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IPC-Stelle: H01L 21/44 4-Punkt Untergruppe [Version 2025.01 (aktuell), Sprache EN - English]

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Hierarchielinien

DEKLA-Gruppen

Symbol		Titel
A Hierarchieinformationen		HUMAN NECESSITIES
B Hierarchieinformationen		PERFORMING OPERATIONS; TRANSPORTING
C Hierarchieinformationen		CHEMISTRY; METALLURGY
D Hierarchieinformationen		TEXTILES; PAPER
E Hierarchieinformationen		FIXED CONSTRUCTIONS
F Hierarchieinformationen		MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
G Hierarchieinformationen		PHYSICS
H Hierarchieinformationen		ELECTRICITY
H01 Hierarchieinformationen		ELECTRIC ELEMENTS
H01B Hierarchieinformationen		CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES (selection for magnetic properties H01F 1/00; waveguides H01P)
H01C Hierarchieinformationen		RESISTORS
H01F Hierarchieinformationen		MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES [2]
H01G Hierarchieinformationen		CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE (selection of specified materials as dielectric H01B 3/00; capacitors having potential barriers H10D 1/62, H10K 10/10)
H01H Hierarchieinformationen		ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES (contact cables H01B 7/10; electrolytic self-interrupters H01G 9/18; emergency protective circuit arrangements H02H; switching by electronic means without contact-making H03K 17/00)
H01J Hierarchieinformationen		ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; arc lamps with consumable electrodes H05B; particle accelerators H05H)
H01K Hierarchieinformationen		ELECTRIC INCANDESCENT LAMPS (details, apparatus or processes for manufacture applicable to both discharge devices and incandescent lamps H01J; light sources using a combination of incandescent and other types of light generation H01J 61/96, H05B 35/00)
H01L Hierarchieinformationen		SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10 (use of semiconductor devices for measuring G01; resistors in general H01C; magnets, inductors or transformers H01F; capacitors in general H01G; electrolytic devices H01G 9/00; batteries or accumulators H01M; waveguides, resonators or lines of the waveguide type H01P; line connectors or current collectors H01R; stimulated-emission devices H01S; electromechanical resonators H03H; loudspeakers, microphones, gramophone pick-ups or like acoustic electromechanical transducers H04R; electric light sources in general H05B; printed circuits, hybrid circuits, casings or constructional details of electrical apparatus, manufacture of assemblages of electrical components H05K; use of semiconductor devices in circuits having a particular application, see the subclass for the application) [2]
H01L 21/00 Hierarchieinformationen		Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof [2, 2006.01]
H01L 21/02 Hierarchieinformationen		. Manufacture or treatment of semiconductor devices or of parts thereof [2, 2006.01]
H01L 21/027 Hierarchieinformationen		. . Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L 21/18 or H01L 21/34 [5, 2006.01]
H01L 21/033 Hierarchieinformationen		. . . comprising inorganic layers [5, 2006.01]
H01L 21/04 Hierarchieinformationen		. . the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer [2, 2006.01]
H01L 21/06		(transferred to H10D 48/04)
H01L 21/08		(transferred to H10D 48/042)
H01L 21/10		(transferred to H10D 48/043)
H01L 21/103		(transferred to H10D 48/044)
H01L 21/105		(transferred to H10D 48/045)
H01L 21/108		(transferred to H10D 48/046)
H01L 21/12		(transferred to H10D 48/047)
