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Symbol IPC-Stellen auswählen Titel
A
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HUMAN NECESSITIES
B
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PERFORMING OPERATIONS; TRANSPORTING
C
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CHEMISTRY; METALLURGY
D
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TEXTILES; PAPER
E
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FIXED CONSTRUCTIONS
F
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MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
G
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PHYSICS
H
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ELECTRICITY
H01
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BASIC ELECTRIC ELEMENTS
H01B
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CABLESCONDUCTORSINSULATORSSELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING, OR DIELECTRIC PROPERTIES (selection for magnetic properties H01F 1/00; waveguides H01P; installation of cables or lines, or of combined optical and electric, cables or lines H02G)
H01C
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RESISTORS
H01F
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MAGNETSINDUCTANCESTRANSFORMERSSELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES (ceramics based on ferrites C04B 35/26; alloys C22C; thermomagnetic devices H01L 37/00; loudspeakers, microphones, gramophone pick-ups or like acoustic electromechanical transducers H04R) [2]
H01G
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CAPACITORSCAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE (selection of specified materials as dielectric H01B 3/00; capacitors with potential-jump or surface barrier H01L 29/00)
H01H
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ELECTRIC SWITCHESRELAYSSELECTORSEMERGENCY PROTECTIVE DEVICES (contact cables H01B 7/10; overvoltage protection resistors, resistive arresters H01C 7/12 , H01C 8/04; electrolytic self-interrupters H01G 9/18; switching devices of the waveguide type H01P; devices for interrupted current collection H01R 39/00; overvoltage arresters using spark gaps H01T 4/00; emergency protective circuit arrangements H02H; switching by electronic means without contact-making H03K 17/00)
H01J
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ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; arc lamps with consumable electrodes H05B; particle accelerators H05H)
H01K
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ELECTRIC INCANDESCENT LAMPS (details or apparatus or processes for manufacture applicable to both discharge devices and incandescent lamps H01J; light sources using a combination of incandescent and other types of light generation H01J 61/96 , H05B 35/00; circuits therefor H05B)
H01L
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SEMICONDUCTOR DEVICESELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR (conveying systems for semiconductor wafers B65G 49/07; use of semiconductor devices for measuring G01; details of scanning-probe apparatus, in general G12B 21/00; resistors in general H01C; magnets, inductors, transformers H01F; capacitors in general H01G; electrolytic devices H01G 9/00; batteries, accumulators H01M; waveguides, resonators, or lines of the waveguide type H01P; line connectors, current collectors H01R; stimulated-emission devices H01S; electromechanical resonators H03H; loudspeakers, microphones, gramophone pick-ups or like acoustic electromechanical transducers H04R; electric light sources in general H05B; printed circuits, hybrid circuits, casings or constructional details of electrical apparatus, manufacture of assemblages of electrical components H05K; use of semiconductor devices in circuits having a particular application, see the subclass for the application) [2]
H01L 21/00
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Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (processes or apparatus peculiar to the manufacture or treatment of devices provided for in groups H01L 31/00 to H01L 49/00 or of parts thereof, see these groups; single-step processes covered by other subclasses, see the relevant subclasses, e.g. C23C , C30B; photomechanical production of textured or patterned surfaces, materials or originals therefor, apparatus specially adapted therefor, in general G03F) [2]
H01L 23/00
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Details of semiconductor or other solid state devices (H01L 25/00 takes precedence) [2, 5]
H01L 25/00
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Assemblies consisting of a plurality of individual semiconductor or other solid state devices (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00; assemblies of photoelectronic cells H01L 31/042; generators using solar cells or solar panels H02N 6/00; details of complete circuit assemblies provided for in another subclass, e.g. details of television receivers, see the relevant subclass, e.g. H04N; details of assemblies of electrical components in general H05K) [2, 5]
H01L 27/00
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Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (processes or apparatus adapted for the manufacture or treatment thereof or of parts thereof H01L 21/70 , H01L 31/00 to H01L 49/00; details thereof H01L 23/00 , H01L 29/00 to H01L 49/00; assemblies consisting of a plurality of individual solid state devices H01L 25/00; assemblies of electrical components in general H05K) [2]
H01L 27/01
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comprising only passive thin-film or thick-film elements formed on a common insulating substrate [3]
H01L 27/02
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including semiconductor components adapted for rectifying, oscillating, amplifying, switching or including integrated passive circuit elements with at least one potential-jump barrier or surface barrier [2]
H01L 27/04
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. . the substrate being a semiconductor body [2]
H01L 27/06
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. . . including a plurality of individual components in a non-repetitive configuration [2]
H01L 27/07
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. . . . the components having an active region in common [5]
H01L 27/08
