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IPC-Stelle: H01L 29/00 Hauptgruppe [Version 7 (gültig ab 01.2000), Sprache EN - English]

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Hierarchielinien

DEKLA-Gruppen

Symbol		Titel
A Hierarchieinformationen		HUMAN NECESSITIES
B Hierarchieinformationen		PERFORMING OPERATIONS; TRANSPORTING
C Hierarchieinformationen		CHEMISTRY; METALLURGY
D Hierarchieinformationen		TEXTILES; PAPER
E Hierarchieinformationen		FIXED CONSTRUCTIONS
F Hierarchieinformationen		MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
G Hierarchieinformationen		PHYSICS
H Hierarchieinformationen		ELECTRICITY
H01 Hierarchieinformationen		BASIC ELECTRIC ELEMENTS
H01B Hierarchieinformationen		CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING, OR DIELECTRIC PROPERTIES (selection for magnetic properties H01F 1/00; waveguides H01P; installation of cables or lines, or of combined optical and electric, cables or lines H02G)
H01C Hierarchieinformationen		RESISTORS
H01F Hierarchieinformationen		MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES (ceramics based on ferrites C04B 35/26; alloys C22C; thermomagnetic devices H01L 37/00; loudspeakers, microphones, gramophone pick-ups or like acoustic electromechanical transducers H04R) [2]
H01G Hierarchieinformationen		CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE (selection of specified materials as dielectric H01B 3/00; capacitors with potential-jump or surface barrier H01L 29/00)
H01H Hierarchieinformationen		ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES (contact cables H01B 7/10; overvoltage protection resistors, resistive arresters H01C 7/12 , H01C 8/04; electrolytic self-interrupters H01G 9/18; switching devices of the waveguide type H01P; devices for interrupted current collection H01R 39/00; overvoltage arresters using spark gaps H01T 4/00; emergency protective circuit arrangements H02H; switching by electronic means without contact-making H03K 17/00)
H01J Hierarchieinformationen		ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; arc lamps with consumable electrodes H05B; particle accelerators H05H)
H01K Hierarchieinformationen		ELECTRIC INCANDESCENT LAMPS (details or apparatus or processes for manufacture applicable to both discharge devices and incandescent lamps H01J; light sources using a combination of incandescent and other types of light generation H01J 61/96 , H05B 35/00; circuits therefor H05B)
H01L Hierarchieinformationen		SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR (conveying systems for semiconductor wafers B65G 49/07; use of semiconductor devices for measuring G01; details of scanning-probe apparatus, in general G12B 21/00; resistors in general H01C; magnets, inductors, transformers H01F; capacitors in general H01G; electrolytic devices H01G 9/00; batteries, accumulators H01M; waveguides, resonators, or lines of the waveguide type H01P; line connectors, current collectors H01R; stimulated-emission devices H01S; electromechanical resonators H03H; loudspeakers, microphones, gramophone pick-ups or like acoustic electromechanical transducers H04R; electric light sources in general H05B; printed circuits, hybrid circuits, casings or constructional details of electrical apparatus, manufacture of assemblages of electrical components H05K; use of semiconductor devices in circuits having a particular application, see the subclass for the application) [2]
H01L 21/00 Hierarchieinformationen		Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (processes or apparatus peculiar to the manufacture or treatment of devices provided for in groups H01L 31/00 to H01L 49/00 or of parts thereof, see these groups; single-step processes covered by other subclasses, see the relevant subclasses, e.g. C23C , C30B; photomechanical production of textured or patterned surfaces, materials or originals therefor, apparatus specially adapted therefor, in general G03F) [2]
H01L 23/00 Hierarchieinformationen		Details of semiconductor or other solid state devices (H01L 25/00 takes precedence) [2, 5]
H01L 25/00 Hierarchieinformationen		Assemblies consisting of a plurality of individual semiconductor or other solid state devices (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00; assemblies of photoelectronic cells H01L 31/042; generators using solar cells or solar panels H02N 6/00; details of complete circuit assemblies provided for in another subclass, e.g. details of television receivers, see the relevant subclass, e.g. H04N; details of assemblies of electrical components in general H05K) [2, 5]
H01L 27/00 Hierarchieinformationen		Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (processes or apparatus adapted for the manufacture or treatment thereof or of parts thereof H01L 21/70 , H01L 31/00 to H01L 49/00; details thereof H01L 23/00 , H01L 29/00 to H01L 49/00; assemblies consisting of a plurality of individual solid state devices H01L 25/00; assemblies of electrical components in general H05K) [2]
