| 54 |
Title |
TI |
[EN] Transistor Device with High Current Robustness |
| 71/73 |
Applicant/owner |
PA |
INFINEON TECHNOLOGIES AG, DE
|
| 72 |
Inventor |
IN |
BABURSKE ROMAN, DE
;
BHOJANI RITESHKUMAR, DE
;
LUTZ JOSEF, DE
;
NIEDERNOSTHEIDE FRANZ JOSEF, DE
;
SCHULZE HANS JOACHIM, DE
|
| 22/96 |
Application date |
AD |
Aug 22, 2017 |
| 21 |
Application number |
AN |
201715682807 |
|
Country of application |
AC |
US |
|
Publication date |
PUB |
Mar 1, 2018 |
33
31
32 |
Priority data |
PRC
PRN
PRD |
DE
102016115801
20160825
|
| 51 |
IPC main class |
ICM |
H01L 29/739
(2006.01)
|
| 51 |
IPC secondary class |
ICS |
H01L 27/02
(2006.01)
H03K 17/16
(2006.01)
|
|
IPC additional class |
ICA |
|
|
IPC index class |
ICI |
|
|
Cooperative patent classification |
CPC |
H01L 27/0222
H01L 29/0603
H01L 29/0619
H01L 29/0684
H01L 29/0696
H01L 29/0834
H01L 29/36
H01L 29/7393
H01L 29/7397
H03K 17/16
|
|
MCD main class |
MCM |
H01L 29/739
(2006.01)
|
|
MCD secondary class |
MCS |
H01L 27/02
(2006.01)
H03K 17/16
(2006.01)
|
|
MCD additional class |
MCA |
|
| 57 |
Abstract |
AB |
[EN] A transistor device includes a first emitter region of a first doping type, a second emitter region of a second doping type, a body of the second doping type, a drift region of the first doping type, a field-stop region of the first doping type, at least one boost structure, and a gate electrode. The boost structure is arranged between the field-stop region and the second emitter region. The at least one boost structure includes a base region of the first doping type and at least one auxiliary emitter region of the second doping type separated from the second emitter region by the base region. An overall dopant dose in the drift region and the field-stop region in a current flow direction of the transistor device is higher than a breakthrough charge of a semiconductor material of the drift region and the field-stop region. |
| 56 |
Cited documents identified in the search |
CT |
|
| 56 |
Cited documents indicated by the applicant |
CT |
|
| 56 |
Cited non-patent literature identified in the search |
CTNP |
|
| 56 |
Cited non-patent literature indicated by the applicant |
CTNP |
|
|
Citing documents |
|
US000010418470B2
US020180261594A1
US020190081162A1
|
|
Sequence listings |
|
|
|
Search file IPC |
ICP |
H01L 21/331
H01L 29/06
H01L 29/08
H01L 29/739
H03K 17/16
|
