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IPC-Stelle: H01L 31/00 Hauptgruppe [Version 2010.01, Sprache EN - English]

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Hierarchielinien

DEKLA-Gruppen

Symbol		Titel
A Hierarchieinformationen		SECTION A — HUMAN NECESSITIES
B Hierarchieinformationen		SECTION B — PERFORMING OPERATIONS; TRANSPORTING
C Hierarchieinformationen		SECTION C — CHEMISTRY; METALLURGY
D Hierarchieinformationen		SECTION D — TEXTILES; PAPER
E Hierarchieinformationen		SECTION E — FIXED CONSTRUCTIONS
F Hierarchieinformationen		SECTION F — MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
G Hierarchieinformationen		SECTION G — PHYSICS
H Hierarchieinformationen		SECTION H — ELECTRICITY
H01 Hierarchieinformationen		BASIC ELECTRIC ELEMENTS
H01B Hierarchieinformationen		CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING, OR DIELECTRIC PROPERTIES (selection for magnetic properties H01F 1/00; waveguides H01P; installation of cables or lines, or of combined optical and electric, cables or lines H02G)
H01C Hierarchieinformationen		RESISTORS
H01F Hierarchieinformationen		MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES (ceramics based on ferrites C04B 35/26; alloys C22C; thermomagnetic devices H01L 37/00; loudspeakers, microphones, gramophone pick-ups or like acoustic electromechanical transducers H04R) [2]
H01G Hierarchieinformationen		CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE (selection of specified materials as dielectric H01B 3/00; capacitors with potential-jump or surface barrier H01L 29/00)
H01H Hierarchieinformationen		ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES (contact cables H01B 7/10; electrolytic self-interrupters H01G 9/18; emergency protective circuit arrangements H02H; switching by electronic means without contact-making H03K 17/00)
H01J Hierarchieinformationen		ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; arc lamps with consumable electrodes H05B; particle accelerators H05H)
H01K Hierarchieinformationen		ELECTRIC INCANDESCENT LAMPS (details or apparatus or processes for manufacture applicable to both discharge devices and incandescent lamps H01J; light sources using a combination of incandescent and other types of light generation H01J 61/96, H05B 35/00; circuits therefor H05B)
H01L Hierarchieinformationen		SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR (use of semiconductor devices for measuring G01; resistors in general H01C; magnets, inductors, transformers H01F; capacitors in general H01G; electrolytic devices H01G 9/00; batteries, accumulators H01M; waveguides, resonators, or lines of the waveguide type H01P; line connectors, current collectors H01R; stimulated-emission devices H01S; electromechanical resonators H03H; loudspeakers, microphones, gramophone pick-ups or like acoustic electromechanical transducers H04R; electric light sources in general H05B; printed circuits, hybrid circuits, casings or constructional details of electrical apparatus, manufacture of assemblages of electrical components H05K; use of semiconductor devices in circuits having a particular application, see the subclass for the application) [2]
H01L 21/00 Hierarchieinformationen		Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof [2, 2006.01]
H01L 23/00 Hierarchieinformationen		Details of semiconductor or other solid state devices (H01L 25/00 takes precedence) [2, 5]
H01L 25/00 Hierarchieinformationen		Assemblies consisting of a plurality of individual semiconductor or other solid state devices (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00; assemblies of photoelectronic cells H01L 31/042) [2, 5]
H01L 27/00 Hierarchieinformationen		Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (details thereof H01L 23/00, H01L 29/00-H01L 51/00; assemblies consisting of a plurality of individual solid state devices H01L 25/00) [2, 2006.01]
H01L 29/00 Hierarchieinformationen		Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (H01L 31/00-H01L 47/00, H01L 51/05 take precedence; details other than of semiconductor bodies or of electrodes thereof H01L 23/00; devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00) [2, 6]
