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IPC-Stelle: H01L 27/01 1-Punkt Untergruppe [Version 2017.01, Sprache EN - English]

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Hierarchielinien

DEKLA-Gruppen

Symbol		Titel
A Hierarchieinformationen		HUMAN NECESSITIES
B Hierarchieinformationen		PERFORMING OPERATIONS; TRANSPORTING
C Hierarchieinformationen		CHEMISTRY; METALLURGY
D Hierarchieinformationen		TEXTILES; PAPER
E Hierarchieinformationen		FIXED CONSTRUCTIONS
F Hierarchieinformationen		MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
G Hierarchieinformationen		PHYSICS
H Hierarchieinformationen		ELECTRICITY
H01 Hierarchieinformationen		BASIC ELECTRIC ELEMENTS
H01B Hierarchieinformationen		CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES (selection for magnetic properties H01F 1/00; waveguides H01P)
H01C Hierarchieinformationen		RESISTORS
H01F Hierarchieinformationen		MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES [2]
H01G Hierarchieinformationen		CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE (selection of specified materials as dielectric H01B 3/00; capacitors with potential-jump or surface barrier H01L 29/00)
H01H Hierarchieinformationen		ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES (contact cables H01B 7/10; electrolytic self-interrupters H01G 9/18; emergency protective circuit arrangements H02H; switching by electronic means without contact-making H03K 17/00)
H01J Hierarchieinformationen		ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; arc lamps with consumable electrodes H05B; particle accelerators H05H)
H01K Hierarchieinformationen		ELECTRIC INCANDESCENT LAMPS (details or apparatus or processes for manufacture applicable to both discharge devices and incandescent lamps H01J; light sources using a combination of incandescent and other types of light generation H01J 61/96, H05B 35/00)
H01L Hierarchieinformationen		SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR (use of semiconductor devices for measuring G01; resistors in general H01C; magnets, inductors, transformers H01F; capacitors in general H01G; electrolytic devices H01G 9/00; batteries, accumulators H01M; waveguides, resonators, or lines of the waveguide type H01P; line connectors, current collectors H01R; stimulated-emission devices H01S; electromechanical resonators H03H; loudspeakers, microphones, gramophone pick-ups or like acoustic electromechanical transducers H04R; electric light sources in general H05B; printed circuits, hybrid circuits, casings or constructional details of electrical apparatus, manufacture of assemblages of electrical components H05K; use of semiconductor devices in circuits having a particular application, see the subclass for the application) [2]
H01L 21/00 Hierarchieinformationen		Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof [2, 2006.01]
H01L 23/00 Hierarchieinformationen		Details of semiconductor or other solid state devices (H01L 25/00 takes precedence) [2, 5, 2006.01]
H01L 25/00 Hierarchieinformationen		Assemblies consisting of a plurality of individual semiconductor or other solid state devices (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00; photovoltaic modules or arrays of photovoltaic cells H01L 31/042) [2, 5, 2006.01]
H01L 27/00 Hierarchieinformationen		Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (details thereof H01L 23/00, H01L 29/00-H01L 51/00; assemblies consisting of a plurality of individual solid state devices H01L 25/00) [2, 2006.01]
H01L 27/01 Hierarchieinformationen		. comprising only passive thin-film or thick-film elements formed on a common insulating substrate [3, 2006.01]
H01L 27/02 Hierarchieinformationen		. including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier [2, 2006.01]
H01L 27/04 Hierarchieinformationen		. . the substrate being a semiconductor body [2, 2006.01]
H01L 27/06 Hierarchieinformationen		. . . including a plurality of individual components in a non-repetitive configuration [2, 2006.01]
H01L 27/07 Hierarchieinformationen		. . . . the components having an active region in common [5, 2006.01]
H01L 27/08 Hierarchieinformationen		. . . including only semiconductor components of a single kind [2, 2006.01]
H01L 27/082 Hierarchieinformationen		. . . . including bipolar components only [5, 2006.01]
H01L 27/085 Hierarchieinformationen		. . . . including field-effect components only [5, 2006.01]
H01L 27/088 Hierarchieinformationen		. . . . . the components being field-effect transistors with insulated gate [5, 2006.01]