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. . . including only semiconductor components of a single kind [2]
H01L 27/082
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. . . . including bipolar components only [5]
H01L 27/085
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. . . . including field-effect components only [5]
H01L 27/088
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. . . . . the components being field-effect transistors with insulated gate [5]
H01L 27/092
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. . . . . . complementary MIS field-effect transistors [5]
H01L 27/095
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. . . . . the components being Schottky barrier gate field-effect transistors [5]
H01L 27/098
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. . . . . the components being PN junction gate field-effect transistors [5]
H01L 27/10
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. . . including a plurality of individual components in a repetitive configuration [2]
H01L 27/102
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. . . . including bipolar components [5]
H01L 27/105
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. . . . including field-effect components [5]
H01L 27/108
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. . . . . Dynamic random access memory structures [5]
H01L 27/11
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. . . . . Static random access memory structures [5]
H01L 27/112
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. . . . . Read-only memory structures [5]
H01L 27/115
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. . . . . . Electrically programmable read-only memories [5]
H01L 27/118
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. . . . Masterslice integrated circuits [5]
H01L 27/12
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. . the substrate being other than a semiconductor body, e.g. an insulating body [2]
H01L 27/13
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. . . combined with thin-film or thick-film passive components [3]
H01L 27/14
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including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of a shorter wavelength, or corpuscular radiation of a shorter wavelength, or corpuscular radiation and adapted for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation (radiation-sensitive components structurally associated with one or more electric light sources only H01L 31/14; couplings of light guides with optoelectronic elements G02B 6/42) [2]
H01L 27/142
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. . Energy conversion devices [5]
H01L 27/144
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. . Devices controlled by radiation [5]
H01L 27/146
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. . . Imager structures [5]
H01L 27/148
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. . . . Charge coupled imagers [5]
H01L 27/15
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including semiconductor components with at least one potential-jump barrier or surface barrier adapted for light emission [2]
H01L 27/16
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including thermoelectric components with or without a junction of dissimilar materialsincluding thermomagnetic components (using the Peltier effect only for cooling of semiconductor or other solid state devices H01L 23/38) [2]
H01L 27/18
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including components exhibiting superconductivity [2]
H01L 27/20
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including piezo-electric componentsincluding electrostrictive componentsincluding magnetostrictive components [2, 7]
H01L 27/22
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including components using galvano-magnetic effects, e.g. Hall effectusing similar magnetic field effects [2]
H01L 27/24
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including solid state components for rectifying, amplifying, or switching without a potential-jump barrier or surface barrier [2]
H01L 27/26
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including bulk negative resistance effect components [2]
H01L 29/00
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Semiconductor devices adapted for rectifying, amplifying, oscillating, or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layerDetails of semiconductor bodies or of electrodes thereof (H01L 31/00 to H01L 47/00 , H01L 51/00 take precedence; processes or apparatus adapted for the manufacture or treatment thereof or of parts thereof H01L 21/00; details other than of semiconductor bodies or of electrodes thereof H01L 23/00; devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00; resistors in general H01C; capacitors in general H01G) [2, 6]
H01L 31/00
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Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiationProcesses or apparatus peculiar to the manufacture or treatment thereof or of parts thereofDetails thereof (H01L 51/00 takes precedence; devices consisting of a plurality of solid state components formed in, or on, a common substrate, other than combinations of radiation-sensitive components with one or more electric light sources, H01L 27/00; roof covering aspects of energy collecting devices E04D 13/18; production of heat using solar heat F24J 2/00; measurement of X-radiation, gamma radiation, corpuscular radiation or cosmic radiation with semiconductor detectors G01T 1/24 , with resistance detectors G01T 1/26; measurement of neutron radiation with semiconductor detectors G01T 3/08; couplings of light guides with optoelectronic elements G02B 6/42; obtaining energy from radioactive sources G21H) [2, 6]
H01L 33/00
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Semiconductor devices with at least one potential-jump barrier or surface barrier adapted for light emission, e.g. infra-redProcesses or apparatus peculiar to the manufacture or treatment thereof or of parts thereofDetails thereof (couplings of light guides with optoelectronic elements G02B 6/42; semiconductor lasers H01S 5/00; electroluminescent light sources H05B 33/00) [2]
H01L 35/00