H01L 31/00 Hierarchieinformationen		Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (H01L 51/42 takes precedence; devices consisting of a plurality of solid state components formed in, or on, a common substrate, other than combinations of radiation-sensitive components with one or more electric light sources, H01L 27/00) [2, 6, 2006.01]
H01L 31/02 Hierarchieinformationen		. Details [2]
H01L 31/0203 Hierarchieinformationen		. . Containers; Encapsulations [5]
H01L 31/0216 Hierarchieinformationen		. . Coatings [5]
H01L 31/0224 Hierarchieinformationen		. . Electrodes [5]
H01L 31/0232 Hierarchieinformationen		. . Optical elements or arrangements associated with the device [5]
H01L 31/0236 Hierarchieinformationen		. . Special surface textures [5]
H01L 31/024 Hierarchieinformationen		. . Arrangements for cooling, heating, ventilating or temperature compensation [5]
H01L 31/0248 Hierarchieinformationen		. characterised by their semiconductor bodies [5]
H01L 31/0256 Hierarchieinformationen		. . characterised by the material [5]
H01L 31/0264 Hierarchieinformationen		. . . Inorganic materials [5]
H01L 31/0272 Hierarchieinformationen		. . . . Selenium or tellurium [5]
H01L 31/028 Hierarchieinformationen		. . . . including, apart from doping material or other impurities, only elements of the fourth group of the Periodic System [5]
H01L 31/0288 Hierarchieinformationen		. . . . . characterised by the doping material [5]
H01L 31/0296 Hierarchieinformationen		. . . . including, apart from doping material or other impurities, only A_IIB_VI compounds, e.g. CdS, ZnS, HgCdTe [5]
H01L 31/0304 Hierarchieinformationen		. . . . including, apart from doping materials or other impurities, only A_IIIB_V compounds [5]
H01L 31/0312 Hierarchieinformationen		. . . . including, apart from doping materials or other impurities, only A_IVB_IV compounds, e.g. SiC [5]
H01L 31/032 Hierarchieinformationen		. . . . including, apart from doping materials or other impurities, only compounds not provided for in groups H01L 31/0272-H01L 31/0312 [5]
H01L 31/0328 Hierarchieinformationen		. . . . including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L 31/0272-H01L 31/032 [5]
H01L 31/0336 Hierarchieinformationen		. . . . . in different semiconductor regions, e.g. Cu₂X/CdX hetero-junctions, X being an element of the sixth group of the Periodic System [5]
H01L 31/0352 Hierarchieinformationen		. . characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions [5]
H01L 31/036 Hierarchieinformationen		. . characterised by their crystalline structure or particular orientation of the crystalline planes [5]
H01L 31/0368 Hierarchieinformationen		. . . including polycrystalline semiconductors (H01L 31/0392 takes precedence) [5]
H01L 31/0376 Hierarchieinformationen		. . . including amorphous semiconductors (H01L 31/0392 takes precedence) [5]
H01L 31/0384 Hierarchieinformationen		. . . including other non-monocrystalline materials, e.g. semiconductor particles embedded in an insulating material (H01L 31/0392 takes precedence) [5]
H01L 31/0392 Hierarchieinformationen		. . . including thin films deposited on metallic or insulating substrates [5]
H01L 31/04 Hierarchieinformationen		. adapted as conversion devices [2]
H01L 31/042 Hierarchieinformationen		. . including a panel or array of photoelectric cells, e.g. solar cells [5]
H01L 31/045 Hierarchieinformationen		. . . collapsible or foldable [5]
H01L 31/048 Hierarchieinformationen		. . . encapsulated or with housing [5]
H01L 31/05 Hierarchieinformationen		. . . characterised by special interconnection means [5]
H01L 31/052 Hierarchieinformationen		. . . with cooling, light-reflecting or light- concentrating means [5]
H01L 31/055 Hierarchieinformationen		. . . . where light is absorbed and re-emitted at a different wavelength by the concentrator, e.g. by using luminescent material [5]
H01L 31/058 Hierarchieinformationen		. . . including means to utilise heat energy, e.g. hybrid systems, or a supplementary source of electric energy [5]
H01L 31/06 Hierarchieinformationen		. . characterised by at least one potential-jump barrier or surface barrier [2]
H01L 31/062 Hierarchieinformationen		. . . the potential barriers being only of the metal-insulator-semiconductor type [5]
