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Symbol IPC-Stellen auswählen Titel
A
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HUMAN NECESSITIES
B
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PERFORMING OPERATIONSTRANSPORTING
C
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CHEMISTRYMETALLURGY
D
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TEXTILESPAPER
E
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FIXED CONSTRUCTIONS
F
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MECHANICAL ENGINEERINGLIGHTINGHEATINGWEAPONSBLASTING
G
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PHYSICS
H
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ELECTRICITY
H01
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BASIC ELECTRIC ELEMENTS
H01B
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CABLESCONDUCTORSINSULATORSSELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES (selection for magnetic properties H01F 1/00; waveguides H01P)
H01C
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RESISTORS
H01F
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MAGNETSINDUCTANCESTRANSFORMERSSELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES [2]
H01G
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CAPACITORSCAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE (selection of specified materials as dielectric H01B 3/00; capacitors with potential-jump or surface barrier H01L 29/00)
H01H
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ELECTRIC SWITCHESRELAYSSELECTORSEMERGENCY PROTECTIVE DEVICES (contact cables H01B 7/10; electrolytic self-interrupters H01G 9/18; emergency protective circuit arrangements H02H; switching by electronic means without contact-making H03K 17/00)
H01J
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ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; arc lamps with consumable electrodes H05B; particle accelerators H05H)
H01K
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ELECTRIC INCANDESCENT LAMPS (details, apparatus or processes for manufacture applicable to both discharge devices and incandescent lamps H01J; light sources using a combination of incandescent and other types of light generation H01J 61/96, H05B 35/00)
H01L
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SEMICONDUCTOR DEVICESELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR (use of semiconductor devices for measuring G01; resistors in general H01C; magnets, inductors, transformers H01F; capacitors in general H01G; electrolytic devices H01G 9/00; batteries, accumulators H01M; waveguides, resonators, or lines of the waveguide type H01P; line connectors, current collectors H01R; stimulated-emission devices H01S; electromechanical resonators H03H; loudspeakers, microphones, gramophone pick-ups or like acoustic electromechanical transducers H04R; electric light sources in general H05B; printed circuits, hybrid circuits, casings or constructional details of electrical apparatus, manufacture of assemblages of electrical components H05K; use of semiconductor devices in circuits having a particular application, see the subclass for the application) [2]
H01M
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PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY [2]
H01P
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WAVEGUIDESRESONATORS, LINES OR OTHER DEVICES OF THE WAVEGUIDE TYPE (operating at optical frequencies G02B)
H01Q
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ANTENNAS, i.e. RADIO AERIALS (radiators or antennas for microwave heating H05B 6/72)
H01R
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ELECTRICALLY-CONDUCTIVE CONNECTIONSSTRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTSCOUPLING DEVICESCURRENT COLLECTORS
H01S
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DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHTDEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL [2019.01]
H01S 1/00
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Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range [1, 2006.01]
H01S 3/00
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Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range (semiconductors lasers H01S 5/00) [1, 2006.01]
H01S 4/00
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Devices using stimulated emission of electromagnetic radiation in wave ranges other than those covered by groups H01S 1/00, H01S 3/00 or H01S 5/00, e.g. phonon masers, X-ray lasers or gamma-ray lasers [1, 2006.01]
H01S 5/00
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Semiconductor lasers (superluminescent diodes H01L 33/00) [7, 2006.01]
H01S 5/02
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Structural details or components not essential to laser action [7, 2006.01]
H01S 5/022
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. . MountingsHousings [7, 2006.01]
H01S 5/024
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. . Cooling arrangements [7, 2006.01]
H01S 5/026
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. . Monolithically integrated components, e.g. waveguides, monitoring photo-detectors or drivers (stabilisation of output H01S 5/06) [7, 2006.01]
H01S 5/028
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. . Coatings [7, 2006.01]
H01S 5/04
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Processes or apparatus for excitation, e.g. pumping (H01S 5/06 takes precedence) [7, 2006.01]