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Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effectsProcesses or apparatus peculiar to the manufacture or treatment thereof or of parts thereofDetails thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00; refrigerating machines using electric or magnetic effects F25B 21/00; measuring temperature based on thermoelectric or thermomagnetic elements G01K 7/00; obtaining energy from radioactive sources G21H) [2]
H01L 37/00
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Thermoelectric devices without a junction of dissimilar materialsThermomagnetic devices, e.g. using Nernst-Ettinghausen effectProcesses or apparatus peculiar to the manufacture or treatment thereof or of parts thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00; measuring temperature based on thermoelectric or thermomagnetic elements G01K 7/00; selection of materials for magnetography, e.g. for Curie-point writing, G03G 5/00) [2]
H01L 39/00
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Devices using superconductivity or hyperconductivityProcesses or apparatus peculiar to the manufacture or treatment thereof or of parts thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00; superconductors characterised by the ceramic-forming technique or the ceramic composition C04B 35/00; superconductive or hyperconductive conductors, cables, or transmission lines H01B 12/00; superconductive coils or windings H01F; amplifiers using superconductivity H03F 19/00) [2, 4]
H01L 41/00
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Piezo-electric elements in generalElectrostrictive elements in generalMagnetostrictive elements in generalProcesses or apparatus peculiar to the manufacture or treatment thereof or of parts thereofDetails thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00) [2]
H01L 43/00
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Devices using galvano-magnetic or similar magnetic effectsProcesses or apparatus peculiar to the manufacture or treatment thereof or of parts thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00; devices with potential-jump barrier or surface barrier controllable by variation of a magnetic field H01L 29/82) [2]
H01L 45/00
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Solid state devices adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodesOvshinsky-effect devicesProcesses or apparatus peculiar to the manufacture or treatment thereof or of parts thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00; devices using superconductivity or hyperconductivity H01L 39/00; piezo-electric elements H01L 41/00; bulk negative resistance effect devices H01L 47/00) [2]
H01L 47/00
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Bulk negative resistance effect devices, e.g. Gunn-effect devicesProcesses or apparatus peculiar to the manufacture or treatment thereof or of parts thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00) [2]
H01L 49/00
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Solid state devices not provided for in groups H01L 27/00 to H01L 47/00 and not provided for in any other subclassProcesses or apparatus peculiar to the manufacture or treatment thereof or of parts thereof (devices consisting of a plurality of solid state devices formed in or on a common substrate H01L 27/00) [2]
H01L 51/00
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Solid state devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, using organic materials as the active part, or using a combination of organic materials with other material as the active partProcesses or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof (processes or apparatus for treatment of inorganic semiconductor bodies involving formation or treatment of organic layers thereon H01L 21/00 , H01L 21/312 , H01L 21/47) [6]
H01L 101/00
Indexing scheme associated with group H01L 27/00 , relating to integrated circuits. The indexing code should be unlinked. [5]
H01L 101/00
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A_III_B_V_ integrated circuits [5]
H01M
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PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY (electrochemical processes or apparatus in general C25; semiconductor or other solid state devices for converting light or heat into electrical energy H01L , e.g. H01L 31/00 , H01L 35/00 , H01L 37/00) [2]
H01P
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WAVEGUIDESRESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE (operating at optical frequencies G02B; aerials H01Q; networks comprising lumped impedance elements H03H)
H01Q
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AERIALS (microwave radiators for near-field therapeutic treatment A61N 5/04; apparatus for testing aerials or for measuring aerial characteristics G01R; waveguides H01P; radiators or aerials for microwave heating H05B 6/72)
H01R
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ELECTRICALLY-CONDUCTIVE CONNECTIONSSTRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTSCOUPLING DEVICESCURRENT COLLECTORS (switches, fuses H01H; coupling devices of the waveguide type H01P 5/00; switching arrangements for the supply or distribution of electric power H02B; installations of electric cables or lines, or of combined optical and electric cables or lines, or of auxiliary apparatus H02G; printed means for providing electric connections to or between printed circuits H05K)
H01S
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DEVICES USING STIMULATED EMISSION
H01T
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SPARK GAPSOVERVOLTAGE ARRESTERS USING SPARK GAPSSPARKING PLUGSCORONA DEVICESGENERATING IONS TO BE INTRODUCED INTO NON-ENCLOSED GASES (working of metal by the action of a high concentration of electric current B23H; welding, e.g. arc welding, electron beam welding or electrolytic welding, B23K; gas-filled discharge tubes with solid cathode H01J 17/00; electric arc lamps H05B 31/00)
H02
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GENERATION, CONVERSION, OR DISTRIBUTION OF ELECTRIC POWER
H03
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BASIC ELECTRONIC CIRCUITRY
H04
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ELECTRIC COMMUNICATION TECHNIQUE
H05
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ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR

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