H01L 21/14		(transferred to H10D 48/048)
H01L 21/145		(transferred to H10D 48/049)
H01L 21/16		(transferred to H10D 48/07)
H01L 21/18 Hierarchieinformationen		. . . the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or A_IIIB_V compounds with or without impurities, e.g. doping materials [2, 6, 7, 2006.01]
H01L 21/20 Hierarchieinformationen		. . . . Deposition of semiconductor materials on a substrate, e.g. epitaxial growth [2, 2006.01]
H01L 21/203 Hierarchieinformationen		. . . . . using physical deposition, e.g. vacuum deposition, sputtering [2, 2006.01]
H01L 21/205 Hierarchieinformationen		. . . . . using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition [2, 2006.01]
H01L 21/208 Hierarchieinformationen		. . . . . using liquid deposition [2, 2006.01]
H01L 21/22 Hierarchieinformationen		. . . . Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regions; Redistribution of impurity materials, e.g. without introduction or removal of further dopant [2, 2006.01]
H01L 21/223 Hierarchieinformationen		. . . . . using diffusion into, or out of, a solid from or into a gaseous phase [2, 2006.01]
H01L 21/225 Hierarchieinformationen		. . . . . using diffusion into, or out of, a solid from or into a solid phase, e.g. a doped oxide layer [2, 2006.01]
H01L 21/228 Hierarchieinformationen		. . . . . using diffusion into, or out of, a solid from or into a liquid phase, e.g. alloy diffusion processes [2, 2006.01]
H01L 21/24 Hierarchieinformationen		. . . . Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body [2, 2006.01]
H01L 21/26 Hierarchieinformationen		. . . . Bombardment with wave or particle radiation [2, 2006.01]
H01L 21/261 Hierarchieinformationen		. . . . . to produce a nuclear reaction transmuting chemical elements [6, 2006.01]
H01L 21/263 Hierarchieinformationen		. . . . . with high-energy radiation (H01L 21/261 takes precedence) [2, 6, 2006.01]
H01L 21/265 Hierarchieinformationen		. . . . . . producing ion implantation [2, 2006.01]
H01L 21/266 Hierarchieinformationen		. . . . . . . using masks [5, 2006.01]
H01L 21/268 Hierarchieinformationen		. . . . . . using electromagnetic radiation, e.g. laser radiation [2, 2006.01]
H01L 21/28 Hierarchieinformationen		. . . . Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L 21/20-H01L 21/268 [2, 2006.01, 2025.01]
H01L 21/283 Hierarchieinformationen		. . . . . Deposition of conductive or insulating materials for electrodes [2, 2006.01]
H01L 21/285 Hierarchieinformationen		. . . . . . from a gas or vapour, e.g. condensation [2, 2006.01]
H01L 21/288 Hierarchieinformationen		. . . . . . from a liquid, e.g. electrolytic deposition [2, 2006.01]
H01L 21/30 Hierarchieinformationen		. . . . Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L 21/20-H01L 21/26 (manufacture of electrodes thereon H01L 21/28, H10D 64/01) [2, 2006.01]
H01L 21/301 Hierarchieinformationen		. . . . . to subdivide a semiconductor body into separate parts, e.g. making partitions (cutting H01L 21/304) [6, 2006.01]
H01L 21/302 Hierarchieinformationen		. . . . . to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting [2, 2006.01]
H01L 21/304 Hierarchieinformationen		. . . . . . Mechanical treatment, e.g. grinding, polishing, cutting [2, 2006.01]
H01L 21/306 Hierarchieinformationen		. . . . . . Chemical or electrical treatment, e.g. electrolytic etching (to form insulating layers H01L 21/31; after-treatment of insulating layers H01L 21/3105) [2, 2006.01]
H01L 21/3063 Hierarchieinformationen		. . . . . . . Electrolytic etching [6, 2006.01]
H01L 21/3065 Hierarchieinformationen		. . . . . . . Plasma etching; Reactive-ion etching [6, 2006.01]
