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IPC-Stelle: H01L 31/00 Hauptgruppe [Version 2016.01, Sprache EN - English]

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DEKLA-Gruppen

Symbol		Titel
A Hierarchieinformationen		HUMAN NECESSITIES
B Hierarchieinformationen		PERFORMING OPERATIONS; TRANSPORTING
C Hierarchieinformationen		CHEMISTRY; METALLURGY
D Hierarchieinformationen		TEXTILES; PAPER
E Hierarchieinformationen		FIXED CONSTRUCTIONS
F Hierarchieinformationen		MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
G Hierarchieinformationen		PHYSICS
H Hierarchieinformationen		ELECTRICITY
H01 Hierarchieinformationen		BASIC ELECTRIC ELEMENTS
H01B Hierarchieinformationen		CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES (selection for magnetic properties H01F 1/00; waveguides H01P)
H01C Hierarchieinformationen		RESISTORS
H01F Hierarchieinformationen		MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES [2]
H01G Hierarchieinformationen		CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE (selection of specified materials as dielectric H01B 3/00; capacitors with potential-jump or surface barrier H01L 29/00)
H01H Hierarchieinformationen		ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES (contact cables H01B 7/10; electrolytic self-interrupters H01G 9/18; emergency protective circuit arrangements H02H; switching by electronic means without contact-making H03K 17/00)
H01J Hierarchieinformationen		ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; arc lamps with consumable electrodes H05B; particle accelerators H05H)
H01K Hierarchieinformationen		ELECTRIC INCANDESCENT LAMPS (details or apparatus or processes for manufacture applicable to both discharge devices and incandescent lamps H01J; light sources using a combination of incandescent and other types of light generation H01J 61/96, H05B 35/00)
H01L Hierarchieinformationen		SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR (use of semiconductor devices for measuring G01; resistors in general H01C; magnets, inductors, transformers H01F; capacitors in general H01G; electrolytic devices H01G 9/00; batteries, accumulators H01M; waveguides, resonators, or lines of the waveguide type H01P; line connectors, current collectors H01R; stimulated-emission devices H01S; electromechanical resonators H03H; loudspeakers, microphones, gramophone pick-ups or like acoustic electromechanical transducers H04R; electric light sources in general H05B; printed circuits, hybrid circuits, casings or constructional details of electrical apparatus, manufacture of assemblages of electrical components H05K; use of semiconductor devices in circuits having a particular application, see the subclass for the application) [2]
H01L 21/00 Hierarchieinformationen		Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof [2, 2006.01]
H01L 23/00 Hierarchieinformationen		Details of semiconductor or other solid state devices (H01L 25/00 takes precedence) [2, 5, 2006.01]
H01L 25/00 Hierarchieinformationen		Assemblies consisting of a plurality of individual semiconductor or other solid state devices (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00; photovoltaic modules or arrays of photovoltaic cells H01L 31/042) [2, 5, 2006.01]
H01L 27/00 Hierarchieinformationen		Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (details thereof H01L 23/00, H01L 29/00-H01L 51/00; assemblies consisting of a plurality of individual solid state devices H01L 25/00) [2, 2006.01]
H01L 29/00 Hierarchieinformationen		Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (H01L 31/00-H01L 47/00, H01L 51/05 take precedence; details other than of semiconductor bodies or of electrodes thereof H01L 23/00; devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00) [2, 6, 2006.01]
H01L 31/00 Hierarchieinformationen		Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (H01L 51/42 takes precedence; devices consisting of a plurality of solid state components formed in, or on, a common substrate, other than combinations of radiation-sensitive components with one or more electric light sources, H01L 27/00) [2, 6, 2006.01]
H01L 31/02 Hierarchieinformationen		. Details [2, 2006.01]
H01L 31/0203 Hierarchieinformationen		. . Containers; Encapsulations (for photovoltaic devices H01L 31/048; for organic photosensitive devices H01L 51/44) [5, 2006.01, 2014.01]
