| 54 |
Titel |
TI |
[EN] Transistor Device with High Current Robustness |
| 71/73 |
Anmelder/Inhaber |
PA |
INFINEON TECHNOLOGIES AG, DE
|
| 72 |
Erfinder |
IN |
BABURSKE ROMAN, DE
;
BHOJANI RITESHKUMAR, DE
;
LUTZ JOSEF, DE
;
NIEDERNOSTHEIDE FRANZ JOSEF, DE
;
SCHULZE HANS JOACHIM, DE
|
| 22/96 |
Anmeldedatum |
AD |
22.08.2017 |
| 21 |
Anmeldenummer |
AN |
201715682807 |
|
Anmeldeland |
AC |
US |
|
Veröffentlichungsdatum |
PUB |
01.03.2018 |
33
31
32 |
Priorität |
PRC
PRN
PRD |
DE
102016115801
20160825
|
| 51 |
IPC-Hauptklasse |
ICM |
H01L 29/739
(2006.01)
|
| 51 |
IPC-Nebenklasse |
ICS |
H01L 27/02
(2006.01)
H03K 17/16
(2006.01)
|
|
IPC-Zusatzklasse |
ICA |
|
|
IPC-Indexklasse |
ICI |
|
|
Gemeinsame Patentklassifikation |
CPC |
H03K 17/16
H10D 12/411
H10D 12/481
H10D 62/10
H10D 62/106
H10D 62/124
H10D 62/127
H10D 62/142
H10D 62/60
H10D 89/215
|
|
MCD-Hauptklasse |
MCM |
H01L 29/739
(2006.01)
|
|
MCD-Nebenklasse |
MCS |
H01L 27/02
(2006.01)
H03K 17/16
(2006.01)
|
|
MCD-Zusatzklasse |
MCA |
|
| 57 |
Zusammenfassung |
AB |
[EN] A transistor device includes a first emitter region of a first doping type, a second emitter region of a second doping type, a body of the second doping type, a drift region of the first doping type, a field-stop region of the first doping type, at least one boost structure, and a gate electrode. The boost structure is arranged between the field-stop region and the second emitter region. The at least one boost structure includes a base region of the first doping type and at least one auxiliary emitter region of the second doping type separated from the second emitter region by the base region. An overall dopant dose in the drift region and the field-stop region in a current flow direction of the transistor device is higher than a breakthrough charge of a semiconductor material of the drift region and the field-stop region. |
| 56 |
Entgegengehaltene Patentdokumente/Zitate,
in Recherche ermittelt |
CT |
|
| 56 |
Entgegengehaltene Patentdokumente/Zitate,
vom Anmelder genannt |
CT |
|
| 56 |
Entgegengehaltene Nichtpatentliteratur/Zitate,
in Recherche ermittelt |
CTNP |
|
| 56 |
Entgegengehaltene Nichtpatentliteratur/Zitate,
vom Anmelder genannt |
CTNP |
|
|
Zitierende Dokumente |
|
Dokumente ermitteln
|
|
Sequenzprotokoll |
|
|
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Prüfstoff-IPC |
ICP |
H01L 21/331
H01L 29/06
H01L 29/08
H01L 29/739
H03K 17/16
|
