| 54 |
Title |
TI |
[EN] DUAL WAVELENGTH HYBRID DEVICE |
| 71/73 |
Applicant/owner |
PA |
OPEL SOLAR INC, US
;
UNIV CONNECTICUT, US
|
| 72 |
Inventor |
IN |
TAYLOR GEOFF W, US
|
| 22/96 |
Application date |
AD |
Mar 6, 2017 |
| 21 |
Application number |
AN |
201715450282 |
|
Country of application |
AC |
US |
|
Publication date |
PUB |
Jun 22, 2017 |
33
31
32 |
Priority data |
PRC
PRN
PRD |
US
201414222841
Mar 24, 2014
|
33
31
32 |
PRC
PRN
PRD |
US
201461962303
Jan 29, 2014
|
| 51 |
IPC main class |
ICM |
H01S 5/042
(2006.01)
|
| 51 |
IPC secondary class |
ICS |
H01S 5/022
(2006.01)
H01S 5/062
(2006.01)
H01S 5/10
(2006.01)
H01S 5/125
(2006.01)
H01S 5/20
(2006.01)
H01S 5/30
(2006.01)
H01S 5/343
(2006.01)
|
|
IPC additional class |
ICA |
|
|
IPC index class |
ICI |
|
|
Cooperative patent classification |
CPC |
G02B 6/131
G02B 6/1347
G02B 6/29338
H01S 5/0225
H01S 5/0421
H01S 5/0424
H01S 5/0425
H01S 5/04257
H01S 5/06203
H01S 5/06226
H01S 5/0625
H01S 5/1028
H01S 5/1032
H01S 5/1042
H01S 5/1071
H01S 5/1075
H01S 5/125
H01S 5/183
H01S 5/187
H01S 5/2027
H01S 5/2063
H01S 5/2086
H01S 5/222
H01S 5/3054
H01S 5/309
H01S 5/34313
H10D 18/00
H10D 18/01
H10D 30/4732
H10D 62/141
H10D 62/343
H10D 62/60
H10D 62/815
H10D 84/01
H10D 84/05
H10D 84/82
H10F 30/245
H10F 30/263
H10F 30/2877
H10F 39/103
H10F 71/1272
H10F 77/1248
H10F 77/143
H10F 77/146
H10F 77/413
H10H 20/812
H10H 20/8142
|
|
MCD main class |
MCM |
H01S 5/042
(2006.01)
|
|
MCD secondary class |
MCS |
H01S 5/022
(2006.01)
H01S 5/062
(2006.01)
H01S 5/10
(2006.01)
H01S 5/125
(2006.01)
H01S 5/20
(2006.01)
H01S 5/30
(2006.01)
H01S 5/343
(2006.01)
|
|
MCD additional class |
MCA |
|
| 57 |
Abstract |
AB |
[EN] A Dual-wavelength hybrid (DWH) device includes an n-type ohmic contact layer, cathode and anode terminal electrodes, first and second injector terminal electrodes, p-type and n-type modulation doped QW structures, and first through sixth ion implant regions. The first injector terminal electrode is formed on the third ion implant region that contacts the p-type modulation doped QW structure and the second injector terminal electrode is formed on the fourth ion implant region that contacts the n-type modulation doped QW structure. The DWH device operates in at least one of a vertical cavity mode and a whispering gallery mode. In the vertical cavity mode, the DWH device converts an in-plane optical mode signal to a vertical optical mode signal, whereas in the whispering gallery mode the DWH device converts a vertical optical mode signal to an in-plane optical mode signal. |
| 56 |
Cited documents identified in the search |
CT |
US000006853014B2
US020020121647A1
US020040079971A1
|
| 56 |
Cited documents indicated by the applicant |
CT |
|
| 56 |
Cited non-patent literature identified in the search |
CTNP |
|
| 56 |
Cited non-patent literature indicated by the applicant |
CTNP |
|
|
Citing documents |
|
Determine documents
|
|
Sequence listings |
|
|
|
Search file IPC |
ICP |
G02B 6/134
H01L 21/8252
H01L 27/088
H01L 27/144
H01L 29/06
H01L 29/10
H01L 29/74
H01L 29/778
H01L 31/0352
H01L 33/10
H01S 5/022
H01S 5/042
H01S 5/0625
H01S 5/062
H01S 5/10
H01S 5/183
H01S 5/187
H01S 5/20
H01S 5/22
H01S 5/30
H01S 5/343
|
