| 54 |
Titel |
TI |
[EN] Silicon carbide device with a stripe-shaped trench gate structure |
| 71/73 |
Anmelder/Inhaber |
PA |
INFINEON TECHNOLOGIES AG, DE
|
| 72 |
Erfinder |
IN |
BASLER THOMAS, DE
;
ELLINGHAUS PAUL, DE
;
ELPELT RUDOLF, DE
;
HELL MICHAEL, DE
;
KONRATH JENS PETER, AT
;
LEENDERTZ CASPAR, DE
;
NIU SHIQIN, DE
;
PETERS DETHARD, DE
;
SCHRAML KONRAD, DE
;
ZIPPELIUS BERND LEONHARD, DE
|
| 22/96 |
Anmeldedatum |
AD |
28.12.2023 |
| 21 |
Anmeldenummer |
AN |
202318398823 |
|
Anmeldeland |
AC |
US |
|
Veröffentlichungsdatum |
PUB |
01.04.2025 |
33
31
32 |
Priorität |
PRC
PRN
PRD |
DE
102019121859
14.08.2019
|
33
31
32 |
PRC
PRN
PRD |
US
202016986338
06.08.2020
|
33
31
32 |
PRC
PRN
PRD |
US
202218073860
02.12.2022
|
| 51 |
IPC-Hauptklasse |
ICM |
|
| 51 |
IPC-Nebenklasse |
ICS |
|
|
IPC-Zusatzklasse |
ICA |
|
|
IPC-Indexklasse |
ICI |
|
|
Gemeinsame Patentklassifikation |
CPC |
H10D 12/031
H10D 12/481
H10D 30/60
H10D 30/668
H10D 30/669
H10D 62/10
H10D 62/106
H10D 62/107
H10D 62/127
H10D 62/393
H10D 62/8325
H10D 62/8503
H10D 64/513
H10D 64/519
H10D 64/66
Y02B 70/10
|
|
MCD-Hauptklasse |
MCM |
|
|
MCD-Nebenklasse |
MCS |
|
|
MCD-Zusatzklasse |
MCA |
|
| 57 |
Zusammenfassung |
AB |
[EN] A silicon carbide device includes: a transistor cell having a stripe-shaped trench gate structure extending from a first surface into a silicon carbide body, the gate structure having a gate length along a lateral first direction, a bottom surface and a first gate sidewall of the gate structure being connected via a first bottom edge of the gate structure; at least one source region of a first conductivity type in contact with the first gate sidewall; and a shielding region of a second conductivity type in contact with the first bottom edge of the gate structure across at least 20% of the gate length. No source regions of the first conductivity type are in contact with a second gate sidewall of the gate structure. |
| 56 |
Entgegengehaltene Patentdokumente/Zitate,
in Recherche ermittelt |
CT |
US000010886370B2
US000011552173B2
|
| 56 |
Entgegengehaltene Patentdokumente/Zitate,
vom Anmelder genannt |
CT |
DE102010027886A1
DE102016124973A1
DE102017110508A1
DE102017110969A1
JP002018195782A
US000009136372B2
US020070114602A1
US020090114969A1
US020110018029A1
US020140021484A1
US020170345905A1
US020180175150A1
US020180175153A1
US020180308938A1
US020190081170A1
US020190296141A1
US020200098869A1
US020200219978A1
US020210050421A1
|
| 56 |
Entgegengehaltene Nichtpatentliteratur/Zitate,
in Recherche ermittelt |
CTNP |
|
| 56 |
Entgegengehaltene Nichtpatentliteratur/Zitate,
vom Anmelder genannt |
CTNP |
|
|
Zitierende Dokumente |
|
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|
|
Sequenzprotokoll |
|
|
|
Prüfstoff-IPC |
ICP |
H10D 48/00
|