H01L 29/00 Hierarchieinformationen		Semiconductor devices adapted for rectifying, amplifying, oscillating, or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (H01L 31/00 to H01L 47/00 , H01L 51/00 take precedence; processes or apparatus adapted for the manufacture or treatment thereof or of parts thereof H01L 21/00; details other than of semiconductor bodies or of electrodes thereof H01L 23/00; devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00; resistors in general H01C; capacitors in general H01G) [2, 6]
H01L 29/02 Hierarchieinformationen		. Semiconductor bodies [2]
H01L 29/04 Hierarchieinformationen		. . characterised by their crystalline structure, e.g. polycrystalline, cubic, particular orientation of crystalline planes (imperfections H01L 29/30) [2]
H01L 29/06 Hierarchieinformationen		. . characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions [2]
H01L 29/08 Hierarchieinformationen		. . . with semiconductor regions connected to an electrode carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes [2]
H01L 29/10 Hierarchieinformationen		. . . with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes [2]
H01L 29/12 Hierarchieinformationen		. . characterised by the materials of which they are formed [2]
H01L 29/15 Hierarchieinformationen		. . . Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices (such structures applied for the control of light G02F 1/017 , applied in semiconductor lasers H01S 5/34) [6]
H01L 29/16 Hierarchieinformationen		. . . including, apart from doping materials or other impurities, only elements of the fourth group of the Periodic System in uncombined form [2]
H01L 29/161 Hierarchieinformationen		. . . . including two or more of the elements provided for in group H01L 29/16 [2]
H01L 29/165 Hierarchieinformationen		. . . . . in different semiconductor regions [2]
H01L 29/167 Hierarchieinformationen		. . . . further characterised by the doping material [2]
H01L 29/18 Hierarchieinformationen		. . . Selenium or tellurium only, apart from doping materials or other impurities [2]
H01L 29/20 Hierarchieinformationen		. . . including, apart from doping materials or other impurities, only A_III_B_V_ compounds [2, 6]
H01L 29/201 Hierarchieinformationen		. . . . including two or more compounds [2]
H01L 29/205 Hierarchieinformationen		. . . . . in different semiconductor regions [2]
H01L 29/207 Hierarchieinformationen		. . . . further characterised by the doping material [2]
H01L 29/22 Hierarchieinformationen		. . . including, apart from doping materials or other impurities, only A_II_B_VI_ compounds [2]
H01L 29/221 Hierarchieinformationen		. . . . including two or more compounds [2]
H01L 29/225 Hierarchieinformationen		. . . . . in different semiconductor regions [2]
H01L 29/227 Hierarchieinformationen		. . . . further characterised by the doping material [2]
H01L 29/24 Hierarchieinformationen		. . . including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups H01L 29/16 , H01L 29/18 , H01L 29/20 , H01L 29/22 (including organic materials H01L 51/00) [2]
H01L 29/26 Hierarchieinformationen		. . . including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L 29/16 , H01L 29/18 , H01L 29/20 , H01L 29/22 , H01L 29/24 [2]
H01L 29/267 Hierarchieinformationen		. . . . in different semiconductor regions [2]
H01L 29/30 Hierarchieinformationen		. . characterised by physical imperfections; having polished or roughened surface [2]
H01L 29/32 Hierarchieinformationen		. . . the imperfections being within the semiconductor body [2]
H01L 29/34 Hierarchieinformationen		. . . the imperfections being on the surface [2]
H01L 29/36 Hierarchieinformationen		. . characterised by the concentration or distribution of impurities [2]
H01L 29/38 Hierarchieinformationen		. . characterised by combination of features provided for in two or more of the groups H01L 29/04 , H01L 29/06 , H01L 29/12 , H01L 29/30 , H01L 29/36 [2]
H01L 29/40 Hierarchieinformationen		. Electrodes [2]
H01L 29/41 Hierarchieinformationen		. . characterised by their shape, relative sizes or dispositions [6]
H01L 29/417 Hierarchieinformationen		. . . carrying the current to be rectified, amplified or switched [6]
H01L 29/423 Hierarchieinformationen		. . . not carrying the current to be rectified, amplified or switched [6]
H01L 29/43 Hierarchieinformationen		. . characterised by the materials of which they are formed [6]
H01L 29/45 Hierarchieinformationen		. . . Ohmic electrodes [6]
H01L 29/47 Hierarchieinformationen		. . . Schottky barrier electrodes [6]
H01L 29/49 Hierarchieinformationen		. . . Metal-insulator semiconductor electrodes [6]
H01L 29/51 Hierarchieinformationen		. . . . Insulating materials associated therewith [6]
H01L 29/66 Hierarchieinformationen		. Types of semiconductor device [2]
H01L 29/68 Hierarchieinformationen		. . controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched (H01L 29/96 takes precedence) [2]
