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IPC-Stelle: H01L 21/449 5-Punkt Untergruppe [Version 2006.01, Sprache EN - English]

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Symbol		Titel
A Hierarchieinformationen		SECTION A — HUMAN NECESSITIES
B Hierarchieinformationen		SECTION B — PERFORMING OPERATIONS; TRANSPORTING
C Hierarchieinformationen		SECTION C — CHEMISTRY; METALLURGY
D Hierarchieinformationen		SECTION D — TEXTILES; PAPER
E Hierarchieinformationen		SECTION E — FIXED CONSTRUCTIONS
F Hierarchieinformationen		SECTION F — MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
G Hierarchieinformationen		SECTION G — PHYSICS
H Hierarchieinformationen		SECTION H — ELECTRICITY
H01 Hierarchieinformationen		BASIC ELECTRIC ELEMENTS
H01B Hierarchieinformationen		CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING, OR DIELECTRIC PROPERTIES (selection for magnetic properties H01F 1/00; waveguides H01P; installation of cables or lines, or of combined optical and electric, cables or lines H02G)
H01C Hierarchieinformationen		RESISTORS
H01F Hierarchieinformationen		MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES (ceramics based on ferrites C04B 35/26; alloys C22C; thermomagnetic devices H01L 37/00; loudspeakers, microphones, gramophone pick-ups or like acoustic electromechanical transducers H04R) [2]
H01G Hierarchieinformationen		CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE (selection of specified materials as dielectric H01B 3/00; capacitors with potential-jump or surface barrier H01L 29/00)
H01H Hierarchieinformationen		ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES (contact cables H01B 7/10; overvoltage protection resistors, resistive arresters H01C 7/12, H01C 8/04; electrolytic self-interrupters H01G 9/18; switching devices of the waveguide type H01P; devices for interrupted current collection H01R 39/00; overvoltage arresters using spark gaps H01T 4/00; emergency protective circuit arrangements H02H; switching by electronic means without contact-making H03K 17/00)
H01J Hierarchieinformationen		ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; arc lamps with consumable electrodes H05B; particle accelerators H05H)
H01K Hierarchieinformationen		ELECTRIC INCANDESCENT LAMPS (details or apparatus or processes for manufacture applicable to both discharge devices and incandescent lamps H01J; light sources using a combination of incandescent and other types of light generation H01J 61/96, H05B 35/00; circuits therefor H05B)
H01L Hierarchieinformationen		SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR (conveying systems for semiconductor wafers B65G 49/07; use of semiconductor devices for measuring G01; details of scanning-probe apparatus, in general G12B 21/00; resistors in general H01C; magnets, inductors, transformers H01F; capacitors in general H01G; electrolytic devices H01G 9/00; batteries, accumulators H01M; waveguides, resonators, or lines of the waveguide type H01P; line connectors, current collectors H01R; stimulated-emission devices H01S; electromechanical resonators H03H; loudspeakers, microphones, gramophone pick-ups or like acoustic electromechanical transducers H04R; electric light sources in general H05B; printed circuits, hybrid circuits, casings or constructional details of electrical apparatus, manufacture of assemblages of electrical components H05K; use of semiconductor devices in circuits having a particular application, see the subclass for the application) [2]
H01L 21/00 Hierarchieinformationen		Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (processes or apparatus specially adapted for the manufacture or treatment of devices provided for in groups H01L 31/00-H01L 51/00 or of parts thereof, see these groups; single-step processes covered by other subclasses, see the relevant subclasses, e.g. C23C, C30B; photomechanical production of textured or patterned surfaces, materials or originals therefor, apparatus specially adapted therefor, in general G03F) [2, 2006.01]
