS
H02
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GENERATION, CONVERSION, OR DISTRIBUTION OF ELECTRIC POWER
H03
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ELECTRONIC CIRCUITRY
H04
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ELECTRIC COMMUNICATION TECHNIQUE
H05
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ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
H10
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SEMICONDUCTOR DEVICESELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR [2023.01]
H10B
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ELECTRONIC MEMORY DEVICES [2023.01]
H10D
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INORGANIC ELECTRIC SEMICONDUCTOR DEVICES [2025.01]
H10D 1/00
Individual devices [2025.01]
H10D 1/00
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Resistors, capacitors or inductors [2025.01]
H10D 8/00
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Diodes  (variable-capacitance diodes H10D 1/64;  gated diodes H10D 12/00) [2025.01]
H10D 10/00
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Bipolar junction transistors [BJT] [2025.01]
H10D 12/00
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Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT] [2025.01]
H10D 18/00
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Thyristors [2025.01]
H10D 30/00
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Field-effect transistors [FET] (insulated-gate bipolar transistors H10D 12/00) [2025.01]
H10D 44/00
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Charge transfer devices [2025.01]
H10D 48/00
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Individual devices not covered by groups H10D 1/00-H10D 44/00 [2025.01]
H10D 48/01
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Manufacture or treatment [2025.01]
H10D 48/04
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. . of devices having bodies comprising selenium or tellurium in uncombined form [2025.01]
H10D 48/042
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. . . Preparation of foundation plates [2025.01]
H10D 48/043
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. . . Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination [2025.01]
H10D 48/044
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. . . . Conversion of the selenium or tellurium to the conductive state [2025.01]
H10D 48/045
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. . . . Treatment of the surface of the selenium or tellurium layer after having been made conductive [2025.01]
H10D 48/046
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. . . . Provision of discrete insulating layers [2025.01]
H10D 48/047
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. . . Application of an electrode to the exposed surface of the selenium or tellurium after the selenium or tellurium has been applied to foundation plates [2025.01]
H10D 48/048
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. . . Treatment of the complete device, e.g. by electroforming to form a barrier [2025.01]
H10D 48/049
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. . . . Ageing [2025.01]
H10D 48/07
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. . of devices having bodies comprising cuprous oxide [Cu2O] or cuprous iodide [CuI] [2025.01]
H10D 48/30
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Devices controlled by electric currents or voltages [2025.01]
H10D 48/32
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. . Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched [2025.01]
H10D 48/34
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. . . Bipolar devices [2025.01]
H10D 48/36
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. . . Unipolar devices [2025.01]
H10D 48/38
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. . Devices controlled only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched [2025.01]
H10D 48/40
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Devices controlled by magnetic fields [2025.01]
H10D 48/50
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Devices controlled by mechanical forces, e.g. pressure [2025.01]
H10D 62/00
Constructional details [2025.01]
H10D 62/00
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Semiconductor bodies, or regions thereof, of devices having potential barriers [2025.01]
H10D 64/00
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Electrodes of devices having potential barriers [2025.01]
H10D 80/00
Integrated devicesAssemblies of multiple devices [2025.01]
H10D 80/00
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Assemblies of multiple devices comprising at least one device covered by this subclass [2025.01]
H10D 84/00
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Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers [2025.01]
H10D 86/00
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Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates [2025.01]
H10D 87/00
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Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate [2025.01]
H10D 88/00
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Three-dimensional [3D] integrated devices [2025.01]
H10D 89/00
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Aspects of integrated devices not covered by groups H10D 84/00-H10D 88/00 [2025.01]
H10D 99/00

H10D 99/00
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Subject matter not provided for in other groups of this subclass [2025.01]
H10F
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INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION [2025.01]
H10H
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INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS [2025.01]
H10K
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ORGANIC ELECTRIC SOLID-STATE DEVICES [2023.01]
H10N
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ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR [2023.01]
H99
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SUBJECT MATTER NOT OTHERWISE PROVIDED FOR IN THIS SECTION [2006.01]

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