| 54 |
Title |
TI |
[DE] HOCHSPANNUNGS-HALBLEITERBAUELEMENT
[EN] HIGH-VOLTAGE SEMICONDUCTOR COMPONENT
[FR] ELEMENT SEMI-CONDUCTEUR HAUTE TENSION |
| 71/73 |
Applicant/owner |
PA |
AHLERS DIRK, DE
;
DEBOY GERALD, DE
;
GRAF HEIMO, AT
;
RUEB MICHAEL, AT
;
SIEMENS AG, DE
;
STENGL JENS PEER, DE
;
STRACK HELMUT, DE
;
WEBER HANS, DE
|
| 72 |
Inventor |
IN |
AHLERS DIRK, DE
;
DEBOY GERALD, DE
;
GRAF HEIMO, AT
;
RUEB MICHAEL, AT
;
STENGL JENS-PEER, DE
;
STRACK HELMUT, DE
;
WEBER HANS, DE
|
| 22/96 |
Application date |
AD |
Apr 22, 1999 |
| 21 |
Application number |
AN |
9901218 |
|
Country of application |
AC |
DE |
|
Publication date |
PUB |
Mar 16, 2000 |
33
31
32 |
Priority data |
PRC
PRN
PRD |
DE
19840032
19980902
|
| 51 |
IPC main class |
ICM |
H01L 29/78
|
| 51 |
IPC secondary class |
ICS |
H01L 21/336
H01L 29/06
|
|
IPC additional class |
ICA |
|
|
IPC index class |
ICI |
|
|
Cooperative patent classification |
CPC |
H01L 29/0634
H01L 29/0696
H01L 29/1095
H01L 29/41766
H01L 29/4232
H01L 29/4236
H01L 29/4238
H01L 29/772
H01L 29/7801
H01L 29/7802
H01L 29/7811
H01L 29/7816
H01L 29/7825
|
|
MCD main class |
MCM |
|
|
MCD secondary class |
MCS |
H01L 21/336
(2006.01)
H01L 29/06
(2006.01)
H01L 29/78
(2006.01)
|
|
MCD additional class |
MCA |
H01L 29/417
(2006.01)
H01L 29/423
(2006.01)
|
| 57 |
Abstract |
AB |
[DE] Die Erfindung betrifft ein Halbleiterbauelement mit in einem Halbleiterkörper alternierend angeordneten Halbleitergebieten (4, 5) abwechselnd unterschiedlichen Leitungstyps, die sich im Halbleiterkörper von wenigstens einer ersten Zone (6) bis in die Nähe zu einer zweiten Zone (1) erstrecken und eine variable Dotierung haben, so dass das elektrische Feld einen von beiden Zonen (6, 1) aus ansteigenden Verlauf hat.
[EN] The invention relates to a high-voltage semiconductor component comprising semiconductor areas (4, 5) of alternating, different conductivity types which are arranged in a semiconductor body in an alternating manner. In the semiconductor body said semiconductor areas extend from at least one first zone (6) to near a second zone (1) and are variably doped so that the electric field increases progressively from one zone to the other (6, 1).
[FR] L'invention concerne un élément semi-conducteur constitué de zones semi-conductrices (4, 5) présentant différents types de conduction. Ces zones, disposées en alternance, s'étendent dans ledit corps depuis au moins une première zone (6) jusqu'à proximité d'une seconde zone (1) et possèdent un dopage différent, de sorte que le champ électrique augmente progressivement de l'une à l'autre (6, 1). |
| 56 |
Cited documents identified in the search |
CT |
DE000004309764A1
EP000000114435A1
EP000000634798A1
GB000002309336A
US000004801995A
US000005216275A
US000005726469A
WO001997029518A1
|
| 56 |
Cited documents indicated by the applicant |
CT |
|
| 56 |
Cited non-patent literature identified in the search |
CTNP |
|
| 56 |
Cited non-patent literature indicated by the applicant |
CTNP |
|
|
Citing documents |
|
Determine documents
|
|
Sequence listings |
|
|
|
Search file IPC |
ICP |
H01L 29/06 E
H01L 29/78
|