H01L 21/02 Hierarchieinformationen		. Manufacture or treatment of semiconductor devices or of parts thereof [2, 2006.01]
H01L 21/027 Hierarchieinformationen		. . Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L 21/18 or H01L 21/34 [5]
H01L 21/033 Hierarchieinformationen		. . . comprising inorganic layers [5]
H01L 21/04 Hierarchieinformationen		. . the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer [2]
H01L 21/06 Hierarchieinformationen		. . . the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials [2]
H01L 21/08 Hierarchieinformationen		. . . . Preparation of the foundation plate [2]
H01L 21/10 Hierarchieinformationen		. . . . Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination [2]
H01L 21/103 Hierarchieinformationen		. . . . . Conversion of the selenium or tellurium to the conductive state [2]
H01L 21/105 Hierarchieinformationen		. . . . . Treatment of the surface of the selenium or tellurium layer after having been made conductive [2]
H01L 21/108 Hierarchieinformationen		. . . . . Provision of discrete insulating layers, i.e. non-genetic barrier layers [2]
H01L 21/12 Hierarchieinformationen		. . . . Application of an electrode to the exposed surface of the selenium or tellurium after the selenium or tellurium has been applied to the foundation plate [2]
H01L 21/14 Hierarchieinformationen		. . . . Treatment of the complete device, e.g. by electroforming to form a barrier [2]
H01L 21/145 Hierarchieinformationen		. . . . . Ageing [2]
H01L 21/16 Hierarchieinformationen		. . . the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide [2]
H01L 21/18 Hierarchieinformationen		. . . the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or A_IIIB_V compounds with or without impurities, e.g. doping materials [2, 6, 7]
H01L 21/20 Hierarchieinformationen		. . . . Deposition of semiconductor materials on a substrate, e.g. epitaxial growth [2]
H01L 21/203 Hierarchieinformationen		. . . . . using physical deposition, e.g. vacuum deposition, sputtering [2]
H01L 21/205 Hierarchieinformationen		. . . . . using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition [2]
H01L 21/208 Hierarchieinformationen		. . . . . using liquid deposition [2]
H01L 21/22 Hierarchieinformationen		. . . . Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regions; Redistribution of impurity materials, e.g. without introduction or removal of further dopant [2]
H01L 21/223 Hierarchieinformationen		. . . . . using diffusion into, or out of, a solid from or into a gaseous phase [2]
H01L 21/225 Hierarchieinformationen		. . . . . using diffusion into, or out of, a solid from or into a solid phase, e.g. a doped oxide layer [2]
H01L 21/228 Hierarchieinformationen		. . . . . using diffusion into, or out of, a solid from or into a liquid phase, e.g. alloy diffusion processes [2]
H01L 21/24 Hierarchieinformationen		. . . . Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body [2]
H01L 21/26 Hierarchieinformationen		. . . . Bombardment with wave or particle radiation (thermal treatment H01L 21/324) [2]
H01L 21/261 Hierarchieinformationen		. . . . . to produce a nuclear reaction transmuting chemical elements [6]
H01L 21/263 Hierarchieinformationen		. . . . . with high-energy radiation (H01L 21/261 takes precedence) [2, 6]
H01L 21/265 Hierarchieinformationen		. . . . . . producing ion implantation (ion-beam tubes for localised treatment H01J 37/30) [2]
H01L 21/266 Hierarchieinformationen		. . . . . . . using masks [5]
H01L 21/268 Hierarchieinformationen		. . . . . . using electromagnetic radiation, e.g. laser radiation [2]
H01L 21/28 Hierarchieinformationen		. . . . Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L 21/20-H01L 21/268 [2]
