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Bibliographic data

Document US000012266694B2 (Pages: 22)

Bibliographic data Document US000012266694B2 (Pages: 22)
INID Criterion Field Contents
54 Title TI [EN] Silicon carbide device with a stripe-shaped trench gate structure
71/73 Applicant/owner PA INFINEON TECHNOLOGIES AG, DE
72 Inventor IN BASLER THOMAS, DE ; ELLINGHAUS PAUL, DE ; ELPELT RUDOLF, DE ; HELL MICHAEL, DE ; KONRATH JENS PETER, AT ; LEENDERTZ CASPAR, DE ; NIU SHIQIN, DE ; PETERS DETHARD, DE ; SCHRAML KONRAD, DE ; ZIPPELIUS BERND LEONHARD, DE
22/96 Application date AD Dec 28, 2023
21 Application number AN 202318398823
Country of application AC US
Publication date PUB Apr 1, 2025
33
31
32
Priority data PRC
PRN
PRD
DE
102019121859
Aug 14, 2019
33
31
32
PRC
PRN
PRD
US
202016986338
Aug 6, 2020
33
31
32
PRC
PRN
PRD
US
202218073860
Dec 2, 2022
51 IPC main class ICM
51 IPC secondary class ICS
IPC additional class ICA
IPC index class ICI
Cooperative patent classification CPC H10D 12/031
H10D 12/481
H10D 30/60
H10D 30/668
H10D 30/669
H10D 62/10
H10D 62/106
H10D 62/107
H10D 62/127
H10D 62/393
H10D 62/8325
H10D 62/8503
H10D 64/513
H10D 64/519
H10D 64/66
Y02B 70/10
MCD main class MCM
MCD secondary class MCS
MCD additional class MCA
57 Abstract AB [EN] A silicon carbide device includes: a transistor cell having a stripe-shaped trench gate structure extending from a first surface into a silicon carbide body, the gate structure having a gate length along a lateral first direction, a bottom surface and a first gate sidewall of the gate structure being connected via a first bottom edge of the gate structure; at least one source region of a first conductivity type in contact with the first gate sidewall; and a shielding region of a second conductivity type in contact with the first bottom edge of the gate structure across at least 20% of the gate length. No source regions of the first conductivity type are in contact with a second gate sidewall of the gate structure.
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56 Cited non-patent literature indicated by the applicant CTNP
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