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Dokument US020160365476A1 (Seiten: 63)

Bibliografische Daten Dokument US020160365476A1 (Seiten: 63)
INID Kriterium Feld Inhalt
54 Titel TI [EN] Semiconductor Device For Optoelectronic Integrated Circuits
71/73 Anmelder/Inhaber PA OPEL SOLAR INC, US ; UNIV CONNECTICUT, US
72 Erfinder IN TAYLOR GEOFF W, US
22/96 Anmeldedatum AD 11.06.2015
21 Anmeldenummer AN 201514736624
Anmeldeland AC US
Veröffentlichungsdatum PUB 15.12.2016
33
31
32
Priorität PRC
PRN
PRD


51 IPC-Hauptklasse ICM H01L 33/00 (2010.01)
51 IPC-Nebenklasse ICS H01L 33/02 (2010.01)
H01L 33/04 (2010.01)
IPC-Zusatzklasse ICA
IPC-Indexklasse ICI
Gemeinsame Patentklassifikation CPC H01S 5/06203
H01S 5/183
H01S 5/3086
H01S 5/343
H10D 30/4732
H10D 62/116
H10D 62/149
H10D 62/357
H10D 62/85
H10D 64/62
H10H 20/013
H10H 20/0137
H10H 20/062
H10H 20/811
H10H 20/812
H10H 20/814
H10H 20/8215
H10H 20/824
MCD-Hauptklasse MCM H01L 33/00 (2010.01)
MCD-Nebenklasse MCS H01L 33/02 (2010.01)
H01L 33/04 (2010.01)
MCD-Zusatzklasse MCA
57 Zusammenfassung AB [EN] A semiconductor device includes a series of layers formed on a substrate, including a first plurality of n-type layers, a second plurality of layers that form a p-type modulation doped quantum well structure (MDQWS), a third plurality of layers disposed between the p-type MDQWS and a fourth plurality of layers that form an n-type MDQWS, and a fifth plurality of p-type layers. The first plurality of layers includes a first etch stop layer of n-type formed on an n-type contact layer. The third plurality of layers includes a second etch stop layer formed above the p-type MDQWS and a third etch stop layer formed above and offset from the second etch stop layer. The fifth plurality of layers includes a fourth etch stop layer of p-type formed above the n-type MDQWS and a fifth etch stop layer of p-type doping formed above and offset from the fourth etch stop layer.
56 Entgegengehaltene Patentdokumente/Zitate,
in Recherche ermittelt
CT
56 Entgegengehaltene Patentdokumente/Zitate,
vom Anmelder genannt
CT
56 Entgegengehaltene Nichtpatentliteratur/Zitate,
in Recherche ermittelt
CTNP
56 Entgegengehaltene Nichtpatentliteratur/Zitate,
vom Anmelder genannt
CTNP
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Sequenzprotokoll
Prüfstoff-IPC ICP H01L 29/06
H01L 29/08
H01L 29/10
H01L 29/45
H01L 33/00