H01L 31/0216 Hierarchieinformationen		. . Coatings (H01L 31/041 takes precedence) [5, 2006.01, 2014.01]
H01L 31/0224 Hierarchieinformationen		. . Electrodes [5, 2006.01]
H01L 31/0232 Hierarchieinformationen		. . Optical elements or arrangements associated with the device (H01L 31/0236 takes precedence; for photovoltaic cells H01L 31/054; for photovoltaic modules H02S 40/20) [5, 2006.01, 2014.01]
H01L 31/0236 Hierarchieinformationen		. . Special surface textures [5, 2006.01]
H01L 31/024 Hierarchieinformationen		. . Arrangements for cooling, heating, ventilating or temperature compensation (for photovoltaic devices H01L 31/052) [5, 2006.01, 2014.01]
H01L 31/0248 Hierarchieinformationen		. characterised by their semiconductor bodies [5, 2006.01]
H01L 31/0256 Hierarchieinformationen		. . characterised by the material [5, 2006.01]
H01L 31/0264 Hierarchieinformationen		. . . Inorganic materials [5, 2006.01]
H01L 31/0272 Hierarchieinformationen		. . . . Selenium or tellurium [5, 2006.01]
H01L 31/028 Hierarchieinformationen		. . . . including, apart from doping material or other impurities, only elements of Group IV of the Periodic System [5, 2006.01]
H01L 31/0288 Hierarchieinformationen		. . . . . characterised by the doping material [5, 2006.01]
H01L 31/0296 Hierarchieinformationen		. . . . including, apart from doping material or other impurities, only A_IIB_VI compounds, e.g. CdS, ZnS, HgCdTe [5, 2006.01]
H01L 31/0304 Hierarchieinformationen		. . . . including, apart from doping materials or other impurities, only A_IIIB_V compounds [5, 2006.01]
H01L 31/0312 Hierarchieinformationen		. . . . including, apart from doping materials or other impurities, only A_IVB_IV compounds, e.g. SiC [5, 2006.01]
H01L 31/032 Hierarchieinformationen		. . . . including, apart from doping materials or other impurities, only compounds not provided for in groups H01L 31/0272-H01L 31/0312 [5, 2006.01]
H01L 31/0328 Hierarchieinformationen		. . . . including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L 31/0272-H01L 31/032 [5, 2006.01]
H01L 31/0336 Hierarchieinformationen		. . . . . in different semiconductor regions, e.g. Cu₂X/CdX hetero-junctions, X being an element of Group VI of the Periodic System [5, 2006.01]
H01L 31/0352 Hierarchieinformationen		. . characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions [5, 2006.01]
H01L 31/036 Hierarchieinformationen		. . characterised by their crystalline structure or particular orientation of the crystalline planes [5, 2006.01]
H01L 31/0368 Hierarchieinformationen		. . . including polycrystalline semiconductors (H01L 31/0392 takes precedence) [5, 2006.01]
H01L 31/0376 Hierarchieinformationen		. . . including amorphous semiconductors (H01L 31/0392 takes precedence) [5, 2006.01]
H01L 31/0384 Hierarchieinformationen		. . . including other non-monocrystalline materials, e.g. semiconductor particles embedded in an insulating material (H01L 31/0392 takes precedence) [5, 2006.01]
H01L 31/0392 Hierarchieinformationen		. . . including thin films deposited on metallic or insulating substrates [5, 2006.01]
H01L 31/04 Hierarchieinformationen		. adapted as photovoltaic [PV] conversion devices (testing thereof during manufacture H01L 21/66; testing thereof after manufacture H02S 50/10) [2, 2006.01, 2014.01]
H01L 31/041 Hierarchieinformationen		. . Provisions for preventing damage caused by corpuscular radiation, e.g. for space applications [2014.01]
H01L 31/042 Hierarchieinformationen		. . PV modules or arrays of single PV cells (supporting structures for PV modules H02S 20/00) [5, 2006.01, 2014.01]
H01L 31/043 Hierarchieinformationen		. . . Mechanically stacked PV cells [2014.01]
H01L 31/044 Hierarchieinformationen		. . . including bypass diodes (bypass diodes in the junction box H02S 40/34) [2014.01]
H01L 31/0443 Hierarchieinformationen		. . . . comprising bypass diodes integrated or directly associated with the devices, e.g. bypass diodes integrated or formed in or on the same substrate as the photovoltaic cells [2014.01]
H01L 31/0445 Hierarchieinformationen		. . . including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells [2014.01]
H01L 31/046 Hierarchieinformationen		. . . . PV modules composed of a plurality of thin film solar cells deposited on the same substrate [2014.01]
