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Symbol IPC-Stellen auswählen Titel
A
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SECTION A — HUMAN NECESSITIES
B
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SECTION B — PERFORMING OPERATIONSTRANSPORTING
C
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SECTION C — CHEMISTRYMETALLURGY
D
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SECTION D — TEXTILESPAPER
E
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SECTION E — FIXED CONSTRUCTIONS
F
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SECTION F — MECHANICAL ENGINEERINGLIGHTINGHEATINGWEAPONSBLASTING
G
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SECTION G — PHYSICS
H
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SECTION H — ELECTRICITY
H01
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BASIC ELECTRIC ELEMENTS
H01B
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CABLESCONDUCTORSINSULATORSSELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES (selection for magnetic properties H01F 1/00; waveguides H01P)
H01C
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RESISTORS
H01F
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MAGNETSINDUCTANCESTRANSFORMERSSELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES [2]
H01G
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CAPACITORSCAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE (selection of specified materials as dielectric H01B 3/00; capacitors with potential-jump or surface barrier H01L 29/00)
H01H
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ELECTRIC SWITCHESRELAYSSELECTORSEMERGENCY PROTECTIVE DEVICES (contact cables H01B 7/10; electrolytic self-interrupters H01G 9/18; emergency protective circuit arrangements H02H; switching by electronic means without contact-making H03K 17/00)
H01J
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ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; arc lamps with consumable electrodes H05B; particle accelerators H05H)
H01K
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ELECTRIC INCANDESCENT LAMPS (details or apparatus or processes for manufacture applicable to both discharge devices and incandescent lamps H01J; light sources using a combination of incandescent and other types of light generation H01J 61/96, H05B 35/00)
H01L
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SEMICONDUCTOR DEVICESELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR (use of semiconductor devices for measuring G01; resistors in general H01C; magnets, inductors, transformers H01F; capacitors in general H01G; electrolytic devices H01G 9/00; batteries, accumulators H01M; waveguides, resonators, or lines of the waveguide type H01P; line connectors, current collectors H01R; stimulated-emission devices H01S; electromechanical resonators H03H; loudspeakers, microphones, gramophone pick-ups or like acoustic electromechanical transducers H04R; electric light sources in general H05B; printed circuits, hybrid circuits, casings or constructional details of electrical apparatus, manufacture of assemblages of electrical components H05K; use of semiconductor devices in circuits having a particular application, see the subclass for the application) [2]
H01L 21/00
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Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof [2, 2006.01]
H01L 23/00
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Details of semiconductor or other solid state devices (H01L 25/00 takes precedence) [2, 5]
H01L 23/02
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ContainersSeals (H01L 23/12, H01L 23/34, H01L 23/48, H01L 23/552 take precedence) [2, 5]
H01L 23/04
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. . characterised by the shape [2]
H01L 23/043
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. . . the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body [5]
H01L 23/045
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. . . . the other leads having an insulating passage through the base [5]
H01L 23/047
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. . . . the other leads being parallel to the base [5]
H01L 23/049
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. . . . the other leads being perpendicular to the base [5]
H01L 23/051
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. . . . another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type [5]
H01L 23/053
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. . . the container being a hollow construction and having an insulating base as a mounting for the semiconductor body [5]
H01L 23/055
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. . . . the leads having a passage through the base [5]
H01L 23/057
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. . . . the leads being parallel to the base [5]
H01L 23/06
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. . characterised by the material of the container or its electrical properties [2]
H01L 23/08
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. . . the material being an electrical insulator, e.g. glass [2]
H01L 23/10
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. . characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container [2]
H01L 23/12
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Mountings, e.g. non-detachable insulating substrates [2]
H01L 23/13
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. . characterised by the shape [5]
H01L 23/14
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. . characterised by the material or its electrical properties [2]
H01L 23/15
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. . . Ceramic or glass substrates [5]
H01L 23/16
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Fillings or auxiliary members in containers, e.g. centering rings (H01L 23/42, H01L 23/552 take precedence) [2, 5]
H01L 23/18
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. . Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device [2]
H01L 23/20
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. . . gaseous at the normal operating temperature of the device [2]
H01L 23/22
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. . . liquid at the normal operating temperature of the device [2]
H01L 23/24
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. . . solid or gel, at the normal operating temperature of the device [2]
