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Symbol IPC-Stellen auswählen Titel
A
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HUMAN NECESSITIES
B
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PERFORMING OPERATIONSTRANSPORTING
C
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CHEMISTRYMETALLURGY
D
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TEXTILESPAPER
E
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FIXED CONSTRUCTIONS
F
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MECHANICAL ENGINEERINGLIGHTINGHEATINGWEAPONSBLASTING
G
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PHYSICS
H
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ELECTRICITY
H01
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ELECTRIC ELEMENTS
H02
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GENERATION, CONVERSION, OR DISTRIBUTION OF ELECTRIC POWER
H03
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ELECTRONIC CIRCUITRY
H04
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ELECTRIC COMMUNICATION TECHNIQUE
H05
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ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
H10
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SEMICONDUCTOR DEVICESELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR [2023.01]
H10B
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ELECTRONIC MEMORY DEVICES [2023.01]
H10B 10/00
Volatile memory devices [2023.01]
H10B 10/00
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Static random access memory [SRAM] devices [2023.01]
H10B 12/00
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Dynamic random access memory [DRAM] devices [2023.01]
H10B 20/00
Non-volatile memory devices [2023.01]
H10B 20/00
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Read-only memory [ROM] devices [2023.01]
H10B 41/00
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Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates [2023.01]
H10B 41/10
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characterised by the top-view layout [2023.01]
H10B 41/20
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characterised by three-dimensional arrangements, e.g. with cells on different height levels [2023.01]
H10B 41/23
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. . with source and drain on different levels, e.g. with sloping channels [2023.01]
H10B 41/27
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. . . the channels comprising vertical portions, e.g. U-shaped channels [2023.01]
H10B 41/30
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characterised by the memory core region [2023.01]
H10B 41/35
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. . with a cell select transistor, e.g. NAND [2023.01]
H10B 41/40
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characterised by the peripheral circuit region [2023.01]
H10B 41/41
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. . of a memory region comprising a cell select transistor, e.g. NAND [2023.01]
H10B 41/42
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. . Simultaneous manufacture of periphery and memory cells [2023.01]
H10B 41/43
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. . . comprising only one type of peripheral transistor [2023.01]
H10B 41/44
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. . . . with a control gate layer also being used as part of the peripheral transistor [2023.01]
H10B 41/46
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. . . . with an inter-gate dielectric layer also being used as part of the peripheral transistor [2023.01]
H10B 41/47
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. . . . with a floating-gate layer also being used as part of the peripheral transistor [2023.01]
H10B 41/48
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. . . . with a tunnel dielectric layer also being used as part of the peripheral transistor [2023.01]
H10B 41/49
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. . . comprising different types of peripheral transistor [2023.01]
H10B 41/50
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characterised by the boundary region between the core region and the peripheral circuit region [2023.01]
H10B 41/60
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the control gate being a doped region, e.g. single-poly memory cell [2023.01]
H10B 41/70
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the floating gate being an electrode shared by two or more components [2023.01]
H10B 43/00
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EEPROM devices comprising charge-trapping gate insulators [2023.01]
H10B 51/00
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Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors [2023.01]
H10B 53/00
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Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors [2023.01]
H10B 61/00
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Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices [2023.01]
H10B 63/00
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Resistance change memory devices, e.g. resistive RAM [ReRAM] devices [2023.01]
H10B 69/00
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Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B 41/00-H10B 63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices [2023.01]
H10B 80/00

H10B 80/00
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Assemblies of multiple devices comprising at least one memory device covered by this subclass [2023.01]
H10B 99/00
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Subject matter not provided for in other groups of this subclass [2023.01]
H10K
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ORGANIC ELECTRIC SOLID-STATE DEVICES [2023.01]
H10N
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ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR [2023.01]
H99
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SUBJECT MATTER NOT OTHERWISE PROVIDED FOR IN THIS SECTION [2006.01]

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