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A
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SECTION A — HUMAN NECESSITIES
B
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SECTION B — PERFORMING OPERATIONSTRANSPORTING
C
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SECTION C — CHEMISTRYMETALLURGY
D
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SECTION D — TEXTILESPAPER
E
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SECTION E — FIXED CONSTRUCTIONS
F
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SECTION F — MECHANICAL ENGINEERINGLIGHTINGHEATINGWEAPONSBLASTING
G
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SECTION G — PHYSICS
H
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SECTION H — ELECTRICITY
H01
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BASIC ELECTRIC ELEMENTS
H01B
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CABLESCONDUCTORSINSULATORSSELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES (selection for magnetic properties H01F 1/00; waveguides H01P)
H01C
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RESISTORS
H01F
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MAGNETSINDUCTANCESTRANSFORMERSSELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES [2]
H01G
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CAPACITORSCAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE (selection of specified materials as dielectric H01B 3/00; capacitors with potential-jump or surface barrier H01L 29/00)
H01H
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ELECTRIC SWITCHESRELAYSSELECTORSEMERGENCY PROTECTIVE DEVICES (contact cables H01B 7/10; electrolytic self-interrupters H01G 9/18; emergency protective circuit arrangements H02H; switching by electronic means without contact-making H03K 17/00)
H01J
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ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; arc lamps with consumable electrodes H05B; particle accelerators H05H)
H01K
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ELECTRIC INCANDESCENT LAMPS (details or apparatus or processes for manufacture applicable to both discharge devices and incandescent lamps H01J; light sources using a combination of incandescent and other types of light generation H01J 61/96, H05B 35/00)
H01L
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SEMICONDUCTOR DEVICESELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR (use of semiconductor devices for measuring G01; resistors in general H01C; magnets, inductors, transformers H01F; capacitors in general H01G; electrolytic devices H01G 9/00; batteries, accumulators H01M; waveguides, resonators, or lines of the waveguide type H01P; line connectors, current collectors H01R; stimulated-emission devices H01S; electromechanical resonators H03H; loudspeakers, microphones, gramophone pick-ups or like acoustic electromechanical transducers H04R; electric light sources in general H05B; printed circuits, hybrid circuits, casings or constructional details of electrical apparatus, manufacture of assemblages of electrical components H05K; use of semiconductor devices in circuits having a particular application, see the subclass for the application) [2]
H01M
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PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY (electrochemical processes or apparatus in general C25; semiconductor or other solid state devices for converting light or heat into electrical energy H01L, e.g. H01L 31/00, H01L 35/00, H01L 37/00) [2]
H01P
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WAVEGUIDESRESONATORS, LINES OR OTHER DEVICES OF THE WAVEGUIDE TYPE (operating at optical frequencies G02B)
H01Q
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AERIALS (microwave radiators for near-field therapeutic treatment A61N 5/04; apparatus for testing aerials or for measuring aerial characteristics G01R; waveguides H01P; radiators or aerials for microwave heating H05B 6/72)
H01R
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ELECTRICALLY-CONDUCTIVE CONNECTIONSSTRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTSCOUPLING DEVICESCURRENT COLLECTORS (switches, fuses H01H; coupling devices of the waveguide type H01P 5/00; switching arrangements for the supply or distribution of electric power H02B; installations of electric cables or lines, or of combined optical and electric cables or lines, or of auxiliary apparatus H02G; printed means for providing electric connections to or between printed circuits H05K)
H01S
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DEVICES USING STIMULATED EMISSION
H01S 1/00
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Masers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of electromagnetic waves of wavelength longer than that of infra-red waves
H01S 3/00
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Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves (semiconductor lasers H01S 5/00)
H01S 4/00
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Devices using stimulated emission of wave energy other than those covered by groups H01S 1/00, H01S 3/00 or H01S 5/00, e.g. phonon maser, gamma maser
H01S 5/00
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Semiconductor lasers [7]
H01S 5/02
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Structural details or components not essential to laser action [7]
H01S 5/022
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. . MountingsHousings [7]
H01S 5/024
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. . Cooling arrangements [7]
H01S 5/026