H01L 31/0463 Hierarchieinformationen		. . . . . characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers [2014.01]
H01L 31/0465 Hierarchieinformationen		. . . . . comprising particular structures for the electrical interconnection of adjacent PV cells in the module (H01L 31/0463 takes precedence) [2014.01]
H01L 31/0468 Hierarchieinformationen		. . . . . comprising specific means for obtaining partial light transmission through the module, e.g. partially transparent thin film solar modules for windows [2014.01]
H01L 31/047 Hierarchieinformationen		. . . PV cell arrays including PV cells having multiple vertical junctions or multiple V-groove junctions formed in a semiconductor substrate [2014.01]
H01L 31/0475 Hierarchieinformationen		. . . PV cell arrays made by cells in a planar, e.g. repetitive, configuration on a single semiconductor substrate; PV cell microarrays (PV modules composed of a plurality of thin film solar cells deposited on the same substrate H01L 31/046) [2014.01]
H01L 31/048 Hierarchieinformationen		. . . Encapsulation of modules [5, 2006.01, 2014.01]
H01L 31/049 Hierarchieinformationen		. . . . Protective back sheets [2014.01]
H01L 31/05 Hierarchieinformationen		. . . Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells (electrodes H01L 31/0224; electrical interconnection of thin film solar cells formed on a common substrate H01L 31/046; particular structures for electrical interconnecting of adjacent thin film solar cells in the module H01L 31/0465; electrical interconnection means specially adapted for electrically connecting two or more PV modules H02S 40/36) [5, 2006.01, 2014.01]
H01L 31/052 Hierarchieinformationen		. . Cooling means directly associated or integrated with the PV cell, e.g. integrated Peltier elements for active cooling or heat sinks directly associated with the PV cells (cooling means in combination with the PV module H02S 40/42) [5, 2006.01, 2014.01]
H01L 31/0525 Hierarchieinformationen		. . . including means to utilise heat energy directly associated with the PV cell, e.g. integrated Seebeck elements [2014.01]
H01L 31/053 Hierarchieinformationen		. . Energy storage means directly associated or integrated with the PV cell, e.g. a capacitor integrated with a PV cell (energy storage means associated with the PV module H02S 40/38) [2014.01]
H01L 31/054 Hierarchieinformationen		. . Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means [2014.01]
H01L 31/055 Hierarchieinformationen		. . . where light is absorbed and re-emitted at a different wavelength by the optical element directly associated or integrated with the PV cell, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements [5, 2006.01, 2014.01]
H01L 31/056 Hierarchieinformationen		. . . the light-reflecting means being of the back surface reflector [BSR] type [2014.01]
H01L 31/06 Hierarchieinformationen		. . characterised by at least one potential-jump barrier or surface barrier [2, 2006.01, 2012.01]
H01L 31/061 Hierarchieinformationen		. . . the potential barriers being of the point-contact type (H01L 31/07 takes precedence) [2012.01]
H01L 31/062 Hierarchieinformationen		. . . the potential barriers being only of the metal-insulator-semiconductor type [5, 2006.01, 2012.01]
H01L 31/065 Hierarchieinformationen		. . . the potential barriers being only of the graded gap type [5, 2006.01, 2012.01]
H01L 31/068 Hierarchieinformationen		. . . the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells [5, 2006.01, 2012.01]
H01L 31/0687 Hierarchieinformationen		. . . . Multiple junction or tandem solar cells [2012.01]
H01L 31/0693 Hierarchieinformationen		. . . . the devices including, apart from doping material or other impurities, only A_IIIB_V compounds, e.g. GaAs or InP solar cells [2012.01]
H01L 31/07 Hierarchieinformationen		. . . the potential barriers being only of the Schottky type [5, 2006.01, 2012.01]
H01L 31/072 Hierarchieinformationen		. . . the potential barriers being only of the PN heterojunction type [5, 2006.01, 2012.01]
H01L 31/0725 Hierarchieinformationen		. . . . Multiple junction or tandem solar cells [2012.01]
H01L 31/073 Hierarchieinformationen		. . . . comprising only A_IIB_VIcompound semiconductors, e.g. CdS/CdTe solar cells [2012.01]
H01L 31/0735 Hierarchieinformationen		. . . . comprising only A_IIIB_V compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells [2012.01]
