| 54 |
Titel |
TI |
[EN] SPLIT-ELECTRODE VERTICAL CAVITY OPTICAL DEVICE |
| 71/73 |
Anmelder/Inhaber |
PA |
OPEL SOLAR INC, US
;
UNIV CONNECTICUT, US
|
| 72 |
Erfinder |
IN |
TAYLOR GEOFF W, US
|
| 22/96 |
Anmeldedatum |
AD |
06.03.2017 |
| 21 |
Anmeldenummer |
AN |
201715450351 |
|
Anmeldeland |
AC |
US |
|
Veröffentlichungsdatum |
PUB |
03.08.2017 |
33
31
32 |
Priorität |
PRC
PRN
PRD |
US
201414222841
24.03.2014
|
33
31
32 |
PRC
PRN
PRD |
US
201461962303
29.01.2014
|
| 51 |
IPC-Hauptklasse |
ICM |
H01L 29/15
(2006.01)
|
| 51 |
IPC-Nebenklasse |
ICS |
H01L 29/08
(2006.01)
H01L 29/36
(2006.01)
H01L 29/66
(2006.01)
H01L 29/778
(2006.01)
H01L 31/0352
(2006.01)
H01L 31/111
(2006.01)
H01L 33/06
(2010.01)
H01L 33/10
(2010.01)
H01S 5/042
(2006.01)
H01S 5/10
(2006.01)
H01S 5/183
(2006.01)
H01S 5/187
(2006.01)
H01S 5/30
(2006.01)
H01S 5/343
(2006.01)
|
|
IPC-Zusatzklasse |
ICA |
|
|
IPC-Indexklasse |
ICI |
|
|
Gemeinsame Patentklassifikation |
CPC |
G02B 6/131
G02B 6/1347
G02B 6/29338
H01S 5/0225
H01S 5/0421
H01S 5/0424
H01S 5/0425
H01S 5/04257
H01S 5/06203
H01S 5/06226
H01S 5/0625
H01S 5/1028
H01S 5/1032
H01S 5/1042
H01S 5/1071
H01S 5/1075
H01S 5/125
H01S 5/183
H01S 5/187
H01S 5/2027
H01S 5/2063
H01S 5/2086
H01S 5/222
H01S 5/3054
H01S 5/309
H01S 5/34313
H10D 18/00
H10D 18/01
H10D 30/4732
H10D 62/141
H10D 62/343
H10D 62/60
H10D 62/815
H10D 84/01
H10D 84/05
H10D 84/82
H10F 30/245
H10F 30/263
H10F 30/2877
H10F 39/103
H10F 71/1272
H10F 77/1248
H10F 77/143
H10F 77/146
H10F 77/413
H10H 20/812
H10H 20/8142
|
|
MCD-Hauptklasse |
MCM |
H01L 29/15
(2006.01)
|
|
MCD-Nebenklasse |
MCS |
H01L 29/08
(2006.01)
H01L 29/36
(2006.01)
H01L 29/66
(2006.01)
H01L 29/778
(2006.01)
H01L 31/0352
(2006.01)
H01L 31/111
(2006.01)
H01L 33/06
(2010.01)
H01L 33/10
(2010.01)
H01S 5/042
(2006.01)
H01S 5/10
(2006.01)
H01S 5/183
(2006.01)
H01S 5/187
(2006.01)
H01S 5/30
(2006.01)
H01S 5/343
(2006.01)
|
|
MCD-Zusatzklasse |
MCA |
|
| 57 |
Zusammenfassung |
AB |
[EN] A split electrode vertical cavity optical device includes an n-type ohmic contact layer, first through fifth ion implant regions, cathode and anode electrodes, first and second injector terminals, and p and n type modulation doped quantum well structures. The cathode electrode and the first and second ion implant regions are formed on the n-type ohmic contact layer. The third ion implant region is formed on the first ion implant region and contacts the p-type modulation doped QW structure. The fourth ion implant region encompasses the n-type modulation doped QW structure. The first and second injector terminals are formed on the third and fourth ion implant regions, respectively. The fifth ion implant region is formed above the n-type modulation doped QW structure and the anode electrode is formed above the fifth ion implant region. |
| 56 |
Entgegengehaltene Patentdokumente/Zitate,
in Recherche ermittelt |
CT |
US020020121647A1
|
| 56 |
Entgegengehaltene Patentdokumente/Zitate,
vom Anmelder genannt |
CT |
|
| 56 |
Entgegengehaltene Nichtpatentliteratur/Zitate,
in Recherche ermittelt |
CTNP |
|
| 56 |
Entgegengehaltene Nichtpatentliteratur/Zitate,
vom Anmelder genannt |
CTNP |
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Prüfstoff-IPC |
ICP |
G02B 6/134
G02B 6/13
H01L 21/8252
H01L 27/088
H01L 27/144
H01L 29/06
H01L 29/10
H01L 29/36
H01L 29/74
H01L 29/778
H01L 31/0232
H01L 31/0352
H01L 31/18
H01L 33/06
H01L 33/10
H01S 5/022
H01S 5/042
H01S 5/0625
H01S 5/062
H01S 5/10
H01S 5/183
H01S 5/187
H01S 5/20
H01S 5/22
H01S 5/30
H01S 5/343
|
