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A
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SECTION A — HUMAN NECESSITIES
B
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SECTION B — PERFORMING OPERATIONSTRANSPORTING
C
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SECTION C — CHEMISTRYMETALLURGY
C01
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CHEMISTRY
C01
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INORGANIC CHEMISTRY (processing powders of inorganic compounds preparatory to the manufacturing of ceramic products C04B 35/00; fermentation or enzyme-using processes for the preparation of elements or inorganic compounds except carbon dioxide C12P 3/00; obtaining metal compounds from mixtures, e.g. ores, which are intermediate compounds in a metallurgical process for obtaining a free metal C21B, C22B; production of non-metallic elements or inorganic compounds by electrolysis or electrophoresis C25B)
C02
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TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE (settling tanks, filtering, e.g. sand filters or screening devices, B01D)
C03
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GLASSMINERAL OR SLAG WOOL
C04
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CEMENTSCONCRETEARTIFICIAL STONECERAMICSREFRACTORIES (alloys based on refractory metals C22C) [4]
C05
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FERTILISERSMANUFACTURE THEREOF (processes or devices for granulating materials, in general B01J 2/00; soil-conditioning or soil-stabilising materials C09K 17/00) [4]
C06
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EXPLOSIVESMATCHES
C07
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ORGANIC CHEMISTRY (such compounds as the oxides, sulfides, or oxysulfides of carbon, cyanogen, phosgene, hydrocyanic acid or salts thereof C01; products obtained from layered base-exchange silicates by ion-exchange with organic compounds such as ammonium, phosphonium or sulfonium compounds or by intercalation of organic compounds C01B 33/44; macromolecular compounds C08; dyes C09; fermentation products C12; fermentation or enzyme-using processes to synthesise a desired chemical compound or composition or to separate optical isomers from a racemic mixture C12P; production of organic compounds by electrolysis or electrophoresis C25B 3/00, C25B 7/00) [2]
C08
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ORGANIC MACROMOLECULAR COMPOUNDSTHEIR PREPARATION OR CHEMICAL WORKING-UPCOMPOSITIONS BASED THEREON (manufacture or treatment of artificial threads, fibres, bristles or ribbons D01)
C09
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DYESPAINTSPOLISHESNATURAL RESINSADHESIVESCOMPOSITIONS NOT OTHERWISE PROVIDED FORAPPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
C10
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PETROLEUM, GAS OR COKE INDUSTRIESTECHNICAL GASES CONTAINING CARBON MONOXIDEFUELSLUBRICANTSPEAT
C11
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ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXESFATTY ACIDS THEREFROMDETERGENTSCANDLES (edible oil or fat compositions A23)
C12
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BIOCHEMISTRYBEERSPIRITSWINEVINEGARMICROBIOLOGYENZYMOLOGYMUTATION OR GENETIC ENGINEERING
C13
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SUGAR INDUSTRY (polysaccharides, e.g. starch, derivatives thereof C08B; malt C12C) [4]
C14
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SKINSHIDESPELTSLEATHER
C21
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METALLURGY
C21
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METALLURGY OF IRON
C22
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METALLURGY (of iron C21)FERROUS OR NON-FERROUS ALLOYSTREATMENT OF ALLOYS OR NON-FERROUS METALS (general methods or devices for heat treatment of ferrous or non-ferrous metals or alloys C21D; production of metals by electrolysis or electrophoresis C25)
C23
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COATING METALLIC MATERIALCOATING MATERIAL WITH METALLIC MATERIAL (by metallising textiles D06M 11/83; decorating textiles by locally metallising D06Q 1/04)CHEMICAL SURFACE TREATMENTDIFFUSION TREATMENT OF METALLIC MATERIALCOATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (for specific applications, see the relevant places, e.g. for manufacturing resistors H01C 17/06)INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL (treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D, C25F) [2]
C25
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ELECTROLYTIC OR ELECTROPHORETIC PROCESSESAPPARATUS THEREFOR (electrodialysis, electro-osmosis, separation of liquids by electricity B01D; working of metal by the action of a high concentration of electric current B23H; treatment of water, waste water or sewage by electrochemical methods C02F 1/46; surface treatment of metallic material or coating involving at least one process provided for in class C23 and at least one process covered by this class C23C 28/00, C23F 17/00; anodic or cathodic protection C23F; single-crystal growth C30B; metallising textiles D06M 11/83; decorating textiles by locally metallising D06Q 1/04; electrochemical methods of analysis G01N; electrochemical measuring, indicating or recording devices G01R; electrolytic circuit elements, e.g. capacitors, H01G; electrochemical current or voltage generators H01M) [4]
C30
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CRYSTAL GROWTH (separation by crystallisation in general B01D 9/00) [3]
C30B
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SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds B01J 3/06)UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIALREFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B)PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F)SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTUREAFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H01L)APPARATUS THEREFOR [3]
C30B 1/00
Single-crystal growth from solids or gels [3]
C30B 1/00
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Single-crystal growth directly from the solid state (unidirectional demixing of eutectoid materials C30B 3/00; under a protective fluid C30B 27/00) [3]
C30B 3/00
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Unidirectional demixing of eutectoid materials [3]
C30B 5/00
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Single-crystal growth from gels (under a protective fluid C30B 27/00) [3]
C30B 7/00
Single-crystal growth from liquidsUnidirectional solidification of eutectic materials [3]
C30B 7/00
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Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions (from molten solvents C30B 9/00; by normal or gradient freezing C30B 11/00; under a protective fluid C30B 27/00) [3]
C30B 9/00
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Single-crystal growth from melt solutions using molten solvents (by normal or gradient freezing C30B 11/00; by zone-melting C30B 13/00; by crystal pulling C30B 15/00; on immersed seed crystal C30B 17/00; by liquid phase epitaxial growth C30B 19/00; under a protective fluid C30B 27/00) [3]
C30B 11/00
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Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method (C30B 13/00, C30B 15/00, C30B 17/00, C30B 19/00 take precedence; under a protective fluid C30B 27/00) [3]
C30B 13/00
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Single-crystal growth by zone-meltingRefining by zone-melting (C30B 17/00 takes precedence; by changing the cross-section of the treated solid C30B 15/00; under a protective fluid C30B 27/00; for the growth of homogeneous polycrystalline material with defined structure C30B 28/00; zone-refining of specific materials, see the relevant subclasses for the materials) [3, 5]
C30B 15/00
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Single-crystal growth by pulling from a melt, e.g. Czochralski method (under a protective fluid C30B 27/00) [3]
C30B 17/00
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Single-crystal growth on to a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method (C30B 15/00 takes precedence) [3]
C30B 19/00
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Liquid-phase epitaxial-layer growth [3]
C30B 21/00
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Unidirectional solidification of eutectic materials [3]
C30B 23/00
Single-crystal growth from vapours [3]
C30B 23/00
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Single-crystal growth by condensing evaporated or sublimed materials [3]
C30B 25/00
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Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth [3]
C30B 27/00

