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Symbol IPC-Stellen auswählen Titel
A
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HUMAN NECESSITIES
B
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PERFORMING OPERATIONSTRANSPORTING
C
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CHEMISTRYMETALLURGY
D
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TEXTILESPAPER
E
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FIXED CONSTRUCTIONS
F
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MECHANICAL ENGINEERINGLIGHTINGHEATINGWEAPONSBLASTING
G
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PHYSICS
H
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ELECTRICITY
H01
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ELECTRIC ELEMENTS
H01B
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CABLESCONDUCTORSINSULATORSSELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES (selection for magnetic properties H01F 1/00; waveguides H01P)
H01C
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RESISTORS
H01F
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MAGNETSINDUCTANCESTRANSFORMERSSELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES [2]
H01G
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CAPACITORSCAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE (selection of specified materials as dielectric H01B 3/00; capacitors having potential barriers H01L 29/00)
H01H
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ELECTRIC SWITCHESRELAYSSELECTORSEMERGENCY PROTECTIVE DEVICES (contact cables H01B 7/10;  electrolytic self-interrupters H01G 9/18;  emergency protective circuit arrangements H02H;  switching by electronic means without contact-making H03K 17/00)
H01J
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ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; arc lamps with consumable electrodes H05B; particle accelerators H05H)
H01K
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ELECTRIC INCANDESCENT LAMPS (details, apparatus or processes for manufacture applicable to both discharge devices and incandescent lamps H01J;  light sources using a combination of incandescent and other types of light generation H01J 61/96, H05B 35/00)
H01L
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SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10 (use of semiconductor devices for measuring G01;  resistors in general H01C;  magnets, inductors or transformers H01F;  capacitors in general H01G;  electrolytic devices H01G 9/00;  batteries or accumulators H01M;  waveguides, resonators or lines of the waveguide type H01P;  line connectors or current collectors H01R;  stimulated-emission devices H01S;  electromechanical resonators H03H;  loudspeakers, microphones, gramophone pick-ups or like acoustic electromechanical transducers H04R;  electric light sources in general H05B;  printed circuits, hybrid circuits, casings or constructional details of electrical apparatus, manufacture of assemblages of electrical components H05K;  use of semiconductor devices in circuits having a particular application, see the subclass for the application) [2]
H01L 21/00
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Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof [2, 2006.01]
H01L 23/00
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Details of semiconductor or other solid state devices (H01L 25/00 takes precedence) [2, 5, 2006.01]
H01L 25/00
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Assemblies consisting of a plurality of individual semiconductor or other solid state devices (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00; photovoltaic modules or arrays of photovoltaic cells H01L 31/042) [2, 5, 2006.01]
H01L 27/00
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Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (details thereof H01L 23/00, H01L 29/00-H01L 33/00, H10K, H10N; assemblies consisting of a plurality of individual solid state devices H01L 25/00) [2, 2006.01]
H01L 29/00
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Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriersCapacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layerDetails of semiconductor bodies or of electrodes thereof (H01L 31/00-H01L 33/00, H10K 10/00, H10N take precedence; details other than of semiconductor bodies or of electrodes thereof H01L 23/00; devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00) [2, 6, 2006.01]
H01L 31/00
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Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiationProcesses or apparatus specially adapted for the manufacture or treatment thereof or of parts thereofDetails thereof (H10K 30/00 takes precedence; devices consisting of a plurality of solid state components formed in, or on, a common substrate, other than combinations of radiation-sensitive components with one or more electric light sources, H01L 27/00) [2, 6, 2006.01]
H01L 33/00
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Semiconductor devices having potential barriers specially adapted for light emissionProcesses or apparatus specially adapted for the manufacture or treatment thereof or of parts thereofDetails thereof (H10K 50/00 takes precedence; devices consisting of a plurality of semiconductor components formed in or on a common substrate and including semiconductor components having potential barriers, specially adapted for light emission H01L 27/15; semiconductor lasers H01S 5/00) [2, 2006.01, 2010.01]
H01L 33/02
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characterised by the semiconductor bodies [2010.01]