H01L 21/283 Hierarchieinformationen		. . . . . Deposition of conductive or insulating materials for electrodes [2]
H01L 21/285 Hierarchieinformationen		. . . . . . from a gas or vapour, e.g. condensation [2]
H01L 21/288 Hierarchieinformationen		. . . . . . from a liquid, e.g. electrolytic deposition [2]
H01L 21/30 Hierarchieinformationen		. . . . Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L 21/20-H01L 21/26 (manufacture of electrodes thereon H01L 21/28) [2]
H01L 21/301 Hierarchieinformationen		. . . . . to subdivide a semiconductor body into separate parts, e.g. making partitions (cutting H01L 21/304) [6]
H01L 21/302 Hierarchieinformationen		. . . . . to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting [2]
H01L 21/304 Hierarchieinformationen		. . . . . . Mechanical treatment, e.g. grinding, polishing, cutting [2]
H01L 21/306 Hierarchieinformationen		. . . . . . Chemical or electrical treatment, e.g. electrolytic etching (to form insulating layers H01L 21/31; after-treatment of insulating layers H01L 21/3105) [2]
H01L 21/3063 Hierarchieinformationen		. . . . . . . Electrolytic etching [6]
H01L 21/3065 Hierarchieinformationen		. . . . . . . Plasma etching; Reactive-ion etching [6]
H01L 21/308 Hierarchieinformationen		. . . . . . . using masks (H01L 21/3063, H01L 21/3065, take precedence) [2, 6]
H01L 21/31 Hierarchieinformationen		. . . . . to form insulating layers thereon, e.g. for masking or by using photolithographic techniques (layers forming electrodes H01L 21/28; encapsulating layers H01L 21/56); After-treatment of these layers; Selection of materials for these layers [2, 5]
H01L 21/3105 Hierarchieinformationen		. . . . . . After-treatment [5]
H01L 21/311 Hierarchieinformationen		. . . . . . . Etching the insulating layers [5]
H01L 21/3115 Hierarchieinformationen		. . . . . . . Doping the insulating layers [5]
H01L 21/312 Hierarchieinformationen		. . . . . . Organic layers, e.g. photoresist (H01L 21/3105, H01L 21/32 take precedence) [2, 5]
H01L 21/314 Hierarchieinformationen		. . . . . . Inorganic layers (H01L 21/3105, H01L 21/32 take precedence) [2, 5]
H01L 21/316 Hierarchieinformationen		. . . . . . . composed of oxides or glassy oxides or oxide-based glass [2]
H01L 21/318 Hierarchieinformationen		. . . . . . . composed of nitrides [2]
H01L 21/32 Hierarchieinformationen		. . . . . . using masks [2, 5]
H01L 21/3205 Hierarchieinformationen		. . . . . . Deposition of non-insulating-, e.g. conductive-, resistive-, layers, on insulating layers (arrangements for conducting electric current within the device H01L 23/52); After-treatment of these layers (manufacture of electrodes H01L 21/28) [5]
H01L 21/321 Hierarchieinformationen		. . . . . . . After-treatment [5]
H01L 21/3213 Hierarchieinformationen		. . . . . . . . Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer [6]
H01L 21/3215 Hierarchieinformationen		. . . . . . . . Doping the layers [5]
H01L 21/322 Hierarchieinformationen		. . . . . to modify their internal properties, e.g. to produce internal imperfections [2]
H01L 21/324 Hierarchieinformationen		. . . . . Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering (H01L 21/20-H01L 21/288, H01L 21/302-H01L 21/322 take precedence) [2]
H01L 21/326 Hierarchieinformationen		. . . . . Application of electric currents or fields, e.g. for electroforming (H01L 21/20-H01L 21/288, H01L 21/302-H01L 21/324 take precedence) [2]
H01L 21/328 Hierarchieinformationen		. . . . Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors [5]
H01L 21/329 Hierarchieinformationen		. . . . . the devices comprising one or two electrodes, e.g. diodes [5]
H01L 21/33 Hierarchieinformationen		. . . . . the devices comprising three or more electrodes [5]
H01L 21/331 Hierarchieinformationen		. . . . . . Transistors [5]
H01L 21/332 Hierarchieinformationen		. . . . . . Thyristors [5]