H01L 29/70 Hierarchieinformationen		. . . Bipolar devices [2]
H01L 29/72 Hierarchieinformationen		. . . . Transistor-type devices, i.e. able to continuously respond to applied control signals [2]
H01L 29/73 Hierarchieinformationen		. . . . . Bipolar junction transistors [5]
H01L 29/732 Hierarchieinformationen		. . . . . . Vertical transistors [6]
H01L 29/735 Hierarchieinformationen		. . . . . . Lateral transistors [6]
H01L 29/737 Hierarchieinformationen		. . . . . . Hetero-junction transistors [6]
H01L 29/739 Hierarchieinformationen		. . . . . controlled by field effect [6]
H01L 29/74 Hierarchieinformationen		. . . . Thyristor-type devices, e.g. having four-zone regenerative action [2]
H01L 29/744 Hierarchieinformationen		. . . . . Gate-turn-off devices [6]
H01L 29/745 Hierarchieinformationen		. . . . . . with turn-off by field effect [6]
H01L 29/747 Hierarchieinformationen		. . . . . Bidirectional devices, e.g. triacs [2]
H01L 29/749 Hierarchieinformationen		. . . . . with turn-on by field effect [6]
H01L 29/76 Hierarchieinformationen		. . . Unipolar devices [2]
H01L 29/762 Hierarchieinformationen		. . . . Charge transfer devices [6]
H01L 29/765 Hierarchieinformationen		. . . . . Charge-coupled devices [6]
H01L 29/768 Hierarchieinformationen		. . . . . . with field effect produced by an insulated gate [6]
H01L 29/772 Hierarchieinformationen		. . . . Field-effect transistors [6]
H01L 29/775 Hierarchieinformationen		. . . . . with one-dimensional charge carrier gas channel, e.g. quantum wire FET [6]
H01L 29/778 Hierarchieinformationen		. . . . . with two-dimensional charge carrier gas channel, e.g. HEMT [6]
H01L 29/78 Hierarchieinformationen		. . . . . with field effect produced by an insulated gate [2]
H01L 29/786 Hierarchieinformationen		. . . . . . Thin-film transistors [6]
H01L 29/788 Hierarchieinformationen		. . . . . . with floating gate [5]
H01L 29/792 Hierarchieinformationen		. . . . . . with charge trapping gate insulator, e.g. MNOS-memory transistor [5]
H01L 29/80 Hierarchieinformationen		. . . . . with field effect produced by a PN or other rectifying junction gate [2]
H01L 29/808 Hierarchieinformationen		. . . . . . with a PN junction gate [5]
H01L 29/812 Hierarchieinformationen		. . . . . . with a Schottky gate [5]
H01L 29/82 Hierarchieinformationen		. . controllable by variation of the magnetic field applied to the device (H01L 29/96 takes precedence) [2, 6]
H01L 29/84 Hierarchieinformationen		. . controllable by variation of applied mechanical force, e.g. of pressure (H01L 29/96 takes precedence) [2, 6]
H01L 29/86 Hierarchieinformationen		. . controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched (H01L 29/96 takes precedence) [2]
H01L 29/8605 Hierarchieinformationen		. . . Resistors with PN junction [6]
H01L 29/861 Hierarchieinformationen		. . . Diodes [6]
H01L 29/862 Hierarchieinformationen		. . . . Point contact diodes [6]
H01L 29/864 Hierarchieinformationen		. . . . Transit-time diodes, e.g. IMPATT, TRAPATT diodes [6]
H01L 29/866 Hierarchieinformationen		. . . . Zener diodes [6]
H01L 29/868 Hierarchieinformationen		. . . . PIN diodes [6]
H01L 29/87 Hierarchieinformationen		. . . . Thyristor diodes, e.g. Shockley diodes, break-over diodes [6]
H01L 29/872 Hierarchieinformationen		. . . . Schottky diodes [6]
H01L 29/88 Hierarchieinformationen		. . . . Tunnel-effect diodes [2]
H01L 29/885 Hierarchieinformationen		. . . . . Esaki diodes [6]
H01L 29/92 Hierarchieinformationen		. . . Capacitors with potential-jump barrier or surface barrier [2]
H01L 29/93 Hierarchieinformationen		. . . . Variable-capacitance diodes, e.g. varactors [2]
H01L 29/94 Hierarchieinformationen		. . . . Metal-insulator-semiconductors, e.g. MOS [2]
H01L 29/96 Hierarchieinformationen		. . of a type covered by more than one of groups H01L 29/68 , H01L 29/82 , H01L 29/84 or H01L 29/86 [2]
H01L 31/00 Hierarchieinformationen		Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof (H01L 51/00 takes precedence; devices consisting of a plurality of solid state components formed in, or on, a common substrate, other than combinations of radiation-sensitive components with one or more electric light sources, H01L 27/00; roof covering aspects of energy collecting devices E04D 13/18; production of heat using solar heat F24J 2/00; measurement of X-radiation, gamma radiation, corpuscular radiation or cosmic radiation with semiconductor detectors G01T 1/24 , with resistance detectors G01T 1/26; measurement of neutron radiation with semiconductor detectors G01T 3/08; couplings of light guides with optoelectronic elements G02B 6/42; obtaining energy from radioactive sources G21H) [2, 6]
H01L 33/00 Hierarchieinformationen		Semiconductor devices with at least one potential-jump barrier or surface barrier adapted for light emission, e.g. infra-red; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof (couplings of light guides with optoelectronic elements G02B 6/42; semiconductor lasers H01S 5/00; electroluminescent light sources H05B 33/00) [2]
