| 54 |
Titel |
TI |
[EN] POWER SEMICONDUCTOR DEVICE |
| 71/73 |
Anmelder/Inhaber |
PA |
OPEL SOLAR INC, US
;
UNIV CONNECTICUT, US
|
| 72 |
Erfinder |
IN |
TAYLOR GEOFF W, US
|
| 22/96 |
Anmeldedatum |
AD |
27.05.2014 |
| 21 |
Anmeldenummer |
AN |
201414287388 |
|
Anmeldeland |
AC |
US |
|
Veröffentlichungsdatum |
PUB |
03.12.2015 |
33
31
32 |
Priorität |
PRC
PRN
PRD |
|
| 51 |
IPC-Hauptklasse |
ICM |
H01L 31/113
(2006.01)
|
| 51 |
IPC-Nebenklasse |
ICS |
G02B 6/12
(2006.01)
G02B 6/35
(2006.01)
G02B 6/42
(2006.01)
G02B 6/43
(2006.01)
H01L 27/144
(2006.01)
H01L 31/0224
(2006.01)
H01L 31/0232
(2006.01)
H01L 31/0304
(2006.01)
H01L 31/0352
(2006.01)
|
|
IPC-Zusatzklasse |
ICA |
|
|
IPC-Indexklasse |
ICI |
|
|
Gemeinsame Patentklassifikation |
CPC |
G02B 2006/12145
G02B 6/00
G02B 6/12
G02B 6/29338
G02B 6/3596
G02B 6/4295
G02B 6/43
H10D 12/212
H10D 18/00
H10D 18/211
H10D 18/40
H10D 18/65
H10D 62/142
H10D 62/148
H10D 62/812
H10F 30/282
H10F 39/103
H10F 77/1246
H10F 77/1248
H10F 77/143
H10F 77/206
H10F 77/413
|
|
MCD-Hauptklasse |
MCM |
H01L 31/113
(2006.01)
|
|
MCD-Nebenklasse |
MCS |
G02B 6/12
(2006.01)
G02B 6/35
(2006.01)
G02B 6/42
(2006.01)
G02B 6/43
(2006.01)
H01L 27/144
(2006.01)
H01L 31/0224
(2006.01)
H01L 31/0232
(2006.01)
H01L 31/0304
(2006.01)
H01L 31/0352
(2006.01)
|
|
MCD-Zusatzklasse |
MCA |
|
| 57 |
Zusammenfassung |
AB |
[EN] A semiconductor device suitable for power applications includes a thyristor epitaxial layer structure defining an anode region offset vertically from a cathode region with a plurality of intermediate regions therebetween. An anode electrode is electrically coupled to the anode region. A cathode electrode is electrically coupled to the cathode region. A switchable current path that extends vertically between the anode region and the cathode region has a conducting state and a non-conducting state. An epitaxial resistive region is electrically coupled to and extends laterally from one of the plurality of intermediate regions. An FET is provided having a channel that is electrically coupled to the epitaxial resistive region. The FET can be configured to inject (or remove) electrical carriers into (or from) the one intermediate region via the epitaxial resistive region in order to switch the switchable current path between its non-conducting state and its conducting state. |
| 56 |
Entgegengehaltene Patentdokumente/Zitate,
in Recherche ermittelt |
CT |
|
| 56 |
Entgegengehaltene Patentdokumente/Zitate,
vom Anmelder genannt |
CT |
|
| 56 |
Entgegengehaltene Nichtpatentliteratur/Zitate,
in Recherche ermittelt |
CTNP |
|
| 56 |
Entgegengehaltene Nichtpatentliteratur/Zitate,
vom Anmelder genannt |
CTNP |
|
|
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Prüfstoff-IPC |
ICP |
G02B 6/42
G02B 6/43
G02F 1/01
H01L 21/331
H01L 27/144
H01L 29/08
H01L 29/15
H01L 29/41
H01L 29/739
H01L 29/745
H01L 29/749
H01L 29/74
H01L 31/0224
H01L 31/0232
H01L 31/0304
H01L 31/0352
|
