| 54 |
Titel |
TI |
[EN] Optoelectronic Integrated Circuit |
| 71/73 |
Anmelder/Inhaber |
PA |
OPEL SOLAR INC, US
;
UNIV CONNECTICUT, US
|
| 72 |
Erfinder |
IN |
TAYLOR GEOFF W, US
|
| 22/96 |
Anmeldedatum |
AD |
24.03.2014 |
| 21 |
Anmeldenummer |
AN |
201414222841 |
|
Anmeldeland |
AC |
US |
|
Veröffentlichungsdatum |
PUB |
30.07.2015 |
33
31
32 |
Priorität |
PRC
PRN
PRD |
US
201461962303
20140129
|
| 51 |
IPC-Hauptklasse |
ICM |
H01L 33/06
(2010.01)
|
| 51 |
IPC-Nebenklasse |
ICS |
G02B 6/122
(2006.01)
G02B 6/132
(2006.01)
G02B 6/134
(2006.01)
G02B 6/136
(2006.01)
H01L 27/144
(2006.01)
H01L 27/15
(2006.01)
H01L 29/06
(2006.01)
H01L 29/778
(2006.01)
H01L 31/0352
(2006.01)
H01L 31/18
(2006.01)
H01L 33/00
(2010.01)
H01L 33/10
(2010.01)
H01S 5/0625
(2006.01)
H01S 5/183
(2006.01)
H01S 5/187
(2006.01)
H01S 5/22
(2006.01)
H01S 5/343
(2006.01)
|
|
IPC-Zusatzklasse |
ICA |
|
|
IPC-Indexklasse |
ICI |
|
|
Gemeinsame Patentklassifikation |
CPC |
G02B 6/131
G02B 6/1347
G02B 6/29338
H01S 5/0225
H01S 5/0421
H01S 5/0424
H01S 5/0425
H01S 5/04257
H01S 5/06203
H01S 5/06226
H01S 5/0625
H01S 5/1028
H01S 5/1032
H01S 5/1042
H01S 5/1071
H01S 5/1075
H01S 5/125
H01S 5/183
H01S 5/187
H01S 5/2027
H01S 5/2063
H01S 5/2086
H01S 5/222
H01S 5/3054
H01S 5/309
H01S 5/34313
H10D 18/00
H10D 18/01
H10D 30/4732
H10D 62/141
H10D 62/343
H10D 62/60
H10D 62/815
H10D 84/01
H10D 84/05
H10D 84/82
H10F 30/245
H10F 30/263
H10F 30/2877
H10F 39/103
H10F 71/1272
H10F 77/1248
H10F 77/143
H10F 77/146
H10F 77/413
H10H 20/812
H10H 20/8142
|
|
MCD-Hauptklasse |
MCM |
H01L 33/06
(2010.01)
|
|
MCD-Nebenklasse |
MCS |
G02B 6/122
(2006.01)
G02B 6/132
(2006.01)
G02B 6/134
(2006.01)
G02B 6/136
(2006.01)
H01L 27/144
(2006.01)
H01L 27/15
(2006.01)
H01L 29/06
(2006.01)
H01L 29/778
(2006.01)
H01L 31/0352
(2006.01)
H01L 31/18
(2006.01)
H01L 33/00
(2010.01)
H01L 33/10
(2010.01)
H01S 5/0625
(2006.01)
H01S 5/183
(2006.01)
H01S 5/187
(2006.01)
H01S 5/22
(2006.01)
H01S 5/343
(2006.01)
|
|
MCD-Zusatzklasse |
MCA |
|
| 57 |
Zusammenfassung |
AB |
[EN] A semiconductor device employs an epitaxial layer arrangement including a first ohmic contact layer and first modulation doped quantum well structure disposed above the first ohmic contact layer. The first ohmic contact layer has a first doping type, and the first modulation doped quantum well structure has a modulation doped layer of a second doping type. At least one isolation ion implant region is provided that extends through the first ohmic contact layer. The at least one isolation ion implant region can include oxygen ions. The at least one isolation ion implant region can define a region that is substantially free of charge carriers in order to reduce a characteristic capacitance of the device. A variety of high performance transistor devices (e.g., HFET and BICFETs) and optoelectronic devices can employ this device structure. Other aspects of wavelength-tunable microresonantors and related semiconductor fabrication methodologies are also described and claimed. |
| 56 |
Entgegengehaltene Patentdokumente/Zitate,
in Recherche ermittelt |
CT |
US000006031243A
US020020121647A1
US020090028492A1
US020100236625A1
US020120164797A1
US020140241660A1
US020100116976A1
|
| 56 |
Entgegengehaltene Patentdokumente/Zitate,
vom Anmelder genannt |
CT |
|
| 56 |
Entgegengehaltene Nichtpatentliteratur/Zitate,
in Recherche ermittelt |
CTNP |
|
| 56 |
Entgegengehaltene Nichtpatentliteratur/Zitate,
vom Anmelder genannt |
CTNP |
|
|
Zitierende Dokumente |
|
Dokumente ermitteln
|
|
Sequenzprotokoll |
|
|
|
Prüfstoff-IPC |
ICP |
G02B 6/122
G02B 6/132
G02B 6/134
G02B 6/136
H01L 21/332
H01L 27/144
H01L 27/15
H01L 29/06
H01L 29/737
H01L 29/74
H01L 29/778
H01L 31/0352
H01L 31/18
H01L 33/00
H01L 33/06
H01L 33/10
H01S 5/042
H01S 5/0625
H01S 5/062
H01S 5/10
H01S 5/183
H01S 5/187
H01S 5/20
H01S 5/22
H01S 5/30
H01S 5/343
|