H01L 21/334 Hierarchieinformationen		. . . . Multistep processes for the manufacture of devices of the unipolar type [5]
H01L 21/335 Hierarchieinformationen		. . . . . Field-effect transistors [5]
H01L 21/336 Hierarchieinformationen		. . . . . . with an insulated gate [5]
H01L 21/337 Hierarchieinformationen		. . . . . . with a PN junction gate [5]
H01L 21/338 Hierarchieinformationen		. . . . . . with a Schottky gate [5]
H01L 21/339 Hierarchieinformationen		. . . . . Charge transfer devices [5, 6]
H01L 21/34 Hierarchieinformationen		. . . the devices having semiconductor bodies not provided for in groups H01L 21/06, H01L 21/16, and H01L 21/18 with or without impurities, e.g. doping materials [2]
H01L 21/36 Hierarchieinformationen		. . . . Deposition of semiconductor materials on a substrate, e.g. epitaxial growth [2]
H01L 21/363 Hierarchieinformationen		. . . . . using physical deposition, e.g. vacuum deposition, sputtering [2]
H01L 21/365 Hierarchieinformationen		. . . . . using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition [2]
H01L 21/368 Hierarchieinformationen		. . . . . using liquid deposition [2]
H01L 21/38 Hierarchieinformationen		. . . . Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regions [2]
H01L 21/383 Hierarchieinformationen		. . . . . using diffusion into, or out of, a solid from or into a gaseous phase [2]
H01L 21/385 Hierarchieinformationen		. . . . . using diffusion into, or out of, a solid from or into a solid phase, e.g. a doped oxide layer [2]
H01L 21/388 Hierarchieinformationen		. . . . . using diffusion into, or out of, a solid from or into a liquid phase, e.g. alloy diffusion processes [2]
H01L 21/40 Hierarchieinformationen		. . . . Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body [2]
H01L 21/42 Hierarchieinformationen		. . . . Bombardment with radiation [2]
H01L 21/423 Hierarchieinformationen		. . . . . with high-energy radiation [2]
H01L 21/425 Hierarchieinformationen		. . . . . . producing ion implantation (ion-beam tubes for localised treatment H01J 37/30) [2]
H01L 21/426 Hierarchieinformationen		. . . . . . . using masks [5]
H01L 21/428 Hierarchieinformationen		. . . . . . using electromagnetic radiation, e.g. laser radiation [2]
H01L 21/44 Hierarchieinformationen		. . . . Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L 21/36-H01L 21/428 [2]
H01L 21/441 Hierarchieinformationen		. . . . . Deposition of conductive or insulating materials for electrodes [2]
H01L 21/443 Hierarchieinformationen		. . . . . . from a gas or vapour, e.g. condensation [2]
H01L 21/445 Hierarchieinformationen		. . . . . . from a liquid, e.g. electrolytic deposition [2]
H01L 21/447 Hierarchieinformationen		. . . . . involving the application of pressure, e.g. thermo-compression bonding (H01L 21/607 takes precedence) [2]
H01L 21/449 Hierarchieinformationen		. . . . . involving the application of mechanical vibrations, e.g. ultrasonic vibrations [2]
H01L 21/46 Hierarchieinformationen		. . . . Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L 21/36-H01L 21/428 (manufacture of electrodes thereon H01L 21/44) [2]
H01L 21/461 Hierarchieinformationen		. . . . . to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting [2]
H01L 21/463 Hierarchieinformationen		. . . . . . Mechanical treatment, e.g. grinding, ultrasonic treatment [2]
H01L 21/465 Hierarchieinformationen		. . . . . . Chemical or electrical treatment, e.g. electrolytic etching (to form insulating layers H01L 21/469) [2]
H01L 21/467 Hierarchieinformationen		. . . . . . . using masks [2]
H01L 21/469 Hierarchieinformationen		. . . . . . to form insulating layers thereon, e.g. for masking or by using photolithographic techniques (layers forming electrodes H01L 21/44; encapsulating layers H01L 21/56); After-treatment of these layers [2, 5]
H01L 21/47 Hierarchieinformationen		. . . . . . . Organic layers, e.g. photoresist (H01L 21/475, H01L 21/4757 take precedence) [2, 5]
