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Dokument US020040004249A1 (Seiten: 16)

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Bibliografische Daten Dokument US020040004249A1 (Seiten: 16)
INID	Kriterium	Feld	Inhalt
54	Titel	TI	[EN] High-voltage semiconductor component
71/73	Anmelder/Inhaber	PA	AHLERS DIRK ; DEBOY GERALD ; RUEB MICHAEL ; STRACK HELMUT ; WEBER HANS MARTIN
72	Erfinder	IN	AHLERS DIRK, DE ; DEBOY GERALD, DE ; RUEB MICHAEL, AT ; STRACK HELMUT, DE ; WEBER HANS MARTIN, AT
22/96	Anmeldedatum	AD	06.06.2003
21	Anmeldenummer	AN	45583403
	Anmeldeland	AC	US
	Veröffentlichungsdatum	PUB	08.01.2004
33 31 32	Priorität	PRC PRN PRD	US 78602201 20011109
51	IPC-Hauptklasse	ICM	H01L 29/76
51	IPC-Nebenklasse	ICS
	IPC-Zusatzklasse	ICA
	IPC-Indexklasse	ICI
	Gemeinsame Patentklassifikation	CPC	H01L 29/0634 H01L 29/0696 H01L 29/41766 H01L 29/4232 H01L 29/4238 H01L 29/7801 H01L 29/7802 H01L 29/7811 H01L 29/7816
	MCD-Hauptklasse	MCM
	MCD-Nebenklasse	MCS	H01L 29/06 H01L 29/78
	MCD-Zusatzklasse	MCA	H01L 29/417 H01L 29/423
57	Zusammenfassung	AB	[EN] A semiconductor component having a semiconductor body comprises a blocking pn junction, a source zone of a first conductivity type and bordering on a zone forming the blocking pn junction of a second conductivity type complementary to the first conductivity type, and a drain zone of the first conductivity type. The side of the zone of the second conductivity type faces the drain zone forming a first surface, and in the region between the first surface and a second surface areas of the first and second conductivity type are nested in one another. The areas of the first and second conductivity type are variably so doped that near the first surface doping atoms of the second conductivity type predominate, and near the second surface doping atoms of the first conductivity type predominate. Furthermore a plurality of floating zones of the first and second conductivity type is provided.
56	Entgegengehaltene Patentdokumente/Zitate, in Recherche ermittelt	CT	US000003171068A US000003925803A US000003961356A US000004003072A US000004055884A US000004072975A US000004101922A US000004145700A US000004320410A US000004345265A US000004366495A US000004376286A US000004404575A US000004417385A US000004561003A US000004593302A US000004748103A US000004754310A US000004775881A US000004777149A US000004895810A US000004914058A US000004926226A US000004941026A US000004974059A US000004975782A US000004994871A US000005008725A US000005010025A US000005019522A US000005045903A US000005072269A US000005089434A US000005126807A US000005182234A US000005216275A US000005231474A US000005283201A US000005340315A US000005438215A US000005473180A US000005559353A US000005648283A US000005747831A US000005801417A US000005883411A US000005973360A US000006037631A US000006291856B1 US000006667514B2 US020010050549A1 US020010053568A1
56	Entgegengehaltene Patentdokumente/Zitate, vom Anmelder genannt	CT
56	Entgegengehaltene Nichtpatentliteratur/Zitate, in Recherche ermittelt	CTNP
56	Entgegengehaltene Nichtpatentliteratur/Zitate, vom Anmelder genannt	CTNP
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	Prüfstoff-IPC	ICP	H01L 29/76 H01L 29/78