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A
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SECTION A — HUMAN NECESSITIES
B
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SECTION B — PERFORMING OPERATIONSTRANSPORTING
C
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SECTION C — CHEMISTRYMETALLURGY
D
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SECTION D — TEXTILESPAPER
E
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SECTION E — FIXED CONSTRUCTIONS
F
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SECTION F — MECHANICAL ENGINEERINGLIGHTINGHEATINGWEAPONSBLASTING
G
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SECTION G — PHYSICS
G01
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INSTRUMENTS
G01
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MEASURINGTESTING
G02
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OPTICS
G03
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PHOTOGRAPHYCINEMATOGRAPHYANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVESELECTROGRAPHYHOLOGRAPHY [4]
G04
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HOROLOGY
G05
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CONTROLLINGREGULATING
G06
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COMPUTINGCALCULATINGCOUNTING
G07
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CHECKING-DEVICES
G08
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SIGNALLING
G09
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EDUCATINGCRYPTOGRAPHYDISPLAYADVERTISINGSEALS
G10
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MUSICAL INSTRUMENTSACOUSTICS
G11
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INFORMATION STORAGE
G11B
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INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER (recording measured values in a way that does not require playback through a transducer G01D 9/00; recording or playback apparatus using mechanically marked tape, e.g. punched paper tape, or using unit records, e.g. punched or magnetically marked cards G06K; transferring data from one type of record carrier to another G06K 1/18;  circuits for coupling output of reproducer to radio receiver H04B 1/20;  gramophone pick-ups or like acoustic electromechanical transducers or circuits therefor H04R)
G11C
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STATIC STORES (information storage based on relative movement between record carrier and transducer G11B; semiconductor devices for storage H01L, e.g. H01L 27/108-H01L 27/115; pulse technique in general H03K, e.g. electronic switches H03K 17/00)
G11C 5/00
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Details of stores covered by group G11C 11/00
G11C 7/00
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Arrangements for writing information into, or reading information out from, a digital store (G11C 5/00 takes precedence; auxiliary circuits for stores using semiconductor devices G11C 11/4063, G11C 11/413, G11C 11/4193) [2, 5]
G11C 8/00
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Arrangements for selecting an address in a digital store (auxiliary circuits for stores using semiconductor devices G11C 11/4063, G11C 11/413, G11C 11/4193) [2, 5]
G11C 11/00
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Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor (G11C 14/00-G11C 21/00 take precedence) [5]
G11C 11/02
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using magnetic elements
G11C 11/04
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. . using storage elements having cylindrical form, e.g. rod, wire (G11C 11/12, G11C 11/14 take precedence) [2]
G11C 11/06
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. . using single-aperture storage elements, e.g. ring coreusing multi-aperture plates in which each individual aperture forms a storage element
G11C 11/061
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. . . using elements with single aperture or magnetic loop for storage, one element per bit, and for destructive read-out [2]
G11C 11/063
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. . . . bit-organized, such as, 2L/2D-, 3D-organization, i.e. for selection of an element by means of at least two coincident partial currents both for reading and for writing [2]
G11C 11/065
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. . . . word-organized, such as 2D-organization, or linear selection, i.e. for selection of all the elements of a word by means of a single full current for reading [2]
G11C 11/067
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. . . using elements with single aperture or magnetic loop for storage, one element per bit, and for non-destructive read-out [2]
G11C 11/08
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. . using multi-aperture storage elements, e.g. using transfluxorsusing plates incorporating several individual multi-aperture storage elements (G11C 11/10 takes precedence; using multi-aperture plates in which each individual aperture forms a storage element G11C 11/06) [2]
G11C 11/10
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. . using multi-axial storage elements
G11C 11/12
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. . using tensorsusing twistors, i.e. elements in which one axis of magnetisation is twisted
G11C 11/14
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. . using thin-film elements
G11C 11/15
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. . . using multiple magnetic layers (G11C 11/155 takes precedence) [2]
G11C 11/155
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. . . with cylindrical configuration [2]
G11C 11/16
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. . using elements in which the storage effect is based on magnetic spin effect
G11C 11/18
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using Hall-effect devices
G11C 11/19
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using non-linear reactive devices in resonant circuits [2]
G11C 11/20
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. . using parametrons [2]
G11C 11/21
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using electric elements [2]
G11C 11/22
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. . using ferroelectric elements [2]
G11C 11/23
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. . using electrostatic storage on a common layer, e.g. Forrester-Haeff tubes (G11C 11/22 takes precedence) [2]
G11C 11/24
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. . using capacitors (G11C 11/22 takes precedence; using a combination of semiconductor devices and capacitors G11C 11/34, e.g. G11C 11/40) [2, 5]
G11C 11/26
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. . using discharge tubes [2]
G11C 11/28
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. . . using gas-filled tubes [2]
G11C 11/30
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. . . using vacuum tubes (G11C 11/23 takes precedence) [2]
G11C 11/34
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. . using semiconductor devices [2]
G11C 11/35
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. . . with charge storage in a depletion layer, e.g. charge coupled devices [7]
G11C 11/36
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. . . using diodes, e.g. as threshold elements [2]
G11C 11/38
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. . . . using tunnel diodes [2]
G11C 11/39
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. . . using thyristors [5]
G11C 11/40
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. . . using transistors [2]
G11C 11/401
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. . . . forming cells needing refreshing or charge regeneration, i.e. dynamic cells [5]
G11C 11/402
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. . . . . with charge regeneration individual to each memory cell, i.e. internal refresh [5]
G11C 11/403
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. . . . . with charge regeneration common to a multiplicity of memory cells, i.e. external refresh [5]
G11C 11/404