H01L 31/065 Hierarchieinformationen		. . . the potential barriers being only of the graded gap type [5]
H01L 31/068 Hierarchieinformationen		. . . the potential barriers being only of the PN homojunction type [5]
H01L 31/07 Hierarchieinformationen		. . . the potential barriers being only of the Schottky type [5]
H01L 31/072 Hierarchieinformationen		. . . the potential barriers being only of the PN heterojunction type [5]
H01L 31/075 Hierarchieinformationen		. . . the potential barriers being only of the PIN type [5]
H01L 31/078 Hierarchieinformationen		. . . including potential barriers provided for in two or more of groups H01L 31/062-H01L 31/075 [5]
H01L 31/08 Hierarchieinformationen		. in which radiation controls flow of current through the device, e.g. photoresistors [2]
H01L 31/09 Hierarchieinformationen		. . Devices sensitive to infra-red, visible or ultra- violet radiation (H01L 31/101 takes precedence) [5]
H01L 31/10 Hierarchieinformationen		. . characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors [2]
H01L 31/101 Hierarchieinformationen		. . . Devices sensitive to infra-red, visible or ultra-violet radiation [5]
H01L 31/102 Hierarchieinformationen		. . . . characterised by only one potential barrier or surface barrier [5]
H01L 31/103 Hierarchieinformationen		. . . . . the potential barrier being of the PN homojunction type [5]
H01L 31/105 Hierarchieinformationen		. . . . . the potential barrier being of the PIN type [5]
H01L 31/107 Hierarchieinformationen		. . . . . the potential barrier working in avalanche mode, e.g. avalanche photodiode [5]
H01L 31/108 Hierarchieinformationen		. . . . . the potential barrier being of the Schottky type [5]
H01L 31/109 Hierarchieinformationen		. . . . . the potential barrier being of the PN heterojunction type [5]
H01L 31/11 Hierarchieinformationen		. . . . characterised by two potential barriers or surface barriers, e.g. bipolar phototransistor [5]
H01L 31/111 Hierarchieinformationen		. . . . characterised by at least three potential barriers, e.g. photothyristor [5]
H01L 31/112 Hierarchieinformationen		. . . . characterised by field-effect operation, e.g. junction field-effect photo- transistor [5]
H01L 31/113 Hierarchieinformationen		. . . . . being of the conductor-insulator- semiconductor type, e.g. metal- insulator-semiconductor field-effect transistor [5]
H01L 31/115 Hierarchieinformationen		. . . Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation [5]
H01L 31/117 Hierarchieinformationen		. . . . of the bulk effect radiation detector type, e.g. Ge-Li compensated PIN gamma-ray detectors [5]
H01L 31/118 Hierarchieinformationen		. . . . of the surface barrier or shallow PN junction detector type, e.g. surface barrier alpha-particle detectors [5]
H01L 31/119 Hierarchieinformationen		. . . . characterised by field-effect operation, e.g. MIS type detectors [5]
H01L 31/12 Hierarchieinformationen		. structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto (electroluminescent light sources per seH05B 33/00) [2, 5]
H01L 31/14 Hierarchieinformationen		. . the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers, image storage devices [2]
H01L 31/147 Hierarchieinformationen		. . . the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier [5]
H01L 31/153 Hierarchieinformationen		. . . . formed in, or on, a common substrate [5]
H01L 31/16 Hierarchieinformationen		. . the semiconductor device sensitive to radiation being controlled by the light source or sources [2]
H01L 31/167 Hierarchieinformationen		. . . the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier [5]
H01L 31/173 Hierarchieinformationen		. . . . formed in, or on, a common substrate [5]
H01L 31/18 Hierarchieinformationen		. Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof [2]
H01L 31/20 Hierarchieinformationen		. . such devices or parts thereof comprising amorphous semiconductor material [5]
H01L 33/00 Hierarchieinformationen		Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (H01L 51/50 takes precedence; devices consisting of a plurality of semiconductor components formed in or on a common substrate and including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission H01L 27/15; semiconductor lasers H01S 5/00) [2, 2006.01, 2010.01]
