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IPC-Stelle: C30B 13/18 2-Punkt Untergruppe [Version 2024.01 (aktuell), Sprache EN - English]

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Hierarchielinien

DEKLA-Gruppen

Symbol		Titel
A Hierarchieinformationen		HUMAN NECESSITIES
B Hierarchieinformationen		PERFORMING OPERATIONS; TRANSPORTING
C Hierarchieinformationen		CHEMISTRY; METALLURGY
C01 Hierarchieinformationen		CHEMISTRY
C01 Hierarchieinformationen		INORGANIC CHEMISTRY
C02 Hierarchieinformationen		TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
C03 Hierarchieinformationen		GLASS; MINERAL OR SLAG WOOL
C04 Hierarchieinformationen		CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES [4]
C05 Hierarchieinformationen		FERTILISERS; MANUFACTURE THEREOF [4]
C06 Hierarchieinformationen		EXPLOSIVES; MATCHES
C07 Hierarchieinformationen		ORGANIC CHEMISTRY [2]
C08 Hierarchieinformationen		ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
C09 Hierarchieinformationen		DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
C10 Hierarchieinformationen		PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
C11 Hierarchieinformationen		ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
C12 Hierarchieinformationen		BIOCHEMISTRY; BEER; SPIRITS; WINE; VINEGAR; MICROBIOLOGY; ENZYMOLOGY; MUTATION OR GENETIC ENGINEERING
C13 Hierarchieinformationen		SUGAR INDUSTRY [4]
C14 Hierarchieinformationen		SKINS; HIDES; PELTS OR LEATHER
C21 Hierarchieinformationen		METALLURGY
C21 Hierarchieinformationen		METALLURGY OF IRON
C22 Hierarchieinformationen		METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
C23 Hierarchieinformationen		COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL [2]
C25 Hierarchieinformationen		ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR [4]
C30 Hierarchieinformationen		CRYSTAL GROWTH [3]
C30B Hierarchieinformationen		SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J 3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H01L, H10); APPARATUS THEREFOR [3]
C30B 1/00		Single-crystal growth from solids or gels [3]
C30B 1/00 Hierarchieinformationen		Single-crystal growth directly from the solid state (unidirectional demixing of eutectoid materials C30B 3/00; under a protective fluid C30B 27/00) [3, 2006.01]
C30B 3/00 Hierarchieinformationen		Unidirectional demixing of eutectoid materials [3, 2006.01]
C30B 5/00 Hierarchieinformationen		Single-crystal growth from gels (under a protective fluid C30B 27/00) [3, 2006.01]
C30B 7/00		Single-crystal growth from liquids; Unidirectional solidification of eutectic materials [3]
C30B 7/00 Hierarchieinformationen		Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions (from molten solvents C30B 9/00; by normal or gradient freezing C30B 11/00; under a protective fluid C30B 27/00) [3, 2006.01]
C30B 9/00 Hierarchieinformationen		Single-crystal growth from melt solutions using molten solvents (by normal or gradient freezing C30B 11/00; by zone-melting C30B 13/00; by crystal pulling C30B 15/00; on immersed seed crystal C30B 17/00; by liquid phase epitaxial growth C30B 19/00; under a protective fluid C30B 27/00) [3, 2006.01]
C30B 11/00 Hierarchieinformationen		Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method (C30B 13/00, C30B 15/00, C30B 17/00, C30B 19/00 take precedence; under a protective fluid C30B 27/00) [3, 2006.01]
C30B 13/00 Hierarchieinformationen		Single-crystal growth by zone-melting; Refining by zone-melting (C30B 17/00 takes precedence; by changing the cross-section of the treated solid C30B 15/00; under a protective fluid C30B 27/00; for the growth of homogeneous polycrystalline material with defined structure C30B 28/00) [3, 5, 2006.01]
C30B 13/02 Hierarchieinformationen		. Zone-melting with a solvent, e.g. travelling solvent process [3, 2006.01]
C30B 13/04 Hierarchieinformationen		. Homogenisation by zone-levelling [3, 2006.01]
