| 54 |
Titel |
TI |
[EN] Optoelectronic Integrated Circuit |
| 71/73 |
Anmelder/Inhaber |
PA |
OPEL SOLAR INC, US
;
UNIV CONNECTICUT, US
|
| 72 |
Erfinder |
IN |
TAYLOR GEOFF W, US
|
| 22/96 |
Anmeldedatum |
AD |
20.11.2014 |
| 21 |
Anmeldenummer |
AN |
201414549369 |
|
Anmeldeland |
AC |
US |
|
Veröffentlichungsdatum |
PUB |
28.05.2015 |
33
31
32 |
Priorität |
PRC
PRN
PRD |
US
201313921311
19.06.2013
|
33
31
32 |
PRC
PRN
PRD |
US
2012051265
17.08.2012
|
| 51 |
IPC-Hauptklasse |
ICM |
H01L 33/06
(2010.01)
|
| 51 |
IPC-Nebenklasse |
ICS |
H01L 27/144
(2006.01)
H01L 27/15
(2006.01)
H01L 31/0352
(2006.01)
H01L 31/18
(2006.01)
H01L 33/00
(2010.01)
|
|
IPC-Zusatzklasse |
ICA |
|
|
IPC-Indexklasse |
ICI |
|
|
Gemeinsame Patentklassifikation |
CPC |
B82Y 10/00
G02B 6/125
H01L 21/0259
H01S 5/026
H01S 5/06203
H01S 5/18358
H01S 5/309
H01S 5/34
H01S 5/3412
H10D 30/475
H10D 48/383
H10D 62/118
H10D 62/125
H10D 62/812
H10D 62/814
H10D 62/8164
H10F 39/10
H10F 71/00
H10F 77/1433
H10F 77/146
H10H 20/01
H10H 20/812
H10H 29/10
|
|
MCD-Hauptklasse |
MCM |
H01L 33/06
(2010.01)
|
|
MCD-Nebenklasse |
MCS |
H01L 27/144
(2006.01)
H01L 27/15
(2006.01)
H01L 31/0352
(2006.01)
H01L 31/18
(2006.01)
H01L 33/00
(2010.01)
|
|
MCD-Zusatzklasse |
MCA |
|
| 57 |
Zusammenfassung |
AB |
[EN] A semiconductor device includes a substrate supporting a plurality of layers that include at least one modulation doped quantum well (QW) structure offset from a quantum dot in quantum well (QD-in-QW) structure. The modulation doped QW structure includes a charge sheet spaced from at least one QW by a spacer layer. The QD-in-QW structure has QDs embedded in one or more QWs. The QD-in-QW structure can include at least one template/emission substructure pair separated by a barrier layer, the template substructure having smaller size QDs than the emission substructure. A plurality of QD-in-QW structures can be provided to support the processing (emission, absorption, amplification) of electromagnetic radiation of different characteristic wavelengths (such as optical wavelengths in range from 1300 nm to 1550 nm). The device can realize an integrated circuit including a wide variety of devices that process electromagnetic radiation at a characteristic wavelength(s) supported by the QDs of the QD-in-QW structure(s). Other semiconductor devices are also described and claimed. |
| 56 |
Entgegengehaltene Patentdokumente/Zitate,
in Recherche ermittelt |
CT |
US000008331142B2
US020080135831A1
US020090173934A1
US020100224857A1
|
| 56 |
Entgegengehaltene Patentdokumente/Zitate,
vom Anmelder genannt |
CT |
|
| 56 |
Entgegengehaltene Nichtpatentliteratur/Zitate,
in Recherche ermittelt |
CTNP |
|
| 56 |
Entgegengehaltene Nichtpatentliteratur/Zitate,
vom Anmelder genannt |
CTNP |
|
|
Zitierende Dokumente |
|
Dokumente ermitteln
|
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Sequenzprotokoll |
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Prüfstoff-IPC |
ICP |
B82Y 10/00
G02B 6/125
H01L 21/02
H01L 27/144
H01L 27/15
H01L 29/06
H01L 29/12
H01L 29/15
H01L 31/0352
H01L 31/18
H01L 33/00
H01L 33/06
H01S 5/00
H01S 5/026
H01S 5/062
H01S 5/183
H01S 5/30
H01S 5/34
|