H01L 21/471 Hierarchieinformationen		. . . . . . . Inorganic layers (H01L 21/475, H01L 21/4757 take precedence) [2, 5]
H01L 21/473 Hierarchieinformationen		. . . . . . . . composed of oxides or glassy oxides or oxide-based glass [2]
H01L 21/475 Hierarchieinformationen		. . . . . . . using masks [2, 5]
H01L 21/4757 Hierarchieinformationen		. . . . . . . After-treatment [5]
H01L 21/4763 Hierarchieinformationen		. . . . . . Deposition of non-insulating-, e.g. conductive-, resistive-, layers on insulating layers; After-treatment of these layers (manufacture of electrodes H01L 21/28) [5]
H01L 21/477 Hierarchieinformationen		. . . . . Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering (H01L 21/36-H01L 21/449, H01L 21/461-H01L 21/475 take precedence) [2]
H01L 21/479 Hierarchieinformationen		. . . . . Application of electric currents or fields, e.g. for electroforming (H01L 21/36-H01L 21/449, H01L 21/461-H01L 21/477 take precedence) [2]
H01L 21/48 Hierarchieinformationen		. . . Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L 21/06-H01L 21/326 (containers, encapsulations, fillings, mountings per seH01L 23/00) [2]
H01L 21/50 Hierarchieinformationen		. . . Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L 21/06-H01L 21/326 [2]
H01L 21/52 Hierarchieinformationen		. . . . Mounting semiconductor bodies in containers [2]
H01L 21/54 Hierarchieinformationen		. . . . Providing fillings in containers, e.g. gas fillings [2]
H01L 21/56 Hierarchieinformationen		. . . . Encapsulations, e.g. encapsulating layers, coatings [2]
H01L 21/58 Hierarchieinformationen		. . . . Mounting semiconductor devices on supports [2]
H01L 21/60 Hierarchieinformationen		. . . . Attaching leads or other conductive members, to be used for carrying current to or from the device in operation [2]
H01L 21/603 Hierarchieinformationen		. . . . . involving the application of pressure, e.g. thermo-compression bonding (H01L 21/607 takes precedence) [2]
H01L 21/607 Hierarchieinformationen		. . . . . involving the application of mechanical vibrations, e.g. ultrasonic vibrations [2]
H01L 21/62 Hierarchieinformationen		. . the devices having no potential-jump barriers or surface barriers [2]
H01L 21/64 Hierarchieinformationen		. Manufacture or treatment of solid state devices other than semiconductor devices, or of parts thereof, not specially adapted for a single type of device provided for in groups H01L 31/00-H01L 51/00 [2, 2006.01]
H01L 21/66 Hierarchieinformationen		. Testing or measuring during manufacture or treatment (after manufacture G01R 31/26) [2]
H01L 21/67 Hierarchieinformationen		. Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components [2006.01]
H01L 21/673 Hierarchieinformationen		. . using specially adapted carriers [2006.01]
H01L 21/677 Hierarchieinformationen		. . for conveying, e.g. between different work stations [2006.01]
H01L 21/68 Hierarchieinformationen		. . for positioning, orientation or alignment (for conveying H01L 21/677) [2, 2006.01]
H01L 21/683 Hierarchieinformationen		. . for supporting or gripping (for conveying H01L 21/677, for positioning, orientation or alignment H01L 21/68) [2006.01]
H01L 21/687 Hierarchieinformationen		. . . using mechanical means, e.g. chucks, clamps or pinches [2006.01]
H01L 21/70 Hierarchieinformationen		. Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof (manufacture of assemblies consisting of preformed electrical components H05K 3/00, H05K 13/00) [2]
H01L 21/71 Hierarchieinformationen		. . Manufacture of specific parts of devices defined in group H01L 21/70 (H01L 21/28, H01L 21/44, H01L 21/48 take precedence) [6]
H01L 21/74 Hierarchieinformationen		. . . Making of buried regions of high impurity concentration, e.g. buried collector layers, internal connections [2]
H01L 21/76 Hierarchieinformationen		. . . Making of isolation regions between components [2]