H01S 5/042
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. . Electrical excitation [7, 2006.01]
H01S 5/06
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Arrangements for controlling the laser output parameters, e.g. by operating on the active medium [7, 2006.01]
H01S 5/062
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. . by varying the potential of the electrodes (H01S 5/065 takes precedence) [7, 2006.01]
H01S 5/0625
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. . . in multi-section lasers [7, 2006.01]
H01S 5/065
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. . Mode lockingMode suppressionMode selection [7, 2006.01]
H01S 5/068
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. . Stabilisation of laser output parameters (H01S 5/0625 takes precedence) [7, 2006.01]
H01S 5/0683
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. . . by monitoring the optical output parameters [7, 2006.01]
H01S 5/0687
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. . . . Stabilising the frequency of the laser [7, 2006.01]
H01S 5/10
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Construction or shape of the optical resonator [7, 2006.01]
H01S 5/12
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. . the resonator having a periodic structure, e.g. in distributed feed-back [DFB] lasers (H01S 5/18 takes precedence) [7, 2006.01]
H01S 5/125
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. . . Distributed Bragg reflector [DBR] lasers [7, 2006.01]
H01S 5/14
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. . External cavity lasers (H01S 5/18 takes precedence; mode locking H01S 5/065) [7, 2006.01]
H01S 5/16
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. . Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface (H01S 5/14 takes precedence) [7, 2006.01]
H01S 5/18
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. . Surface-emitting [SE] lasers [7, 2006.01]
H01S 5/183
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. . . having a vertical cavity [VCSE-lasers] [7, 2006.01]
H01S 5/187
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. . . using a distributed Bragg reflector [SE-DBR-lasers] (H01S 5/183 takes precedence) [7, 2006.01]
H01S 5/20
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Structure or shape of the semiconductor body to guide the optical wave [7, 2006.01]
H01S 5/22
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. . having a ridge or a stripe structure [7, 2006.01]
H01S 5/223
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. . . Buried stripe structure (H01S 5/227 takes precedence) [7, 2006.01]
H01S 5/227
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. . . Buried mesa structure [7, 2006.01]
H01S 5/24
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. . having a grooved structure, e.g. V-grooved [7, 2006.01]
H01S 5/30
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Structure or shape of the active regionMaterials used for the active region [7, 2006.01]
H01S 5/32
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. . comprising PN junctions, e.g. hetero- or double- hetero-structures (H01S 5/34, H01S 5/36 take precedence) [7, 2006.01]
H01S 5/323
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. . . in AIIIBV compounds, e.g. AlGaAs-laser [7, 2006.01]
H01S 5/327
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. . . in AIIBVI compounds, e.g. ZnCdSe-laser [7, 2006.01]
H01S 5/34
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. . comprising quantum well or superlattice structures, e.g. single quantum well lasers [SQW-lasers], multiple quantum well lasers [MQW-lasers] or graded index separate confinement heterostructure lasers [GRINSCH-lasers] (H01S 5/36 takes precedence) [7, 2006.01]
H01S 5/343
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. . . in AIIIBV compounds, e.g. AlGaAs-laser [7, 2006.01]
H01S 5/347
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. . . in AIIBVI compounds, e.g. ZnCdSe-laser [7, 2006.01]
H01S 5/36
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. . comprising organic materials [2006.01]
H01S 5/40
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Arrangement of two or more semiconductor lasers, not provided for in groups H01S 5/02-H01S 5/30 (H01S 5/50 takes precedence) [7, 2006.01]
H01S 5/42
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. . Arrays of surface emitting lasers [7, 2006.01]
H01S 5/50
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Amplifier structures not provided for in groups H01S 5/02-H01S 5/30 [7, 2006.01]
H01T
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SPARK GAPSOVERVOLTAGE ARRESTERS USING SPARK GAPSSPARKING PLUGSCORONA DEVICESGENERATING IONS TO BE INTRODUCED INTO NON-ENCLOSED GASES (overvoltage protection circuits H02H)
H02
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GENERATION, CONVERSION, OR DISTRIBUTION OF ELECTRIC POWER
H03
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BASIC ELECTRONIC CIRCUITRY
H04
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ELECTRIC COMMUNICATION TECHNIQUE
H05
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ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
H99
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SUBJECT MATTER NOT OTHERWISE PROVIDED FOR IN THIS SECTION [2006.01]

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