H01L 31/074 Hierarchieinformationen		. . . . comprising a heterojunction with an element of Group IV of the Periodic System, e.g. ITO/Si, GaAs/Si or CdTe/Si solar cells [2012.01]
H01L 31/0745 Hierarchieinformationen		. . . . comprising a A_IVB_IV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells [2012.01]
H01L 31/0747 Hierarchieinformationen		. . . . . comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells [2012.01]
H01L 31/0749 Hierarchieinformationen		. . . . including a A_IB_IIIC_VI compound, e.g. CdS/CuInSe2 [CIS] heterojunction solar cells [2012.01]
H01L 31/075 Hierarchieinformationen		. . . the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells [5, 2006.01, 2012.01]
H01L 31/076 Hierarchieinformationen		. . . . Multiple junction or tandem solar cells [2012.01]
H01L 31/077 Hierarchieinformationen		. . . . the devices comprising monocrystalline or polycrystalline materials [2012.01]
H01L 31/078 Hierarchieinformationen		. . . including different types of potential barriers provided for in two or more of groups H01L 31/061-H01L 31/075 [5, 2006.01, 2012.01]
H01L 31/08 Hierarchieinformationen		. in which radiation controls flow of current through the device, e.g. photoresistors [2, 2006.01]
H01L 31/09 Hierarchieinformationen		. . Devices sensitive to infra-red, visible or ultra- violet radiation (H01L 31/101 takes precedence) [5, 2006.01]
H01L 31/10 Hierarchieinformationen		. . characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors [2, 2006.01]
H01L 31/101 Hierarchieinformationen		. . . Devices sensitive to infra-red, visible or ultra-violet radiation [5, 2006.01]
H01L 31/102 Hierarchieinformationen		. . . . characterised by only one potential barrier or surface barrier [5, 2006.01]
H01L 31/103 Hierarchieinformationen		. . . . . the potential barrier being of the PN homojunction type [5, 2006.01]
H01L 31/105 Hierarchieinformationen		. . . . . the potential barrier being of the PIN type [5, 2006.01]
H01L 31/107 Hierarchieinformationen		. . . . . the potential barrier working in avalanche mode, e.g. avalanche photodiode [5, 2006.01]
H01L 31/108 Hierarchieinformationen		. . . . . the potential barrier being of the Schottky type [5, 2006.01]
H01L 31/109 Hierarchieinformationen		. . . . . the potential barrier being of the PN heterojunction type [5, 2006.01]
H01L 31/11 Hierarchieinformationen		. . . . characterised by two potential barriers or surface barriers, e.g. bipolar phototransistor [5, 2006.01]
H01L 31/111 Hierarchieinformationen		. . . . characterised by at least three potential barriers, e.g. photothyristor [5, 2006.01]
H01L 31/112 Hierarchieinformationen		. . . . characterised by field-effect operation, e.g. junction field-effect photo- transistor [5, 2006.01]
H01L 31/113 Hierarchieinformationen		. . . . . being of the conductor-insulator- semiconductor type, e.g. metal- insulator-semiconductor field-effect transistor [5, 2006.01]
H01L 31/115 Hierarchieinformationen		. . . Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation [5, 2006.01]
H01L 31/117 Hierarchieinformationen		. . . . of the bulk effect radiation detector type, e.g. Ge-Li compensated PIN gamma-ray detectors [5, 2006.01]
H01L 31/118 Hierarchieinformationen		. . . . of the surface barrier or shallow PN junction detector type, e.g. surface barrier alpha-particle detectors [5, 2006.01]
H01L 31/119 Hierarchieinformationen		. . . . characterised by field-effect operation, e.g. MIS type detectors [5, 2006.01]
H01L 31/12 Hierarchieinformationen		. structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto (electroluminescent light sources per seH05B 33/00) [2, 5, 2006.01]
H01L 31/14 Hierarchieinformationen		. . the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers, image storage devices [2, 2006.01]
H01L 31/147 Hierarchieinformationen		. . . the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier [5, 2006.01]
H01L 31/153 Hierarchieinformationen		. . . . formed in, or on, a common substrate [5, 2006.01]
H01L 31/16 Hierarchieinformationen		. . the semiconductor device sensitive to radiation being controlled by the light source or sources [2, 2006.01]
H01L 31/167 Hierarchieinformationen		. . . the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier [5, 2006.01]