H01L 21/761 Hierarchieinformationen		. . . . PN junctions [6]
H01L 21/762 Hierarchieinformationen		. . . . Dielectric regions [6]
H01L 21/763 Hierarchieinformationen		. . . . Polycrystalline semiconductor regions [6]
H01L 21/764 Hierarchieinformationen		. . . . Air gaps [6]
H01L 21/765 Hierarchieinformationen		. . . . by field-effect [6]
H01L 21/768 Hierarchieinformationen		. . . Applying interconnections to be used for carrying current between separate components within a device [6]
H01L 21/77 Hierarchieinformationen		. . Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate [6]
H01L 21/78 Hierarchieinformationen		. . . with subsequent division of the substrate into plural individual devices (cutting to change the surface-physical characteristics or shape of semiconductor bodies H01L 21/304) [2, 6]
H01L 21/782 Hierarchieinformationen		. . . . to produce devices, each consisting of a single circuit element (H01L 21/82 takes precedence) [6]
H01L 21/784 Hierarchieinformationen		. . . . . the substrate being a semiconductor body [6]
H01L 21/786 Hierarchieinformationen		. . . . . the substrate being other than a semiconductor body, e.g. insulating body [6]
H01L 21/82 Hierarchieinformationen		. . . . to produce devices, e.g. integrated circuits, each consisting of a plurality of components [2]
H01L 21/822 Hierarchieinformationen		. . . . . the substrate being a semiconductor, using silicon technology (H01L 21/8258 takes precedence) [6]
H01L 21/8222 Hierarchieinformationen		. . . . . . Bipolar technology [6]
H01L 21/8224 Hierarchieinformationen		. . . . . . . comprising a combination of vertical and lateral transistors [6]
H01L 21/8226 Hierarchieinformationen		. . . . . . . comprising merged transistor logic or integrated injection logic [6]
H01L 21/8228 Hierarchieinformationen		. . . . . . . Complementary devices, e.g. complementary transistors [6]
H01L 21/8229 Hierarchieinformationen		. . . . . . . Memory structures [6]
H01L 21/8232 Hierarchieinformationen		. . . . . . Field-effect technology [6]
H01L 21/8234 Hierarchieinformationen		. . . . . . . MIS technology [6]
H01L 21/8236 Hierarchieinformationen		. . . . . . . . Combination of enhancement and depletion transistors [6]
H01L 21/8238 Hierarchieinformationen		. . . . . . . . Complementary field-effect transistors, e.g. CMOS [6]
H01L 21/8239 Hierarchieinformationen		. . . . . . . . Memory structures [6]
H01L 21/8242 Hierarchieinformationen		. . . . . . . . . Dynamic random access memory structures (DRAM) [6]
H01L 21/8244 Hierarchieinformationen		. . . . . . . . . Static random access memory structures (SRAM) [6]
H01L 21/8246 Hierarchieinformationen		. . . . . . . . . Read-only memory structures (ROM) [6]
H01L 21/8247 Hierarchieinformationen		. . . . . . . . . . electrically-programmable (EPROM) [6]
H01L 21/8248 Hierarchieinformationen		. . . . . . Combination of bipolar and field-effect technology [6]
H01L 21/8249 Hierarchieinformationen		. . . . . . . Bipolar and MOS technology [6]
H01L 21/8252 Hierarchieinformationen		. . . . . the substrate being a semiconductor, using III-V technology (H01L 21/8258 takes precedence) [6]
H01L 21/8254 Hierarchieinformationen		. . . . . the substrate being a semiconductor, using II-VI technology (H01L 21/8258 takes precedence) [6]
H01L 21/8256 Hierarchieinformationen		. . . . . the substrate being a semiconductor, using technologies not covered by one of groups H01L 21/822, H01L 21/8252 or H01L 21/8254 (H01L 21/8258 takes precedence) [6]
H01L 21/8258 Hierarchieinformationen		. . . . . the substrate being a semiconductor, using a combination of technologies covered by H01L 21/822, H01L 21/8252, H01L 21/8254 or H01L 21/8256 [6]
H01L 21/84 Hierarchieinformationen		. . . . . the substrate being other than a semiconductor body, e.g. being an insulating body [2, 6]
