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Document US020160365475A1 (Pages: 64)

Bibliographic data Document US020160365475A1 (Pages: 64)
INID Criterion Field Contents
54 Title TI [EN] Fabrication Methodology For Optoelectronic Integrated Circuits
71/73 Applicant/owner PA OPEL SOLAR INC, US ; UNIV CONNECTICUT, US
72 Inventor IN TAYLOR GEOFF W, US
22/96 Application date AD Jun 11, 2015
21 Application number AN 201514736421
Country of application AC US
Publication date PUB Dec 15, 2016
33
31
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Priority data PRC
PRN
PRD


51 IPC main class ICM H01L 33/00 (2010.01)
51 IPC secondary class ICS H01L 33/02 (2010.01)
H01L 33/04 (2010.01)
IPC additional class ICA
IPC index class ICI
Cooperative patent classification CPC H10D 30/015
H10H 20/013
H10H 20/0137
H10H 20/062
H10H 20/811
H10H 20/812
H10H 20/814
H10H 20/8215
H10H 20/824
MCD main class MCM H01L 33/00 (2010.01)
MCD secondary class MCS H01L 33/02 (2010.01)
H01L 33/04 (2010.01)
MCD additional class MCA
57 Abstract AB [EN] A method of forming an integrated circuit employs a plurality of layers formed on a substrate including i) n-type modulation doped quantum well structure (MDQWS) structure with n-type charge sheet, ii) p-type MDQWS, iii) undoped spacer layer formed on the n-type charge sheet, iv) p-type layer(s) formed on the undoped spacer layer, v) p-type etch stop layer formed on the p-type layer(s) of iv), and vi) p-type layers (including p-type ohmic contact layer(s)) formed on the p-type etch stop layer. An etch operation removes the p-type layers of vi) for a gate region of an n-channel HFET with an etchant that automatically stops at the p-type etch stop layer. Another etch operation removes the p-type etch stop layer to form a mesa at the p-type layer(s) of iv) which defines an interface to the gate region of the n-channel HFET, and a gate electrode is formed on such mesa.
56 Cited documents identified in the search CT US000006974696B2
US000006977954B2
US000007551826B2
US020120175681A1
56 Cited documents indicated by the applicant CT
56 Cited non-patent literature identified in the search CTNP
56 Cited non-patent literature indicated by the applicant CTNP
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Sequence listings
Search file IPC ICP H01L 33/00
H01L 33/06