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IPC-Stelle: G11C 11/22 2-Punkt Untergruppe [Version 2024.01 (aktuell), Sprache EN - English]

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Hierarchielinien

DEKLA-Gruppen

Symbol		Titel
A Hierarchieinformationen		HUMAN NECESSITIES
B Hierarchieinformationen		PERFORMING OPERATIONS; TRANSPORTING
C Hierarchieinformationen		CHEMISTRY; METALLURGY
D Hierarchieinformationen		TEXTILES; PAPER
E Hierarchieinformationen		FIXED CONSTRUCTIONS
F Hierarchieinformationen		MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
G Hierarchieinformationen		PHYSICS
G01 Hierarchieinformationen		MEASURING; TESTING
G02 Hierarchieinformationen		OPTICS
G03 Hierarchieinformationen		PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY [4]
G04 Hierarchieinformationen		HOROLOGY
G05 Hierarchieinformationen		CONTROLLING; REGULATING
G06 Hierarchieinformationen		COMPUTING; CALCULATING OR COUNTING
G07 Hierarchieinformationen		CHECKING-DEVICES
G08 Hierarchieinformationen		SIGNALLING
G09 Hierarchieinformationen		EDUCATING; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
G10 Hierarchieinformationen		MUSICAL INSTRUMENTS; ACOUSTICS
G11 Hierarchieinformationen		INFORMATION STORAGE
G11B Hierarchieinformationen		INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER (recording measured values in a way that does not require playback through a transducer G01D 9/00; recording or playback apparatus using mechanically marked tape, e.g. punched paper tape, or using unit records, e.g. punched or magnetically marked cards G06K; transferring data from one type of record carrier to another G06K 1/18; circuits for coupling output of reproducer to radio receiver H04B 1/20; gramophone pick-ups or like acoustic electromechanical transducers or circuits therefor H04R)
G11C Hierarchieinformationen		STATIC STORES (semiconductor memory devices H10B)
G11C 5/00 Hierarchieinformationen		Details of stores covered by group G11C 11/00 [1, 2006.01]
G11C 7/00 Hierarchieinformationen		Arrangements for writing information into, or reading information out from, a digital store (G11C 5/00 takes precedence; auxiliary circuits for stores using semiconductor devices G11C 11/4063, G11C 11/413, G11C 11/4193) [1, 2, 5, 2006.01]
G11C 8/00 Hierarchieinformationen		Arrangements for selecting an address in a digital store (auxiliary circuits for stores using semiconductor devices G11C 11/4063, G11C 11/413, G11C 11/4193) [2, 5, 2006.01]
G11C 11/00 Hierarchieinformationen		Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (G11C 14/00-G11C 21/00 take precedence) [1, 5, 2006.01]
G11C 11/02 Hierarchieinformationen		. using magnetic elements [1, 2006.01]
G11C 11/04 Hierarchieinformationen		. . using storage elements having cylindrical form, e.g. rod, wire (G11C 11/12, G11C 11/14 take precedence) [1, 2, 2006.01]
G11C 11/06 Hierarchieinformationen		. . using single-aperture storage elements, e.g. ring core; using multi-aperture plates in which each individual aperture forms a storage element [1, 2006.01]
G11C 11/061 Hierarchieinformationen		. . . using elements with single aperture or magnetic loop for storage, one element per bit, and for destructive read-out [2, 2006.01]
G11C 11/063 Hierarchieinformationen		. . . . bit-organized, such as, 2L/2D-, 3D-organization, i.e. for selection of an element by means of at least two coincident partial currents both for reading and for writing [2, 2006.01]
G11C 11/065 Hierarchieinformationen		. . . . word-organized, such as 2D-organization, or linear selection, i.e. for selection of all the elements of a word by means of a single full current for reading [2, 2006.01]
G11C 11/067 Hierarchieinformationen		. . . using elements with single aperture or magnetic loop for storage, one element per bit, and for non-destructive read-out [2, 2006.01]
G11C 11/08 Hierarchieinformationen		. . using multi-aperture storage elements, e.g. using transfluxors; using plates incorporating several individual multi-aperture storage elements (G11C 11/10 takes precedence) [1, 2, 2006.01]
G11C 11/10 Hierarchieinformationen		. . using multi-axial storage elements [1, 2006.01]
G11C 11/12 Hierarchieinformationen		. . using tensors; using twistors, i.e. elements in which one axis of magnetisation is twisted [1, 2006.01]
G11C 11/14 Hierarchieinformationen		. . using thin-film elements [1, 2006.01]