H01L 23/26
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. . . including materials for absorbing or reacting with moisture or other undesired substances [2]
H01L 23/28
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Encapsulation, e.g. encapsulating layers, coatings (H01L 23/552 takes precedence) [2, 5]
H01L 23/29
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. . characterised by the material [5]
H01L 23/31
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. . characterised by the arrangement [5]
H01L 23/32
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Holders for supporting the complete device in operation, i.e. detachable fixtures (H01L 23/40 takes precedence) [2, 5]
H01L 23/34
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Arrangements for cooling, heating, ventilating or temperature compensation [2, 5]
H01L 23/36
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. . Selection of materials, or shaping, to facilitate cooling or heating, e.g. heat sinks [2]
H01L 23/367
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. . . Cooling facilitated by shape of device [5]
H01L 23/373
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. . . Cooling facilitated by selection of materials for the device [5]
H01L 23/38
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. . Cooling arrangements using the Peltier effect [2]
H01L 23/40
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. . Mountings or securing means for detachable cooling or heating arrangements [2]
H01L 23/42
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. . Fillings or auxiliary members in containers selected or arranged to facilitate heating or cooling [2, 5]
H01L 23/427
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. . . Cooling by change of state, e.g. use of heat pipes [5]
H01L 23/433
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. . . Auxiliary members characterised by their shape, e.g. pistons [5]
H01L 23/44
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. . the complete device being wholly immersed in a fluid other than air (H01L 23/427 takes precedence) [2, 5]
H01L 23/46
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. . involving the transfer of heat by flowing fluids (H01L 23/42, H01L 23/44 take precedence) [2]
H01L 23/467
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. . . by flowing gases, e.g. air [5]
H01L 23/473
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. . . by flowing liquids [5]
H01L 23/48
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Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements [2]
H01L 23/482
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. . consisting of lead-in layers inseparably applied to the semiconductor body [5]
H01L 23/485
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. . . consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts [5]
H01L 23/488
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. . consisting of soldered or bonded constructions [5, 2006.01]
H01L 23/49
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. . . wire-like [5]
H01L 23/492
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. . . Bases or plates [5]
H01L 23/495
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. . . Lead-frames [5]
H01L 23/498
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. . . Leads on insulating substrates [5]
H01L 23/50
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. . for integrated circuit devices (H01L 23/482-H01L 23/498 take precedence) [2, 5]
H01L 23/52
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Arrangements for conducting electric current within the device in operation from one component to another [2]
H01L 23/522
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. . including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body [5]
H01L 23/525
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. . . with adaptable interconnections [5]
H01L 23/528
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. . . Layout of the interconnection structure [5]
H01L 23/532
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. . . characterised by the materials [5]
H01L 23/535
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. . including internal interconnections, e.g. cross-under constructions [5]
H01L 23/538
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. . the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates [5]
H01L 23/544
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Marks applied to semiconductor devices, e.g. registration marks, test patterns [5]
H01L 23/552
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Protection against radiation, e.g. light [5]
H01L 23/556
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. . against alpha rays [5]
H01L 23/58
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Structural electrical arrangements for semiconductor devices not otherwise provided for [5]
H01L 23/60
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. . Protection against electrostatic charges or discharges, e.g. Faraday shields [5]
H01L 23/62
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. . Protection against overcurrent or overload, e.g. fuses, shunts [5]
H01L 23/64
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. . Impedance arrangements [5]
H01L 23/66
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. . . High-frequency adaptations [5]
H01L 25/00
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Assemblies consisting of a plurality of individual semiconductor or other solid state devices (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00; assemblies of photoelectronic cells H01L 31/042) [2, 5]
H01L 27/00
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Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (details thereof H01L 23/00, H01L 29/00-H01L 51/00; assemblies consisting of a plurality of individual solid state devices H01L 25/00) [2, 2006.01]
H01L 29/00
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Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrierCapacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layerDetails of semiconductor bodies or of electrodes thereof (H01L 31/00-H01L 47/00, H01L 51/05 take precedence; details other than of semiconductor bodies or of electrodes thereof H01L 23/00; devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00) [2, 6]
