| 54 |
Titel |
TI |
[EN] OPTOELECTRONIC INTEGRATED CIRCUIT |
| 71/73 |
Anmelder/Inhaber |
PA |
OPEL SOLAR INC, US
;
UNIV CONNECTICUT, US
|
| 72 |
Erfinder |
IN |
TAYLOR GEOFF W, US
|
| 22/96 |
Anmeldedatum |
AD |
06.03.2017 |
| 21 |
Anmeldenummer |
AN |
201715450400 |
|
Anmeldeland |
AC |
US |
|
Veröffentlichungsdatum |
PUB |
03.08.2017 |
33
31
32 |
Priorität |
PRC
PRN
PRD |
US
201414222841
24.03.2014
|
33
31
32 |
PRC
PRN
PRD |
US
201461962303
29.01.2014
|
| 51 |
IPC-Hauptklasse |
ICM |
H01S 5/10
(2006.01)
|
| 51 |
IPC-Nebenklasse |
ICS |
G02B 6/134
(2006.01)
G02B 6/13
(2006.01)
G02B 6/293
(2006.01)
H01L 31/0232
(2014.01)
H01L 31/0304
(2006.01)
H01L 31/0352
(2006.01)
H01L 31/112
(2006.01)
H01L 31/11
(2006.01)
H01L 31/18
(2006.01)
H01S 5/042
(2006.01)
H01S 5/062
(2006.01)
H01S 5/20
(2006.01)
H01S 5/30
(2006.01)
|
|
IPC-Zusatzklasse |
ICA |
|
|
IPC-Indexklasse |
ICI |
|
|
Gemeinsame Patentklassifikation |
CPC |
G02B 6/131
G02B 6/1347
G02B 6/29338
H01S 5/0225
H01S 5/0421
H01S 5/0424
H01S 5/0425
H01S 5/04257
H01S 5/06203
H01S 5/06226
H01S 5/0625
H01S 5/1028
H01S 5/1032
H01S 5/1042
H01S 5/1071
H01S 5/1075
H01S 5/125
H01S 5/183
H01S 5/187
H01S 5/2027
H01S 5/2063
H01S 5/2086
H01S 5/222
H01S 5/3054
H01S 5/309
H01S 5/34313
H10D 18/00
H10D 18/01
H10D 30/4732
H10D 62/141
H10D 62/343
H10D 62/60
H10D 62/815
H10D 84/01
H10D 84/05
H10D 84/82
H10F 30/245
H10F 30/263
H10F 30/2877
H10F 39/103
H10F 71/1272
H10F 77/1248
H10F 77/143
H10F 77/146
H10F 77/413
H10H 20/812
H10H 20/8142
|
|
MCD-Hauptklasse |
MCM |
H01S 5/10
(2006.01)
|
|
MCD-Nebenklasse |
MCS |
G02B 6/134
(2006.01)
G02B 6/13
(2006.01)
G02B 6/293
(2006.01)
H01L 31/0232
(2014.01)
H01L 31/0304
(2006.01)
H01L 31/0352
(2006.01)
H01L 31/112
(2006.01)
H01L 31/11
(2006.01)
H01L 31/18
(2006.01)
H01S 5/042
(2006.01)
H01S 5/062
(2006.01)
H01S 5/20
(2006.01)
H01S 5/30
(2006.01)
|
|
MCD-Zusatzklasse |
MCA |
|
| 57 |
Zusammenfassung |
AB |
[EN] A semiconductor device includes an n-type ohmic contact layer, cathode and anode electrodes, p-type and n-type modulation doped quantum well (QW) structures, and first and second ion implant regions. The anode electrode is formed on the first ion implant region that contacts the p-type modulation doped QW structure and the cathode electrode is formed by patterning the first and second ion implant regions and the n-type ohmic contact layer. The semiconductor device is configured to operate as at least one of a diode laser and a diode detector. As the diode laser, the semiconductor device emits photons. As the diode detector, the semiconductor device receives an input optical light and generates a photocurrent. |
| 56 |
Entgegengehaltene Patentdokumente/Zitate,
in Recherche ermittelt |
CT |
US000006965128B2
US020020121647A1
|
| 56 |
Entgegengehaltene Patentdokumente/Zitate,
vom Anmelder genannt |
CT |
|
| 56 |
Entgegengehaltene Nichtpatentliteratur/Zitate,
in Recherche ermittelt |
CTNP |
|
| 56 |
Entgegengehaltene Nichtpatentliteratur/Zitate,
vom Anmelder genannt |
CTNP |
|
|
Zitierende Dokumente |
|
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|
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Sequenzprotokoll |
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Prüfstoff-IPC |
ICP |
G02B 6/134
G02B 6/13
H01L 21/8252
H01L 27/088
H01L 27/144
H01L 29/06
H01L 29/10
H01L 29/36
H01L 29/74
H01L 29/778
H01L 31/0232
H01L 31/0352
H01L 31/18
H01L 33/06
H01L 33/10
H01S 5/022
H01S 5/042
H01S 5/0625
H01S 5/062
H01S 5/10
H01S 5/183
H01S 5/187
H01S 5/20
H01S 5/22
H01S 5/30
H01S 5/343
|