G11C 11/15 Hierarchieinformationen		. . . using multiple magnetic layers (G11C 11/155 takes precedence) [2, 2006.01]
G11C 11/155 Hierarchieinformationen		. . . with cylindrical configuration [2, 2006.01]
G11C 11/16 Hierarchieinformationen		. . using elements in which the storage effect is based on magnetic spin effect [1, 2006.01]
G11C 11/18 Hierarchieinformationen		. using Hall-effect devices [1, 2006.01]
G11C 11/19 Hierarchieinformationen		. using non-linear reactive devices in resonant circuits [2, 2006.01]
G11C 11/20 Hierarchieinformationen		. . using parametrons [1, 2, 2006.01]
G11C 11/21 Hierarchieinformationen		. using electric elements [2, 2006.01]
G11C 11/22 Hierarchieinformationen		. . using ferroelectric elements [1, 2, 2006.01]
G11C 11/23 Hierarchieinformationen		. . using electrostatic storage on a common layer, e.g. Forrester-Haeff tubes (G11C 11/22 takes precedence) [2, 2006.01]
G11C 11/24 Hierarchieinformationen		. . using capacitors (G11C 11/22 takes precedence; using a combination of semiconductor devices and capacitors G11C 11/34, e.g. G11C 11/40) [1, 2, 5, 2006.01]
G11C 11/26 Hierarchieinformationen		. . using discharge tubes [1, 2, 2006.01]
G11C 11/28 Hierarchieinformationen		. . . using gas-filled tubes [1, 2, 2006.01]
G11C 11/30 Hierarchieinformationen		. . . using vacuum tubes (G11C 11/23 takes precedence) [1, 2, 2006.01]
G11C 11/34 Hierarchieinformationen		. . using semiconductor devices [1, 2, 2006.01]
G11C 11/35 Hierarchieinformationen		. . . with charge storage in a depletion layer, e.g. charge coupled devices [7, 2006.01]
G11C 11/36 Hierarchieinformationen		. . . using diodes, e.g. as threshold elements [1, 2, 2006.01]
G11C 11/38 Hierarchieinformationen		. . . . using tunnel diodes [1, 2, 2006.01]
G11C 11/39 Hierarchieinformationen		. . . using thyristors [5, 2006.01]
G11C 11/40 Hierarchieinformationen		. . . using transistors [1, 2, 2006.01]
G11C 11/401 Hierarchieinformationen		. . . . forming cells needing refreshing or charge regeneration, i.e. dynamic cells [5, 2006.01]
G11C 11/402 Hierarchieinformationen		. . . . . with charge regeneration individual to each memory cell, i.e. internal refresh [5, 2006.01]
G11C 11/403 Hierarchieinformationen		. . . . . with charge regeneration common to a multiplicity of memory cells, i.e. external refresh [5, 2006.01]
G11C 11/404 Hierarchieinformationen		. . . . . . with one charge-transfer gate, e.g. MOS transistor, per cell [5, 2006.01]
G11C 11/405 Hierarchieinformationen		. . . . . . with three charge-transfer gates, e.g. MOS transistors, per cell [5, 2006.01]
G11C 11/406 Hierarchieinformationen		. . . . . Management or control of the refreshing or charge-regeneration cycles [5, 2006.01]
G11C 11/4063 Hierarchieinformationen		. . . . . Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing [7, 2006.01]
G11C 11/4067 Hierarchieinformationen		. . . . . . for memory cells of the bipolar type [7, 2006.01]
G11C 11/407 Hierarchieinformationen		. . . . . . for memory cells of the field-effect type [5, 2006.01]
G11C 11/4072 Hierarchieinformationen		. . . . . . . Circuits for initialization, powering up or down, clearing memory or presetting [7, 2006.01]
G11C 11/4074 Hierarchieinformationen		. . . . . . . Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits [7, 2006.01]
G11C 11/4076 Hierarchieinformationen		. . . . . . . Timing circuits (for regeneration management G11C 11/406) [7, 2006.01]
G11C 11/4078 Hierarchieinformationen		. . . . . . . Safety or protection circuits, e.g. for preventing inadvertent or unauthorised reading or writing; Status cells; Test cells (protection of memory contents during checking or testing G11C 29/52) [7, 2006.01]
G11C 11/408 Hierarchieinformationen		. . . . . . . Address circuits [5, 2006.01]
G11C 11/409 Hierarchieinformationen		. . . . . . . Read-write [R-W] circuits [5, 2006.01]
G11C 11/4091 Hierarchieinformationen		. . . . . . . . Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating [7, 2006.01]
G11C 11/4093 Hierarchieinformationen		. . . . . . . . Input/output [I/O] data interface arrangements, e.g. data buffers [7, 2006.01]
G11C 11/4094 Hierarchieinformationen		. . . . . . . . Bit-line management or control circuits [7, 2006.01]
G11C 11/4096 Hierarchieinformationen		. . . . . . . . Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches [7, 2006.01]
G11C 11/4097 Hierarchieinformationen		. . . . . . . . Bit-line organisation, e.g. bit-line layout, folded bit lines [7, 2006.01]
