54 |
Title |
TI |
[EN] Silicon carbide device with a stripe-shaped trench gate structure |
71/73 |
Applicant/owner |
PA |
INFINEON TECHNOLOGIES AG, DE
|
72 |
Inventor |
IN |
BASLER THOMAS, DE
;
ELLINGHAUS PAUL, DE
;
ELPELT RUDOLF, DE
;
HELL MICHAEL, DE
;
KONRATH JENS PETER, AT
;
LEENDERTZ CASPAR, DE
;
NIU SHIQIN, DE
;
PETERS DETHARD, DE
;
SCHRAML KONRAD, DE
;
ZIPPELIUS BERND LEONHARD, DE
|
22/96 |
Application date |
AD |
Dec 28, 2023 |
21 |
Application number |
AN |
202318398823 |
|
Country of application |
AC |
US |
|
Publication date |
PUB |
Apr 1, 2025 |
33 31 32 |
Priority data |
PRC PRN PRD |
DE
102019121859
Aug 14, 2019
|
33 31 32 |
PRC PRN PRD |
US
202016986338
Aug 6, 2020
|
33 31 32 |
PRC PRN PRD |
US
202218073860
Dec 2, 2022
|
51 |
IPC main class |
ICM |
|
51 |
IPC secondary class |
ICS |
|
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IPC additional class |
ICA |
|
|
IPC index class |
ICI |
|
|
Cooperative patent classification |
CPC |
H10D 12/031
H10D 12/481
H10D 30/60
H10D 30/668
H10D 30/669
H10D 62/10
H10D 62/106
H10D 62/107
H10D 62/127
H10D 62/393
H10D 62/8325
H10D 62/8503
H10D 64/513
H10D 64/519
H10D 64/66
Y02B 70/10
|
|
MCD main class |
MCM |
|
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MCD secondary class |
MCS |
|
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MCD additional class |
MCA |
|
57 |
Abstract |
AB |
[EN] A silicon carbide device includes: a transistor cell having a stripe-shaped trench gate structure extending from a first surface into a silicon carbide body, the gate structure having a gate length along a lateral first direction, a bottom surface and a first gate sidewall of the gate structure being connected via a first bottom edge of the gate structure; at least one source region of a first conductivity type in contact with the first gate sidewall; and a shielding region of a second conductivity type in contact with the first bottom edge of the gate structure across at least 20% of the gate length. No source regions of the first conductivity type are in contact with a second gate sidewall of the gate structure. |
56 |
Cited documents identified in the search |
CT |
US000010886370B2 US000011552173B2
|
56 |
Cited documents indicated by the applicant |
CT |
DE102010027886A1 DE102016124973A1 DE102017110508A1 DE102017110969A1 JP002018195782A US000009136372B2 US020070114602A1 US020090114969A1 US020110018029A1 US020140021484A1 US020170345905A1 US020180175150A1 US020180175153A1 US020180308938A1 US020190081170A1 US020190296141A1 US020200098869A1 US020200219978A1 US020210050421A1
|
56 |
Cited non-patent literature identified in the search |
CTNP |
|
56 |
Cited non-patent literature indicated by the applicant |
CTNP |
|
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Citing documents |
|
Determine documents
|
|
Sequence listings |
|
|
|
Search file IPC |
ICP |
H10D 48/00
|