H01L 21/86 Hierarchieinformationen		. . . . . . the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS [2, 6]
H01L 21/98 Hierarchieinformationen		. . Assembly of devices consisting of solid state components formed in or on a common substrate; Assembly of integrated circuit devices (H01L 21/50 takes precedence; assemblies H01L 25/00) [2, 5]
H01L 23/00 Hierarchieinformationen		Details of semiconductor or other solid state devices (H01L 25/00 takes precedence) [2, 5]
H01L 25/00 Hierarchieinformationen		Assemblies consisting of a plurality of individual semiconductor or other solid state devices (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00; assemblies of photoelectronic cells H01L 31/042; generators using solar cells or solar panels H02N 6/00; details of complete circuit assemblies provided for in another subclass, e.g. details of television receivers, see the relevant subclass, e.g. H04N; details of assemblies of electrical components in general H05K) [2, 5]
H01L 27/00 Hierarchieinformationen		Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof H01L 21/70, H01L 31/00-H01L 51/00; details thereof H01L 23/00, H01L 29/00-H01L 51/00; assemblies consisting of a plurality of individual solid state devices H01L 25/00; assemblies of electrical components in general H05K) [2, 2006.01]
H01L 29/00 Hierarchieinformationen		Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (H01L 31/00-H01L 47/00, H01L 51/05 take precedence; processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof H01L 21/00; details other than of semiconductor bodies or of electrodes thereof H01L 23/00; devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00; resistors in general H01C; capacitors in general H01G) [2, 6]
H01L 31/00 Hierarchieinformationen		Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (H01L 51/42 takes precedence; devices consisting of a plurality of solid state components formed in, or on, a common substrate, other than combinations of radiation-sensitive components with one or more electric light sources, H01L 27/00; roof covering aspects of energy collecting devices E04D 13/18; production of heat using solar heat F24J 2/00; measurement of X-radiation, gamma radiation, corpuscular radiation or cosmic radiation with semiconductor detectors G01T 1/24, with resistance detectors G01T 1/26; measurement of neutron radiation with semiconductor detectors G01T 3/08; couplings of light guides with optoelectronic elements G02B 6/42; obtaining energy from radioactive sources G21H) [2, 6, 2006.01]
H01L 33/00 Hierarchieinformationen		Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission, e.g. infra-red; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (H01L 51/50 takes precedence; devices consisting of a plurality of components formed in or on a common substrate H01L 27/00; couplings of light guides with optoelectronic elements G02B 6/42; semiconductor lasers H01S 5/00; electroluminescent light sources per seH05B 33/00) [2, 2006.01]
H01L 35/00 Hierarchieinformationen		Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00; refrigerating machines using electric or magnetic effects F25B 21/00; measuring temperature based on thermoelectric or thermomagnetic elements G01K 7/00; obtaining energy from radioactive sources G21H) [2]
H01L 37/00 Hierarchieinformationen		Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using Nernst-Ettinghausen effect; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00; measuring temperature based on thermoelectric or thermomagnetic elements G01K 7/00; selection of materials for magnetography, e.g. for Curie-point writing, G03G 5/00) [2]
H01L 39/00 Hierarchieinformationen		Devices using superconductivity or hyperconductivity; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00; superconductors characterised by the ceramic-forming technique or the ceramic composition C04B 35/00; superconductive or hyperconductive conductors, cables, or transmission lines H01B 12/00; superconductive coils or windings H01F; amplifiers using superconductivity H03F 19/00) [2, 4]