H01L 27/092 Hierarchieinformationen		. . . . . . complementary MIS field-effect transistors [5, 2006.01]
H01L 27/095 Hierarchieinformationen		. . . . . the components being Schottky barrier gate field-effect transistors [5, 2006.01]
H01L 27/098 Hierarchieinformationen		. . . . . the components being PN junction gate field-effect transistors [5, 2006.01]
H01L 27/10 Hierarchieinformationen		. . . including a plurality of individual components in a repetitive configuration [2, 2006.01]
H01L 27/102 Hierarchieinformationen		. . . . including bipolar components [5, 2006.01]
H01L 27/105 Hierarchieinformationen		. . . . including field-effect components [5, 2006.01]
H01L 27/108 Hierarchieinformationen		. . . . . Dynamic random access memory structures [5, 2006.01]
H01L 27/11 Hierarchieinformationen		. . . . . Static random access memory structures [5, 2006.01]
H01L 27/112 Hierarchieinformationen		. . . . . Read-only memory structures [5, 2006.01]
H01L 27/115 Hierarchieinformationen		. . . . . . Electrically programmable read-only memories; Multistep manufacturing processes therefor [5, 2006.01, 2017.01]
H01L 27/11502 Hierarchieinformationen		. . . . . . . with ferroelectric memory capacitors [2017.01]
H01L 27/11504 Hierarchieinformationen		. . . . . . . . characterised by the top-view layout [2017.01]
H01L 27/11507 Hierarchieinformationen		. . . . . . . . characterised by the memory core region [2017.01]
H01L 27/11509 Hierarchieinformationen		. . . . . . . . characterised by the peripheral circuit region [2017.01]
H01L 27/11512 Hierarchieinformationen		. . . . . . . . characterised by the boundary region between the core and peripheral circuit regions [2017.01]
H01L 27/11514 Hierarchieinformationen		. . . . . . . . characterised by the three-dimensional arrangements, e.g. with cells on different height levels [2017.01]
H01L 27/11517 Hierarchieinformationen		. . . . . . . with floating gate [2017.01]
H01L 27/11519 Hierarchieinformationen		. . . . . . . . characterised by the top-view layout [2017.01]
H01L 27/11521 Hierarchieinformationen		. . . . . . . . characterised by the memory core region (three-dimensional arrangements H01L 27/11551) [2017.01]
H01L 27/11524 Hierarchieinformationen		. . . . . . . . . with cell select transistors, e.g. NAND [2017.01]
H01L 27/11526 Hierarchieinformationen		. . . . . . . . characterised by the peripheral circuit region [2017.01]
H01L 27/11529 Hierarchieinformationen		. . . . . . . . . of memory regions comprising cell select transistors, e.g. NAND [2017.01]
H01L 27/11531 Hierarchieinformationen		. . . . . . . . . Simultaneous manufacturing of periphery and memory cells [2017.01]
H01L 27/11534 Hierarchieinformationen		. . . . . . . . . . including only one type of peripheral transistor [2017.01]
H01L 27/11536 Hierarchieinformationen		. . . . . . . . . . . with a control gate layer also being used as part of the peripheral transistor [2017.01]
H01L 27/11539 Hierarchieinformationen		. . . . . . . . . . . with an inter-gate dielectric layer also being used as part of the peripheral transistor [2017.01]
H01L 27/11541 Hierarchieinformationen		. . . . . . . . . . . with a floating-gate layer also being used as part of the peripheral transistor [2017.01]
H01L 27/11543 Hierarchieinformationen		. . . . . . . . . . . with a tunnel dielectric layer also being used as part of the peripheral transistor [2017.01]
H01L 27/11546 Hierarchieinformationen		. . . . . . . . . . including different types of peripheral transistor [2017.01]
H01L 27/11548 Hierarchieinformationen		. . . . . . . . characterised by the boundary region between the core and peripheral circuit regions [2017.01]
H01L 27/11551 Hierarchieinformationen		. . . . . . . . characterised by three-dimensional arrangements, e.g. with cells on different height levels [2017.01]
H01L 27/11553 Hierarchieinformationen		. . . . . . . . . with source and drain on different levels, e.g. with sloping channels [2017.01]
H01L 27/11556 Hierarchieinformationen		. . . . . . . . . . the channels comprising vertical portions, e.g. U-shaped channels [2017.01]
H01L 27/11558 Hierarchieinformationen		. . . . . . . . the control gate being a doped region, e.g. single-poly memory cells [2017.01]
H01L 27/1156 Hierarchieinformationen		. . . . . . . . the floating gate being an electrode shared by two or more components [2017.01]
H01L 27/11563 Hierarchieinformationen		. . . . . . . with charge-trapping gate insulators, e.g. MNOS or NROM [2017.01]
H01L 27/11565 Hierarchieinformationen		. . . . . . . . characterised by the top-view layout [2017.01]