C30B 13/06 Hierarchieinformationen		. the molten zone not extending over the whole cross-section [3, 2006.01]
C30B 13/08 Hierarchieinformationen		. adding crystallising materials or reactants forming it in situ to the molten zone [3, 2006.01]
C30B 13/10 Hierarchieinformationen		. . with addition of doping materials [3, 2006.01]
C30B 13/12 Hierarchieinformationen		. . . in the gaseous or vapour state [3, 2006.01]
C30B 13/14 Hierarchieinformationen		. Crucibles or vessels [3, 2006.01]
C30B 13/16 Hierarchieinformationen		. Heating of the molten zone [3, 2006.01]
C30B 13/18 Hierarchieinformationen		. . the heating element being in contact with, or immersed in, the molten zone [3, 2006.01]
C30B 13/20 Hierarchieinformationen		. . by induction, e.g. hot wire technique (C30B 13/18 takes precedence) [3, 2006.01]
C30B 13/22 Hierarchieinformationen		. . by irradiation or electric discharge [3, 2006.01]
C30B 13/24 Hierarchieinformationen		. . . using electromagnetic waves [3, 2006.01]
C30B 13/26 Hierarchieinformationen		. Stirring of the molten zone [3, 2006.01]
C30B 13/28 Hierarchieinformationen		. Controlling or regulating [3, 2006.01]
C30B 13/30 Hierarchieinformationen		. . Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal [3, 2006.01]
C30B 13/32 Hierarchieinformationen		. Mechanisms for moving either the charge or the heater [3, 2006.01]
C30B 13/34 Hierarchieinformationen		. characterised by the seed, e.g. by its crystallographic orientation [3, 2006.01]
C30B 15/00 Hierarchieinformationen		Single-crystal growth by pulling from a melt, e.g. Czochralski method (under a protective fluid C30B 27/00) [3, 2006.01]
C30B 17/00 Hierarchieinformationen		Single-crystal growth on to a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method (C30B 15/00 takes precedence) [3, 2006.01]
C30B 19/00 Hierarchieinformationen		Liquid-phase epitaxial-layer growth [3, 2006.01]
C30B 21/00 Hierarchieinformationen		Unidirectional solidification of eutectic materials [3, 2006.01]
C30B 23/00		Single-crystal growth from vapours [3]
C30B 23/00 Hierarchieinformationen		Single-crystal growth by condensing evaporated or sublimed materials [3, 2006.01]
C30B 25/00 Hierarchieinformationen		Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth [3, 2006.01]
C30B 27/00
C30B 27/00 Hierarchieinformationen		Single-crystal growth under a protective fluid [3, 2006.01]
C30B 28/00 Hierarchieinformationen		Production of homogeneous polycrystalline material with defined structure [5, 2006.01]
C30B 29/00 Hierarchieinformationen		Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape [3, 5, 2006.01]
C30B 30/00 Hierarchieinformationen		Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions [5, 2006.01]
C30B 31/00		After-treatment of single crystals or homogeneous polycrystalline material with defined structure [3, 5]
C30B 31/00 Hierarchieinformationen		Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor [3, 5, 2006.01]
C30B 33/00 Hierarchieinformationen		After-treatment of single crystals or homogeneous polycrystalline material with defined structure (C30B 31/00 takes precedence) [3, 5, 2006.01]
C30B 35/00
C30B 35/00 Hierarchieinformationen		Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure [3, 5, 2006.01]
C40 Hierarchieinformationen		COMBINATORIAL TECHNOLOGY [2006.01]
C40 Hierarchieinformationen		COMBINATORIAL TECHNOLOGY [2006.01]
C99 Hierarchieinformationen		SUBJECT MATTER NOT OTHERWISE PROVIDED FOR IN THIS SECTION [2006.01]
D Hierarchieinformationen		TEXTILES; PAPER
E Hierarchieinformationen		FIXED CONSTRUCTIONS
F Hierarchieinformationen		MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
G Hierarchieinformationen		PHYSICS
H Hierarchieinformationen		ELECTRICITY

Zu vergleichende IPC-Stelle: Es wurden im Verzeichnis noch keine IPC-Stellen für die Vergleichsansicht vorgemerkt. [Version , Sprache ]