| 54 |
Title |
TI |
[EN] Single Electron Transistor Device |
| 71/73 |
Applicant/owner |
PA |
OPEL SOLAR INC, US
;
UNIV CONNECTICUT, US
|
| 72 |
Inventor |
IN |
TAYLOR GEOFF W, US
|
| 22/96 |
Application date |
AD |
Nov 24, 2014 |
| 21 |
Application number |
AN |
201414551619 |
|
Country of application |
AC |
US |
|
Publication date |
PUB |
Jun 18, 2015 |
33
31
32 |
Priority data |
PRC
PRN
PRD |
US
201313921311
Jun 19, 2013
|
33
31
32 |
PRC
PRN
PRD |
US
2012051265
Aug 17, 2012
|
| 51 |
IPC main class |
ICM |
H01L 29/66
(2006.01)
|
| 51 |
IPC secondary class |
ICS |
H01L 29/06
(2006.01)
H01L 29/12
(2006.01)
H01L 29/778
(2006.01)
|
|
IPC additional class |
ICA |
|
|
IPC index class |
ICI |
|
|
Cooperative patent classification |
CPC |
B82Y 10/00
G02B 6/125
H01L 21/0259
H01S 5/026
H01S 5/06203
H01S 5/18358
H01S 5/309
H01S 5/34
H01S 5/3412
H10D 30/475
H10D 48/383
H10D 62/118
H10D 62/125
H10D 62/812
H10D 62/814
H10D 62/8164
H10F 39/10
H10F 71/00
H10F 77/1433
H10F 77/146
H10H 20/01
H10H 20/812
H10H 29/10
|
|
MCD main class |
MCM |
H01L 29/66
(2006.01)
|
|
MCD secondary class |
MCS |
H01L 29/06
(2006.01)
H01L 29/12
(2006.01)
H01L 29/778
(2006.01)
|
|
MCD additional class |
MCA |
|
| 57 |
Abstract |
AB |
[EN] A transistor device is provided that includes a gate electrode disposed between source and drain electrodes and overlying a quantum dot structure realized by a modulation doped quantum well structure. A potential barrier surrounds the quantum dot structure. The transistor device can be configured for operation as a single electron transistor by means for biasing the gate and source electrodes to allow for tunneling of a single electron from the source electrode through the potential barrier surrounding the quantum dot structure and into the quantum dot structure, and means for biasing the gate and drain electrodes to allow for selective tunneling of a single electron from the quantum dot structure through the potential barrier surrounding the quantum dot structure to the drain electrode, wherein the selective tunneling of the single electron is based upon spin state of the single electron. |
| 56 |
Cited documents identified in the search |
CT |
US020040081216A1
|
| 56 |
Cited documents indicated by the applicant |
CT |
|
| 56 |
Cited non-patent literature identified in the search |
CTNP |
|
| 56 |
Cited non-patent literature indicated by the applicant |
CTNP |
|
|
Citing documents |
|
Determine documents
|
|
Sequence listings |
|
|
|
Search file IPC |
ICP |
B82Y 10/00
G02B 6/125
H01L 21/02
H01L 27/144
H01L 27/15
H01L 29/06
H01L 29/12
H01L 29/15
H01L 29/778
H01L 31/0352
H01L 31/18
H01L 33/00
H01L 33/06
H01S 5/00
H01S 5/026
H01S 5/062
H01S 5/183
H01S 5/30
H01S 5/34
|
