| 54 |
Titel |
TI |
[EN] POWER SEMICONDUCTOR MODULE WITH SHORT-CIRCUIT FAILURE MODE |
| 71/73 |
Anmelder/Inhaber |
PA |
DANFOSS SILICON POWER GMBH, DE
|
| 72 |
Erfinder |
IN |
BECKER MARTIN, DE
;
EISELE RONALD, DE
;
KOCK MATHIAS, DE
;
LUTZ JOSEF, DE
;
OSTERWALD FRANK, DE
;
RUDZKI JACEK, DE
|
| 22/96 |
Anmeldedatum |
AD |
14.10.2015 |
| 21 |
Anmeldenummer |
AN |
201515520872 |
|
Anmeldeland |
AC |
US |
|
Veröffentlichungsdatum |
PUB |
23.11.2017 |
33
31
32 |
Priorität |
PRC
PRN
PRD |
DE
102014221687
24.10.2014
|
33
31
32 |
PRC
PRN
PRD |
EP
2015073745
14.10.2015
|
| 51 |
IPC-Hauptklasse |
ICM |
H01L 23/62
(2006.01)
|
| 51 |
IPC-Nebenklasse |
ICS |
H01L 23/00
(2006.01)
|
|
IPC-Zusatzklasse |
ICA |
|
|
IPC-Indexklasse |
ICI |
|
|
Gemeinsame Patentklassifikation |
CPC |
H01L 2224/45015
H01L 2224/45124
H01L 2224/45147
H01L 2224/4847
H01L 2224/48491
H01L 2224/85423
H01L 2224/85439
H01L 2224/85444
H01L 2224/85447
H01L 23/62
H01L 24/04
H01L 24/07
H01L 24/45
H01L 24/48
H01L 2924/00014
H01L 2924/13055
|
|
MCD-Hauptklasse |
MCM |
H01L 23/62
(2006.01)
|
|
MCD-Nebenklasse |
MCS |
H01L 23/00
(2006.01)
|
|
MCD-Zusatzklasse |
MCA |
|
| 57 |
Zusammenfassung |
AB |
[EN] A description is given of a power semiconductor module 10 which can be transferred from a normal operating mode to an explosion-free robust short-circuit failure mode. Said power semiconductor module 10 comprises a power semiconductor 1 having metallizations 3 which form potential areas and are separated by insulations and passivations on the top side 2 of said power semiconductor. Furthermore, an electrically conductive connecting layer is provided, on which at least one metal shaped body 4 which has a low lateral electrical resistance and is significantly thicker than the connecting layer is arranged, said at least one metal shaped body being applied by sintering of the connecting layer such that said metal shaped body is cohesively connected to the respective potential area. The metal shaped body 4 is embodied and designed with means for laterally homogenizing a current flowing through it in such a way that a lateral current flow component 5 is maintained until this module switches off in order to avoid an explosion, wherein the metal shaped body 4 has connections 6 having high-current capability. A transition from the operating mode to the robust failure mode then takes place in an explosion-free manner by virtue of the fact that the connections 6 are contact-connected and dimensioned in such a way that in the case of overload currents of greater than a multiple of the rated current of the power semiconductor 1, the operating mode changes to the short-circuit failure mode with connections 6 remaining on the metal shaped body 4 in an explosion-free manner without the formation of arcs. |
| 56 |
Entgegengehaltene Patentdokumente/Zitate,
in Recherche ermittelt |
CT |
JP000H09162229A
US000005506447A
US000006078092A
US000006215185B1
US020040166727A1
US020070052075A1
US020130053420A1
WO002013053420A1
|
| 56 |
Entgegengehaltene Patentdokumente/Zitate,
vom Anmelder genannt |
CT |
|
| 56 |
Entgegengehaltene Nichtpatentliteratur/Zitate,
in Recherche ermittelt |
CTNP |
English machine translation of WO2013/053420A1 of record. 9
|
| 56 |
Entgegengehaltene Nichtpatentliteratur/Zitate,
vom Anmelder genannt |
CTNP |
|
|
Zitierende Dokumente |
|
Dokumente ermitteln
|
|
Sequenzprotokoll |
|
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Prüfstoff-IPC |
ICP |
H01L 23/00
H01L 23/62
|