H01L 31/173 Hierarchieinformationen		. . . . formed in, or on, a common substrate [5, 2006.01]
H01L 31/18 Hierarchieinformationen		. Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof [2, 2006.01]
H01L 31/20 Hierarchieinformationen		. . such devices or parts thereof comprising amorphous semiconductor material [5, 2006.01]
H01L 33/00 Hierarchieinformationen		Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (H01L 51/50 takes precedence; devices consisting of a plurality of semiconductor components formed in or on a common substrate and including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission H01L 27/15; semiconductor lasers H01S 5/00) [2, 2006.01, 2010.01]
H01L 35/00 Hierarchieinformationen		Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00) [2, 2006.01]
H01L 37/00 Hierarchieinformationen		Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using Nernst-Ettinghausen effect; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00) [2, 2006.01]
H01L 39/00 Hierarchieinformationen		Devices using superconductivity or hyperconductivity; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00; superconductors characterised by the ceramic-forming technique or the ceramic composition C04B 35/00; superconductive or hyperconductive conductors, cables, or transmission lines H01B 12/00; superconductive coils or windings H01F; amplifiers using superconductivity H03F 19/00) [2, 4, 2006.01]
H01L 41/00 Hierarchieinformationen		Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (devices consisting of a plurality of solid-state components formed in or on a common substrate H01L 27/00) [2, 2006.01, 2013.01]
H01L 43/00 Hierarchieinformationen		Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00) [2, 2006.01]
H01L 45/00 Hierarchieinformationen		Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00; devices using superconductivity or hyperconductivity H01L 39/00; piezo-electric elements H01L 41/00; bulk negative resistance effect devices H01L 47/00) [2, 2006.01]
H01L 47/00 Hierarchieinformationen		Bulk negative resistance effect devices, e.g. Gunn-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00) [2, 2006.01]
H01L 49/00 Hierarchieinformationen		Solid state devices not provided for in groups H01L 27/00-H01L 47/00 and H01L 51/00 and not provided for in any other subclass; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof [2, 2006.01]
H01L 51/00 Hierarchieinformationen		Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof (devices consisting of a plurality of components formed in or on a common substrate H01L 27/28; thermoelectric devices using organic material H01L 35/00, H01L 37/00; piezo-electric, electrostrictive or magnetostrictive elements using organic material H01L 41/00) [6, 2006.01]
H01M Hierarchieinformationen		PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY [2]
H01P Hierarchieinformationen		WAVEGUIDES; RESONATORS, LINES OR OTHER DEVICES OF THE WAVEGUIDE TYPE (operating at optical frequencies G02B)
H01Q Hierarchieinformationen		AERIALS (radiators or aerials for microwave heating H05B 6/72)
H01R Hierarchieinformationen		ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS (switches, fuses H01H; coupling devices of the waveguide type H01P 5/00; switching arrangements for the supply or distribution of electric power H02B; installations of electric cables or lines, or of combined optical and electric cables or lines, or of auxiliary apparatus H02G; printed means for providing electric connections to or between printed circuits H05K)
H01S Hierarchieinformationen		DEVICES USING STIMULATED EMISSION
H01T Hierarchieinformationen		SPARK GAPS; OVERVOLTAGE ARRESTERS USING SPARK GAPS; SPARKING PLUGS; CORONA DEVICES; GENERATING IONS TO BE INTRODUCED INTO NON-ENCLOSED GASES (overvoltage protection circuits H02H)
H02 Hierarchieinformationen		GENERATION, CONVERSION, OR DISTRIBUTION OF ELECTRIC POWER
H03 Hierarchieinformationen		BASIC ELECTRONIC CIRCUITRY
H04 Hierarchieinformationen		ELECTRIC COMMUNICATION TECHNIQUE
H05 Hierarchieinformationen		ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
H99 Hierarchieinformationen		SUBJECT MATTER NOT OTHERWISE PROVIDED FOR IN THIS SECTION [2006.01]

Zu vergleichende IPC-Stelle: Es wurden im Verzeichnis noch keine IPC-Stellen für die Vergleichsansicht vorgemerkt. [Version , Sprache ]