| 54 |
Titel |
TI |
[EN] FAILURE STRUCTURE IN SEMICONDUCTOR DEVICE |
| 71/73 |
Anmelder/Inhaber |
PA |
INFINEON TECHNOLOGIES AG, DE
|
| 72 |
Erfinder |
IN |
BASLER THOMAS, DE
;
HUERNER ANDREAS, DE
;
LEENDERTZ CASPAR, DE
;
PETERS DETHARD, DE
|
| 22/96 |
Anmeldedatum |
AD |
27.11.2019 |
| 21 |
Anmeldenummer |
AN |
201916697580 |
|
Anmeldeland |
AC |
US |
|
Veröffentlichungsdatum |
PUB |
27.05.2021 |
33
31
32 |
Priorität |
PRC
PRN
PRD |
|
| 51 |
IPC-Hauptklasse |
ICM |
H01L 23/525
(2006.01)
|
| 51 |
IPC-Nebenklasse |
ICS |
H01L 23/62
(2006.01)
H01L 29/16
(2006.01)
|
|
IPC-Zusatzklasse |
ICA |
|
|
IPC-Indexklasse |
ICI |
|
|
Gemeinsame Patentklassifikation |
CPC |
H01L 23/525
H01L 23/5252
H01L 23/5256
H01L 23/62
H01L 29/1608
|
|
MCD-Hauptklasse |
MCM |
H01L 23/525
(2006.01)
|
|
MCD-Nebenklasse |
MCS |
H01L 23/62
(2006.01)
H01L 29/16
(2006.01)
|
|
MCD-Zusatzklasse |
MCA |
|
| 57 |
Zusammenfassung |
AB |
[EN] A semiconductor device is provided. In an embodiment, the semiconductor device comprises a control region, a first power region, a second power region, an isolation region and/or a short circuit structure. The control region comprises a control terminal. The first power region comprises a first power terminal. The second power region comprises a second power terminal. The isolation region is between the control region and the first power region. The short circuit structure extends from the first power region, through the isolation region, to the control region. The short circuit structure is configured to form a low-resistive connection between the control region and the first power region during a failure state of the semiconductor device. |
| 56 |
Entgegengehaltene Patentdokumente/Zitate,
in Recherche ermittelt |
CT |
|
| 56 |
Entgegengehaltene Patentdokumente/Zitate,
vom Anmelder genannt |
CT |
|
| 56 |
Entgegengehaltene Nichtpatentliteratur/Zitate,
in Recherche ermittelt |
CTNP |
|
| 56 |
Entgegengehaltene Nichtpatentliteratur/Zitate,
vom Anmelder genannt |
CTNP |
|
|
Zitierende Dokumente |
|
Dokumente ermitteln
|
|
Sequenzprotokoll |
|
|
|
Prüfstoff-IPC |
ICP |
H01L 23/525
H01L 23/62
|