H01L 35/00 Hierarchieinformationen		Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00; refrigerating machines using electric or magnetic effects F25B 21/00; measuring temperature based on thermoelectric or thermomagnetic elements G01K 7/00; obtaining energy from radioactive sources G21H) [2]
H01L 37/00 Hierarchieinformationen		Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using Nernst-Ettinghausen effect; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00; measuring temperature based on thermoelectric or thermomagnetic elements G01K 7/00; selection of materials for magnetography, e.g. for Curie-point writing, G03G 5/00) [2]
H01L 39/00 Hierarchieinformationen		Devices using superconductivity or hyperconductivity; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00; superconductors characterised by the ceramic-forming technique or the ceramic composition C04B 35/00; superconductive or hyperconductive conductors, cables, or transmission lines H01B 12/00; superconductive coils or windings H01F; amplifiers using superconductivity H03F 19/00) [2, 4]
H01L 41/00 Hierarchieinformationen		Piezo-electric elements in general; Electrostrictive elements in general; Magnetostrictive elements in general; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00) [2]
H01L 43/00 Hierarchieinformationen		Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00; devices with potential-jump barrier or surface barrier controllable by variation of a magnetic field H01L 29/82) [2]
H01L 45/00 Hierarchieinformationen		Solid state devices adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00; devices using superconductivity or hyperconductivity H01L 39/00; piezo-electric elements H01L 41/00; bulk negative resistance effect devices H01L 47/00) [2]
H01L 47/00 Hierarchieinformationen		Bulk negative resistance effect devices, e.g. Gunn-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00) [2]
H01L 49/00 Hierarchieinformationen		Solid state devices not provided for in groups H01L 27/00 to H01L 47/00 and not provided for in any other subclass; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof (devices consisting of a plurality of solid state devices formed in or on a common substrate H01L 27/00) [2]
H01L 51/00 Hierarchieinformationen		Solid state devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, using organic materials as the active part, or using a combination of organic materials with other material as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof (processes or apparatus for treatment of inorganic semiconductor bodies involving formation or treatment of organic layers thereon H01L 21/00 , H01L 21/312 , H01L 21/47) [6]
H01L 101/00		Indexing scheme associated with group H01L 27/00 , relating to integrated circuits. The indexing code should be unlinked. [5]
H01L 101/00 Hierarchieinformationen		A_III_B_V_ integrated circuits [5]
H01M Hierarchieinformationen		PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY (electrochemical processes or apparatus in general C25; semiconductor or other solid state devices for converting light or heat into electrical energy H01L , e.g. H01L 31/00 , H01L 35/00 , H01L 37/00) [2]
H01P Hierarchieinformationen		WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE (operating at optical frequencies G02B; aerials H01Q; networks comprising lumped impedance elements H03H)
H01Q Hierarchieinformationen		AERIALS (microwave radiators for near-field therapeutic treatment A61N 5/04; apparatus for testing aerials or for measuring aerial characteristics G01R; waveguides H01P; radiators or aerials for microwave heating H05B 6/72)
H01R Hierarchieinformationen		ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS (switches, fuses H01H; coupling devices of the waveguide type H01P 5/00; switching arrangements for the supply or distribution of electric power H02B; installations of electric cables or lines, or of combined optical and electric cables or lines, or of auxiliary apparatus H02G; printed means for providing electric connections to or between printed circuits H05K)
H01S Hierarchieinformationen		DEVICES USING STIMULATED EMISSION
H01T Hierarchieinformationen		SPARK GAPS; OVERVOLTAGE ARRESTERS USING SPARK GAPS; SPARKING PLUGS; CORONA DEVICES; GENERATING IONS TO BE INTRODUCED INTO NON-ENCLOSED GASES (working of metal by the action of a high concentration of electric current B23H; welding, e.g. arc welding, electron beam welding or electrolytic welding, B23K; gas-filled discharge tubes with solid cathode H01J 17/00; electric arc lamps H05B 31/00)
H02 Hierarchieinformationen		GENERATION, CONVERSION, OR DISTRIBUTION OF ELECTRIC POWER
H03 Hierarchieinformationen		BASIC ELECTRONIC CIRCUITRY
H04 Hierarchieinformationen		ELECTRIC COMMUNICATION TECHNIQUE
H05 Hierarchieinformationen		ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR

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