H01L 21/308 Hierarchieinformationen		. . . . . . . using masks (H01L 21/3063, H01L 21/3065, take precedence) [2, 6, 2006.01]
H01L 21/31 Hierarchieinformationen		. . . . . to form insulating layers thereon, e.g. for masking or by using photolithographic techniques (encapsulating layers H01L 21/56); After-treatment of these layers; Selection of materials for these layers [2, 5, 2006.01]
H01L 21/3105 Hierarchieinformationen		. . . . . . After-treatment [5, 2006.01]
H01L 21/311 Hierarchieinformationen		. . . . . . . Etching the insulating layers [5, 2006.01]
H01L 21/3115 Hierarchieinformationen		. . . . . . . Doping the insulating layers [5, 2006.01]
H01L 21/312 Hierarchieinformationen		. . . . . . Organic layers, e.g. photoresist (H01L 21/3105, H01L 21/32 take precedence) [2, 5, 2006.01]
H01L 21/314 Hierarchieinformationen		. . . . . . Inorganic layers (H01L 21/3105, H01L 21/32 take precedence) [2, 5, 2006.01]
H01L 21/316 Hierarchieinformationen		. . . . . . . composed of oxides or glassy oxides or oxide-based glass [2, 2006.01]
H01L 21/318 Hierarchieinformationen		. . . . . . . composed of nitrides [2, 2006.01]
H01L 21/32 Hierarchieinformationen		. . . . . . using masks [2, 5, 2006.01]
H01L 21/3205 Hierarchieinformationen		. . . . . . Deposition of non-insulating-, e.g. conductive- or resistive-, layers, on insulating layers; After-treatment of these layers (manufacture of electrodes H01L 21/28, H10D 64/01) [5, 2006.01]
H01L 21/321 Hierarchieinformationen		. . . . . . . After-treatment [5, 2006.01]
H01L 21/3213 Hierarchieinformationen		. . . . . . . . Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer [6, 2006.01]
H01L 21/3215 Hierarchieinformationen		. . . . . . . . Doping the layers [5, 2006.01]
H01L 21/322 Hierarchieinformationen		. . . . . to modify their internal properties, e.g. to produce internal imperfections [2, 2006.01]
H01L 21/324 Hierarchieinformationen		. . . . . Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering (H01L 21/20-H01L 21/288, H01L 21/302-H01L 21/322 take precedence) [2, 2006.01]
H01L 21/326 Hierarchieinformationen		. . . . . Application of electric currents or fields, e.g. for electroforming (H01L 21/20-H01L 21/288, H01L 21/302-H01L 21/324 take precedence) [2, 2006.01]
H01L 21/328		(transferred to H10D 48/01)
H01L 21/329		(transferred to H10D 8/01; H10D 48/01)
H01L 21/33		(transferred to H10D 48/01)
H01L 21/331		(transferred to H10D 10/01; H10D 12/01)
H01L 21/332		(transferred to H10D 18/01)
H01L 21/334		(transferred to H10D 48/01)
H01L 21/335		(transferred to H10D 30/01)
H01L 21/336		(transferred to H10D 30/01)
H01L 21/337		(transferred to H10D 30/01)
H01L 21/338		(transferred to H10D 30/01)
H01L 21/339		(transferred to H10D 44/01)
H01L 21/34 Hierarchieinformationen		. . . the devices having semiconductor bodies not provided for in groups H01L 21/18, H10D 48/04 and H10D 48/07, with or without impurities, e.g. doping materials [2, 2006.01, 2025.01]
H01L 21/36 Hierarchieinformationen		. . . . Deposition of semiconductor materials on a substrate, e.g. epitaxial growth [2, 2006.01]
H01L 21/363 Hierarchieinformationen		. . . . . using physical deposition, e.g. vacuum deposition, sputtering [2, 2006.01]
H01L 21/365 Hierarchieinformationen		. . . . . using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition [2, 2006.01]
H01L 21/368 Hierarchieinformationen		. . . . . using liquid deposition [2, 2006.01]
H01L 21/38 Hierarchieinformationen		. . . . Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regions [2, 2006.01]
