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Dokument US020150138881A1 (Seiten: 19)

Bibliografische Daten Dokument US020150138881A1 (Seiten: 19)
INID Kriterium Feld Inhalt
54 Titel TI [EN] Thyristor Memory Cell Integrated Circuit
71/73 Anmelder/Inhaber PA OPEL SOLAR INC, US ; UNIV CONNECTICUT, US
72 Erfinder IN TAYLOR GEOFF W, US
22/96 Anmeldedatum AD 29.01.2015
21 Anmeldenummer AN 201514609064
Anmeldeland AC US
Veröffentlichungsdatum PUB 21.05.2015
33
31
32
Priorität PRC
PRN
PRD
US
201313951578
26.07.2013
33
31
32
PRC
PRN
PRD
US
2012051265
17.08.2012
51 IPC-Hauptklasse ICM G11C 13/00 (2006.01)
51 IPC-Nebenklasse ICS
IPC-Zusatzklasse ICA
IPC-Indexklasse ICI
Gemeinsame Patentklassifikation CPC G11C 11/39
G11C 13/0004
G11C 13/0097
G11C 14/0045
G11C 14/009
H10B 63/32
H10B 63/80
H10N 70/231
H10N 70/826
MCD-Hauptklasse MCM G11C 13/00 (2006.01)
MCD-Nebenklasse MCS
MCD-Zusatzklasse MCA
57 Zusammenfassung AB [EN] A semiconductor memory device including an array of memory cells (MC) formed on a substrate each realized from a load element and thyristor that define a switchable current path whose state represents a volatile bit value stored by the MC. At least one word line corresponding to a respective row of the array is formed on the substrate and coupled to MC current paths for the corresponding row. Bit lines corresponding to respective columns of the array are formed on the substrate and can be coupled to a modulation doped QW interface of the MC thyristors for the corresponding column. Circuitry is configured to apply an electrical signal to the word line(s) in order to generate current that programs phase change material of the MC load elements into one of a high or low resistive state according to state of the current path of the MCs for non-volatile backup purposes.
56 Entgegengehaltene Patentdokumente/Zitate,
in Recherche ermittelt
CT US000008947925B2
56 Entgegengehaltene Patentdokumente/Zitate,
vom Anmelder genannt
CT
56 Entgegengehaltene Nichtpatentliteratur/Zitate,
in Recherche ermittelt
CTNP
56 Entgegengehaltene Nichtpatentliteratur/Zitate,
vom Anmelder genannt
CTNP
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Sequenzprotokoll
Prüfstoff-IPC ICP G11C 11/39
G11C 14/00
H01L 27/24
H01L 45/00