54 |
Titel |
TI |
[EN] Semiconductor Device For Optoelectronic Integrated Circuits |
71/73 |
Anmelder/Inhaber |
PA |
OPEL SOLAR INC, US
;
UNIV CONNECTICUT, US
|
72 |
Erfinder |
IN |
TAYLOR GEOFF W, US
|
22/96 |
Anmeldedatum |
AD |
11.06.2015 |
21 |
Anmeldenummer |
AN |
201514736624 |
|
Anmeldeland |
AC |
US |
|
Veröffentlichungsdatum |
PUB |
15.12.2016 |
33 31 32 |
Priorität |
PRC PRN PRD |
|
51 |
IPC-Hauptklasse |
ICM |
H01L 33/00
(2010.01)
|
51 |
IPC-Nebenklasse |
ICS |
H01L 33/02
(2010.01)
H01L 33/04
(2010.01)
|
|
IPC-Zusatzklasse |
ICA |
|
|
IPC-Indexklasse |
ICI |
|
|
Gemeinsame Patentklassifikation |
CPC |
H01S 5/06203
H01S 5/183
H01S 5/3086
H01S 5/343
H10D 30/4732
H10D 62/116
H10D 62/149
H10D 62/357
H10D 62/85
H10D 64/62
H10H 20/013
H10H 20/0137
H10H 20/062
H10H 20/811
H10H 20/812
H10H 20/814
H10H 20/8215
H10H 20/824
|
|
MCD-Hauptklasse |
MCM |
H01L 33/00
(2010.01)
|
|
MCD-Nebenklasse |
MCS |
H01L 33/02
(2010.01)
H01L 33/04
(2010.01)
|
|
MCD-Zusatzklasse |
MCA |
|
57 |
Zusammenfassung |
AB |
[EN] A semiconductor device includes a series of layers formed on a substrate, including a first plurality of n-type layers, a second plurality of layers that form a p-type modulation doped quantum well structure (MDQWS), a third plurality of layers disposed between the p-type MDQWS and a fourth plurality of layers that form an n-type MDQWS, and a fifth plurality of p-type layers. The first plurality of layers includes a first etch stop layer of n-type formed on an n-type contact layer. The third plurality of layers includes a second etch stop layer formed above the p-type MDQWS and a third etch stop layer formed above and offset from the second etch stop layer. The fifth plurality of layers includes a fourth etch stop layer of p-type formed above the n-type MDQWS and a fifth etch stop layer of p-type doping formed above and offset from the fourth etch stop layer. |
56 |
Entgegengehaltene Patentdokumente/Zitate, in Recherche ermittelt |
CT |
|
56 |
Entgegengehaltene Patentdokumente/Zitate, vom Anmelder genannt |
CT |
|
56 |
Entgegengehaltene Nichtpatentliteratur/Zitate, in Recherche ermittelt |
CTNP |
|
56 |
Entgegengehaltene Nichtpatentliteratur/Zitate, vom Anmelder genannt |
CTNP |
|
|
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Sequenzprotokoll |
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Prüfstoff-IPC |
ICP |
H01L 29/06
H01L 29/08
H01L 29/10
H01L 29/45
H01L 33/00
|