Bibliografische Daten

Dokument US000006828609B2 (Seiten: 18)

Bibliografische Daten Dokument US000006828609B2 (Seiten: 18)
INID Kriterium Feld Inhalt
54 Titel TI [EN] High-voltage semiconductor component
71/73 Anmelder/Inhaber PA INFINEON TECHNOLOGIES AG, DE
72 Erfinder IN AHLERS DIRK, DE ; DEBOY GERALD, DE ; RUEB MICHAEL, AT ; STRACK HELMUT, DE ; WEBER HANS MARTIN, AT
22/96 Anmeldedatum AD 06.06.2003
21 Anmeldenummer AN 45583403
Anmeldeland AC US
Veröffentlichungsdatum PUB 07.12.2004
33
31
32
Priorität PRC
PRN
PRD
US
78602201
20011109
51 IPC-Hauptklasse ICM H01L 29/80
51 IPC-Nebenklasse ICS
IPC-Zusatzklasse ICA
IPC-Indexklasse ICI
Gemeinsame Patentklassifikation CPC Neues Fenster: Externer Link Gemeinsame Patentklassifikation H01L 29/0634 H01L 29/0634
Neues Fenster: Externer Link Gemeinsame Patentklassifikation H01L 29/0696 H01L 29/0696
Neues Fenster: Externer Link Gemeinsame Patentklassifikation H01L 29/41766 H01L 29/41766
Neues Fenster: Externer Link Gemeinsame Patentklassifikation H01L 29/4232 H01L 29/4232
Neues Fenster: Externer Link Gemeinsame Patentklassifikation H01L 29/4238 H01L 29/4238
Neues Fenster: Externer Link Gemeinsame Patentklassifikation H01L 29/7801 H01L 29/7801
Neues Fenster: Externer Link Gemeinsame Patentklassifikation H01L 29/7802 H01L 29/7802
Neues Fenster: Externer Link Gemeinsame Patentklassifikation H01L 29/7811 H01L 29/7811
Neues Fenster: Externer Link Gemeinsame Patentklassifikation H01L 29/7816 H01L 29/7816
MCD-Hauptklasse MCM
MCD-Nebenklasse MCS H01L 29/06
H01L 29/78
MCD-Zusatzklasse MCA H01L 29/417
H01L 29/423
57 Zusammenfassung AB [EN] A semiconductor component having a semiconductor body comprises a blocking pn junction, a source zone of a first conductivity type and bordering on a zone forming the blocking pn junction of a second conductivity type complementary to the first conductivity type, and a drain zone of the first conductivity type. The side of the zone of the second conductivity type faces the drain zone forming a first surface, and in the region between the first surface and a second surface areas of the first and second conductivity type are nested in one another. The areas of the first and second conductivity type are variably so doped that near the first surface doping atoms of the second conductivity type predominate, and near the second surface doping atoms of the first conductivity type predominate. Furthermore a plurality of floating zones of the first and second conductivity type is provided.
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