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. . . . . . with one charge-transfer gate, e.g. MOS transistor, per cell [5]
G11C 11/405
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. . . . . . with three charge-transfer gates, e.g. MOS transistors, per cell [5]
G11C 11/406
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. . . . . Management or control of the refreshing or charge-regeneration cycles [5]
G11C 11/4063
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. . . . . Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing [7]
G11C 11/4067
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. . . . . . for memory cells of the bipolar type [7]
G11C 11/407
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. . . . . . for memory cells of the field-effect type [5]
G11C 11/4072
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. . . . . . . Circuits for initialization, powering up or down, clearing memory or presetting [7]
G11C 11/4074
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. . . . . . . Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits [7]
G11C 11/4076
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. . . . . . . Timing circuits (for regeneration management G11C 11/406) [7]
G11C 11/4078
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. . . . . . . Safety or protection circuits, e.g. for preventing inadvertent or unauthorised reading or writingStatus cellsTest cells (protection of memory contents during checking or testing G11C 29/52) [7]
G11C 11/408
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. . . . . . . Address circuits [5]
G11C 11/409
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. . . . . . . Read-write (R-W) circuits [5]
G11C 11/4091
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. . . . . . . . Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating [7]
G11C 11/4093
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. . . . . . . . Input/output (I/O) data interface arrangements, e.g. data buffers (level conversion circuits in general H03K 19/0175) [7]
G11C 11/4094
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. . . . . . . . Bit-line management or control circuits [7]
G11C 11/4096
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. . . . . . . . Input/output (I/O) data management or control circuits, e.g. reading or writing circuits, I/O drivers, bit-line switches [7]
G11C 11/4097
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. . . . . . . . Bit-line organisation, e.g. bit-line layout, folded bit lines [7]
G11C 11/4099
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. . . . . . . . Dummy cell treatmentReference voltage generators [7]
G11C 11/41
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. . . . forming cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger [5]
G11C 11/411
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. . . . . using bipolar transistors only [5]
G11C 11/412
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. . . . . using field-effect transistors only [5]
G11C 11/413
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. . . . . Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction [5]
G11C 11/414
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. . . . . . for memory cells of the bipolar type [5]
G11C 11/415
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. . . . . . . Address circuits [5]
G11C 11/416
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. . . . . . . Read-write (R-W) circuits [5]
G11C 11/417
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. . . . . . for memory cells of the field-effect type [5]
G11C 11/418
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. . . . . . . Address circuits [5]
G11C 11/419
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. . . . . . . Read-write (R-W) circuits [5]
G11C 11/4193
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. . . Auxiliary circuits specific to particular types of semiconductor storage devices, e.g. for addressing, driving, sensing, timing, power supply, signal propagation (G11C 11/4063, G11C 11/413 take precedence) [7]
G11C 11/4195
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. . . . Address circuits [7]
G11C 11/4197
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. . . . Read-write (R-W) circuits [7]
G11C 11/42
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. . using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
G11C 11/44
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. . using super-conductive elements, e.g. cryotron [2]
G11C 11/46
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using thermoplastic elements
G11C 11/48
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using displaceable coupling elements, e.g. ferromagnetic cores, to produce change between different states of mutual or self-inductance
G11C 11/50
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using actuation of electric contacts to store the information (mechanical stores G11C 23/00; switches providing a selected number of consecutive operations of the contacts by a single manual actuation of the operating part H01H 41/00)
G11C 11/52
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. . using electromagnetic relays
G11C 11/54
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using elements simulating biological cells, e.g. neuron
G11C 11/56
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using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency (counting arrangements comprising multi-stable elements of this type H03K 25/00, H03K 29/00) [2]
G11C 13/00
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Digital stores characterised by the use of storage elements not covered by groups G11C 11/00, G11C 23/00, or G11C 25/00
G11C 14/00
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Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down [5]
G11C 15/00
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Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores (in which information is addressed to a specific location G11C 11/00) [2]
G11C 16/00
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Erasable programmable read-only memories (G11C 14/00 takes precedence) [5]
G11C 17/00
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Read-only memories programmable only onceSemi-permanent stores, e.g. manually-replaceable information cards (erasable programmable read-only memories G11C 16/00; coding, decoding or code conversion, in general H03M) [2, 5]
G11C 19/00
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Digital stores in which the information is moved stepwise, e.g. shift registers (counting chains H03K 23/00)
G11C 21/00
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Digital stores in which the information circulates (stepwise G11C 19/00)
G11C 23/00
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Digital stores characterised by movement of mechanical parts to effect storage, e.g. using ballsStorage elements therefor (storing by actuating contacts G11C 11/48)
G11C 25/00
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Digital stores characterised by the use of flowing mediaStorage elements therefor
G11C 27/00
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Electric analogue stores, e.g. for storing instantaneous values
G11C 29/00
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Checking stores for correct operationTesting stores during standby or offline operation [1, 2006.01]
G11C 99/00
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Subject matter not provided for in other groups of this subclass [2006.01]
G12
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INSTRUMENT DETAILS
G21
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NUCLEONICS
G21
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NUCLEAR PHYSICSNUCLEAR ENGINEERING
G99
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SUBJECT MATTER NOT OTHERWISE PROVIDED FOR IN THIS SECTION [2006.01]
H
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SECTION H — ELECTRICITY

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