H01L 31/00
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Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiationProcesses or apparatus specially adapted for the manufacture or treatment thereof or of parts thereofDetails thereof (H01L 51/42 takes precedence; devices consisting of a plurality of solid state components formed in, or on, a common substrate, other than combinations of radiation-sensitive components with one or more electric light sources, H01L 27/00) [2, 6, 2006.01]
H01L 33/00
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Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emissionProcesses or apparatus specially adapted for the manufacture or treatment thereof or of parts thereofDetails thereof (H01L 51/50 takes precedence; devices consisting of a plurality of semiconductor components formed in or on a common substrate and including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission H01L 27/15; semiconductor lasers H01S 5/00) [2, 2006.01, 2010.01]
H01L 35/00
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Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effectsProcesses or apparatus specially adapted for the manufacture or treatment thereof or of parts thereofDetails thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00) [2]
H01L 37/00
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Thermoelectric devices without a junction of dissimilar materialsThermomagnetic devices, e.g. using Nernst-Ettinghausen effectProcesses or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00) [2]
H01L 39/00
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Devices using superconductivity or hyperconductivityProcesses or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00; superconductors characterised by the ceramic-forming technique or the ceramic composition C04B 35/00; superconductive or hyperconductive conductors, cables, or transmission lines H01B 12/00; superconductive coils or windings H01F; amplifiers using superconductivity H03F 19/00) [2, 4]
H01L 41/00
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Piezo-electric devices in generalElectrostrictive devices in generalMagnetostrictive devices in generalProcesses or apparatus specially adapted for the manufacture or treatment thereof or of parts thereofDetails thereof (devices consisting of a plurality of solid-state components formed in or on a common substrate H01L 27/00) [2, 2013.01]
H01L 43/00
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Devices using galvano-magnetic or similar magnetic effectsProcesses or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00) [2]
H01L 45/00
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Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodesOvshinsky-effect devicesProcesses or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00; devices using superconductivity or hyperconductivity H01L 39/00; piezo-electric elements H01L 41/00; bulk negative resistance effect devices H01L 47/00) [2]
H01L 47/00
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Bulk negative resistance effect devices, e.g. Gunn-effect devicesProcesses or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00) [2]
H01L 49/00
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Solid state devices not provided for in groups H01L 27/00-H01L 47/00 and H01L 51/00 and not provided for in any other subclassProcesses or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof [2, 2006.01]
H01L 51/00
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Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active partProcesses or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof (devices consisting of a plurality of components formed in or on a common substrate H01L 27/28; thermoelectric devices using organic material H01L 35/00, H01L 37/00; piezo-electric, electrostrictive or magnetostrictive elements using organic material H01L 41/00) [6, 2006.01]
H01M
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PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY (electrochemical processes or apparatus in general C25; semiconductor or other solid state devices for converting light or heat into electrical energy H01L, e.g. H01L 31/00, H01L 35/00, H01L 37/00) [2]
H01P
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WAVEGUIDESRESONATORS, LINES OR OTHER DEVICES OF THE WAVEGUIDE TYPE (operating at optical frequencies G02B)
H01Q
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AERIALS (microwave radiators for near-field therapeutic treatment A61N 5/04; apparatus for testing aerials or for measuring aerial characteristics G01R; waveguides H01P; radiators or aerials for microwave heating H05B 6/72)
H01R
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ELECTRICALLY-CONDUCTIVE CONNECTIONSSTRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTSCOUPLING DEVICESCURRENT COLLECTORS (switches, fuses H01H; coupling devices of the waveguide type H01P 5/00; switching arrangements for the supply or distribution of electric power H02B; installations of electric cables or lines, or of combined optical and electric cables or lines, or of auxiliary apparatus H02G; printed means for providing electric connections to or between printed circuits H05K)
H01S
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DEVICES USING STIMULATED EMISSION
H01T
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SPARK GAPSOVERVOLTAGE ARRESTERS USING SPARK GAPSSPARKING PLUGSCORONA DEVICESGENERATING IONS TO BE INTRODUCED INTO NON-ENCLOSED GASES (working of metal by the action of a high concentration of electric current B23H; welding, e.g. arc welding, electron beam welding or electrolytic welding, B23K; gas-filled discharge tubes with solid cathode H01J 17/00; electric arc lamps H05B 31/00)
H02
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GENERATION, CONVERSION, OR DISTRIBUTION OF ELECTRIC POWER
H03
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BASIC ELECTRONIC CIRCUITRY
H04
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ELECTRIC COMMUNICATION TECHNIQUE
H05
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ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
H99
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SUBJECT MATTER NOT OTHERWISE PROVIDED FOR IN THIS SECTION [2006.01]

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