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Symbol IPC-Stellen auswählen Titel
A
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SECTION A — HUMAN NECESSITIES
B
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SECTION B — PERFORMING OPERATIONSTRANSPORTING
C
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SECTION C — CHEMISTRYMETALLURGY
C01
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CHEMISTRY
C01
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INORGANIC CHEMISTRY
C02
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TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
C03
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GLASSMINERAL OR SLAG WOOL
C04
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CEMENTSCONCRETEARTIFICIAL STONECERAMICSREFRACTORIES [4]
C05
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FERTILISERSMANUFACTURE THEREOF [4]
C06
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EXPLOSIVESMATCHES
C07
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ORGANIC CHEMISTRY [2]
C08
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ORGANIC MACROMOLECULAR COMPOUNDSTHEIR PREPARATION OR CHEMICAL WORKING-UPCOMPOSITIONS BASED THEREON
C09
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DYESPAINTSPOLISHESNATURAL RESINSADHESIVESCOMPOSITIONS NOT OTHERWISE PROVIDED FORAPPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
C10
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PETROLEUM, GAS OR COKE INDUSTRIESTECHNICAL GASES CONTAINING CARBON MONOXIDEFUELSLUBRICANTSPEAT
C11
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ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXESFATTY ACIDS THEREFROMDETERGENTSCANDLES
C12
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BIOCHEMISTRYBEERSPIRITSWINEVINEGARMICROBIOLOGYENZYMOLOGYMUTATION OR GENETIC ENGINEERING
C13
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SUGAR INDUSTRY [4]
C14
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SKINSHIDESPELTSLEATHER
C21
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METALLURGY
C21
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METALLURGY OF IRON
C22
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METALLURGYFERROUS OR NON-FERROUS ALLOYSTREATMENT OF ALLOYS OR NON-FERROUS METALS
C23
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COATING METALLIC MATERIALCOATING MATERIAL WITH METALLIC MATERIALCHEMICAL SURFACE TREATMENTDIFFUSION TREATMENT OF METALLIC MATERIALCOATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERALINHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL [2]
C25
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ELECTROLYTIC OR ELECTROPHORETIC PROCESSESAPPARATUS THEREFOR [4]
C30
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CRYSTAL GROWTH [3]
C30B
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SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds B01J 3/06)UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIALREFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B)PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F)SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTUREAFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H01L)APPARATUS THEREFOR [3]
C30B 1/00
Single-crystal growth from solids or gels [3]
C30B 1/00
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Single-crystal growth directly from the solid state (unidirectional demixing of eutectoid materials C30B 3/00; under a protective fluid C30B 27/00) [3]
C30B 3/00
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Unidirectional demixing of eutectoid materials [3]
C30B 5/00
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Single-crystal growth from gels (under a protective fluid C30B 27/00) [3]
C30B 7/00
Single-crystal growth from liquidsUnidirectional solidification of eutectic materials [3]
C30B 7/00
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Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions (from molten solvents C30B 9/00; by normal or gradient freezing C30B 11/00; under a protective fluid C30B 27/00) [3]
C30B 9/00
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Single-crystal growth from melt solutions using molten solvents (by normal or gradient freezing C30B 11/00; by zone-melting C30B 13/00; by crystal pulling C30B 15/00; on immersed seed crystal C30B 17/00; by liquid phase epitaxial growth C30B 19/00; under a protective fluid C30B 27/00) [3]
C30B 11/00
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Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method (C30B 13/00, C30B 15/00, C30B 17/00, C30B 19/00 take precedence; under a protective fluid C30B 27/00) [3]
C30B 13/00
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Single-crystal growth by zone-meltingRefining by zone-melting (C30B 17/00 takes precedence; by changing the cross-section of the treated solid C30B 15/00; under a protective fluid C30B 27/00; for the growth of homogeneous polycrystalline material with defined structure C30B 28/00; zone-refining of specific materials, see the relevant subclasses for the materials) [3, 5]
C30B 15/00
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Single-crystal growth by pulling from a melt, e.g. Czochralski method (under a protective fluid C30B 27/00) [3]
C30B 17/00
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Single-crystal growth on to a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method (C30B 15/00 takes precedence) [3]
C30B 19/00
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Liquid-phase epitaxial-layer growth [3]
C30B 21/00
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Unidirectional solidification of eutectic materials [3]
C30B 23/00
Single-crystal growth from vapours [3]
C30B 23/00
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Single-crystal growth by condensing evaporated or sublimed materials [3]
C30B 25/00
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Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth [3]
C30B 27/00

C30B 27/00
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Single-crystal growth under a protective fluid [3]
C30B 27/02
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by pulling from a melt [3]
C30B 28/00
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Production of homogeneous polycrystalline material with defined structure [5]
C30B 29/00
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Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape [3, 5]
C30B 30/00
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Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions [5]
C30B 31/00
After-treatment of single crystals or homogeneous polycrystalline material with defined structure [3, 5]
C30B 31/00
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Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structureApparatus therefor [3, 5]
C30B 33/00
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After-treatment of single crystals or homogeneous polycrystalline material with defined structure (C30B 31/00 takes precedence) [3, 5]
C30B 35/00

C30B 35/00
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Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure [3, 5]
C40
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COMBINATORIAL TECHNOLOGY [2006.01]
C40
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COMBINATORIAL TECHNOLOGY [2006.01]
C99
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SUBJECT MATTER NOT OTHERWISE PROVIDED FOR IN THIS SECTION [2006.01]
D
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SECTION D — TEXTILESPAPER
E
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SECTION E — FIXED CONSTRUCTIONS
F
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SECTION F — MECHANICAL ENGINEERINGLIGHTINGHEATINGWEAPONSBLASTING
G
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SECTION G — PHYSICS
H
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SECTION H — ELECTRICITY

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