G11C 11/4099 Hierarchieinformationen		. . . . . . . . Dummy cell treatment; Reference voltage generators [7, 2006.01]
G11C 11/41 Hierarchieinformationen		. . . . forming cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger [5, 2006.01]
G11C 11/411 Hierarchieinformationen		. . . . . using bipolar transistors only [5, 2006.01]
G11C 11/412 Hierarchieinformationen		. . . . . using field-effect transistors only [5, 2006.01]
G11C 11/413 Hierarchieinformationen		. . . . . Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction [5, 2006.01]
G11C 11/414 Hierarchieinformationen		. . . . . . for memory cells of the bipolar type [5, 2006.01]
G11C 11/415 Hierarchieinformationen		. . . . . . . Address circuits [5, 2006.01]
G11C 11/416 Hierarchieinformationen		. . . . . . . Read-write [R-W] circuits [5, 2006.01]
G11C 11/417 Hierarchieinformationen		. . . . . . for memory cells of the field-effect type [5, 2006.01]
G11C 11/418 Hierarchieinformationen		. . . . . . . Address circuits [5, 2006.01]
G11C 11/419 Hierarchieinformationen		. . . . . . . Read-write [R-W] circuits [5, 2006.01]
G11C 11/4193 Hierarchieinformationen		. . . Auxiliary circuits specific to particular types of semiconductor storage devices, e.g. for addressing, driving, sensing, timing, power supply, signal propagation (G11C 11/4063, G11C 11/413 take precedence) [7, 2006.01]
G11C 11/4195 Hierarchieinformationen		. . . . Address circuits [7, 2006.01]
G11C 11/4197 Hierarchieinformationen		. . . . Read-write [R-W] circuits [7, 2006.01]
G11C 11/42 Hierarchieinformationen		. . using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled [1, 2006.01]
G11C 11/44 Hierarchieinformationen		. . using super-conductive elements, e.g. cryotron [1, 2, 2006.01]
G11C 11/46 Hierarchieinformationen		. using thermoplastic elements [1, 2006.01]
G11C 11/48 Hierarchieinformationen		. using displaceable coupling elements, e.g. ferromagnetic cores, to produce change between different states of mutual or self-inductance [1, 2006.01]
G11C 11/50 Hierarchieinformationen		. using actuation of electric contacts to store the information [1, 2006.01]
G11C 11/52 Hierarchieinformationen		. . using electromagnetic relays [1, 2006.01]
G11C 11/54 Hierarchieinformationen		. using elements simulating biological cells, e.g. neuron [1, 2006.01]
G11C 11/56 Hierarchieinformationen		. using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency [2, 2006.01]
G11C 13/00 Hierarchieinformationen		Digital stores characterised by the use of storage elements not covered by groups G11C 11/00, G11C 23/00, or G11C 25/00 [1, 2006.01]
G11C 14/00 Hierarchieinformationen		Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down [5, 2006.01]
G11C 15/00 Hierarchieinformationen		Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores [1, 2, 2006.01]
G11C 16/00 Hierarchieinformationen		Erasable programmable read-only memories (G11C 14/00 takes precedence) [5, 2006.01]
G11C 17/00 Hierarchieinformationen		Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards [1, 2, 5, 2006.01]
G11C 19/00 Hierarchieinformationen		Digital stores in which the information is moved stepwise, e.g. shift registers [1, 2006.01]
G11C 21/00 Hierarchieinformationen		Digital stores in which the information circulates (stepwise G11C 19/00) [1, 2006.01]
G11C 23/00 Hierarchieinformationen		Digital stores characterised by movement of mechanical parts to effect storage, e.g. using balls; Storage elements therefor [1, 2006.01]
G11C 25/00 Hierarchieinformationen		Digital stores characterised by the use of flowing media; Storage elements therefor [1, 2006.01]
G11C 27/00 Hierarchieinformationen		Electric analogue stores, e.g. for storing instantaneous values [1, 2006.01]
G11C 29/00 Hierarchieinformationen		Checking stores for correct operation; Testing stores during standby or offline operation [1, 2006.01]
G11C 99/00 Hierarchieinformationen		Subject matter not provided for in other groups of this subclass [2006.01]
G12 Hierarchieinformationen		INSTRUMENT DETAILS
G16 Hierarchieinformationen		INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTED FOR SPECIFIC APPLICATION FIELDS [2018.01]
G21 Hierarchieinformationen		NUCLEAR PHYSICS; NUCLEAR ENGINEERING
G99 Hierarchieinformationen		SUBJECT MATTER NOT OTHERWISE PROVIDED FOR IN THIS SECTION [2006.01]
H Hierarchieinformationen		ELECTRICITY

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