H01L 21/383 Hierarchieinformationen		. . . . . using diffusion into, or out of, a solid from or into a gaseous phase [2, 2006.01]
H01L 21/385 Hierarchieinformationen		. . . . . using diffusion into, or out of, a solid from or into a solid phase, e.g. a doped oxide layer [2, 2006.01]
H01L 21/388 Hierarchieinformationen		. . . . . using diffusion into, or out of, a solid from or into a liquid phase, e.g. alloy diffusion processes [2, 2006.01]
H01L 21/40 Hierarchieinformationen		. . . . Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body [2, 2006.01]
H01L 21/42 Hierarchieinformationen		. . . . Bombardment with radiation [2, 2006.01]
H01L 21/423 Hierarchieinformationen		. . . . . with high-energy radiation [2, 2006.01]
H01L 21/425 Hierarchieinformationen		. . . . . . producing ion implantation [2, 2006.01]
H01L 21/426 Hierarchieinformationen		. . . . . . . using masks [5, 2006.01]
H01L 21/428 Hierarchieinformationen		. . . . . . using electromagnetic radiation, e.g. laser radiation [2, 2006.01]
H01L 21/44 Hierarchieinformationen		. . . . Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L 21/36-H01L 21/428 [2, 2006.01, 2025.01]
H01L 21/441 Hierarchieinformationen		. . . . . Deposition of conductive or insulating materials for electrodes [2, 2006.01]
H01L 21/443 Hierarchieinformationen		. . . . . . from a gas or vapour, e.g. condensation [2, 2006.01]
H01L 21/445 Hierarchieinformationen		. . . . . . from a liquid, e.g. electrolytic deposition [2, 2006.01]
H01L 21/447 Hierarchieinformationen		. . . . . involving the application of pressure, e.g. thermo-compression bonding (H01L 21/607 takes precedence) [2, 2006.01]
H01L 21/449 Hierarchieinformationen		. . . . . involving the application of mechanical vibrations, e.g. ultrasonic vibrations [2, 2006.01]
H01L 21/46 Hierarchieinformationen		. . . . Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L 21/36-H01L 21/428 (manufacture of electrodes thereon H01L 21/44, H10D 64/01) [2, 2006.01]
H01L 21/461 Hierarchieinformationen		. . . . . to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting [2, 2006.01]
H01L 21/463 Hierarchieinformationen		. . . . . . Mechanical treatment, e.g. grinding, ultrasonic treatment [2, 2006.01]
H01L 21/465 Hierarchieinformationen		. . . . . . Chemical or electrical treatment, e.g. electrolytic etching (to form insulating layers H01L 21/469) [2, 2006.01]
H01L 21/467 Hierarchieinformationen		. . . . . . . using masks [2, 2006.01]
H01L 21/469 Hierarchieinformationen		. . . . . . to form insulating layers thereon, e.g. for masking or by using photolithographic techniques (encapsulating layers H01L 21/56); After-treatment of these layers [2, 5, 2006.01]
H01L 21/47 Hierarchieinformationen		. . . . . . . Organic layers, e.g. photoresist (H01L 21/475, H01L 21/4757 take precedence) [2, 5, 2006.01]
H01L 21/471 Hierarchieinformationen		. . . . . . . Inorganic layers (H01L 21/475, H01L 21/4757 take precedence) [2, 5, 2006.01]
H01L 21/473 Hierarchieinformationen		. . . . . . . . composed of oxides or glassy oxides or oxide-based glass [2, 2006.01]
H01L 21/475 Hierarchieinformationen		. . . . . . . using masks [2, 5, 2006.01]
H01L 21/4757 Hierarchieinformationen		. . . . . . . After-treatment [5, 2006.01]
H01L 21/4763 Hierarchieinformationen		. . . . . . Deposition of non-insulating-, e.g. conductive-, resistive-, layers on insulating layers; After-treatment of these layers (manufacture of electrodes H01L 21/28, H10D 64/01) [5, 2006.01]
H01L 21/477 Hierarchieinformationen		. . . . . Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering (H01L 21/36-H01L 21/449, H01L 21/461-H01L 21/475 take precedence) [2, 2006.01]