H01L 33/04
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. . with a quantum effect structure or superlattice, e.g. tunnel junction [2010.01]
H01L 33/06
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. . . within the light emitting region, e.g. quantum confinement structure or tunnel barrier [2010.01]
H01L 33/08
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. . with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body (H01L 27/15 takes precedence) [2010.01]
H01L 33/10
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. . with a light reflecting structure, e.g. semiconductor Bragg reflector [2010.01]
H01L 33/12
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. . with a stress relaxation structure, e.g. buffer layer [2010.01]
H01L 33/14
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. . with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure [2010.01]
H01L 33/16
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. . with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous [2010.01]
H01L 33/18
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. . . within the light emitting region [2010.01]
H01L 33/20
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. . with a particular shape, e.g. curved or truncated substrate [2010.01]
H01L 33/22
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. . . Roughened surfaces, e.g. at the interface between epitaxial layers [2010.01]
H01L 33/24
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. . . of the light emitting region, e.g. non-planar junction [2010.01]
H01L 33/26
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. . Materials of the light emitting region [2010.01]
H01L 33/28
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. . . containing only elements of Group II and Group VI of the Periodic Table [2010.01]
H01L 33/30
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. . . containing only elements of Group III and Group V of the Periodic Table [2010.01]
H01L 33/32
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. . . . containing nitrogen [2010.01]
H01L 33/34
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. . . containing only elements of Group IV of the Periodic Table [2010.01]
H01L 33/36
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characterised by the electrodes [2010.01]
H01L 33/38
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. . with a particular shape [2010.01]
H01L 33/40
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. . Materials therefor [2010.01]
H01L 33/42
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. . . Transparent materials [2010.01]
H01L 33/44
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characterised by the coatings, e.g. passivation layer or anti-reflective coating [2010.01]
H01L 33/46
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. . Reflective coating, e.g. dielectric Bragg reflector [2010.01]
H01L 33/48
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characterised by the semiconductor body packages [2010.01]
H01L 33/50
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. . Wavelength conversion elements [2010.01]
H01L 33/52
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. . Encapsulations [2010.01]
H01L 33/54
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. . . having a particular shape [2010.01]
H01L 33/56
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. . . Materials, e.g. epoxy or silicone resin [2010.01]
H01L 33/58
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. . Optical field-shaping elements [2010.01]
H01L 33/60
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. . . Reflective elements [2010.01]
H01L 33/62
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. . Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls [2010.01]
H01L 33/64
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. . Heat extraction or cooling elements [2010.01]
H01M
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PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY [2]
H01P
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WAVEGUIDESRESONATORS, LINES OR OTHER DEVICES OF THE WAVEGUIDE TYPE (operating at optical frequencies G02B)
H01Q
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ANTENNAS, i.e. RADIO AERIALS (radiators or antennas for microwave heating H05B 6/72)
H01R
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ELECTRICALLY-CONDUCTIVE CONNECTIONSSTRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTSCOUPLING DEVICESCURRENT COLLECTORS
H01S
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DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHTDEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
H01T
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SPARK GAPSOVERVOLTAGE ARRESTERS USING SPARK GAPSSPARKING PLUGSCORONA DEVICESGENERATING IONS TO BE INTRODUCED INTO NON-ENCLOSED GASES (overvoltage protection circuits H02H)
H02
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GENERATION, CONVERSION, OR DISTRIBUTION OF ELECTRIC POWER
H03
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ELECTRONIC CIRCUITRY
H04
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ELECTRIC COMMUNICATION TECHNIQUE
H05
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ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
H10
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SEMICONDUCTOR DEVICESELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR [2023.01]
H99
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SUBJECT MATTER NOT OTHERWISE PROVIDED FOR IN THIS SECTION [2006.01]

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