C30B 27/00
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Single-crystal growth under a protective fluid [3]
C30B 28/00
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Production of homogeneous polycrystalline material with defined structure [5]
C30B 28/02
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directly from the solid state [5]
C30B 28/04
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from liquids [5]
C30B 28/06
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. . by normal freezing or freezing under temperature gradient [5]
C30B 28/08
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. . by zone-melting [5]
C30B 28/10
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. . by pulling from a melt [5]
C30B 28/12
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directly from the gas state [5]
C30B 28/14
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. . by chemical reaction of reactive gases [5]
C30B 29/00
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Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (alloys C22C) [3, 5]
C30B 30/00
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Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions [5]
C30B 31/00
After-treatment of single crystals or homogeneous polycrystalline material with defined structure [3, 5]
C30B 31/00
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Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structureApparatus therefor [3, 5]
C30B 33/00
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After-treatment of single crystals or homogeneous polycrystalline material with defined structure (C30B 31/00 takes precedence; grinding, polishing B24; mechanical fine working of gems, jewels, crystals B28D 5/00) [3, 5]
C30B 35/00

C30B 35/00
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Apparatus in general, specially adapted for the growth, production or after-treatment of single crystals or a homogeneous polycrystalline material with defined structure [3, 5]
C40
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COMBINATORIAL TECHNOLOGY [2006.01]
C40
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COMBINATORIAL TECHNOLOGY [2006.01]
C99
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SUBJECT MATTER NOT OTHERWISE PROVIDED FOR IN THIS SECTION [2006.01]
D
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SECTION D — TEXTILESPAPER
E
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SECTION E — FIXED CONSTRUCTIONS
F
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SECTION F — MECHANICAL ENGINEERINGLIGHTINGHEATINGWEAPONSBLASTING
G
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SECTION G — PHYSICS
H
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SECTION H — ELECTRICITY

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