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Dokument US020160091663A1 (Seiten: 47)

Bibliografische Daten Dokument US020160091663A1 (Seiten: 47)
INID Kriterium Feld Inhalt
54 Titel TI [EN] Optical Closed Loop Microresonator and Thyristor Memory Device
71/73 Anmelder/Inhaber PA OPEL SOLAR INC, US ; UNIV CONNECTICUT, US
72 Erfinder IN TAYLOR GEOFF W, US
22/96 Anmeldedatum AD 17.11.2015
21 Anmeldenummer AN 201514943502
Anmeldeland AC US
Veröffentlichungsdatum PUB 31.03.2016
33
31
32
Priorität PRC
PRN
PRD
US
201161525072
18.08.2011
33
31
32
PRC
PRN
PRD
US
201414238649
12.02.2014
33
31
32
PRC
PRN
PRD
US
2012051265
17.08.2012
51 IPC-Hauptklasse ICM G02B 6/293 (2006.01)
51 IPC-Nebenklasse ICS G02B 6/124 (2006.01)
G02B 6/134 (2006.01)
G02B 6/13 (2006.01)
G02B 6/35 (2006.01)
G02F 1/017 (2006.01)
IPC-Zusatzklasse ICA
IPC-Indexklasse ICI
Gemeinsame Patentklassifikation CPC B82Y 20/00
G02B 6/12007
G02B 6/124
G02B 6/125
G02B 6/131
G02B 6/1347
G02B 6/29338
G02B 6/3536
G02F 1/0151
G02F 1/0154
G02F 1/01708
H10N 70/231
Y10S 977/755
MCD-Hauptklasse MCM G02B 6/293 (2006.01)
MCD-Nebenklasse MCS G02B 6/124 (2006.01)
G02B 6/134 (2006.01)
G02B 6/13 (2006.01)
G02B 6/35 (2006.01)
G02F 1/017 (2006.01)
MCD-Zusatzklasse MCA
57 Zusammenfassung AB [EN] A semiconductor device that includes an optical resonator spaced from a waveguide structure to provide for evanescent-wave optical coupling therebetween. The optical resonator includes a closed loop waveguide defined by a vertical thyristor structure. In one embodiment, the vertical thyristor structure is formed by an epitaxial layer structure including complementary (both an n-type and a p-type) modulation doped quantum well interfaces formed between an N+ region and a P+ region.
56 Entgegengehaltene Patentdokumente/Zitate,
in Recherche ermittelt
CT US000006195187B1
US000006559949B1
US000007713803B2
US020040081467A1
56 Entgegengehaltene Patentdokumente/Zitate,
vom Anmelder genannt
CT
56 Entgegengehaltene Nichtpatentliteratur/Zitate,
in Recherche ermittelt
CTNP
56 Entgegengehaltene Nichtpatentliteratur/Zitate,
vom Anmelder genannt
CTNP
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Sequenzprotokoll
Prüfstoff-IPC ICP B82Y 20/00
G02B 6/124
G02B 6/125
G02B 6/134
G02B 6/13
G02F 1/015
G02F 1/017
H01L 45/00