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. . Monolithically integrated components, e.g. waveguides, monitoring photo-detectors or drivers (stabilisation of output H01S 5/06) [7]
H01S 5/028
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. . Coatings [7]
H01S 5/04
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Processes or apparatus for excitation, e.g. pumping (H01S 5/06 takes precedence) [7]
H01S 5/042
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. . Electrical excitation [7]
H01S 5/06
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Arrangements for controlling the laser output parameters, e.g. by operating on the active medium [7]
H01S 5/062
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. . by varying the potential of the electrodes (H01S 5/065 takes precedence) [7]
H01S 5/0625
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. . . in multi-section lasers [7]
H01S 5/065
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. . Mode lockingMode suppressionMode selection [7]
H01S 5/068
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. . Stabilisation of laser output parameters (H01S 5/0625 takes precedence) [7]
H01S 5/0683
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. . . by monitoring the optical output parameters [7]
H01S 5/0687
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. . . . Stabilising the frequency of the laser [7]
H01S 5/10
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Construction or shape of the optical resonator [7]
H01S 5/12
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. . the resonator having a periodic structure, e.g. in distributed feed-back lasers (DFB-lasers) (H01S 5/18 takes precedence) [7]
H01S 5/125
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. . . Distributed Bragg reflector lasers (DBR-lasers) [7]
H01S 5/14
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. . External cavity lasers (H01S 5/18 takes precedence; mode locking H01S 5/065) [7]
H01S 5/16
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. . Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface (H01S 5/14 takes precedence) [7]
H01S 5/18
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. . Surface-emitting lasers (SE-lasers) [7]
H01S 5/183
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. . . having a vertical cavity (VCSE-lasers) [7]
H01S 5/187
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. . . using a distributed Bragg reflector (SE-DBR-lasers) (H01S 5/183 takes precedence) [7]
H01S 5/20
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Structure or shape of the semiconductor body to guide the optical wave [7]
H01S 5/22
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. . having a ridge or a stripe structure [7]
H01S 5/223
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. . . Buried stripe structure (H01S 5/227 takes precedence) [7]
H01S 5/227
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. . . Buried mesa structure [7]
H01S 5/24
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. . having a grooved structure, e.g. V-grooved [7]
H01S 5/30
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Structure or shape of the active regionMaterials used for the active region [7]
H01S 5/32
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. . comprising PN junctions, e.g. hetero- or double- hetero-structures (H01S 5/34, H01S 5/36 take precedence) [7]
H01S 5/323
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. . . in AIIIBV compounds, e.g. AlGaAs-laser [7]
H01S 5/327
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. . . in AIIBVI compounds, e.g. ZnCdSe-laser [7]
H01S 5/34
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. . comprising quantum well or superlattice structures, e.g. single quantum well lasers (SQW-lasers), multiple quantum well lasers (MQW-lasers), graded index separate confinement heterostructure lasers (GRINSCH-lasers) (H01S 5/36 takes precedence) [7]
H01S 5/343
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. . . in AIIIBV compounds, e.g. AlGaAs-laser [7]
H01S 5/347
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. . . in AIIBVI compounds, e.g. ZnCdSe-laser [7]
H01S 5/36
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. . comprising organic materials [2006.01]
H01S 5/40
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Arrangement of two or more semiconductor lasers, not provided for in groups H01S 5/02-H01S 5/30 (H01S 5/50 takes precedence) [7]
H01S 5/42
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. . Arrays of surface emitting lasers [7]
H01S 5/50
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Amplifier structures not provided for in groups H01S 5/02-H01S 5/30 [7]
H01T
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SPARK GAPSOVERVOLTAGE ARRESTERS USING SPARK GAPSSPARKING PLUGSCORONA DEVICESGENERATING IONS TO BE INTRODUCED INTO NON-ENCLOSED GASES (working of metal by the action of a high concentration of electric current B23H; welding, e.g. arc welding, electron beam welding or electrolytic welding, B23K; gas-filled discharge tubes with solid cathode H01J 17/00; electric arc lamps H05B 31/00)
H02
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GENERATION, CONVERSION, OR DISTRIBUTION OF ELECTRIC POWER
H03
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BASIC ELECTRONIC CIRCUITRY
H04
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ELECTRIC COMMUNICATION TECHNIQUE
H05
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ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
H99
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SUBJECT MATTER NOT OTHERWISE PROVIDED FOR IN THIS SECTION [2006.01]

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