H01L 27/11568 Hierarchieinformationen		. . . . . . . . characterised by the memory core region (three-dimensional arrangements H01L 27/11578) [2017.01]
H01L 27/1157 Hierarchieinformationen		. . . . . . . . . with cell select transistors, e.g. NAND [2017.01]
H01L 27/11573 Hierarchieinformationen		. . . . . . . . characterised by the peripheral circuit region [2017.01]
H01L 27/11575 Hierarchieinformationen		. . . . . . . . characterised by the boundary region between the core and peripheral circuit regions [2017.01]
H01L 27/11578 Hierarchieinformationen		. . . . . . . . characterised by three-dimensional arrangements, e.g. with cells on different height levels [2017.01]
H01L 27/1158 Hierarchieinformationen		. . . . . . . . . with source and drain on different levels, e.g. with sloping channels [2017.01]
H01L 27/11582 Hierarchieinformationen		. . . . . . . . . . the channels comprising vertical portions, e.g. U-shaped channels [2017.01]
H01L 27/11585 Hierarchieinformationen		. . . . . . . with the gate electrodes comprising a layer used for its ferroelectric memory properties, e.g. metal-ferroelectric-semiconductor [MFS] or metal-ferroelectric-metal-insulator-semiconductor [MFMIS] [2017.01]
H01L 27/11587 Hierarchieinformationen		. . . . . . . . characterised by the top-view layout [2017.01]
H01L 27/1159 Hierarchieinformationen		. . . . . . . . characterised by the memory core region [2017.01]
H01L 27/11592 Hierarchieinformationen		. . . . . . . . characterised by the peripheral circuit region [2017.01]
H01L 27/11595 Hierarchieinformationen		. . . . . . . . characterised by the boundary region between core and peripheral circuit regions [2017.01]
H01L 27/11597 Hierarchieinformationen		. . . . . . . . characterised by three-dimensional arrangements, e.g. cells on different height levels [2017.01]
H01L 27/118 Hierarchieinformationen		. . . . Masterslice integrated circuits [5, 2006.01]
H01L 27/12 Hierarchieinformationen		. . the substrate being other than a semiconductor body, e.g. an insulating body [2, 2006.01]
H01L 27/13 Hierarchieinformationen		. . . combined with thin-film or thick-film passive components [3, 2006.01]
H01L 27/14 Hierarchieinformationen		. including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation (radiation-sensitive components structurally associated with one or more electric light sources only H01L 31/14; couplings of light guides with optoelectronic elements G02B 6/42) [2, 2006.01]
H01L 27/142 Hierarchieinformationen		. . Energy conversion devices (photovoltaic modules or arrays of single photovoltaic cells comprising bypass diodes integrated or directly associated with the devices H01L 31/0443; photovoltaic modules composed of a plurality of thin film solar cells deposited on the same substrate H01L 31/046) [5, 2006.01, 2014.01]
H01L 27/144 Hierarchieinformationen		. . Devices controlled by radiation [5, 2006.01]
H01L 27/146 Hierarchieinformationen		. . . Imager structures [5, 2006.01]
H01L 27/148 Hierarchieinformationen		. . . . Charge coupled imagers [5, 2006.01]
H01L 27/15 Hierarchieinformationen		. including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission [2, 2006.01]
H01L 27/16 Hierarchieinformationen		. including thermoelectric components with or without a junction of dissimilar materials; including thermomagnetic components (using the Peltier effect only for cooling of semiconductor or other solid state devices H01L 23/38) [2, 2006.01]
H01L 27/18 Hierarchieinformationen		. including components exhibiting superconductivity [2, 2006.01]
H01L 27/20 Hierarchieinformationen		. including piezo-electric components; including electrostrictive components; including magnetostrictive components [2, 7, 2006.01]
H01L 27/22 Hierarchieinformationen		. including components using galvano-magnetic effects, e.g. Hall effect; using similar magnetic field effects [2, 2006.01]
H01L 27/24 Hierarchieinformationen		. including solid state components for rectifying, amplifying, or switching without a potential-jump barrier or surface barrier [2, 2006.01]
H01L 27/26 Hierarchieinformationen		. including bulk negative resistance effect components [2, 2006.01]
H01L 27/28 Hierarchieinformationen		. including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part [2006.01]
H01L 27/30 Hierarchieinformationen		. . with components specially adapted for sensing infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation; with components specially adapted for either the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation [2006.01]
H01L 27/32 Hierarchieinformationen		. . with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes [2006.01]