H01L 21/479 Hierarchieinformationen		. . . . . Application of electric currents or fields, e.g. for electroforming (H01L 21/36-H01L 21/449, H01L 21/461-H01L 21/477 take precedence) [2, 2006.01]
H01L 21/48 Hierarchieinformationen		. . . Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L 21/18-H01L 21/326 or H10D 48/04-H10D 48/07 [2, 2006.01]
H01L 21/50 Hierarchieinformationen		. . . Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L 21/18-H01L 21/326 or H10D 48/04-H10D 48/07 [2, 2006.01]
H01L 21/52 Hierarchieinformationen		. . . . Mounting semiconductor bodies in containers [2, 2006.01]
H01L 21/54 Hierarchieinformationen		. . . . Providing fillings in containers, e.g. gas fillings [2, 2006.01]
H01L 21/56 Hierarchieinformationen		. . . . Encapsulations, e.g. encapsulating layers, coatings [2, 2006.01]
H01L 21/58 Hierarchieinformationen		. . . . Mounting semiconductor devices on supports [2, 2006.01]
H01L 21/60 Hierarchieinformationen		. . . . Attaching leads or other conductive members, to be used for carrying current to or from the device in operation [2, 2006.01]
H01L 21/603 Hierarchieinformationen		. . . . . involving the application of pressure, e.g. thermo-compression bonding (H01L 21/607 takes precedence) [2, 2006.01]
H01L 21/607 Hierarchieinformationen		. . . . . involving the application of mechanical vibrations, e.g. ultrasonic vibrations [2, 2006.01]
H01L 21/62 Hierarchieinformationen		. . the devices having no potential barriers [2, 2006.01]
H01L 21/64 Hierarchieinformationen		. Manufacture or treatment of solid-state devices other than semiconductor devices, or of parts thereof, not specially adapted for a single type of device provided for in subclasses H10F, H10H, H10K or H10N [2, 2006.01]
H01L 21/66 Hierarchieinformationen		. Testing or measuring during manufacture or treatment [2, 2006.01]
H01L 21/67 Hierarchieinformationen		. Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components [2006.01]
H01L 21/673 Hierarchieinformationen		. . using specially adapted carriers [2006.01]
H01L 21/677 Hierarchieinformationen		. . for conveying, e.g. between different work stations [2006.01]
H01L 21/68 Hierarchieinformationen		. . for positioning, orientation or alignment [2, 2006.01]
H01L 21/683 Hierarchieinformationen		. . for supporting or gripping (for positioning, orientation or alignment H01L 21/68) [2006.01]
H01L 21/687 Hierarchieinformationen		. . . using mechanical means, e.g. chucks, clamps or pinches [2006.01]
H01L 21/70 Hierarchieinformationen		. Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof (manufacture of assemblies consisting of preformed electrical components H05K 3/00, H05K 13/00) [2, 2006.01]
H01L 21/71 Hierarchieinformationen		. . Manufacture of specific parts of devices defined in group H01L 21/70 (H01L 21/28, H01L 21/44, H01L 21/48 and H10D 64/01 take precedence) [6, 2006.01]
H01L 21/74 Hierarchieinformationen		. . . Making of buried regions of high impurity concentration, e.g. buried collector layers, internal connections [2, 2006.01]
H01L 21/76 Hierarchieinformationen		. . . Making of isolation regions between components [2, 2006.01]
H01L 21/761 Hierarchieinformationen		. . . . PN junctions [6, 2006.01]
H01L 21/762 Hierarchieinformationen		. . . . Dielectric regions [6, 2006.01]
H01L 21/763 Hierarchieinformationen		. . . . Polycrystalline semiconductor regions [6, 2006.01]
H01L 21/764 Hierarchieinformationen		. . . . Air gaps [6, 2006.01]
H01L 21/765 Hierarchieinformationen		. . . . by field-effect [6, 2006.01]