H01L 35/00 Hierarchieinformationen		Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00) [2]
H01L 37/00 Hierarchieinformationen		Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using Nernst-Ettinghausen effect; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00) [2]
H01L 39/00 Hierarchieinformationen		Devices using superconductivity or hyperconductivity; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00; superconductors characterised by the ceramic-forming technique or the ceramic composition C04B 35/00; superconductive or hyperconductive conductors, cables, or transmission lines H01B 12/00; superconductive coils or windings H01F; amplifiers using superconductivity H03F 19/00) [2, 4]
H01L 41/00 Hierarchieinformationen		Piezo-electric elements in general; Electrostrictive elements in general; Magnetostrictive elements in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00) [2]
H01L 43/00 Hierarchieinformationen		Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00) [2]
H01L 45/00 Hierarchieinformationen		Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00; devices using superconductivity or hyperconductivity H01L 39/00; piezo-electric elements H01L 41/00; bulk negative resistance effect devices H01L 47/00) [2]
H01L 47/00 Hierarchieinformationen		Bulk negative resistance effect devices, e.g. Gunn-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00) [2]
H01L 49/00 Hierarchieinformationen		Solid state devices not provided for in groups H01L 27/00-H01L 47/00 and H01L 51/00 and not provided for in any other subclass; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof [2, 2006.01]
H01L 51/00 Hierarchieinformationen		Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof (devices consisting of a plurality of components formed in or on a common substrate H01L 27/28; thermoelectric devices using organic material H01L 35/00, H01L 37/00; piezo-electric, electrostrictive or magnetostrictive elements using organic material H01L 41/00) [6, 2006.01]
H01M Hierarchieinformationen		PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY (electrochemical processes or apparatus in general C25; semiconductor or other solid state devices for converting light or heat into electrical energy H01L, e.g. H01L 31/00, H01L 35/00, H01L 37/00) [2]
H01P Hierarchieinformationen		WAVEGUIDES; RESONATORS, LINES OR OTHER DEVICES OF THE WAVEGUIDE TYPE (operating at optical frequencies G02B)
H01Q Hierarchieinformationen		AERIALS (microwave radiators for near-field therapeutic treatment A61N 5/04; apparatus for testing aerials or for measuring aerial characteristics G01R; waveguides H01P; radiators or aerials for microwave heating H05B 6/72)
H01R Hierarchieinformationen		ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS (switches, fuses H01H; coupling devices of the waveguide type H01P 5/00; switching arrangements for the supply or distribution of electric power H02B; installations of electric cables or lines, or of combined optical and electric cables or lines, or of auxiliary apparatus H02G; printed means for providing electric connections to or between printed circuits H05K)
H01S Hierarchieinformationen		DEVICES USING STIMULATED EMISSION
H01T Hierarchieinformationen		SPARK GAPS; OVERVOLTAGE ARRESTERS USING SPARK GAPS; SPARKING PLUGS; CORONA DEVICES; GENERATING IONS TO BE INTRODUCED INTO NON-ENCLOSED GASES (working of metal by the action of a high concentration of electric current B23H; welding, e.g. arc welding, electron beam welding or electrolytic welding, B23K; gas-filled discharge tubes with solid cathode H01J 17/00; electric arc lamps H05B 31/00)
H02 Hierarchieinformationen		GENERATION, CONVERSION, OR DISTRIBUTION OF ELECTRIC POWER
H03 Hierarchieinformationen		BASIC ELECTRONIC CIRCUITRY
H04 Hierarchieinformationen		ELECTRIC COMMUNICATION TECHNIQUE
H05 Hierarchieinformationen		ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
H99 Hierarchieinformationen		SUBJECT MATTER NOT OTHERWISE PROVIDED FOR IN THIS SECTION [2006.01]

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