H01L 29/00 Hierarchieinformationen		Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (H01L 31/00-H01L 47/00, H01L 51/05 take precedence; details other than of semiconductor bodies or of electrodes thereof H01L 23/00; devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00) [2, 6, 2006.01]
H01L 31/00 Hierarchieinformationen		Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (H01L 51/42 takes precedence; devices consisting of a plurality of solid state components formed in, or on, a common substrate, other than combinations of radiation-sensitive components with one or more electric light sources, H01L 27/00) [2, 6, 2006.01]
H01L 33/00 Hierarchieinformationen		Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (H01L 51/50 takes precedence; devices consisting of a plurality of semiconductor components formed in or on a common substrate and including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission H01L 27/15; semiconductor lasers H01S 5/00) [2, 2006.01, 2010.01]
H01L 35/00 Hierarchieinformationen		Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00) [2, 2006.01]
H01L 37/00 Hierarchieinformationen		Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using Nernst-Ettinghausen effect; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00) [2, 2006.01]
H01L 39/00 Hierarchieinformationen		Devices using superconductivity or hyperconductivity; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00; superconductors characterised by the ceramic-forming technique or the ceramic composition C04B 35/00; superconductive or hyperconductive conductors, cables, or transmission lines H01B 12/00; superconductive coils or windings H01F; amplifiers using superconductivity H03F 19/00) [2, 4, 2006.01]
H01L 41/00 Hierarchieinformationen		Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (devices consisting of a plurality of solid-state components formed in or on a common substrate H01L 27/00) [2, 2006.01, 2013.01]
H01L 43/00 Hierarchieinformationen		Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00) [2, 2006.01]
H01L 45/00 Hierarchieinformationen		Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00; devices using superconductivity or hyperconductivity H01L 39/00; piezo-electric elements H01L 41/00; bulk negative resistance effect devices H01L 47/00) [2, 2006.01]
H01L 47/00 Hierarchieinformationen		Bulk negative resistance effect devices, e.g. Gunn-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00) [2, 2006.01]
H01L 49/00 Hierarchieinformationen		Solid state devices not provided for in groups H01L 27/00-H01L 47/00 and H01L 51/00 and not provided for in any other subclass; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof [2, 2006.01]
H01L 51/00 Hierarchieinformationen		Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof (devices consisting of a plurality of components formed in or on a common substrate H01L 27/28; thermoelectric devices using organic material H01L 35/00, H01L 37/00; piezo-electric, electrostrictive or magnetostrictive elements using organic material H01L 41/00) [6, 2006.01]
H01M Hierarchieinformationen		PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY [2]
H01P Hierarchieinformationen		WAVEGUIDES; RESONATORS, LINES OR OTHER DEVICES OF THE WAVEGUIDE TYPE (operating at optical frequencies G02B)
H01Q Hierarchieinformationen		AERIALS (radiators or aerials for microwave heating H05B 6/72)
H01R Hierarchieinformationen		ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS (switches, fuses H01H; coupling devices of the waveguide type H01P 5/00; switching arrangements for the supply or distribution of electric power H02B; installations of electric cables or lines, or of combined optical and electric cables or lines, or of auxiliary apparatus H02G; printed means for providing electric connections to or between printed circuits H05K)
H01S Hierarchieinformationen		DEVICES USING STIMULATED EMISSION
H01T Hierarchieinformationen		SPARK GAPS; OVERVOLTAGE ARRESTERS USING SPARK GAPS; SPARKING PLUGS; CORONA DEVICES; GENERATING IONS TO BE INTRODUCED INTO NON-ENCLOSED GASES (overvoltage protection circuits H02H)
H02 Hierarchieinformationen		GENERATION, CONVERSION, OR DISTRIBUTION OF ELECTRIC POWER
H03 Hierarchieinformationen		BASIC ELECTRONIC CIRCUITRY
H04 Hierarchieinformationen		ELECTRIC COMMUNICATION TECHNIQUE
H05 Hierarchieinformationen		ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
H99 Hierarchieinformationen		SUBJECT MATTER NOT OTHERWISE PROVIDED FOR IN THIS SECTION [2006.01]

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