H01L 21/768 Hierarchieinformationen		. . . Applying interconnections to be used for carrying current between separate components within a device [6, 2006.01]
H01L 21/77 Hierarchieinformationen		. . Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate (manufacture or treatment of electronic memory devices H10B) [6, 2006.01, 2017.01]
H01L 21/78 Hierarchieinformationen		. . . with subsequent division of the substrate into plural individual devices (cutting to change the surface-physical characteristics or shape of semiconductor bodies H01L 21/304) [2, 6, 2006.01]
H01L 21/782		(transferred to H10D 99/00)
H01L 21/784		(transferred to H10D 84/01)
H01L 21/786		(transferred to H10D 86/01)
H01L 21/82		(transferred to H10D 99/00; H10D 89/00-H10D 89/10)
H01L 21/822		(transferred to H10D 84/03)
H01L 21/8222		(transferred to H10D 84/03)
H01L 21/8224		(transferred to H10D 84/03)
H01L 21/8226		(transferred to H10D 84/03)
H01L 21/8228		(transferred to H10D 84/03)
H01L 21/8232		(transferred to H10D 84/03)
H01L 21/8234		(transferred to H10D 84/03)
H01L 21/8236		(transferred to H10D 84/03)
H01L 21/8238		(transferred to H10D 84/03)
H01L 21/8248		(transferred to H10D 84/03)
H01L 21/8249		(transferred to H10D 84/03)
H01L 21/8252		(transferred to H10D 84/05)
H01L 21/8254		(transferred to H10D 84/07)
H01L 21/8256		(transferred to H10D 84/02-H10D 84/03)
H01L 21/8258		(transferred to H10D 84/08)
H01L 21/84		(transferred to H10D 86/01)
H01L 21/86		(transferred to H10D 86/03)
H01L 21/98 Hierarchieinformationen		. . Assembly of devices consisting of solid state components formed in or on a common substrate; Assembly of integrated circuit devices (H01L 21/50 takes precedence) [2, 5, 2006.01]
H01L 23/00 Hierarchieinformationen		Details of semiconductor or other solid state devices (H01L 25/00 takes precedence) [2, 5, 2006.01]
H01L 25/00 Hierarchieinformationen		Assemblies consisting of a plurality of individual semiconductor or other solid-state devices (devices consisting of a plurality of solid-state components formed in or on a common substrate H10D 89/00; photovoltaic modules or arrays of photovoltaic cells H10F 19/00) [2, 5, 2006.01]
H01L 27/00		(transferred to H10D 99/00)
H01L 29/00		(transferred to H10D 99/00)
H01L 31/00		(transferred to H10F 99/00)
H01L 33/00		(transferred to H10H 99/00; H10H 20/00-H10H 20/80)
H01M Hierarchieinformationen		PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY [2]
H01P Hierarchieinformationen		WAVEGUIDES; RESONATORS, LINES OR OTHER DEVICES OF THE WAVEGUIDE TYPE (operating at optical frequencies G02B)
H01Q Hierarchieinformationen		ANTENNAS, i.e. RADIO AERIALS (radiators or antennas for microwave heating H05B 6/72)
H01R Hierarchieinformationen		ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
H01S Hierarchieinformationen		DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
H01T Hierarchieinformationen		SPARK GAPS; OVERVOLTAGE ARRESTERS USING SPARK GAPS; SPARKING PLUGS; CORONA DEVICES; GENERATING IONS TO BE INTRODUCED INTO NON-ENCLOSED GASES (overvoltage protection circuits H02H)
H02 Hierarchieinformationen		GENERATION, CONVERSION, OR DISTRIBUTION OF ELECTRIC POWER
H03 Hierarchieinformationen		ELECTRONIC CIRCUITRY
H04 Hierarchieinformationen		ELECTRIC COMMUNICATION TECHNIQUE
H05 Hierarchieinformationen		ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
H10 Hierarchieinformationen		SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR [2023.01]
H99 Hierarchieinformationen		SUBJECT MATTER NOT OTHERWISE PROVIDED FOR IN THIS SECTION [2006.01]

Zu vergleichende IPC-Stelle: Es wurden im Verzeichnis noch keine IPC-Stellen für die Vergleichsansicht vorgemerkt. [Version , Sprache ]