H01L 41/00 Hierarchieinformationen		Piezo-electric elements in general; Electrostrictive elements in general; Magnetostrictive elements in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00) [2]
H01L 43/00 Hierarchieinformationen		Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00; devices with potential-jump barrier or surface barrier controllable by variation of a magnetic field H01L 29/82) [2]
H01L 45/00 Hierarchieinformationen		Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00; devices using superconductivity or hyperconductivity H01L 39/00; piezo-electric elements H01L 41/00; bulk negative resistance effect devices H01L 47/00) [2]
H01L 47/00 Hierarchieinformationen		Bulk negative resistance effect devices, e.g. Gunn-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00) [2]
H01L 49/00 Hierarchieinformationen		Solid state devices not provided for in groups H01L 27/00-H01L 47/00 and H01L 51/00 and not provided for in any other subclass; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (devices consisting of a plurality of solid state devices formed in or on a common substrate H01L 27/00) [2, 2006.01]
H01L 51/00 Hierarchieinformationen		Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof (devices consisting of a plurality of components formed in or on a common substrate H01L 27/28; thermoelectric devices using organic material H01L 35/00, H01L 37/00; piezo-electric, electrostrictive or magnetostrictive elements using organic material H01L 41/00) [6, 2006.01]
H01M Hierarchieinformationen		PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY (electrochemical processes or apparatus in general C25; semiconductor or other solid state devices for converting light or heat into electrical energy H01L, e.g. H01L 31/00, H01L 35/00, H01L 37/00) [2]
H01P Hierarchieinformationen		WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE (operating at optical frequencies G02B; aerials H01Q; networks comprising lumped impedance elements H03H)
H01Q Hierarchieinformationen		AERIALS (microwave radiators for near-field therapeutic treatment A61N 5/04; apparatus for testing aerials or for measuring aerial characteristics G01R; waveguides H01P; radiators or aerials for microwave heating H05B 6/72)
H01R Hierarchieinformationen		ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS (switches, fuses H01H; coupling devices of the waveguide type H01P 5/00; switching arrangements for the supply or distribution of electric power H02B; installations of electric cables or lines, or of combined optical and electric cables or lines, or of auxiliary apparatus H02G; printed means for providing electric connections to or between printed circuits H05K)
H01S Hierarchieinformationen		DEVICES USING STIMULATED EMISSION
H01T Hierarchieinformationen		SPARK GAPS; OVERVOLTAGE ARRESTERS USING SPARK GAPS; SPARKING PLUGS; CORONA DEVICES; GENERATING IONS TO BE INTRODUCED INTO NON-ENCLOSED GASES (working of metal by the action of a high concentration of electric current B23H; welding, e.g. arc welding, electron beam welding or electrolytic welding, B23K; gas-filled discharge tubes with solid cathode H01J 17/00; electric arc lamps H05B 31/00)
H02 Hierarchieinformationen		GENERATION, CONVERSION, OR DISTRIBUTION OF ELECTRIC POWER
H03 Hierarchieinformationen		BASIC ELECTRONIC CIRCUITRY
H04 Hierarchieinformationen		ELECTRIC COMMUNICATION TECHNIQUE
H05 Hierarchieinformationen		ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
H99 Hierarchieinformationen		SUBJECT MATTER NOT OTHERWISE PROVIDED FOR IN THIS SECTION [2006.01]

Zu vergleichende IPC-Stelle: Es wurden im Verzeichnis noch keine IPC-Stellen für die Vergleichsansicht vorgemerkt. [Version , Sprache ]